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On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
- Source :
- Jafari, S, Zhu, Y, Rougieux, F, De Guzman, J A T, Markevich, V P, Peaker, A R & Hameiri, Z 2021, ' On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon ', ACS Applied Materials and Interfaces, vol. 13, no. 5, pp. 6140–6146 . https://doi.org/10.1021/acsami.0c17549
- Publication Year :
- 2021
-
Abstract
- Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only a few studies have directly investigated the precursor of the defect responsible for this degradation. In this study, using the photoconductance decay measurement method, we identify the precursor of the defect responsible for light-induced degradation. By comparing the photoconductance decay of samples in the different states, we observe the presence of a minority carrier trap in the annealed state, which is not present after degradation. Trap annihilation shows a clear anticorrelation with the generation of the recombination-active boron-oxygen defect, as determined from minority carrier lifetime measurements. Furthermore, it is concluded that a model based on a single-level trap cannot explain the doping-dependent measurements, meaning that the detected trap has two or more energy levels.
- Subjects :
- minority carrier traps
Materials science
Silicon
ResearchInstitutes_Networks_Beacons/photon_science_institute
chemistry.chemical_element
02 engineering and technology
Photon Science Institute
01 natural sciences
Trap (computing)
0103 physical sciences
General Materials Science
Wafer
photoconductance decay
010302 applied physics
Annihilation
light-induced degradation
business.industry
silicon
Carrier lifetime
021001 nanoscience & nanotechnology
chemistry
Boron doping
Light induced
Optoelectronics
Degradation (geology)
0210 nano-technology
business
boron-oxygen degradation
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Jafari, S, Zhu, Y, Rougieux, F, De Guzman, J A T, Markevich, V P, Peaker, A R & Hameiri, Z 2021, ' On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon ', ACS Applied Materials and Interfaces, vol. 13, no. 5, pp. 6140–6146 . https://doi.org/10.1021/acsami.0c17549
- Accession number :
- edsair.doi.dedup.....3d5419f059bf44fe1a7924dd1cb4eb83