199 results on '"Boron doping"'
Search Results
2. Boron-doped Covalent Triazine Framework for Efficient CO2 Electroreduction
- Author
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Yuan-Biao Huang, Qiuxia Li, Jundong Yi, Rong Cao, and Shaoyi Chi
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Materials science ,business.industry ,Doping ,chemistry.chemical_element ,General Chemistry ,Renewable energy ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,Covalent bond ,Boron doping ,business ,Selectivity ,Carbon ,Triazine - Abstract
Converting CO2 into chemicals with electricity generated by renewable energy is a promising way to achieve the goal of carbon neutrality. Carbon-based materials have the advantages of low cost, wide sources and environmental friendliness. In this work, we prepared a series of boron-doped covalent triazine frameworks and found that boron doping can significantly improve the CO selectivity up to 91.2% in the CO2 electroreduction reactions(CO2RR). The effect of different doping ratios on the activity by adjusting the proportion of doped atoms was systematically investigated. This work proves that the doping modification of non-metallic materials is a very effective way to improve their activity, and also lays a foundation for the study of other element doping in the coming future.
- Published
- 2021
3. Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals
- Author
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S.O. Ivakhnenko, P. M. Lytvyn, I. M. Danylenko, S.V. Malyuta, T.V. Kovalenko, Andrii Nikolenko, and V. V. Strelchuk
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Materials science ,business.industry ,Boron doping ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Atomic and Molecular Physics, and Optics ,Diamond crystal ,Electronic, Optical and Magnetic Materials - Abstract
Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.
- Published
- 2021
4. Boron-Doped α-Oligo- and Polyfurans: Highly Luminescent Hybrid Materials, Color-Tunable through the Doping Density
- Author
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Holger Helten, Andreas Helbig, Maik Finze, Maximilian Fest, Ivo Krummenacher, Lars Fritze, Holger Braunschweig, and Tobias Bischof
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Inorganic Chemistry ,Materials science ,Polymers and Plastics ,business.industry ,Organic Chemistry ,Boron doping ,Doping ,Materials Chemistry ,Optoelectronics ,business ,Hybrid material ,Luminescence - Published
- 2021
5. Sensitive Elements of High Temperature Pressure Sensors Formed from a Doped Polycrystalline Diamond
- Author
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Razhudin Rizakhanov, Vadim Shokorov, Elena Vysotina, N. I. Polushin, Aleksandr Mishanin, and Sergey Sigalaev
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010302 applied physics ,Materials science ,business.industry ,Mechanical Engineering ,Doping ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Polycrystalline diamond ,Pressure sensor ,Mechanics of Materials ,0103 physical sciences ,Boron doping ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business - Abstract
The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.
- Published
- 2021
6. Erase Speed Enhancement with Low Power Operation by Incorporating Boron Doping
- Author
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Byung-Gook Park, Young Suh Song, Jong-Ho Lee, Hyun-Min Kim, and Taejin Jang
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Materials science ,business.industry ,Boron doping ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Electronic, Optical and Magnetic Materials ,Power (physics) - Published
- 2021
7. Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals
- Author
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Wataru Saito, Yuzuru Miyazaki, Zhicheng Huang, Kazuya Sugimoto, Kouichi Hayashi, Kei Hayashi, Yasuhiro Inamura, Naohisa Happo, Kenji Ohoyama, Takamichi Miyazaki, Masahide Harada, and Kenichi Oikawa
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Materials science ,business.industry ,Fossil fuel ,Energy Engineering and Power Technology ,Crystallographic defect ,Engineering physics ,Thermal conductivity ,Waste heat ,Thermoelectric effect ,Boron doping ,Materials Chemistry ,Electrochemistry ,Chemical Engineering (miscellaneous) ,Electricity ,Electrical and Electronic Engineering ,business - Abstract
The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg2Sn and Mg2Si are promising TE materials beca...
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- 2021
8. Boron Doping and LiBO2 Coating Synergistically Enhance the High-Rate Performance of LiNi0.6Co0.1Mn0.3O2 Cathode Materials
- Author
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Cuili Guo, Wei Li, Chaoyi Zhou, Jing Liu, Baozhao Shi, Lijuan Wang, Jinli Zhang, and Shan Gao
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High rate ,Materials science ,Renewable Energy, Sustainability and the Environment ,business.industry ,General Chemical Engineering ,General Chemistry ,engineering.material ,Cathode ,law.invention ,Coating ,Structural stability ,law ,Cathode material ,Boron doping ,engineering ,Environmental Chemistry ,Optoelectronics ,business ,Voltage - Abstract
The nickel-rich cathode LiNi0.6Co0.1Mn0.3O2 (NCM613) is a promising cathode material but has poor cycle stability, especially at a high cutoff voltage. Aiming at modulating the unit cell parameters...
- Published
- 2021
9. The Effects of Boron-Doping on the Electronic Properties of Blue Phosphorene
- Author
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Zhiyong Wang, Kexin Ma, Xueqiong Dai, and Yejin Wu
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Phosphorene ,chemistry.chemical_compound ,Materials science ,chemistry ,business.industry ,Boron doping ,Optoelectronics ,business ,Electronic properties - Published
- 2021
10. Boron-doped monocrystalline diamond as cutting tool for temperature measurement in the cutting zone
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J. Polte, T. Hocke, M. Polte, and Eckart Uhlmann
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Materials science ,Cutting tool ,business.industry ,Mechanical engineering ,Diamond ,engineering.material ,Temperature measurement ,Monocrystalline silicon ,Machining ,Boron doping ,engineering ,General Earth and Planetary Sciences ,Aerospace ,business ,General Environmental Science ,Diamond tool - Abstract
Ultra-precision machining is a key technology for manufacturing optical surfaces in a broad range of automotive and aerospace applications. At the state of the art, no precise methods for analysing the temperatures in the cutting zone of a monocrystalline diamond tool are available. Precise cutting temperatures are required for a detailed analysis of the wear behaviour. High response times and low measurement accuracies are still challenges. In this work, a new approach for a precise temperature measurement using boron-doped diamonds is shown. The sensor properties of boron-doped diamonds were analysed and experimental investigations to show the suitability were carried out. First results show a great potential as measurement method for real time temperatures during the cutting process.
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- 2021
11. Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface
- Author
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Yoonmook Kang, Hae-Seok Lee, Hee Eun Song, Eunwan Cho, Sungeun Park, Donghwan Kim, Ajeet Rohatgi, Kwan Hong Min, Young-Woo Ok, Jeong Mo Hwang, and Min Gu Kang
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Surface (mathematics) ,Materials science ,Silicon ,Passivation ,Renewable Energy, Sustainability and the Environment ,business.industry ,chemistry.chemical_element ,Field effect ,Charge density ,Plasma ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,chemistry ,Stack (abstract data type) ,Boron doping ,Optoelectronics ,Electrical and Electronic Engineering ,business - Published
- 2020
12. Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy
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Alexander V. Pavlikov, Andrei A. Eliseev, Denis E. Presnov, E. A. Lipkova, V. Yu. Timoshenko, Kyrill A. Gonchar, and A. I. Efimova
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symbols.namesake ,Materials science ,business.industry ,Annealing (metallurgy) ,Boron doping ,symbols ,Optoelectronics ,Fano resonance ,General Materials Science ,business ,Silicon nanowires ,Raman spectroscopy ,Spectroscopy - Published
- 2020
13. Modelling of Phosphorus and Boron Doping Concentration on SOI Wafer Based Diffusion Process
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Anak Agung Ngurah Gde Sapteka, Kadek Amerta Yasa, Politeknik Negeri Bali, and Anak Agung Ngurah Made Narottama
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concentration ,soi ,Materials science ,business.industry ,lcsh:T ,Phosphorus ,diffusion ,Silicon on insulator ,chemistry.chemical_element ,lcsh:Technology ,Diffusion process ,chemistry ,lcsh:TA1-2040 ,Boron doping ,Optoelectronics ,Wafer ,phosphorus ,business ,boron ,lcsh:Engineering (General). Civil engineering (General) - Abstract
High concentration of Boron and Phosphorus elements are required in diffusion process during the fabrication of semiconductor devices such as diode and transistor based on Silicon On Insulator (SOI) wafer. Achieving high level of these elements’ concentration is the entry point for further research in the field of electronics. For this reason, the concentration of the both elements was tested by flowing Boron and Phosphorus gas with flow rate of 1.5 litre per minute into the Nitrogen furnace for 5 minutes towards the surface of the SOI wafer samples at temperatures of 880, 900 and 950 degrees Celsius. This test was carried out at Michiharu Tabe Laboratory, Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan. Furthermore, the resistivity measurements of samples with Boron and Phosphorus doping were carried out. The results of resistivity were then converted to obtain the concentrations of Boron and Phosphorus on the surface of SOI wafer sample. From the concentration and temperature data, it is obtained the modelling of concentration to temperature function for Boron and Phosphorus. The modelling results show that there is a linear correlation between high concentrations of Boron and Phosphorus to temperature.
- Published
- 2020
14. Impact of Postplating Annealing on Defect Activation in Boron-Doped PERC Solar Cells
- Author
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Tim Niewelt, Benjamin Grubel, Sebastian Roder, Sven Kluska, Georg Christopher Theil, and Publica
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Materials science ,business.industry ,Annealing (metallurgy) ,0211 other engineering and technologies ,02 engineering and technology ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,Silicium-Photovoltaik ,law ,Photovoltaik ,Solar cell ,Boron doping ,Optoelectronics ,021108 energy ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Metallisierung und Strukturierung ,Common emitter - Abstract
In this article, the impact of postplating annealing on the regenerated state of boron-doped p-type passivated emitter and rear cell (PERC) solar cells with plated Ni/Cu/Ag front-side contacts is characterized. The assessment of different plating annealing profiles in the temperature range of 200-300 °C and their impact on light-induced degradation as well as on additional defects are realized by lifetime measurements of nonmetallized solar cell precursors before and after annealing. An observed lifetime degradation indicates that the current process sequence might facilitate bulk defect activation. An alternative process sequence is tested and promising results are presented.
- Published
- 2020
15. Boron-Doped Single-Walled Carbon Nanotubes with Enhanced Thermoelectric Power Factor for Flexible Thermoelectric Devices
- Author
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Moritz Greifzu, Lukas Stepien, Viktor Bezugly, Steffen Oswald, Thomas Lehmann, Gianaurelio Cuniberti, Thomas Gemming, Ye Liu, Vyacheslav O. Khavrus, Hongliu Yang, and Publica
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Materials science ,Energy Engineering and Power Technology ,02 engineering and technology ,Carbon nanotube ,010402 general chemistry ,7. Clean energy ,01 natural sciences ,law.invention ,Condensed Matter::Materials Science ,ab initio stimulation ,law ,Condensed Matter::Superconductivity ,Thermoelectric effect ,Physics::Atomic and Molecular Clusters ,Materials Chemistry ,Electrochemistry ,Chemical Engineering (miscellaneous) ,Electrical and Electronic Engineering ,flexible thermoelectric applications ,business.industry ,Single walled carbon nanotubes ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,thermoelectric measurements ,Boron doping ,Optoelectronics ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology ,business ,Thermoelectric power factor - Abstract
We report a detailed experimental and theoretical study on thermoelectric properties of boron-doped single-walled carbon nanotubes (B-SWCNTs), which are versatile building blocks of flexible thermoelectric devices. Implantations of substitutional boron dopants (0.1-0.5 atom %) in SWCNTs are realized using thermal diffusion. The after-synthesis boron doping simultaneously improves the Seebeck coefficient (S) and electrical conductivity (s) of SWCNT networks, leading to an S2s value of 226 mW/mK2. First-principle calculations indicate that a few tenths atom % of substitutional boron atoms improve the S value of semi-conducting SWCNTs but reduce the electron conductance in individual SWCNTs. The high s of B-SWCNT networks is attributed to the improved electrical transport between laterally contacted metallic and semi-conducting nanotubes. The produced B-SWCNTs are stable over high-temperature annealing or processing in liquid media, which inspired us to fabricate thermoelectric modules by a low-cost printing method. The modules demonstrate an increased thermoelectric efficiency by 76% compared to those with undoped SWCNTs. This work provides a feasible fabrication strategy and physical insights for B-SWCNT-based flexible thermoelectrics.
- Published
- 2020
16. Boron-Doped g-C6N6 Layer as a Metal-Free Photoelectrocatalyst for N2 Reduction Reaction
- Author
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Xiangmei Duan, Catherine Stampfl, and Zhao-Qin Chu
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Reaction conditions ,Materials science ,business.industry ,02 engineering and technology ,Energy consumption ,Chemical industry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Redox ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Ammonia ,chemistry.chemical_compound ,General Energy ,chemistry ,Chemical engineering ,Boron doping ,Physical and Theoretical Chemistry ,0210 nano-technology ,business ,Layer (electronics) - Abstract
Ammonia is one of the most important industrial chemicals due to its wide application in various fields. However, its synthesis requires heavy energy consumption and harsh reaction conditions. Here...
- Published
- 2019
17. P‐Type Boron‐Doped Monolayer Graphene with Tunable Bandgap for Enhanced Photocatalytic H 2 Evolution under Visible‐Light Irradiation
- Author
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Zhanli Han, Yujun Wu, Waqar Younas, Xilan Ma, Chuanbao Cao, and Youqi Zhu
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Inorganic Chemistry ,Materials science ,Band gap ,business.industry ,Organic Chemistry ,Boron doping ,Visible light irradiation ,Photocatalysis ,Optoelectronics ,Physical and Theoretical Chemistry ,business ,Monolayer graphene ,Catalysis - Published
- 2019
18. Influence of boron doping on the photosensitivity of cubic silicon carbide
- Author
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V. N. Rodionov
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Materials science ,business.industry ,Cubic silicon carbide ,lcsh:QC1-999 ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Photosensitivity ,silicon carbide ,Boron doping ,photoconductivity ,Optoelectronics ,boron doping ,photoluminescence ,Electrical and Electronic Engineering ,business ,lcsh:Physics - Abstract
Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to appearance of an efficient recombination center with the thermal activation energy 0.27 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiCB up to 500 °С and above it. In addition, the lux-ampere characteristics becomes linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiCB samples, pronounced variations of line positions in photoluminescence spectra in near-infrared range are revealed.
- Published
- 2019
19. Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells
- Author
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Donghwan Kim, Ji Yeon Hyun, Hyunju Lee, Atsushi Ogura, Inseol Song, Yoonmook Kang, Soohyun Bae, Yoshio Ohshita, Sang Won Lee, and Hae-Seok Lee
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010302 applied physics ,Passivation ,business.industry ,Rounding ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Reflectivity ,0103 physical sciences ,Boron doping ,Optoelectronics ,General Materials Science ,Fill factor ,0210 nano-technology ,Performance enhancement ,business ,Short circuit - Abstract
We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlOx- and AlOx/SiNx:H stack-passivated pyramid textured p+-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured p+-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of AlOx layers on pyramid textured p+-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance (RSW) from ∼2.5 to ∼3.7% for the AlOx/SiNx:H stack-passivated pyramid textured p+-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ∼60 and ∼100 Ω/sq p+-emitters is reduced by 0.8 and 0.6 mA/cm2, respectively under front p+-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ∼60 and ∼100 Ω/sq p+-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ∼100 Ω/sq p+-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.
- Published
- 2018
20. Author Correction: Boron-doped Nanodiamond as an Electrode Material for Aqueous Electric Double-layer Capacitors
- Author
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Takeshi Kondo, Toshifumi Tojo, Masahiro Nishikawa, Seiya Sugai, Makoto Yuasa, Takahiro Tei, and Kenjo Miyashita
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Electrode material ,Multidisciplinary ,Aqueous solution ,Materials science ,business.industry ,Science ,law.invention ,Capacitor ,law ,Boron doping ,Medicine ,Optoelectronics ,Author Correction ,business ,Nanodiamond - Abstract
Herein, a conductive boron-doped nanodiamond (BDND) particle is prepared as an electrode material for an aqueous electric double-layer capacitor with high power and energy densities. The BDND is obtained by depositing a boron-doped diamond (BDD) on a nanodiamond particle substrate with a primary particle size of 4.7 nm via microwave plasma-assisted chemical vapor deposition, followed by heat treatment in air. The BDND comprises BDD and sp
- Published
- 2021
21. Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
- Author
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Min Zhou, Oliver Reiser, Jian Zhi, Zhen Zhang, and Fuqiang Huang
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Multidisciplinary ,Materials science ,business.industry ,Science ,General Physics and Astronomy ,Nanotechnology ,General Chemistry ,General Biochemistry, Genetics and Molecular Biology ,Energy storage ,Semiconductor ,Boron doping ,Electrochemistry ,Supercapacitors ,Author Correction ,business ,Mesoporous material - Abstract
Realizing transparent and energy-dense supercapacitor is highly challenging, as there is a trade-off between energy storing capability and transparency in the active material film. We report here that interstitial boron-doped mesoporous semiconductor oxide shows exceptional electrochemical capacitance which rivals other pseudocapacitive materials, while maintaining its transparent characteristic. This improvement is credited to the robust redox reactions at interstitial boron-associated defects that transform inert semiconductor oxides into an electrochemically active material without affecting its transparency. By precisely tuning the level of doping, the pseudocapacitive reactivity of these materials is optimized, resulting in a volumetric capacitance up to 1172 F cm
- Published
- 2021
22. On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
- Author
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Fiacre Rougieux, Joyce Ann T. De Guzman, Ziv Hameiri, Vladimir P. Markevich, Yan Zhu, Saman Jafari, and Anthony R. Peaker
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minority carrier traps ,Materials science ,Silicon ,ResearchInstitutes_Networks_Beacons/photon_science_institute ,chemistry.chemical_element ,02 engineering and technology ,Photon Science Institute ,01 natural sciences ,Trap (computing) ,0103 physical sciences ,General Materials Science ,Wafer ,photoconductance decay ,010302 applied physics ,Annihilation ,light-induced degradation ,business.industry ,silicon ,Carrier lifetime ,021001 nanoscience & nanotechnology ,chemistry ,Boron doping ,Light induced ,Optoelectronics ,Degradation (geology) ,0210 nano-technology ,business ,boron-oxygen degradation - Abstract
Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only a few studies have directly investigated the precursor of the defect responsible for this degradation. In this study, using the photoconductance decay measurement method, we identify the precursor of the defect responsible for light-induced degradation. By comparing the photoconductance decay of samples in the different states, we observe the presence of a minority carrier trap in the annealed state, which is not present after degradation. Trap annihilation shows a clear anticorrelation with the generation of the recombination-active boron-oxygen defect, as determined from minority carrier lifetime measurements. Furthermore, it is concluded that a model based on a single-level trap cannot explain the doping-dependent measurements, meaning that the detected trap has two or more energy levels.
- Published
- 2021
23. High temperature operation of a monolithic bidirectional diamond switch
- Author
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Cédric Masante, Aurélien Maréchal, Nicolas Rouger, Julien Pernot, Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire de Génie Electrique de Grenoble (G2ELab ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, and ANR-16-CE05-0023,Diamond-HVDC,Electronique de Puissance efficace et réaliste à base de composants diamant dans le contexte de la conversion haute tension(2016)
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Materials science ,02 engineering and technology ,engineering.material ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,Gate oxide ,High power electronics ,MOSFET ,Materials Chemistry ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical properties characterization ,business.industry ,Mechanical Engineering ,Bidirectional ,Transistor ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,Diamond ,A diamond ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Boron doping ,engineering ,MOS-FET ,Optoelectronics ,Double gate ,0210 nano-technology ,business - Abstract
International audience; We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.
- Published
- 2020
24. Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
- Author
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D.V. Savchenko, E.N. Kalabukhova, B.D. Shanina, N.T. Bagraev, L.E. Klyachkin, A.M. Malyarenko, and V.S. Khromov
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010302 applied physics ,Materials science ,business.industry ,Cyclotron resonance ,effective mass ,02 engineering and technology ,Electron ,021001 nanoscience & nanotechnology ,Silicon nanostructures ,01 natural sciences ,lcsh:QC1-999 ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Boron doping ,Optoelectronics ,cyclotron resonance ,Electrical and Electronic Engineering ,relaxation time ,0210 nano-technology ,business ,silicon nanostructure ,lcsh:Physics - Abstract
We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0 . 214 m 0 . The obtained value of the transversal mass is higher than that reported for bulk Si. Parameters defining the energy surfaces near the valence band edge for heavy and light holes were found to be equal: A = –4.002, B = 1.0, C = 4.025, and corresponding to the experimental effective masses obtained in three orientations of the magnetic field: m lh= 0 . 172 , m lh= 0 . 157 , m lh = 0 . 163 , and m hh= 0 . 46 , m ∗ [ 111 ] = 0 . 56 , m ∗ [ 110 ] = 0 . 53 . The obtained energy band parameters and effective masses for holes have coincided with those found in bulk Si. The average values of the relaxation time of the charge carriers are found to be: τ e,1 = 2.28⋅10 –10 s; τ e,2 = 3.57⋅10 –10 s; τ lh = 6.9⋅10 –10 s; τ hh = 7.2⋅10 –10 s, which are by one order of value larger than those obtained in bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p + -n junction as well as by reduction of the scattering process due to the presence of boron dipole centers. Keywords: cyclotron resonance, effective mass, relaxation time, silicon nanostructure.
- Published
- 2018
25. Boron-doped TiO2 (B-TiO2) Thin Films Grown Using Sol-Gel Spin Coating Method
- Author
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A. D. A. Buba and D. O. Samson
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Spin coating ,Chemical engineering ,Computer Networks and Communications ,Hardware and Architecture ,business.industry ,Boron doping ,Medicine ,Dielectric ,Thin film ,business ,Refractive index ,Software ,Sol-gel - Abstract
In this study, the effect of modifying boron doping concentration on the optical properties, electrical properties and microstructural images of TiO2 thin films was investigated by the sol-gel technique by grinding TiO2 powder with a boron compound at a wavelength range of 250 nm to 850 nm. The SEM micro-images revealed the homogenous, continuous and nanocrystalline surface morphology: 10% is the tolerable amount of boron doping concentration into the TiO2 for achieving sphere-like nanostructures materials with low agglomeration. The XRD spectra of the B-TiO2 films showed anatase peaks of greater intensities when compared to the pure TiO2 film. All the films illustrate extinction coefficient in the visible region of solar spectra corresponding to the low absorption, and absorption peaks established in the ultraviolet region near 330nm with the optical transmittance varied from over 52 - 96% in the UV-Vis wavelength range. Diffuse reflectance absorption spectra analysis indicated that the incorporation of B into TiO2 material results in a substantial red shift and the absorption extends significantly into the visible range. The optical band gap energy values of the thin films were found to be 3.38, 3.35, 3.28, 3.26, and 3.36eV. This showed a low probability of raising the electron across the mobility gap with the photon energy in the visible region. The refractive index values varied between 1.891 and 1.922 depending on the percentage content of boron. Moreover, the imaginary part of the dielectric constant increase slowly, whereas the real part increases sharply and the optical conductivity was found to increase with the increase in boron addition.
- Published
- 2018
26. Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing
- Author
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Laurent Roux, Thibaut Desrues, Sébastien Dubois, Adeline Lanterne, Marianne Coig, Coralie Lorfeuvre, Frederic Milesi, Frank Torregrosa, Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Département des Technologies Solaires (DTS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Ion Beam Services (IBS), IBS, The authors would like to thank E. De Vito from CEA Leti for the SIMS measurements and analyses and the Bpifrance and FUI for their financial support through the French ISICELL project., Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
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Materials science ,Annealing (metallurgy) ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,law.invention ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI]Engineering Sciences [physics] ,B2H6 plasma ,law ,0103 physical sciences ,Solar cell ,boron doping ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Boron ,010302 applied physics ,n‐type PERT solar cells ,Renewable Energy, Sustainability and the Environment ,business.industry ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,annealing temperature ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Plasma-immersion ion implantation ,plasma‐immersion ion implantation ,Electronic, Optical and Magnetic Materials ,chemistry ,silicon solar cells ,Boron doping ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business - Abstract
International audience; Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next-generation solar cells based on crystalline silicon (c-Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high-emitter quality. In this work, we propose the use of plasma-immersion ion implantation (PIII) from B$_2$ H$_6$ gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J$_{0e}$) below 21 fA/cm$^2$ were obtained using the PIII technique regardless of the tested implanta-tion doses for sheet resistances between 110 and 160 $\Omega$/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen-printing/firing. The PIII boron emitters' performances were further tested with their integration in n-type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost. KEYWORDS annealing temperature, B$_2$ H$_6$ plasma, boron doping, n-type PERT solar cells, plasma-immersion ion implantation, silicon solar cells We report a new way to activate implanted boron emitter at low temperature that is the use of plasma-immersion ion implantation (PIII) from B$_2$H$_6$ plasma. A full activation of the emitter at 950°C was observed even for a high implantation dose corresponding to a sheet resistance of 112 $\Omega$/sq. Promising performances while being integrated in n-PERT solar cells fully doped by PIII were demonstrated with efficiency of 20.8% % using a lower annealing temperature than with BLII and a reduced production cost.
- Published
- 2019
27. Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
- Author
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Sigurd Hovden, Mikael Syväjärvi, Alexander Azarov, Quan-Bao Ma, Daniel Nilsen Wright, Ole Martin Løvvik, Annett Thøgersen, Valdas Jokubavicius, Spyros Diplas, Augustinas Galeckas, Bengt Gunnar Svensson, Jianwu Sun, and Patricia Almeida Carvalho
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inorganic chemicals ,010302 applied physics ,Photoluminescence ,Materials science ,business.industry ,Mechanical Engineering ,Doping ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Acceptor ,Mechanics of Materials ,0103 physical sciences ,Boron doping ,Optoelectronics ,General Materials Science ,Sublimation (phase transition) ,0210 nano-technology ,business - Abstract
In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000°C have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects.
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- 2018
28. Doubly boron-doped pentacenes as emitters for OLEDs
- Author
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Michael Bolte, Matthias Wagner, Guoyun Meng, Alexandra John, Hans-Wolfram Lerner, Suning Wang, and Tai Peng
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Anthracene ,Materials science ,010405 organic chemistry ,business.industry ,Doping ,General Chemistry ,010402 general chemistry ,01 natural sciences ,Fluorescence ,0104 chemical sciences ,chemistry.chemical_compound ,chemistry ,Boron doping ,Materials Chemistry ,OLED ,Optoelectronics ,Quantum efficiency ,business ,Diode ,Common emitter - Abstract
A new class of benchtop-stable boron-doped pentacenes, i.e., 5,14-dimesityl-5,14-dihydro-5,14-diborapentacene (3H) and its 2,3-dihalogenated derivatives, 3F and 3Cl, have been successfully applied as emitters in fluorescent organic light-emitting diodes (OLEDs). The best performance was achieved with 2% of the blue emitter 3H doped in 9,10-di-(2-naphthyl)anthracene (ADN) as the emitting layer (turn-on voltage Von = 3.3 V, λem = 476 nm, maximum external quantum efficiency ηext = 3.4% with a negligible roll-off up to 10 000 cd m−2, maximum luminance Lmax = 39 180 cd m−2). Contrary to the blue-emitting 3H-based device, 3F- and 3Cl-containing OLEDs produced turquoise (484 nm) and green (492 nm) light, respectively.
- Published
- 2018
29. Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
- Author
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Andrei Mihaila, Philippe Godignon, Josep Montserrat, Maria Cabello, Lars Knoll, Victor Soler, and Jose Rebollo
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010302 applied physics ,Materials science ,business.industry ,Mechanical Engineering ,Oxide ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,chemistry.chemical_compound ,chemistry ,Mechanics of Materials ,Gate oxide ,0103 physical sciences ,Boron doping ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Boron - Abstract
In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper we study the effect of this treatment on 6H-SiC MOSFETs and we compare it to their 4H-SiC counterparts. The gate oxide boron treatment highly increases mobility values in 4H-SiC whereas the increase is lower in 6H-SiC. The mobility increase by the boron treatment in 4H-SiC MOSFETs is related to the decrease of near interface oxide traps (NIOTs). Then, a different NIOTs density and energy location can be seen as a possible explanation for the different mobility improvement behavior seen in both polytypes.
- Published
- 2019
30. Diamond Radiation Detector with Built‐In Boron‐Doped Neutron Converter Layer
- Author
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Hidenori Mimura, Toru Aoki, Taku Miyake, Tomoaki Masuzawa, Hisaya Nakagawa, Takayuki Nakano, Katsuyuki Takagi, and Takatoshi Yamada
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Materials science ,business.industry ,Diamond ,Surfaces and Interfaces ,engineering.material ,Condensed Matter Physics ,Particle detector ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Boron doping ,Materials Chemistry ,engineering ,Optoelectronics ,Neutron ,Crystallite ,Electrical and Electronic Engineering ,business ,Layer (electronics) ,Neutron converter - Published
- 2021
31. (Invited) Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots
- Author
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Seiichi Miyazaki and Katsunori Makihara
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Core shell ,Materials science ,Annealing (metallurgy) ,Quantum dot ,business.industry ,Boron doping ,Optoelectronics ,Light emission ,business - Published
- 2021
32. Effects of boron doping on the fabrication of dense 6H-SiC ceramics by high-temperature physical vapor transport
- Author
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J Huang, B B Liu, and J F Yang
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History ,Fabrication ,Materials science ,business.industry ,visual_art ,Boron doping ,visual_art.visual_art_medium ,Optoelectronics ,Ceramic ,business ,Computer Science Applications ,Education - Abstract
In this paper, boron-doped dense 6H-SiC ceramics was fabricated by the high-temperature physical vapor transport (HTPVT) method. The effect of B doping on the crystal structure stability of 6H-SiC was investigated based on density functional theory (DFT). The results show that B doping can be realized even under thermodynamical equilibrium conditions. Nevertheless, it is found that the B doping effects on the (0001) of Si-plane and (000-1) of C-plane are significantly different. The doping experiments demonstrated that B can observably change the crystal growth morphology, leading to the formation of elongated 6H-SiC crystals.
- Published
- 2021
33. Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains*
- Author
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Shaoheng Cheng, Jing-Cheng Wang, Hao Chen, Yao-Feng Liu, Qiliang Wang, Lin-Feng Wan, Hongdong Li, Liuan Li, and Cao-Yuan Mu
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Materials science ,business.industry ,Single crystal diamond ,Boron doping ,General Physics and Astronomy ,Optoelectronics ,Schottky diode ,Crystallite ,business ,Ohmic contact - Abstract
Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p+ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (∼ 1.1 × 1021 cm−3) is detected on the HPDG with respect to the SCD region (∼ 5.4 × 1020 cm−3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current–voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
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- 2021
34. Stability Study of Silicon Heterojunction Solar Cells Fabricated with Gallium‐ and Boron‐Doped Silicon Wafers
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I. A. Nyapshaev, Konstantin Emtsev, D. A. Andronikov, A. N. Abramov, Matthew Wright, S. N. Abolmasov, Bruno Vicari Stefani, Brett Hallam, Anastasia Soeriyadi, and Moonyong Kim
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Materials science ,Silicon ,Stability study ,business.industry ,Energy Engineering and Power Technology ,chemistry.chemical_element ,Heterojunction ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,Boron doping ,Silicon heterojunction ,Degradation (geology) ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,Gallium ,business - Published
- 2021
35. Raman diagnostics of free charge carriers in boron‐doped silicon nanowires
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Tetyana Nychyporuk, V. Yu. Timoshenko, S. P. Rodichkina, Alexander V. Pavlikov, Vladimir Lysenko, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and INL - Spectroscopies et Nanomatériaux (INL - S&N)
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Materials science ,02 engineering and technology ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,symbols.namesake ,[SPI]Engineering Sciences [physics] ,0103 physical sciences ,General Materials Science ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010306 general physics ,Silicon nanowires ,Spectroscopy ,ComputingMilieux_MISCELLANEOUS ,Doping profile ,business.industry ,Fano resonance ,021001 nanoscience & nanotechnology ,Micro raman spectroscopy ,Boron doping ,symbols ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,Charge carrier ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
International audience
- Published
- 2019
36. Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion
- Author
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Xinfang Zhang, Shaofeng Shen, Aming Xie, Fan Wu, Ruonan Liu, and Qingya Sun
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Materials science ,microwave absorption ,business.industry ,General Chemical Engineering ,reflection loss ,Reflection loss ,Doping ,effective absorption bandwidth ,chemistry.chemical_element ,Carbon nanotube ,Dielectric ,Microstructure ,Article ,law.invention ,Chemistry ,chemistry ,law ,Optoelectronics ,boron doping ,General Materials Science ,Boron ,Absorption (electromagnetic radiation) ,business ,QD1-999 ,Carbon - Abstract
It is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA performance of CNTs was improved under the synergistic action of B and N atoms. The B,N-doped carbon nanotubes (B,N-CNTs) exhibited excellent MA performance, where the value of minimum reflection loss was −40.04 dB, and the efficient absorption bandwidth reached 4.9 GHz (10.5–15.4 GHz). Appropriate conductance loss and multi-polarization loss provide the main contribution to the MA of B,N-CNTs. This study provides a novel method for the design of CNTs related MA materials.
- Published
- 2021
37. Erratum: 'Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals' [AIP Advances 10, 035115 (2020)]
- Author
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Kenichi Oikawa, Kouichi Hayashi, Wataru Saito, Kenji Ohoyama, Masahide Harada, Yuzuru Miyazaki, Kazuya Sugimoto, Kei Hayashi, Yasuhiro Inamura, and Naohisa Happo
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Materials science ,business.industry ,Boron doping ,Thermoelectric effect ,General Physics and Astronomy ,Optoelectronics ,Crystal structure ,business ,lcsh:Physics ,lcsh:QC1-999 - Published
- 2021
38. Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers
- Author
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Ryosuke Takanashi, Takeshi Tawara, Koichi Murata, Tetsuya Miyazawa, Anli Yang, and Hidekazu Tsuchida
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010302 applied physics ,Materials science ,business.industry ,Doping ,PIN diode ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,Carrier lifetime ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,chemistry ,Aluminium ,law ,0103 physical sciences ,Boron doping ,Optoelectronics ,Degradation (geology) ,0210 nano-technology ,business ,Boron ,Layer (electronics) - Abstract
The carrier lifetime control in p-type 4H-SiC epilayers with intentional aluminum (Al) and boron (B) doping is demonstrated as part of work to develop a p-type “recombination-enhancing layer” for n-channel insulated gate bipolar devices fabricated on p-type substrates. The (Al + B)-doped epilayers (Al: 5 × 1017, B: 4 × 1016 cm−3) showed a very short minority carrier lifetime of less than 20 ns at 293 K, resembling that of highly Al-doped epilayers (Al: 1 × 1019 cm−3). Besides, the minority carrier lifetimes in (Al + B)-doped epilayers are stable against post-annealing in Ar and H2 ambient, while that of Al-doped epilayers varied considerably. PiN diodes with a 10 μm-thick (Al + B)-doped buffer layer inserted on p-type substrates showed no evident degradation after a stress test under a pulse current density of 2000 A/cm2.
- Published
- 2021
39. In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain
- Author
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Michael Kennett, Sarah Evans, Patrick Flanagan, Hong Yu, C. Gaire, Hsien-Ching Lo, Qi Yi, Jianwei Peng, Owen Hu, Michael Willemann, and Judson R. Holt
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In situ ,Materials science ,business.industry ,Boron doping ,Electrical engineering ,Optoelectronics ,business ,Epitaxy - Abstract
In-situ Boron doped embedded SiGe epitaxy has been widely used for CMOS source/drain in advanced technology nodes, from its introduction in planar devices to its more recent application in FinFETs. Compared to planar technology, FinFETs have the benefit of improved short channel effect, which allows for significantly higher in-situ doping level for lower contact resistance. This work explores the source/drain expitaxy design differences between planar and FinFET transistors, and how the in-situ doped epitaxy process can be optimized to address the call for a higher doping level in the FinFET source/drain. In particular, we observe a competing relationship between Germanium and Boron incorporation -- increasing Ge incorporation generally lowers boron doping, and increased boron incorporation generally lowers Ge. However, our work shows that the limit of Boron doping can be boosted by increasing Ge percentage, and furthermore we propose a Si-Ge-B phase diagram based on this experimental data. Outside of the soluble area of the phase diagram defective epitaxy is observed, featuring Boron-rich incoherent phase or Boron segregation. Finally, we present device data that show the performance benefit when Ge% and Boron is optimized according to the phase diagram, characterized by lower Ron and higher drive current.
- Published
- 2016
40. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride
- Author
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Hongzhe Wang, Chao Chen, Xi Yang, Yiling Sun, and Miao Pan
- Subjects
inorganic chemicals ,Materials science ,Silicon ,Passivation ,business.industry ,Doping ,technology, industry, and agriculture ,General Physics and Astronomy ,chemistry.chemical_element ,Surfaces and Interfaces ,General Chemistry ,Carrier lifetime ,Condensed Matter Physics ,Surfaces, Coatings and Films ,chemistry.chemical_compound ,chemistry ,Silicon nitride ,Boron doping ,Optoelectronics ,Wafer ,Thin film ,business - Abstract
This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.
- Published
- 2015
41. Photoluminescence properties of boron doped InSe single crystals
- Author
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Akın Bacıoğlu, Mevlüt Karabulut, and Hüseyin Ertap
- Subjects
Materials science ,Photoluminescence ,Band gap ,business.industry ,Exciton ,Biophysics ,Analytical chemistry ,chemistry.chemical_element ,General Chemistry ,Condensed Matter Physics ,Biochemistry ,Atomic and Molecular Physics, and Optics ,Condensed Matter::Materials Science ,Full width at half maximum ,chemistry ,Impurity ,Condensed Matter::Superconductivity ,Boron doping ,Optoelectronics ,Condensed Matter::Strongly Correlated Electrons ,Spontaneous emission ,business ,Boron - Abstract
Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons ( n =1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content.
- Published
- 2015
42. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors
- Author
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Yongxun Liu, Kazuhiko Endo, Koichi Fukuda, Hiroyuki Ota, Shin Ichi O'uchi, Takahiro Mori, Takashi Matsukawa, Yukinori Morita, Shinji Migita, Meishoku Masahara, and Wataru Mizubayashi
- Subjects
Materials science ,business.industry ,Transistor ,Electrical engineering ,chemistry.chemical_element ,Condensed Matter Physics ,Epitaxy ,Electronic, Optical and Magnetic Materials ,law.invention ,Quality (physics) ,chemistry ,law ,Tunnel junction ,Boron doping ,Materials Chemistry ,Optoelectronics ,Field-effect transistor ,Electrical and Electronic Engineering ,business ,Arsenic ,Communication channel - Abstract
We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.
- Published
- 2015
43. Over 59 mV pH −1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron‐Doped Diamond Solution‐Gate Field‐Effect Transistors
- Author
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Mohd Syamsul, Yu Hao Chang, Yutaro Iyama, Shuto Kawaguchi, Kaito Tadenuma, Shaili Falina, Teruaki Takarada, and Hiroshi Kawarada
- Subjects
Boron doped diamond ,Materials science ,business.industry ,chemistry.chemical_element ,Surfaces and Interfaces ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,Boron doping ,Materials Chemistry ,Ph sensing ,Fluorine ,Optoelectronics ,Field-effect transistor ,Fluorocarbon ,Electrical and Electronic Engineering ,Thin film ,business ,Sensitivity (electronics) - Published
- 2020
44. Large rectification ratio induced by nitrogen and boron doping in adjacent armchair graphene nanoribbons
- Author
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Payman Nayebi, Soleyman Majidi, and Hassan Ghaziasadi
- Subjects
Materials science ,Condensed matter physics ,business.industry ,Mechanical Engineering ,Doping ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Nitrogen ,0104 chemical sciences ,Threshold voltage ,Semiconductor ,chemistry ,Rectification ,Mechanics of Materials ,Boron doping ,General Materials Science ,0210 nano-technology ,business ,Boron ,Graphene nanoribbons - Abstract
The rectification behavior of two and three separated armchair graphene nanoribbons (AGNRs) which one of them plays the role of channel and others play the role of side gates is investigated. The tight-binding density functional approach (DFTB) and non-equilibrium Green function method (NEGF) are employed for calculations. The nitrogen (N) and boron (B) atoms are used to dope the side gates. The results show that these devices have low threshold voltage and their rectification ratios are higher than one doped AGNR device, with the maximum value of 3.18 × 108. Also, without doping the channel, it can become to n-type or p-type semiconductor, only by doping the side gates. The current-voltage characteristics of these devices are similar and have little dependence on side gates width.
- Published
- 2020
45. Carrier concentration variety over multisectoral boron-doped HPHT diamond
- Author
-
Anna Solomnikova, Vadim Lukashkin, V. I. Zubkov, A V Solomonov, and Alexey Kuznetsov
- Subjects
Boron doped diamond ,Materials science ,business.industry ,Atomic force microscopy ,Diamond ,engineering.material ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Admittance spectroscopy ,Capacitance–voltage profiling ,Boron doping ,Materials Chemistry ,engineering ,Optoelectronics ,Electrical and Electronic Engineering ,business - Published
- 2020
46. Large‐Area Boron‐Doped 1.6 Ω cm p‐Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open‐Circuit Voltage of 736 mV and Efficiency of 22.0%
- Author
-
Bruno Vicari Stefani, Matthew Wright, Moonyong Kim, Daniel Chen, Yuchao Zhang, Anastasia Soeriyadi, and Brett Hallam
- Subjects
010302 applied physics ,Materials science ,Silicon ,Open-circuit voltage ,business.industry ,Energy Engineering and Power Technology ,chemistry.chemical_element ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,0103 physical sciences ,Boron doping ,Silicon heterojunction ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Published
- 2020
47. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures
- Author
-
Giti A. Khodaparast, Michael Clavel, Michael A. Meeker, Mantu K. Hudait, Jheng-Sin Liu, Yuantao Xie, Jean J. Heremans, and Shuvodip Bhattacharya
- Subjects
010302 applied physics ,Materials science ,business.industry ,Doping ,Physics::Optics ,General Physics and Astronomy ,chemistry.chemical_element ,Heterojunction ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Condensed Matter::Materials Science ,chemistry ,Condensed Matter::Superconductivity ,0103 physical sciences ,Boron doping ,Optoelectronics ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology ,business ,Boron ,Molecular beam epitaxy - Abstract
The impact of elemental boron (B) doping on the structural, optical, and magnetotransport properties of epitaxial Ge/AlAs/GaAs(001) heterostructures, grown by solid-source molecular beam epitaxy, w...
- Published
- 2020
48. Boron-doped graphene coated Au@SnO2 for high-performance triethylamine gas detection
- Author
-
Pengchao Si, Jinkui Feng, Tong Liu, Yuanyuan Li, Ruiqin Peng, Lijie Ci, and Jonghwan Suhr
- Subjects
Detection limit ,Materials science ,business.industry ,Graphene ,Oxide ,Parts-per notation ,Heterojunction ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,law.invention ,chemistry.chemical_compound ,chemistry ,Power consumption ,law ,Boron doping ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Triethylamine - Abstract
Confronted with challenges in obtaining lower power consumption and higher gas response for triethylamine (TEA) gas detection, it becomes very important to rational induce heterointerface to enhance gas-sensing properties. In this work, we demonstrate that the boron-doped reduced graphene oxide (B-RGO) coated Au@SnO2 heterostructure is using as the sensor material for TEA gas detection with a response of 69.1% for 1 ppm of TEA gas at low working temperature (100 °C). With the wrapping of B-RGO, the response value of the Au@SnO2-based sensor for TEA detection is boosted by 5.6 times and a detection limit of ppb (parts per billion) level is achieved. The sensors are selectively sensitive to TEA gas, which is about 10 times higher than the response to the other four gases. The outstanding sensing performance is mainly attributed to the synergistic effect of the B-RGO/SnO2 and Au/SnO2 heterostructure. The present work shows that heterostructure engineering together with boron-doped graphene has excellent potential for promoting highly selective and low concentration noxious gas sensing detection.
- Published
- 2020
49. Boron-doped III–V semiconductors for Si-based optoelectronic devices
- Author
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Bo Xu, Zhijie Wang, Zhanguo Wang, and Chao Zhao
- Subjects
010302 applied physics ,Materials science ,Fabrication ,Silicon ,business.industry ,Photodetector ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Optoelectronic integrated circuits ,Epitaxy ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Thermal dissipation ,Semiconductor ,chemistry ,0103 physical sciences ,Boron doping ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although heterogeneous integration of III–V semiconductors on Si has been well-developed, the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices. The monolithic growth of III–V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers. On the other hand, the growth of lattice-matched B-doped group-III–V materials is an attractive area of research. However, due to the difficulty in growth, the development is still relatively slow. Herein, we present a comprehensive review of the recent achievements in this field. We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III–V materials. The unique surface morphology, crystallinity, and optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective optoelectronic applications. Finally, we detail the obstacles and challenges to exploit the potential for such practical applications fully.
- Published
- 2020
50. Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices
- Author
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Roger Loo, Bastien Douhard, Clement Porret, Anurag Vohra, Geoffrey Pourtois, Andriy Hikavyy, Johan Meersschaut, Robert Langer, Janusz Bogdanowicz, Erik Rosseel, and Nobuya Nakazaki
- Subjects
Materials science ,business.industry ,chemistry.chemical_element ,Germanium ,Surfaces and Interfaces ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,PMOS logic ,chemistry ,Boron doping ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business - Published
- 2019
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