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Converting CO2 into chemicals with electricity generated by renewable energy is a promising way to achieve the goal of carbon neutrality. Carbon-based materials have the advantages of low cost, wide sources and environmental friendliness. In this work, we prepared a series of boron-doped covalent triazine frameworks and found that boron doping can significantly improve the CO selectivity up to 91.2% in the CO2 electroreduction reactions(CO2RR). The effect of different doping ratios on the activity by adjusting the proportion of doped atoms was systematically investigated. This work proves that the doping modification of non-metallic materials is a very effective way to improve their activity, and also lays a foundation for the study of other element doping in the coming future.

Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.

The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.

The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg2Sn and Mg2Si are promising TE materials beca...

The nickel-rich cathode LiNi0.6Co0.1Mn0.3O2 (NCM613) is a promising cathode material but has poor cycle stability, especially at a high cutoff voltage. Aiming at modulating the unit cell parameters...

Ultra-precision machining is a key technology for manufacturing optical surfaces in a broad range of automotive and aerospace applications. At the state of the art, no precise methods for analysing the temperatures in the cutting zone of a monocrystalline diamond tool are available. Precise cutting temperatures are required for a detailed analysis of the wear behaviour. High response times and low measurement accuracies are still challenges. In this work, a new approach for a precise temperature measurement using boron-doped diamonds is shown. The sensor properties of boron-doped diamonds were analysed and experimental investigations to show the suitability were carried out. First results show a great potential as measurement method for real time temperatures during the cutting process.

High concentration of Boron and Phosphorus elements are required in diffusion process during the fabrication of semiconductor devices such as diode and transistor based on Silicon On Insulator (SOI) wafer. Achieving high level of these elements’ concentration is the entry point for further research in the field of electronics. For this reason, the concentration of the both elements was tested by flowing Boron and Phosphorus gas with flow rate of 1.5 litre per minute into the Nitrogen furnace for 5 minutes towards the surface of the SOI wafer samples at temperatures of 880, 900 and 950 degrees Celsius. This test was carried out at Michiharu Tabe Laboratory, Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan. Furthermore, the resistivity measurements of samples with Boron and Phosphorus doping were carried out. The results of resistivity were then converted to obtain the concentrations of Boron and Phosphorus on the surface of SOI wafer sample. From the concentration and temperature data, it is obtained the modelling of concentration to temperature function for Boron and Phosphorus. The modelling results show that there is a linear correlation between high concentrations of Boron and Phosphorus to temperature.

In this article, the impact of postplating annealing on the regenerated state of boron-doped p-type passivated emitter and rear cell (PERC) solar cells with plated Ni/Cu/Ag front-side contacts is characterized. The assessment of different plating annealing profiles in the temperature range of 200-300 °C and their impact on light-induced degradation as well as on additional defects are realized by lifetime measurements of nonmetallized solar cell precursors before and after annealing. An observed lifetime degradation indicates that the current process sequence might facilitate bulk defect activation. An alternative process sequence is tested and promising results are presented.

We report a detailed experimental and theoretical study on thermoelectric properties of boron-doped single-walled carbon nanotubes (B-SWCNTs), which are versatile building blocks of flexible thermoelectric devices. Implantations of substitutional boron dopants (0.1-0.5 atom %) in SWCNTs are realized using thermal diffusion. The after-synthesis boron doping simultaneously improves the Seebeck coefficient (S) and electrical conductivity (s) of SWCNT networks, leading to an S2s value of 226 mW/mK2. First-principle calculations indicate that a few tenths atom % of substitutional boron atoms improve the S value of semi-conducting SWCNTs but reduce the electron conductance in individual SWCNTs. The high s of B-SWCNT networks is attributed to the improved electrical transport between laterally contacted metallic and semi-conducting nanotubes. The produced B-SWCNTs are stable over high-temperature annealing or processing in liquid media, which inspired us to fabricate thermoelectric modules by a low-cost printing method. The modules demonstrate an increased thermoelectric efficiency by 76% compared to those with undoped SWCNTs. This work provides a feasible fabrication strategy and physical insights for B-SWCNT-based flexible thermoelectrics.

Ammonia is one of the most important industrial chemicals due to its wide application in various fields. However, its synthesis requires heavy energy consumption and harsh reaction conditions. Here...

Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to appearance of an efficient recombination center with the thermal activation energy 0.27  0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiCB up to 500 °С and above it. In addition, the lux-ampere characteristics becomes linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiCB samples, pronounced variations of line positions in photoluminescence spectra in near-infrared range are revealed.

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlOx- and AlOx/SiNx:H stack-passivated pyramid textured p+-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured p+-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of AlOx layers on pyramid textured p+-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance (RSW) from ∼2.5 to ∼3.7% for the AlOx/SiNx:H stack-passivated pyramid textured p+-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ∼60 and ∼100 Ω/sq p+-emitters is reduced by 0.8 and 0.6 mA/cm2, respectively under front p+-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ∼60 and ∼100 Ω/sq p+-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ∼100 Ω/sq p+-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

Herein, a conductive boron-doped nanodiamond (BDND) particle is prepared as an electrode material for an aqueous electric double-layer capacitor with high power and energy densities. The BDND is obtained by depositing a boron-doped diamond (BDD) on a nanodiamond particle substrate with a primary particle size of 4.7 nm via microwave plasma-assisted chemical vapor deposition, followed by heat treatment in air. The BDND comprises BDD and sp

Realizing transparent and energy-dense supercapacitor is highly challenging, as there is a trade-off between energy storing capability and transparency in the active material film. We report here that interstitial boron-doped mesoporous semiconductor oxide shows exceptional electrochemical capacitance which rivals other pseudocapacitive materials, while maintaining its transparent characteristic. This improvement is credited to the robust redox reactions at interstitial boron-associated defects that transform inert semiconductor oxides into an electrochemically active material without affecting its transparency. By precisely tuning the level of doping, the pseudocapacitive reactivity of these materials is optimized, resulting in a volumetric capacitance up to 1172 F cm

Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only a few studies have directly investigated the precursor of the defect responsible for this degradation. In this study, using the photoconductance decay measurement method, we identify the precursor of the defect responsible for light-induced degradation. By comparing the photoconductance decay of samples in the different states, we observe the presence of a minority carrier trap in the annealed state, which is not present after degradation. Trap annihilation shows a clear anticorrelation with the generation of the recombination-active boron-oxygen defect, as determined from minority carrier lifetime measurements. Furthermore, it is concluded that a model based on a single-level trap cannot explain the doping-dependent measurements, meaning that the detected trap has two or more energy levels.

International audience; We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.

We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0 . 214 m 0 . The obtained value of the transversal mass is higher than that reported for bulk Si. Parameters defining the energy surfaces near the valence band edge for heavy and light holes were found to be equal: A = –4.002, B = 1.0, C = 4.025, and corresponding to the experimental effective masses obtained in three orientations of the magnetic field: m lh= 0 . 172 , m lh= 0 . 157 , m lh = 0 . 163 , and m hh= 0 . 46 , m ∗ [ 111 ] = 0 . 56 , m ∗ [ 110 ] = 0 . 53 . The obtained energy band parameters and effective masses for holes have coincided with those found in bulk Si. The average values of the relaxation time of the charge carriers are found to be: τ e,1 = 2.28⋅10 –10 s; τ e,2 = 3.57⋅10 –10 s; τ lh = 6.9⋅10 –10 s; τ hh = 7.2⋅10 –10 s, which are by one order of value larger than those obtained in bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p + -n junction as well as by reduction of the scattering process due to the presence of boron dipole centers. Keywords: cyclotron resonance, effective mass, relaxation time, silicon nanostructure.

In this study, the effect of modifying boron doping concentration on the optical properties, electrical properties and microstructural images of TiO2 thin films was investigated by the sol-gel technique by grinding TiO2 powder with a boron compound at a wavelength range of 250 nm to 850 nm. The SEM micro-images revealed the homogenous, continuous and nanocrystalline surface morphology: 10% is the tolerable amount of boron doping concentration into the TiO2 for achieving sphere-like nanostructures materials with low agglomeration. The XRD spectra of the B-TiO2 films showed anatase peaks of greater intensities when compared to the pure TiO2 film. All the films illustrate extinction coefficient in the visible region of solar spectra corresponding to the low absorption, and absorption peaks established in the ultraviolet region near 330nm with the optical transmittance varied from over 52 - 96% in the UV-Vis wavelength range. Diffuse reflectance absorption spectra analysis indicated that the incorporation of B into TiO2 material results in a substantial red shift and the absorption extends significantly into the visible range. The optical band gap energy values of the thin films were found to be 3.38, 3.35, 3.28, 3.26, and 3.36eV. This showed a low probability of raising the electron across the mobility gap with the photon energy in the visible region. The refractive index values varied between 1.891 and 1.922 depending on the percentage content of boron. Moreover, the imaginary part of the dielectric constant increase slowly, whereas the real part increases sharply and the optical conductivity was found to increase with the increase in boron addition.

International audience; Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next-generation solar cells based on crystalline silicon (c-Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high-emitter quality. In this work, we propose the use of plasma-immersion ion implantation (PIII) from B$_2$ H$_6$ gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J$_{0e}$) below 21 fA/cm$^2$ were obtained using the PIII technique regardless of the tested implanta-tion doses for sheet resistances between 110 and 160 $\Omega$/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen-printing/firing. The PIII boron emitters' performances were further tested with their integration in n-type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost. KEYWORDS annealing temperature, B$_2$ H$_6$ plasma, boron doping, n-type PERT solar cells, plasma-immersion ion implantation, silicon solar cells We report a new way to activate implanted boron emitter at low temperature that is the use of plasma-immersion ion implantation (PIII) from B$_2$H$_6$ plasma. A full activation of the emitter at 950°C was observed even for a high implantation dose corresponding to a sheet resistance of 112 $\Omega$/sq. Promising performances while being integrated in n-PERT solar cells fully doped by PIII were demonstrated with efficiency of 20.8% % using a lower annealing temperature than with BLII and a reduced production cost.

In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000°C have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects.

A new class of benchtop-stable boron-doped pentacenes, i.e., 5,14-dimesityl-5,14-dihydro-5,14-diborapentacene (3H) and its 2,3-dihalogenated derivatives, 3F and 3Cl, have been successfully applied as emitters in fluorescent organic light-emitting diodes (OLEDs). The best performance was achieved with 2% of the blue emitter 3H doped in 9,10-di-(2-naphthyl)anthracene (ADN) as the emitting layer (turn-on voltage Von = 3.3 V, λem = 476 nm, maximum external quantum efficiency ηext = 3.4% with a negligible roll-off up to 10 000 cd m−2, maximum luminance Lmax = 39 180 cd m−2). Contrary to the blue-emitting 3H-based device, 3F- and 3Cl-containing OLEDs produced turquoise (484 nm) and green (492 nm) light, respectively.

In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper we study the effect of this treatment on 6H-SiC MOSFETs and we compare it to their 4H-SiC counterparts. The gate oxide boron treatment highly increases mobility values in 4H-SiC whereas the increase is lower in 6H-SiC. The mobility increase by the boron treatment in 4H-SiC MOSFETs is related to the decrease of near interface oxide traps (NIOTs). Then, a different NIOTs density and energy location can be seen as a possible explanation for the different mobility improvement behavior seen in both polytypes.

In this paper, boron-doped dense 6H-SiC ceramics was fabricated by the high-temperature physical vapor transport (HTPVT) method. The effect of B doping on the crystal structure stability of 6H-SiC was investigated based on density functional theory (DFT). The results show that B doping can be realized even under thermodynamical equilibrium conditions. Nevertheless, it is found that the B doping effects on the (0001) of Si-plane and (000-1) of C-plane are significantly different. The doping experiments demonstrated that B can observably change the crystal growth morphology, leading to the formation of elongated 6H-SiC crystals.

Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p+ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (∼ 1.1 × 1021 cm−3) is detected on the HPDG with respect to the SCD region (∼ 5.4 × 1020 cm−3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current–voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.

International audience

It is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA performance of CNTs was improved under the synergistic action of B and N atoms. The B,N-doped carbon nanotubes (B,N-CNTs) exhibited excellent MA performance, where the value of minimum reflection loss was −40.04 dB, and the efficient absorption bandwidth reached 4.9 GHz (10.5–15.4 GHz). Appropriate conductance loss and multi-polarization loss provide the main contribution to the MA of B,N-CNTs. This study provides a novel method for the design of CNTs related MA materials.

The carrier lifetime control in p-type 4H-SiC epilayers with intentional aluminum (Al) and boron (B) doping is demonstrated as part of work to develop a p-type “recombination-enhancing layer” for n-channel insulated gate bipolar devices fabricated on p-type substrates. The (Al + B)-doped epilayers (Al: 5 × 1017, B: 4 × 1016 cm−3) showed a very short minority carrier lifetime of less than 20 ns at 293 K, resembling that of highly Al-doped epilayers (Al: 1 × 1019 cm−3). Besides, the minority carrier lifetimes in (Al + B)-doped epilayers are stable against post-annealing in Ar and H2 ambient, while that of Al-doped epilayers varied considerably. PiN diodes with a 10 μm-thick (Al + B)-doped buffer layer inserted on p-type substrates showed no evident degradation after a stress test under a pulse current density of 2000 A/cm2.

In-situ Boron doped embedded SiGe epitaxy has been widely used for CMOS source/drain in advanced technology nodes, from its introduction in planar devices to its more recent application in FinFETs. Compared to planar technology, FinFETs have the benefit of improved short channel effect, which allows for significantly higher in-situ doping level for lower contact resistance. This work explores the source/drain expitaxy design differences between planar and FinFET transistors, and how the in-situ doped epitaxy process can be optimized to address the call for a higher doping level in the FinFET source/drain. In particular, we observe a competing relationship between Germanium and Boron incorporation -- increasing Ge incorporation generally lowers boron doping, and increased boron incorporation generally lowers Ge. However, our work shows that the limit of Boron doping can be boosted by increasing Ge percentage, and furthermore we propose a Si-Ge-B phase diagram based on this experimental data. Outside of the soluble area of the phase diagram defective epitaxy is observed, featuring Boron-rich incoherent phase or Boron segregation. Finally, we present device data that show the performance benefit when Ge% and Boron is optimized according to the phase diagram, characterized by lower Ron and higher drive current.

This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons ( n =1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content.

We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

The rectification behavior of two and three separated armchair graphene nanoribbons (AGNRs) which one of them plays the role of channel and others play the role of side gates is investigated. The tight-binding density functional approach (DFTB) and non-equilibrium Green function method (NEGF) are employed for calculations. The nitrogen (N) and boron (B) atoms are used to dope the side gates. The results show that these devices have low threshold voltage and their rectification ratios are higher than one doped AGNR device, with the maximum value of 3.18 × 108. Also, without doping the channel, it can become to n-type or p-type semiconductor, only by doping the side gates. The current-voltage characteristics of these devices are similar and have little dependence on side gates width.

The impact of elemental boron (B) doping on the structural, optical, and magnetotransport properties of epitaxial Ge/AlAs/GaAs(001) heterostructures, grown by solid-source molecular beam epitaxy, w...

Confronted with challenges in obtaining lower power consumption and higher gas response for triethylamine (TEA) gas detection, it becomes very important to rational induce heterointerface to enhance gas-sensing properties. In this work, we demonstrate that the boron-doped reduced graphene oxide (B-RGO) coated Au@SnO2 heterostructure is using as the sensor material for TEA gas detection with a response of 69.1% for 1 ppm of TEA gas at low working temperature (100 °C). With the wrapping of B-RGO, the response value of the Au@SnO2-based sensor for TEA detection is boosted by 5.6 times and a detection limit of ppb (parts per billion) level is achieved. The sensors are selectively sensitive to TEA gas, which is about 10 times higher than the response to the other four gases. The outstanding sensing performance is mainly attributed to the synergistic effect of the B-RGO/SnO2 and Au/SnO2 heterostructure. The present work shows that heterostructure engineering together with boron-doped graphene has excellent potential for promoting highly selective and low concentration noxious gas sensing detection.

Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although heterogeneous integration of III–V semiconductors on Si has been well-developed, the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices. The monolithic growth of III–V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers. On the other hand, the growth of lattice-matched B-doped group-III–V materials is an attractive area of research. However, due to the difficulty in growth, the development is still relatively slow. Herein, we present a comprehensive review of the recent achievements in this field. We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III–V materials. The unique surface morphology, crystallinity, and optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective optoelectronic applications. Finally, we detail the obstacles and challenges to exploit the potential for such practical applications fully.