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Direct evidence of porosity in carbon-rich hydrogenated amorphous silicon carbide films.

Authors :
Arce, R.
Koropecki, R. R.
Buitrago, R. H.
Alvarez, F.
Chambouleyron, I.
Source :
Journal of Applied Physics. 11/1/1989, Vol. 66 Issue 9, p4544. 3p.
Publication Year :
1989

Abstract

Studies the oxidation of hydrogenated amorphous silicon carbide films prepared by glow-discharge decomposition of gaseous mixtures of silane and methane by using infrared absorption spectroscopy. Infrared differential absorbance spectrum of a carbon-rich sample obtained after six month room-temperature exposure to air; Overview of differential absorption spectra resulting from the oxidation of a sample; Presence of a large fraction of CH[sub3] precursor radical.

Details

Language :
English
ISSN :
00218979
Volume :
66
Issue :
9
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7654990
Full Text :
https://doi.org/10.1063/1.343926