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Examines the kinetics of oxidation in high-pressure direct current-sputtered amorphous silicon (Si). Information on the two mechanisms of oxidation; Comparison between the density of α-Si and &alpha-Ge; Consequences of the existence of porous structure; Approximation of the total absorbance spectrum of the mixture.

Details a study which performed isothermal annealing on a hydrogenated amorphous silicon sample deposited at low temperature in a glow discharge reactor. Dependence of dark conductivity and photoconductivity on annealing time; Experimental procedures; Equation for computing the variation in photoconductivity.

Presents a study which investigated the role of surface in sputtered amorphous silicon. Method of the study; Results and discussion; Conclusion.

Studies the oxidation of hydrogenated amorphous silicon carbide films prepared by glow-discharge decomposition of gaseous mixtures of silane and methane by using infrared absorption spectroscopy. Infrared differential absorbance spectrum of a carbon-rich sample obtained after six month room-temperature exposure to air; Overview of differential absorption spectra resulting from the oxidation of a sample; Presence of a large fraction of CH[sub3] precursor radical.