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Your search keyword '"Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)"' showing total 85 results
Start Over Author "Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)" Topic 021001 nanoscience & nanotechnology
85 results on '"Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)"'

1. AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Author

Claire Besancon, Delphine Néel, Dalila Make, Joan Manel Ramírez, Giancarlo Cerulo, Nicolas Vaissiere, David Bitauld, Frédéric Pommereau, Frank Fournel, Cécilia Dupré, Hussein Mehdi, Franck Bassani, Jean Decobert, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Technology, direct wafer bonding, QH301-705.5, QC1-999, 02 engineering and technology, semiconductor lasers, 020210 optoelectronics & photonics, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Biology (General), Instrumentation, QD1-999, [PHYS]Physics [physics], Fluid Flow and Transfer Processes, silicon photonics, Process Chemistry and Technology, epitaxial growth, Physics, General Engineering, 021001 nanoscience & nanotechnology, Engineering (General). Civil engineering (General), Computer Science Applications, Chemistry, TA1-2040, 0210 nano-technology, heterogeneous integration
Abstract

International audience; The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.

Published
2022

2. Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation

Author

Thierry Baron, Bruno Fernandez, Masiar Sistani, Eric Robin, Nicolas Pauc, Maria Spies, Bassem Salem, Minh Anh Luong, Alois Lugstein, Martien Den Hertog, Pascal Gentile, Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Vienna University of Technology (TU Wien), Matériaux, Rayonnements, Structure (NEEL - MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanofabrication (NEEL - Nanofab), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Technical University of Vienna [Vienna] (TU WIEN), Technische Universität Wien (TU Wien), Matériaux, Rayonnements, Structure (MRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), and Nanofab (Nanofab)

Subjects
solid state exchange reaction, Materials science, in-situ transmission electron microscopy, Alloy, Nanowire, 02 engineering and technology, engineering.material, Thermal diffusivity, 01 natural sciences, Si/SixGe1-x heterostructure, Crystallinity, 0103 physical sciences, General Materials Science, 010302 applied physics, Dopant, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Electrical contacts, Diffusion process, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], engineering, Optoelectronics, solidification, 0210 nano-technology, business
Abstract

International audience; While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopant atoms into the substitutional positions in the matrix and improve the device properties. Typically, such a diffusion process will create a concentration gradient extending over increasingly large regions, without possibility to reverse this effect. On the other hand, while the bottom up growth of semiconducting nanowires is interesting, it can still be difficult to fabricate axial heterostructures with high control. In this paper, we report a reversible thermal diffusion process occurring in the solid-state exchange reaction between an Al metal pad and a SixGe1-x alloy nanowire observed by in-situ transmission electron microscopy. The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted SixGe1-x part, forming an axial Al/Si/SixGe1-x heterostructure. Upon heating or (slow) cooling, the Al metal can repeatably move in and out of the SixGe1-x alloy nanowire while maintaining the rod-like geometry and crystallinity, allowing to fabricate and contact nanowire heterostructures in a reversible way in a single process step, compatible with current Si based technology. This interesting system is promising for various applications, such as phase change memories in an all crystalline system with integrated contacts, as well as Si/SixGe1-x/Si heterostructures for near-infrared sensing applications.

Published
2020

3. Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma

Author

Hervé Rabat, M. Bonvalot, Fadi Zoubian, Moustapha Jaffal, Christophe Vallée, Viet Huong Nguyen, David Muñoz-Rojas, Dunpin Hong, Abderrahime Sekkat, Chiara Crivello, Olivier Aubry, César Masse de la Huerta, Juan Rubio-Zuazo, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), ANR-16-CE05-0021,DESPATCH,Développement de la méthode à séparation spatiale de dépôt par couches atomiques assistée plasma pour des applications photovoltaïques(2016), and ANR-17-CE05-0034,OXYGENE,OXYdes fonctionnalisés pour jonctions ultra-minces et contacts tunnel : vers une nouvelle GENEration de cellules photovoltaïques en silicium cristallin(2017)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, General Chemical Engineering, Atmospheric-pressure plasma, 02 engineering and technology, General Chemistry, Chemical vapor deposition, Dielectric, 010402 general chemistry, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, Chemical engineering, Oxygen plasma, Materials Chemistry, Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

SiO2 constitutes one of the most widely used dielectric materials in the microelectronics, packaging, and optical industries. Therefore, the development of new processes to deposit SiO2 at low temp...

Published
2020

4. Tuneable polarity and enhanced piezoelectric response of ZnO thin films grown by metal–organic chemical vapour deposition through the flow rate adjustment

Author

X. Mescot, Quang Chieu Bui, Gustavo Ardila, Bassem Salem, Carmen Jiménez, Odette Chaix-Pluchery, Isabelle Gélard, Sarah Boubenia, Hervé Roussel, Vincent Consonni, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and ANR-20-CE09-0005,SCENIC,Effets de charges de surface dans les nanofils fonctionnalisés de GaN et ZnO : Etude et contrôle(2020)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, 0104 chemical sciences, Volumetric flow rate, Metal, chemistry, Chemical engineering, Chemistry (miscellaneous), Impurity, visual_art, visual_art.visual_art_medium, General Materials Science, Thin film, 0210 nano-technology, Chemical composition
Abstract

International audience; The formation process of ZnO thin films grown by pulsed-liquid injection metal–organic chemical vapour deposition (PLI-MOCVD) has a major impact on its morphological, structural, electrical and piezoelectric properties, but their correlation has not been elucidated yet nor decoupled from the thickness effects. In this work, we investigate the influence of the O2 gas and diethylzinc (DEZn) solution flow rates on the properties of ZnO thin films with a given thickness and grown on silicon. We show that the O2/DEZn flow rate ratio through the oxygen chemical potential significantly affects the O- and Zn-polarity domain distribution, their related size and shape, the chemical composition, and the incorporation of microstructural defects and residual impurities, resulting in a direct effect on the piezoelectric amplitude of ZnO thin films. In particular, the Zn-polarity domains are found to systematically exhibit a larger piezoelectric amplitude than the O-polarity domains, regardless of the O2/DEZn flow rate ratio. A comprehensive description recapitulating the formation process of ZnO thin films through three different regimes depending on the O2/DEZn flow rate ratio is further gained. These results demonstrate the crucial ability of the PLI-MOCVD system to tune the polarity of ZnO thin films along with other suitable properties for piezoelectric applications by carefully adjusting the O2 gas and DEZn solution flow rates.

Published
2022

5. Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers

Author

Gwenaelle Pound-Lana, Gilles Cunge, Sébastien Cavalaglio, Philippe Bézard, Xavier Chevalier, Guillaume Fleury, Marc Zelsmann, Camille Petit-Etienne, Benjamin Cabannes-Boué, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie des Polymères Organiques (LCPO), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Arkema (Arkema), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Etching (microfabrication), 0103 physical sciences, Microelectronics, General Materials Science, Lamellar structure, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Nanolithography, chemistry, Silicon nitride, Optoelectronics, Dry etching, 0210 nano-technology, business, [PHYS.COND.CM-SCM]Physics [physics]/Condensed Matter [cond-mat]/Soft Condensed Matter [cond-mat.soft], Layer (electronics)
Abstract

International audience; Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon-containing block copolymer. Both an oxidizing Ar/O2 plasma and a nonoxidizing H2/N2 plasma are used to remove the topcoat material of our BCP stack and reveal the perpendicular lamellae. Under Ar/O2 plasma, an interfacial layer stops the etch process at the topcoat/BCP interface, which provides an etch-stop but also requires an additional CF4-based breakthrough plasma for further etching. This interfacial layer is not present in H2/N2. Increasing the H2/N2 ratio leads to more profound modifications of the silicon-containing lamellae, for which a chemistry in He/N2/O2 rather than Ar/O2 plasma produces a smoother and more regular lithographic mask. Finally, these features are successfully transferred into silicon, silicon-on-insulator, and silicon nitride substrates. This work highlights the performance of a silicon-containing block copolymer at 18 nm pitch to pattern relevant hard-mask materials for various applications, including microelectronics.

Published
2021

6. Surface Oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications

Author

Ludovic Goffart, Bernard Pelissier, Gauthier Lefevre, Gabriele Navarro, Christophe Vallée, Yannick Le Friec, Jean–Philippe Reynard, STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, Work (thermodynamics), Materials science, Doping, Nitrogen doping, General Physics and Astronomy, 02 engineering and technology, Surfaces and Interfaces, General Chemistry, GeSbTe, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Kinetic energy, 01 natural sciences, Engineering physics, Surfaces, Coatings and Films, Phase-change memory, chemistry.chemical_compound, chemistry, 0103 physical sciences, Surface oxidation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Layer (electronics), ComputingMilieux_MISCELLANEOUS
Abstract

Phase-Change Memory technology is increasing in maturity and in interest for next generation of non-volatile memory applications. In order to take advantage of the properties of innovative phase-change layers such as Ge-rich GST alloys, the understanding of the phenomena behind the possible evolution of the layer in time and temperature becomes fundamental. In this work, we present in detail the protocol we have developed using pARXPS technique, to reliably measure the surficial oxidation thickness on Ge-rich GST alloys with different nitrogen doping level. A double oxidation kinetic was observed on these samples for the first time, as well as an influence by nitrogen doping, and analyzed in detail by complementarily using pARXPS and TEM-EDX techniques.

Published
2021

7. Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

Author

Mickael Martin, Farzan Gity, J. Moeyaert, Bérangère Hyot, Thierry Baron, Paul K. Hurley, Shubhadeep Bhattacharjee, Hanako Okuno, Denis Rouchon, Pauline Hauchecorne, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Tyndall National Institute [Cork], Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes (UGA), IBM Zurich Research Laboratory, and IBM

Subjects
gallium, [PHYS]Physics [physics], Materials science, Silicon, business.industry, Gallium selenide, GaSe, chemistry.chemical_element, 02 engineering and technology, Photodetection, selenide, VLS growth, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry, MOCVD, photodetectors, Optoelectronics, General Materials Science, 3D materials, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Layered semiconductor gallium selenide (GaSe) is considered a potential candidate for optoelectronic applications because of its direct band gap. Monocrystalline material is, however, a prerequisite to fully exploit these properties in devices, where one-dimensional nano-objects could be considered as a model system. As a consequence of their large surface-to-volume ratio, nano-objects such as nanoribbons are interesting for photodetection applications. Here, we report the vapor–liquid–solid growth of GaSe nanoribbons by MOCVD on 300 mm silicon substrates. A growth model is proposed on the basis of a comprehensive study of the impact of the growth parameters on the nanoribbon morphology. The nanoribbon microstructure is investigated by HR-STEM and Raman spectroscopy characterizations. HR-STEM and TEM cross-sectional observations coupled with EDX analyses reveal a monocrystalline nanoribbon core covered with a native gallium-oxide shell. Test devices are made by contacting individual nanoribbon. The current versus voltage (I–V) characteristic obtained over a range of temperature (−50 to 100 °C) in the dark and under white light illumination is fitted on the basis of a back-to-back Schottky diode model. A stable and repeatable dynamic photoresponse is measured from the GaSe nanoribbons, with an ION/IOFF ratio of 17 at room temperature.

Published
2021

8. Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Author

Erwine Pargon, S. Ghanad-Tavakoli, Camille Petit-Etienne, Jean-Pierre Landesman, Ray R. LaPierre, Juan Jiménez, N Isik-Goktas, Christophe Levallois, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Minatec, McMaster University [Hamilton, Ontario], Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad de Valladolid [Valladolid] (UVa), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Renatech+ France, RGPAS-2018-522624, Natural Sciences and Engineering Research Council of Canada, VA283P18, MINECO, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
Materials science, Acoustics and Ultrasonics, micro-PL, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], 0103 physical sciences, Pozos cuánticos, Reactive-ion etching, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, Quantum well, 010302 applied physics, business.industry, Micro-photoluminescence, Micro-fotoluminiscencia, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Microstructure, reactive ion etching, Micro photoluminescence, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Quantum wells, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, InAs x P 1−x /InP quantum wells
Abstract

Producción Científica, Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAsxP$_{1-x}$ quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were characterized by low temperature micro-photoluminescence. The photoluminescence (PL) emission associated with each of the QWs was clearly identified and a model for their line shape was implemented. PL line-scans were measured across etched ridge stripes of various widths in an optical cryostat, with a spatial resolution of 1 µm. The model for the PL spectra allowed accurate extraction of the local PL integrated intensities, spectral positions and line widths. Two different RIE processes, using CH4/H2 and CH4/Cl2, were investigated. The PL line-scans showed strong variations of the integrated PL intensities across the etched stripes. The PL intensities for all QWs increased gradually from the edge to the center of the ridge microstructures, over a length scale of 10–20 µm. On the other hand, the spectral peak position of the PL lines remained constant (within an accuracy of 0.2–0.4 meV, depending on which QW was considered) across the microstructures. These observations are discussed in terms of the mechanical stress induced by the RIE processes, the relaxation of the biaxial built-in compressive stress in the InAsP QWs (induced by the free surfaces at the vertical etched sidewalls), and also by the non-radiative recombination at these sidewalls. Altogether, this study illustrates the contribution that specially designed test structures, coupled with advanced spectroscopic characterization, can provide to the development of semiconductor photonic devices (e.g. lasers or waveguides) involving RIE processing., Natural Sciences and Engineering Research Council of Canada (grants RGPIN-2018-04015 and RGPAS-2018-522624), Junta de Castilla y León (project VA283P18), Ministerio de Economía, Industria y Competitividad (project RTI2018-101020-B-I00)

Published
2021

9. Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers

Author

Léopold Virot, Mickael Martin, Christophe Licitra, J. Da Fonseca, P. Gaillard, Christophe Jany, J. Coignus, J.M. Hartmann, Thierry Baron, J. Moeyaert, Hussein Mehdi, Charles Leroux, Bassem Salem, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Photoluminescence, Materials science, business.industry, Exciton, Physics, QC1-999, General Physics and Astronomy, Photodetector, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Photodiode, law.invention, Responsivity, law, 0103 physical sciences, Optoelectronics, Dislocation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Dark current
Abstract

Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si(001) substrates. A MQW high crystalline quality is achieved using 300 mm Ge/Si pseudo-substrates with a low threading dislocation density of 4 × 107 cm−2 from electron channeling contrast imaging measurements. The localized states in the MQW stack are investigated using temperature-dependent photoluminescence. Two non-radiative recombination channels are identified. The first one is due to delocalized excitons generated by potential’s fluctuations because of the InGaAs/AlGaAs interfacial roughness (with an activation energy below 4 meV). The second one is due to exciton quenching because of the presence of numerous threading dislocations. A low dark current density of 2.5 × 10−5 A/cm2 is measured for PDs on Ge/Si substrates, i.e., a value very close to that of the same PDs grown directly on GaAs(001) substrates. A responsivity of 36 mA/W is otherwise measured for the photodiode on Ge/Si at room temperature and at −2 V.

Published
2021

10. Effects of Thermal Annealing on the Structural and Electrical Properties of ZnO Thin Films for Boosting their Piezoelectric Response

Author

Quang Chieu Bui, X. Mescot, Carmen Jiménez, Bassem Salem, Youssouf Guerfi, Vincent Consonni, Gustavo Ardila, Hervé Roussel, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Silicon, Annealing (metallurgy), Piezoelectricity, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Coalescence, 010402 general chemistry, 01 natural sciences, Annealing, Crystallinity, Electrical resistivity and conductivity, Materials Chemistry, Thin film, Composite material, Mechanical Engineering, Metal-Organic Chemical Vapor Deposition, Metals and Alloys, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Nanostructures, chemistry, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Grain boundary, Zinc Oxide, 0210 nano-technology
Abstract

International audience; The growth process and post-deposition treatment have strong effects on the structure of ZnO thin films, which can also significantly affect their electrical and piezoelectric properties. In this report, the effect of high temperature annealing under oxygen atmosphere on ZnO stacked thin films grown on silicon by pulsed-liquid injection metal-organic chemical vapor deposition is investigated in detail. By varying the annealing temperature from 600 to 1000 °C, the structural analysis reveals the occurrence of c-axis oriented grain coarsening and growth processes associated with the improvement of crystallinity and removal of carbon impurities. The electrical resistivity also strongly varies with thermal annealing. Those variations are accompanied by an enhancement of the piezoelectric amplitude measured by piezo-response force microscopy (PFM). Interestingly, the PFM measurements reveal the predominant development of O-and Zn-polar domains at low and high temperature annealing, respectively, originating from the anisotropic grain boundary velocity. The present findings show that the high temperature annealing under oxygen atmosphere in ZnO thin films can enhance not only its piezo-amplitude but also its Zn-polarity uniformity, which unambiguously leads to the improvement of its piezoelectric performance.

Published
2021

11. Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

Author

Maxime Darnon, Erwine Pargon, Vincent Aimez, Mathieu de Lafontaine, Maite Volatier, Jean-Paul Barnes, Névine Rochat, Simon Fafard, Abdelatif Jaouad, Sylvain David, Camille Petit-Etienne, Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
Concentrated photovoltaics, Fabrication, III-V semiconductors, Hydrogen, TK7800-8360, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], Etching (microfabrication), law, 0103 physical sciences, Solar cell, T1-995, Multijunction solar cells, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Technology (General), 010302 applied physics, Plasma etching, SiCl4/H2 plasma, business.industry, Photovoltaic system, technology, industry, and agriculture, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Through cell via contacts, Wafer dicing, Electronics, 0210 nano-technology, business
Abstract

This article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture. A SiCl4/H2 chemistry was studied with different hydrogen dilutions within the plasma (0%, up to 67%) and with different cathode temperatures (20∘C, up to 200∘C). This chemistry choice creates a SiClx-based inhibiting layer on the sidewalls that promotes anisotropic etching through the epitaxial heterostructure. The study suggests that a high hydrogen flow and a low temperature reduce the chemical reactions that create sidewall erosion. A high hydrogen flow appears to provide a hydrogen passivation of the non-radiative defects on the III-V heterostructure sidewall during the etching process. III-V/Ge triple junction solar cells with standard grid line and busbar front and back contacts have been fabricated and via-holes were plasma-etched through the active layers in order to investigate the impact of hydrogen passivation on the photovoltaic performance. The results demonstrate that the hydrogen passivation enables an open-circuit voltage increase that persists even after 5 months. This plasma process can also be used for the mesa etching step on multijunction solar cells with standard contacts. Thus, it could provide an appealing pathway to increase the conversion efficiency of state-of-the-art multijunction solar cells with standard contacts. To complete the etching process, a liner is used to protect the sidewall properties and a time-multiplexed Ge etching process is proposed to finalize the patterning and even open a pathway towards III-V/Ge plasma dicing.

Published
2021

12. Optimized ultraviolet grayscale process for high vertical resolution applied to spectral imagers

Author

C. Gourgon, Jumana Boussey, Marie Panabière, Yann Ferrec, Camille Petit-Etienne, Nadine Gerges, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), DOTA, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, Clot, Marielle, and ONERA

Subjects
Materials science, Lithography, Silicon, Plasma processing, Imaging spectrometer, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Grayscale, [PHYS] Physics [physics], 010309 optics, Optics, 0103 physical sciences, Materials Chemistry, Profilometry, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Optical path length, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Plasma etching, business.industry, [SDE.IE]Environmental Sciences/Environmental Engineering, Process Chemistry and Technology, Resolution (electron density), Fabry-Perot interferometers, 021001 nanoscience & nanotechnology, Imaging spectroscopy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Resist, 0210 nano-technology, business
Abstract

International audience; NanoCarb is a miniature Fourier transform imaging spectrometer dedicated to the measurement of atmospheric CO2 and CH4. The key element of NanoCarb is an array of Fabry-Perot micro-interferometers having a stepcase shape. Lateral dimensions and height of each step depend on the used material, the focusing lenses and the targetted Optical Path Difference (OPD) to be measured. In this paper, we developed a grayscale lithography process for a large surface patterning with high vertical resolution. This process is combined with plasma etching to transfer the as-obtained resist patterns into the silicon substrate. This method is an efficient and quick way for the realization of such arrays into silicon. A low contrast resist (ma-P1225G) was used for a better control of the step height and we investigated the effect of two annealing processes on the contrast curve slope: the soft bake and the post exposure bake. Therefore, combining the two processes leads to a 20 nm step height resolution in resist and 50 nm in silicon.

Published
2021

13. How reversible are the effects of silver nanoparticles on macrophages? A proteomic-instructed view

Author

Catherine Aude-Garcia, Jacques Bourguignon, Sarah Cianférani, Anaelle Torres, Thierry Rabilloud, Karin Pernet-Gallay, Marie Carrière, Pierre-Henri Jouneau, Stéphane Ravanel, Hélène Diemer, Bastien Dalzon, Véronique Collin-Faure, Protéomique, Métaux et Différenciation (ProMD ), Laboratoire de Chimie et Biologie des Métaux (LCBM - UMR 5249), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut Pluridisciplinaire Hubert Curien (IPHC), Université de Strasbourg (UNISTRA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Plantes, Stress & Métaux (MetalStress), Physiologie cellulaire et végétale (LPCV), Institut National de la Recherche Agronomique (INRA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de la Recherche Agronomique (INRA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), [GIN] Grenoble Institut des Neurosciences (GIN), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Grenoble Alpes (UGA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), ANSES (Agence Nationale de Sécurité Alimentaire, Environnementale et du Travail) (PNREST 2011/25, Innimmunotox project), CEA toxicology program (Nanostress grant), ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011), ANR-10-EQPX-0039,NanoID,Plateforme d'identification des nanoparticules dédiée à la sécurité(2010), Rabilloud, Thierry, INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE - - Amidex2011 - ANR-11-IDEX-0001 - IDEX - VALID, Equipements d'excellence - Plateforme d'identification des nanoparticules dédiée à la sécurité - - NanoID2010 - ANR-10-EQPX-0039 - EQPX - VALID, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut National de la Recherche Agronomique (INRA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de la Recherche Agronomique (INRA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Grenoble Institut des Neurosciences (GIN), Université Joseph Fourier - Grenoble 1 (UJF)-Centre Hospitalier Universitaire [Grenoble] (CHU)-Institut National de la Santé et de la Recherche Médicale (INSERM), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Protéomique, Métaux et Différenciation (ProMD), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), ANR-11-IDEX-0001-02/11-LABX-0064,SERENADE,Vers une conception de nanomatériaux innovants, durables et sûrs(2011), ANR-11-IDEX-0001-02/11-IDEX-0001,AMIDEX,AMIDEX(2011), ANR-10-EQPX-0039/10-EQPX-0039,NanoID,Plateforme d'identification des nanoparticules dédiée à la sécurité(2010), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Recherche Agronomique (INRA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Recherche Agronomique (INRA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials Science (miscellaneous), medicine.medical_treatment, Cellular homeostasis, 02 engineering and technology, 010501 environmental sciences, medicine.disease_cause, 01 natural sciences, Silver nanoparticle, Nitric oxide, chemistry.chemical_compound, Immune system, [SDV.BBM.GTP]Life Sciences [q-bio]/Biochemistry, Molecular Biology/Genomics [q-bio.GN], medicine, Macrophage, 0105 earth and related environmental sciences, General Environmental Science, Chemistry, Lipid metabolism, 021001 nanoscience & nanotechnology, Cell biology, [SDV.TOX] Life Sciences [q-bio]/Toxicology, Cytokine, [SDV.TOX]Life Sciences [q-bio]/Toxicology, [SDV.BBM.GTP] Life Sciences [q-bio]/Biochemistry, Molecular Biology/Genomics [q-bio.GN], 0210 nano-technology, Oxidative stress
Abstract

International audience; Silver nanoparticles are known to strongly affect biological systems, and numerous toxicological studies have investigated their effects. Most of these studies examine the effects immediately following acute exposure. In this work, we have conducted further investigation by studying not only the acute, post-exposure response, but also the cellular response after a 72 hour-recovery-phase post exposure. As a biological model we have used macrophages, which are very important cells with respect to their role in the immune response to particulate materials. To investigate the response of macrophages to nanoparticles and their recovery post exposure, we have used a combination of proteomics and targeted experiments. These experiments provided evidence that the cellular reaction to nanoparticles, including the reaction during the recovery phase, is a very active process involving massive energy consumption. Pathways such as the oxidative stress response, central and lipid metabolism, protein production and quality control are strongly modulated during the cellular response to nanoparticles, and restoration of basic cellular homeo-stasis occurs during the recovery period. However, some specialized macrophage functions, such as lipopolysaccharide-induced cytokine and nitric oxide production, did not return to their basal levels even 72 hours post exposure, showing that some effects of silver nanoparticles persist even after exposure has ceased.

Published
2019

14. Utility of macrophages in an antitumor strategy based on the vectorization of iron oxide nanoparticles

Author

Catherine Aude-Garcia, Solveig Reymond, Bastien Dalzon, Véronique Collin-Faure, Josiane Arnaud, Julien Vollaire, Thierry Rabilloud, Olivier Proux, Daphna Fenel, Mélanie Guidetti, Isabelle Testard, Marie Carrière, Denis Testemale, Guy Schoehn, Véronique Josserand, Protéomique, Métaux et Différenciation (ProMD ), Laboratoire de Chimie et Biologie des Métaux (LCBM - UMR 5249), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute for Advanced Biosciences / Institut pour l'Avancée des Biosciences (Grenoble) (IAB), Centre Hospitalier Universitaire [Grenoble] (CHU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Etablissement français du sang - Auvergne-Rhône-Alpes (EFS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Matériaux, Rayonnements, Structure (NEEL - MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Observatoire des Sciences de l'Univers de Grenoble (OSUG ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut national des sciences de l'Univers (INSU - CNRS)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de biologie structurale (IBS - UMR 5075 ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Biologie et de Pathologie [CHU Grenoble] (IBP), Chimie Interface Biologie pour l’Environnement, la Santé et la Toxicologie (CIBEST ), Rabilloud, Thierry, Protéomique, Métaux et Différenciation (ProMD), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institute for Advanced Biosciences (IAB), Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), MRS - Matériaux, Rayonnements, Structure, Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Rayonnement Synchrotron et Recherche Medicale (RSRM), Université Joseph Fourier - Grenoble 1 (UJF)-European Synchrotron Radiation Facility (ESRF)-Institut National de la Santé et de la Recherche Médicale (INSERM), équipe FAME, Observatoire des Sciences de l'Univers de Grenoble (OSUG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut de biologie structurale (IBS - UMR 5075), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), Institut de Biologie et de Pathologie - IBP [CHU Grenoble], Chimie Interface Biologie pour l’Environnement, la Santé et la Toxicologie (CIBEST), Institut d'oncologie/développement Albert Bonniot de Grenoble (INSERM U823), Université Joseph Fourier - Grenoble 1 (UJF)-CHU Grenoble-EFS-Institut National de la Santé et de la Recherche Médicale (INSERM), Platefome de Microscopie électronique IBS/ISBG, ANR-10-INSB-05-01,FRISBI,French Infrastructure for Integrated Structural Biology, ANR-10- LABX-49-01,Labex GRAL,Labex GRAL, Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Matériaux, Rayonnements, Structure (MRS), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Centre Hospitalier Universitaire [Grenoble] (CHU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Etablissement français du sang - Auvergne-Rhône-Alpes (EFS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut national de recherche en sciences et technologies pour l'environnement et l'agriculture (IRSTEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire Lésions des Acides Nucléiques (LAN), Service de Chimie Inorganique et Biologique (SCIB - UMR E3), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut Nanosciences et Cryogénie (INAC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
medicine.medical_treatment, Population, [SDV.CAN]Life Sciences [q-bio]/Cancer, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, [SDV.CAN] Life Sciences [q-bio]/Cancer, Cancer stem cell, medicine, General Materials Science, education, Intravascular injection, education.field_of_study, Cancer, [SDV.IMM.IMM]Life Sciences [q-bio]/Immunology/Immunotherapy, 021001 nanoscience & nanotechnology, medicine.disease, 0104 chemical sciences, Radiation therapy, [SDV.BBM.BS]Life Sciences [q-bio]/Biochemistry, Molecular Biology/Biomolecules [q-bio.BM], chemistry, Physical Barrier, Cancer cell, Cancer research, [SDV.IMM.IMM] Life Sciences [q-bio]/Immunology/Immunotherapy, 0210 nano-technology, Iron oxide nanoparticles
Abstract

International audience; Utility of macrophages in an antitumor strategy based on the vectorization of iron oxide nanoparticles This Trojan horse strategy aims at specifi cally killing tumor cells. To achieve this goal, High-Z-element nanoparticles brought by macrophages are stimulated using low doses of X-ray radiation. The nanoparticles (namely FERINJECT®) liberate toxic photoelectrons in situ without damaging the surrounding healthy tissues. With its specifi c targeting of cancer cells, this promising anticancer strategy could greatly improve the effi ciency of current radiotherapy. Many solid tumors and their metastases are still resistant to current cancer treatments such as chemo-and radiotherapy. The presence of a small population of Cancer Stem Cells in tumors is held responsible for relapses. Moreover, the various physical barriers of the organism (e.g. blood-brain barrier) prevent many drugs from reaching the target cells. In order to alleviate this constraint, we suggest a Trojan horse strategy consisting of intravascular injection of macrophages loaded with therapeutic nanoparticles (an iron nanoparticle-based solution marketed under the name of FERINJECT®) to bring a high quantity of the latter to the tumor. The aim of this article is to assess the response of primary macrophages to FERINJECT® via functional assays in order to ensure that the macrophages loaded with these nano-particles are still relevant for our strategy. Following this first step, we demonstrate that the loaded macro-phages injected into the bloodstream are able to migrate to the tumor site using small-animal imaging. Finally, using synchrotron radiation, we validate an improvement of the radiotherapeutic effect when FERINJECT®-laden macrophages are deposited at the vicinity of cancer cells and irradiated.

Published
2019

15. Highly sensitive olfactory biosensors for the detection of volatile organic compounds by surface plasmon resonance imaging

Author

Loïc Briand, Sophie Brenet, Emilie Barou, Charlotte Hurot, Arnaud Buhot, Christine Belloir, Yanxia Hou, Chimie pour la Reconnaissance et l’Etude d’Assemblages Biologiques (CREAB), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre des Sciences du Goût et de l'Alimentation [Dijon] (CSGA), Institut National de la Recherche Agronomique (INRA)-Université de Bourgogne (UB)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), SyMMES laboratory is part of Labex Arcane program (ANR-12-LABX-003) and Labex LANEF program (ANR-10-LABX-51- 01)., Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
volatile organic compound, Conformational change, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, Odorant binding, Biomedical Engineering, Biophysics, Biosensing Techniques, 02 engineering and technology, Receptors, Odorant, 01 natural sciences, Hexanal, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Electrochemistry, Animals, Volatile organic compound, ComputingMilieux_MISCELLANEOUS, Detection limit, chemistry.chemical_classification, Volatile Organic Compounds, Chromatography, Chemistry, 010401 analytical chemistry, General Medicine, Repeatability, Surface Plasmon Resonance, 021001 nanoscience & nanotechnology, Rats, 0104 chemical sciences, Smell, surface plasmon resonance imaging, ofactory biosensor, 0210 nano-technology, Selectivity, Biosensor, odorant binding proteins, Biotechnology
Abstract

International audience; Nowadays, monitoring of volatile organic compounds (VOCs) is very important in various domains. In this work, we aimed to develop sensitive olfactory biosensors using odorant binding proteins (OBPs) as sensing materials. Three rat OBP3 derivatives with customized binding properties were designed and immobilized on the same chip for the detection of VOCs in solution by surface plasmon resonance imaging (SPRi). We demonstrated that the proteins kept their binding properties after the immobilization under optimized conditions. The obtained olfactory biosensors exhibited very low limits of detection in both concentration (200pM of beta-ionone) and in molecular weight of VOCs (100g/mol for hexanal). Such a performance obtained with SPRi in solution is especially remarkable. We hypothesized that the binding of VOCs to the active sites of OBPs induced a local conformational change in the proteins. This change would give rise to a variation of refractive index, to which SPRi is extremely sensitive. In addition, the olfactory biosensors showed a high selectivity especially at relatively low VOC concentrations. With optimized regeneration procedures, they also showed very good repeatability not only from measurement to measurement but also from chip to chip with a lifespan up to almost two months. These olfactory biosensors are particularly interesting for trace detection of VOCs in solution.

Published
2019

16. a Method for Increasing Thermal Stability of Short-Living Solitons in Silicon Nitride Microresonators

Author

Camille Petit-Etienne, H. El Dirani, Marco Liscidini, Davide Grassani, Matteo Galli, Laurene Youssef, Daniele Bajoni, Federico Andrea Sabattoli, Sebastien Kerdiles, Erwine Pargon, Corrado Sciancalepore, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Clot, Marielle

Subjects
Materials science, Thermoelectric cooling, Silicon, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [PHYS] Physics [physics], 010309 optics, chemistry.chemical_compound, Fiber Bragg grating, 0103 physical sciences, Thermal stability, Nonlinear Sciences::Pattern Formation and Solitons, ComputingMilieux_MISCELLANEOUS, Thermal equilibrium, [PHYS]Physics [physics], business.industry, 021001 nanoscience & nanotechnology, chemistry, Silicon nitride, Mode-locking, Optoelectronics, Soliton, 0210 nano-technology, business
Abstract

We exploit orthogonally polarized resonant modes to achieve thermal equilibrium for Kerr soliton generation in Si3N4 microrings. The improved thermal stability allows for soliton mode-locking simply by slow wavelength tuning or thermoelectric cooling.

Published
2021

17. Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Author

Gauthier Lefevre, Nicolas Posseme, Taguhi Yeghoyan, Moustapha Jaffal, Christophe Vallée, M. Bonvalot, R. Gassilloud, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, 02 engineering and technology, Surfaces and Interfaces, Surface finish, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Kinetic energy, 01 natural sciences, Surfaces, Coatings and Films, Atomic layer deposition, Sputtering, Etching (microfabrication), 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Layer (electronics), Deposition (chemistry), ComputingMilieux_MISCELLANEOUS
Abstract

In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE). Quasi-ALE involves a fluorination treatment followed by a directional Ar+ sputtering step. We show that the fluorination treatment allows a significant decrease in the incident kinetic energy of the subsequent directional Ar+ sputtering step. Conversely, when no fluorination step is carried out, TSD requires high incident kinetic energies during the directional Ar+ sputtering step, which, in turn, leads to detrimental plasma-induced damage on horizontal surfaces, such as roughness, also promoting by-product redeposition. The benefits and shortcomings of these two TSD approaches—PEALD/quasi-ALE and PEALD/energetic Ar+ sputtering—are compared in light of potential bottom-up technological developments.

Published
2021

18. Lithographically Defined Cross-Linkable Top Coats for Nanomanufacturing with High-χ Block Copolymers

Author

Xavier Chevalier, Cindy Gomes Correia, Gwenaelle Pound-Lana, Philippe Bézard, Matthieu Sérégé, Camille Petit-Etienne, Guillaume Gay, Gilles Cunge, Benjamin Cabannes-Boué, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Marcus Müller, Georges Hadziioannou, Ilias Iliopoulos, Guillaume Fleury, Marc Zelsmann, Arkema (Arkema), Laboratoire de Chimie des Polymères Organiques (LCPO), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut für Theoretische Physik [Göttingen], Georg-August-University [Göttingen], Laboratoire Procédés et Ingénierie en Mécanique et Matériaux (PIMM), Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Georg-August-University = Georg-August-Universität Göttingen, Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Sciences et Technologies, and HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)

Subjects
Spatial positioning, Materials science, Lithography, Dewetting, Nanotechnology, Top-coat patterning, 02 engineering and technology, 010402 general chemistry, Sciences de l'ingénieur, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Cross-linkable top coats, [SPI]Engineering Sciences [physics], Nanomanufacturing, Perpendicular, Copolymer, General Materials Science, ComputingMilieux_MISCELLANEOUS, Nanopatterning, Self-assembly, 021001 nanoscience & nanotechnology, Block copolymers, 0104 chemical sciences, [CHIM.POLY]Chemical Sciences/Polymers, 0210 nano-technology, Layer (electronics), [PHYS.COND.CM-SCM]Physics [physics]/Condensed Matter [cond-mat]/Soft Condensed Matter [cond-mat.soft]
Abstract

International audience; The directed self-assembly (DSA) of block copolymers (BCPs) is a powerful method for the manufacture of high-resolution features. Critical issues remain to be addressed for successful implementation of DSA, such as dewetting and controlled orientation of BCP domains through physicochemical manipulations at the BCP interfaces, and the spatial positioning and registration of the BCP features. Here, we introduce novel top-coat (TC) materials designed to undergo cross-linking reactions triggered by thermal or photoactivation processes. The cross-linked TC layer with adjusted composition induces a mechanical confinement of the BCP layer, suppressing its dewetting while promoting perpendicular orientation of BCP domains. The selection of areas of interest with perpendicular features is performed directly on the patternable TC layer via a lithography step and leverages attractive integration pathways for the generation of locally controlled BCP patterns and nanostructured BCP multilayers.

Published
2021

19. Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission

Author

J. Moeyaert, Sylvain David, Névine Rochat, Mickael Martin, Christophe Jany, Marie-Leonor Touraton, Nicolas Bernier, Frederic Boeuf, Thierry Baron, Virginie Loup, Didier Dutartre, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Cathodoluminescence, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, Spectral line, Condensed Matter::Materials Science, 0103 physical sciences, Materials Chemistry, Wafer, Quantum well, 010302 applied physics, [PHYS]Physics [physics], business.industry, Metals and Alloys, Heterojunction, Surfaces and Interfaces, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Characterization (materials science), Optoelectronics, 0210 nano-technology, business
Abstract

Metal organic chemical vapor deposition of AlGaAs on GaAs on nominal 300 mm (001) Si was studied using selective epitaxial growth. Growth and structural characterization of AlGaAs layers formed on GaAs structures is presented. AlGaAs layers with different chemical compositions were fabricated on top of GaAs faceted structures. Energy Dispersive X-ray spectra were investigated to characterize the structure. It was found that the selective growth of AlGaAs structures for red optical emission needs careful temperature tuning. Indeed, AlGaAs layers show steep compositional variations depending on the crystallographic planes they are grown upon. Cathodoluminescence revealed that quantum well emission is best for the simpler rectangular shaped underlying GaAs structure. Thus, the obtained layers show that they could be excellent candidates for future red optical emitters directly integrated on a silicon wafer platform.

Published
2021

20. Top-coats for scalable nano-manufacturing with high-χ block copolymers in lithographic applications

Author

Chevalier, Xavier, Gomes correia, Cindy, POUND-LANA, Gwenaelle, Bézard, Philippe, SÉRÉGÉ, Matthieu, PETIT-ETIENNE, Camille, Gay, Guillaume, Cunge, Gilles, CABANNES-BOUÉ, Benjamin, Nicolet, Célia, Navarro, Christophe, Cayrefourcq, Ian, Müller, Marcus, Hadziioannou, Georges, Iliopoulos, Ilias, Fleury, Guillaume, Gomez Correia, Cindy, Zelsmann, M., Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie des Polymères Organiques (LCPO), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), and Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Planarity testing, chemistry, Stack (abstract data type), 0103 physical sciences, Scalability, Copolymer, Lamellar structure, 0210 nano-technology, Lithography, ComputingMilieux_MISCELLANEOUS, Nano manufacturing
Abstract

Results for the self-assembly of lamellar silicon-containing high-χ block copolymers (BCP) with innovative neutral top-coat design are presented. We demonstrate that these materials and associated processes are compatible with a standard lithographic process, and oriented toward a potential high volume manufacturing. We show that this dedicated technology is able to guarantee the stability and planarity of the stack even at elevated self-assembly bake temperatures, and opens new opportunity in the fields of 3D BCPs stacks. Finally, we show interesting results for the etch-transfer of a lamellar BCP in silicon.

Published
2021

21. Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO 2

Author

M. Bonvalot, Taguhi Yeghoyan, Christophe Vallée, Ahmad Chaker, Moustapha Jaffal, Ahmad Bsiesy, Samia Belahcen, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Surfaces and Interfaces, Substrate (electronics), Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Titanium nitride, Surfaces, Coatings and Films, chemistry.chemical_compound, Atomic layer deposition, chemistry, 0103 physical sciences, Thin film, Inductively coupled plasma, 0210 nano-technology, Tin, ComputingMilieux_MISCELLANEOUS
Abstract

Deposition of titanium nitride thin films by plasma enhanced atomic layer deposition has been realized on thermal silicon oxide substrates in an inductively coupled plasma reactor. The plasma step involves a H2 (40 sccm)/N2 (5 sccm)/Ar (10 sccm) gas mixture, and growth has been followed by in situ ellipsometric measurements. A tunable substrate bias voltage has been applied in the vicinity of the substrate to modulate plasma-ion energy and investigate its impact on the growth mechanism. We have observed that an increase in the applied bias power leads to a gradual TiN nucleation delay of up to 30 cycles at 80 W radio frequency bias power. An increase in the H2 content of the plasma gas mixture shows that hydrogen species from the plasma can significantly deactivate the SiO2 substrate, thanks to reduction reactions induced by H3+, Ar+, and ArH+ ions leading to the formation of Si–H surface bonds. A nitrogen-rich plasma gas mixture results in N atom incorporation on the substrate surface, which in turn favors subsequent TiN growth. The combination of hydrogen-rich plasma chemistry with a high applied substrate bias power leads to a TiN growth delay larger than 50 cycles. These results provide a valuable implementation for the development of area-selective deposition processes.

Published
2021

22. Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

Author

E. Eustache, Bassem Salem, M. A. Mahjoub, Youssouf Guerfi, Jean-Michel Hartmann, J. Aubin, S. David, Sébastien Labau, Franck Bassani, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Nanowire, plasma etching, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, XPS, Electrical and Electronic Engineering, Reactive-ion etching, Semiconductor Science and Technology germanium-tin nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Anisotropy, Hydrogen silsesquioxane, 010302 applied physics, Plasma etching, business.industry, germanium-tin nanowire, GAA-FET, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Field-effect transistor, Inductively coupled plasma, 0210 nano-technology, business
Abstract

We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been investigated and optimal conditions identified for GeSn 6% alloys. Then, plasma etching was optimized to etch high Sn content GeSn alloys (up to 15%) with a high anisotropy, smooth sidewalls and a high selectivity versus a hydrogen silsesquioxane hard mask. We have shown that, in order to obtain smooth surfaces after plasma etching, a HCl pre-treatment was mandatory to eliminate the native Sn and Ge oxides. This behavior was even more pronounced for high Sn contents. Finally, we succeeded in patterning 20 nm wide suspended beams from GeSn layers with Sn concentrations up to 15%.

Published
2021

23. Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology

Author

Thierry Baron, D. Deleruyelle, P.V. Guenery, Serge Blonkowski, Abdelkader Souifi, L. Militaru, J. Moeyaert, Khaled Ayadi, E. A. Leon Perez, Nicolas Baboux, INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Dispositifs Electroniques (INL - DE), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Oxide, chemistry.chemical_element, Nanoparticle, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Stack (abstract data type), 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Atomic force microscopy, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, chemistry, CMOS, Optoelectronics, 0210 nano-technology, business, Indium
Abstract

In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull selection of materials deposited by MOCVD and ALD. A detailed description of the process is provided together with AFM analysis performed on the indium oxide nanoparticles and TEM cross-sections on the whole stack. It is shown that the introduction of In2O3 NPs provides bipolar switching behavior together with promising electrical performances in terms of large OFF/ON resistance ratio (106) and retention time at room temperature.

Published
2021

24. Introducing a biomimetic coating for graphene neuroelectronics: toward in-vivo applications

Author

Polina Shkorbatova, Anne Briançon-Marjollet, Farida Veliev, Vincent Bouchiat, Grégoire Courtine, Anna Szarpak-Jankowska, Elodie Rey, Quentin Barraud, Cécile Delacour, Rachel Auzely, Marco Bonizzato, Renato Olarte-Hernandez, Antoine Bourrier, Delacour, Cécile, Thermodynamique et biophysique des petits systèmes (NEEL - TPS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Centre de Recherches sur les Macromolécules Végétales (CERMAV), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Center for Neuroprosthetics [Geneva] (CNP), Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de recherche en neurosciences de Lyon - Lyon Neuroscience Research Center (CRNL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Université Jean Monnet - Saint-Étienne (UJM)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Center for Neuroprosthetics and Brain Mind Institute, Hypoxie : Physiopathologie Respiratoire et Cardiovasculaire (HP2), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Grenoble Alpes (UGA), International Paraplegic Foundation chair in spinal cord Repair, Center for Neuroprosthetics and Brain Mind Institute, School of Life Sciences, Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Thermodynamique et biophysique des petits systèmes (TPS), Centre de recherche en neurosciences de Lyon (CRNL), Université de Lyon-Université de Lyon-Université Jean Monnet [Saint-Étienne] (UJM)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), School of Life Sciences, Swiss Federal Institute of Technology (EPFL), Systèmes hybrides de basse dimensionnalité (HYBRID), and ANR-18-CE42-0003,NanoMesh,Nanoelectronique graphene pour des interfaces neuronales multifonctionnelles(2018)

Subjects
Materials science, Biocompatibility, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], neurons, microelectrodes, Nanotechnology, 02 engineering and technology, engineering.material, bioelectronics, law.invention, 03 medical and health sciences, biocompatibility, conjugate, Coating, law, Monolayer, hyaluronic acid, Microelectronics, intracortical implant, General Nursing, ComputingMilieux_MISCELLANEOUS, 030304 developmental biology, surface functionalization, 0303 health sciences, carbon nanotubes, [PHYS.PHYS.PHYS-BIO-PH] Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], Graphene, business.industry, graphene, biomaterial, tissue, Adhesion, differentiation, 021001 nanoscience & nanotechnology, electrodes, outgrowth, engineering, Surface modification, Degradation (geology), functionalization, 0210 nano-technology, business, hyaluronic-acid hydrogels
Abstract

Electronic micro and nano-devices are suitable tools to monitor the activity of many individual neurons over mesoscale networks. However the inorganic materials currently used in microelectronics are barely accepted by neural cells and tissues, thus limiting both the sensor lifetime and efficiency. In particular, penetrating intracortical probes face high failure rate because of a wide immune response of cells and tissues. This adverse reaction called gliosis leads to the rejection of the implanted probe after few weeks and prevent long-lasting recordings of cortical neurons. Such acceptance issue impedes the realization of many neuro-rehabilitation projects. To overcome this, graphene and related carbon-based materials have attracted a lot of interest regarding their positive impact on the adhesion and regeneration of neurons, and their ability to provide high-sensitive electronic devices, such as graphene field effect transistor (G-FET). Such devices can also be implemented on numerous suitable substrates including soft substrates to match the mechanical compliance of cells and tissues, improving further the biocompatibility of the implants. Thus, using graphene as a coating and sensing device material could significantly enhance the acceptance of intracortical probes. However, such a thin monolayer of carbon atoms could be teared off during manipulation and insertion within the brain, and could also display degradation over time. In this work, we have investigated the ability to protect graphene with a natural, biocompatible and degradable polymeric film derivated from hyaluronic acid (HA). We demonstrate that HA-based coatings can be deposited over a wide range of substrates, including intracortical probes and graphene FET arrays without altering the underlying device material, its biocompatibility and sensitivity. Moreover, we show that this coating can be monitored in situ by quantifying the number of deposited charges with the G-FET arrays. The reported graphene functionalization offers promising alternatives for improving the acceptance of various neural interfaces.

Published
2021

25. Enhanced dielectric properties of epoxy-based photoresist nanocomposites using carbon-coated nickel nanoparticles for high voltage integrated capacitors

Author

Jean-Hervé Tortai, M. Goubet, C. Lapeyronie, M.S. Alfonso, Bernard Viala, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Permittivity, Materials science, Nano particles, Nanoparticle, 02 engineering and technology, Dielectric, Photoresist, Core-shell nanostructures, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Nano Composite, 010302 applied physics, Nanocomposite, Dielectric strength, Polymer-matrix composites, General Engineering, Percolation threshold, 021001 nanoscience & nanotechnology, Capacitor, Dielectric properties, Ceramics and Composites, 0210 nano-technology
Abstract

High-k nanocomposite photoresists are highly sought-after dielectric materials for the manufacturing and miniaturization of integrated capacitors. Herein, in-depth high voltage dielectric characterizations of Metal Polymer Composites (MPCs) having carbon-coated nickel nanoparticles (Ni@C) dispersed into epoxy-based photoresist (SU-8) are reported. The MPCs were fabricated using three-step formulation (deagglomeration, surface functionalization and dispersion in a polymeric matrix) involving simple sonochemical methods. Finally, films of MPCs were deposited on silicon wafers by spin-coating, and Metal-Insulator-Semiconductor (MIS) capacitors were fabricated. Formulations with increasing nanoparticles/polymer volume fractions were prepared in order to determine a previously unestablished percolation threshold with (Ni@C) nanoparticles. The experimental results were modeled using the generalized power-law equation of the percolation theory (PT) and were compared with effective medium approximation (EMA). An enhancement of the complex dielectric permittivity of ∼ 116% was detected keeping a reasonable value of losses of 0.32 at 5 kHz. However, no giant permittivity in vicinity of the percolation threshold was detected. The high-voltage dielectric properties showed the occurrence of two electron field emission mechanisms, but no electrical aging or dielectric breakdown below ±0.38 MV/cm occurred. This study shows a reliable wafer-scale film fabrication process of MPCs for the manufacturing of long-awaited miniaturization of high-voltage capacitors.

Published
2021

26. Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering

Author

A. Garraud, M. B. Hachemi, Bassem Salem, Vincent Consonni, Sébastien Labau, Skandar Basrour, Hervé Roussel, Ahmad Bsiesy, G. Lefevre, Circuits, Devices and System Integration (CDSI), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), and Circuits, Devices and System Integration (TIMA-CDSI)

Subjects
010302 applied physics, Materials science, Annealing (metallurgy), Physics, QC1-999, [INFO.INFO-OH]Computer Science [cs]/Other [cs.OH], Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, PACS 8542, X-ray photoelectron spectroscopy, chemistry, Sputtering, 0103 physical sciences, Orthorhombic crystal system, Thin film, 0210 nano-technology, Tin, Current density
Abstract

International audience; In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The structural analysis of the HZO thin films performed by in situ x-ray diffraction upon thermal annealing shows the formation of the HZO orthorhombic phase at annealing temperatures as low as 370 °C. X-ray photoelectron spectroscopy interestingly reveals an identical chemical composition of the deposited HZO thin films and the sputtered target, i.e., an Hf:Zr ratio of 1:1. The current–voltage characteristic of the TiN/HZO/TiN stack shows a current density of 10⁻⁵ A/cm² at an applied electric field of 1 MV/cm, which, being rather low, gives a strong indication of the good electrical quality of the HZO layer. Finally, a butterfly-like capacitance–voltage loop is obtained on the TiN/HZO/TiN stack, indicating a ferroelectric behavior of the HZO layer.

Published
2021

27. On‐Chip Optical Nano‐Tweezers for Culture‐Less Fast Bacterial Viability Assessment

Author

Pierre Marcoux, Emmanuel Picard, Emmanuel Hadji, Manon Tardif, Jean-Baptiste Jager, V. Gaude, David Peyrade, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Département Microtechnologies pour la Biologie et la Santé (DTBS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Optical Tweezers, 02 engineering and technology, Bacterial cell structure, law.invention, Biomaterials, Stress (mechanics), 03 medical and health sciences, law, Tweezers, Nano, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0303 health sciences, Microbial Viability, 030306 microbiology, business.industry, Resonance, General Chemistry, 021001 nanoscience & nanotechnology, Laser, [SDV.MP.BAC]Life Sciences [q-bio]/Microbiology and Parasitology/Bacteriology, Optical tweezers, Optoelectronics, 0210 nano-technology, business, Bacterial Viability, Biotechnology
Abstract

International audience; Because of antibiotics misuse, the dramatic growth of antibioresistance threatens public health. Tests are indeed culture-based, and require therefore one to two days. This long time-to-result implies the use of large-spectrum antibiotherapies as a first step, in absence of pathogen characterization. Here, a breakthrough approach for a culture-less fast assessment of bacterial response to stress is proposed. It is based on non-destructive on-chip optical tweezing. A laser loads an optical nanobeam cavity whose evanescent part of the resonant field acts as a nano-tweezer for bacteria surrounding the cavity. Once optically trapped, the bacterium-nanobeam cavity interaction induces a shift of the resonance driven by the bacterial cell wall optical index. The analysis of the wavelength shift yields an assessment of viability upon stress at the single-cell scale. As a proof of concept, bacteria are stressed by incursion, before optical trapping, at different temperatures (45, 51, and 70 °C). Optical index changes correlate with the degree of thermal stress allowing to sort viable and dead bacteria. With this disruptive diagnosis method, bacterial viability upon stress is probed much faster (typically less than 4 h) than with conventional culture-based enumeration methods (24 h).

Published
2021

28. O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Author

Denis Morris, Mickael Martin, Abdelkader Souifi, Jean-Michel Hartmann, Hussein Mehdi, Abdelaziz Ahaitouf, Thierry Baron, Nicolas Chauvin, J. Moeyaert, Bouraoui Ilahi, Bassem Salem, Ali Ahaitouf, Sylvain David, Oumaima Abouzaid, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), SIGER Laboratory, Faculty of Sciences and Technology, Université Sidi Mohammed Ben Abdellah, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Faculté Polydisciplinaire Taza, Université Sidi Mohammed Ben Abdellah, Université Sidi Mohamed Ben Abdellah (USMBA), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
Materials science, Photoluminescence, Silicon, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, semiconductor III-V, Article, [SPI.MAT]Engineering Sciences [physics]/Materials, lcsh:Chemistry, 0103 physical sciences, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Quantum Dots (QDs), Quantum Dots (QDs), semiconductor III-V, Semiconductor, lcsh:QD1-999, chemistry, Metal Organic Chemical Vapor Deposition (MOCVD), Quantum dot, Optoelectronics, 0210 nano-technology, business
Abstract

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level &micro, PL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 &plusmn, 0.04 &micro, m at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 &mu, m emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Published
2020

29. Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Author

Baron, Thierry, Zhou, Taojie, Tang, Mingchu, Xiang, Guohong, Xiang, Boyuan, Hark, Suikong, Martin, Mickael, Pan, Shujie, Park, Jae-Seong, Liu, Zizhuo, Chen, Siming, Zhang, Zhaoyu, Liu, Huiyun, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Physics::Instrumentation and Detectors, Science, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, General Biochemistry, Genetics and Molecular Biology, Article, Semiconductor laser theory, law.invention, 010309 optics, Photonic crystals, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Lasers, LEDs and light sources, Spontaneous emission, lcsh:Science, ComputingMilieux_MISCELLANEOUS, Photonic crystal, Semiconductor lasers, [PHYS]Physics [physics], Multidisciplinary, business.industry, Quantum dots, Photonic integrated circuit, General Chemistry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Semiconductor, Quantum dot, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, lcsh:Q, Photonics, 0210 nano-technology, business
Abstract

Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits., Fabricating semiconductor photonic lasers based on III-V materials are challenging because of the material mismatch with silicon. Here the authors monolithically grow quantum-dot-based photonic crystal membrane lasers directly on an on-axis silicon substrate.

Published
2020

30. Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks

Author

Mireille Mouis, Céline Ternon, Thibauld Cazimajou, T. Arjmand, Thi Thu Thuy Nguyen, Bassem Salem, Maxime Legallais, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), and European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)

Subjects
Materials science, Silicon, Nanowire, General Physics and Astronomy, Field effect, chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, law.invention, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Subthreshold slope, Semiconductor, Polycrystalline silicon, chemistry, Percolation, engineering, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; In this paper, we highlight the key role played by Si nanowire/nanowire junctions in the electrical performance of field-effect transistors (FETs) based on percolating Si nanowire (SiNW) networks, also called nanonets. Using our original technological process to fabricate simultaneously numerous silicon nanonetbased transistors with variable geometry, we thoroughly investigated in this paper their electrical properties for various channel lengths, from 5 to 100µm. Particularly, we evidenced a clear transition in the FET performance, when NW/NW junctions are involved in the conduction path. On one hand, for channel length shorter than that of nanowires (NWs), the devices are called Multiple-Parallel-Channel FETs (MPC-FETs) as NWs directly bridge the channel, and they exhibit poor electrical performance in terms of OFF current, ONto-OFF ratio and subthreshold slope. On the other hand, for channel length longer than that of nanowires (NWs), the devices are called Nanonet-FETs (NN-FETs) as the current flows through percolating paths made of NWs and NW/NW junctions and the performance are considerably enhanced. By combining our structural knowledge of the material with experimental observations of electrical properties and modelling results, by relying on the percolation theory, the model for electrical transport in polycrystalline silicon and the principle of potential barrier lowering by field effect, we propose the Junction Driven Percolation mechanism. It explains the role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating nanowire network and how they drastically enhanced the electrical properties of nanowire-based field-effect transistors despite the disorder introduced by the increasing number of nanowires. As a consequence, by controlling properly the junction interfaces and device geometry for a given NW density, thanks to NW/NW junctions, the NN-based devices are a valuable and promising alternative to improve the electrical performances of NW-based devices for future developments.

Published
2020

31. Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films

Author

Joao Resende, Jean-Hervé Tortai, Delphine Le Cunff, Bernard Pelissier, David Fuard, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Materials science, business.industry, Band gap, 02 engineering and technology, Dielectric, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Threshold energy, 01 natural sciences, 0104 chemical sciences, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, Ellipsometry, Extinction (optical mineralogy), Optoelectronics, General Materials Science, Thin film, 0210 nano-technology, business, Refractive index
Abstract

1. Abstract In this study, we first compare the bandgap determination methods in SiON thin films using two established techniques: Ellipsometry and the Energy Loss Spectrum from X-ray Photoelectron Spectroscopy. In the ellipsometry case, we modelled the optical properties using a single Tauc-Lorentz oscillator model, in a range from 1.5 to 6 eV, while for the XPS case, we used the threshold energy of the Energy Loss Spectrum from the O1s and N1s main core levels to determine the bandgap. We observed a consistent difference of the energy bandgap values obtained between the two methods, reaching up to 1.6 eV. Therefore, we combined the ellipsometry and Energy Loss Spectrum from XPS measurements, creating a hybrid metrology method using a triple Tauc-Lorentz oscillator model. This methodology respected the optical relations of each technique and the complex dielectric constant of the material, creating an overlap of the two measurements between 3.5 and 6 eV. The combination method brings the advantage of a more robust determination of the bandgap in the SiO2–Si3N4 system, while creating a way to measure the refractive index and coefficient of extinction for intermixed thin films of SiON, from 1.5 up to 30 eV.

Published
2020

32. Correlations between first-principles calculations and electric properties of HfO 2 :Al 2 O 3 alloys for metal–insulator–metal (MIM) capacitor applications

Author

O. Khaldi, Patrice Gonon, Fathi Jomni, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Valence (chemistry), Materials science, Condensed matter physics, Band gap, Doping, General Physics and Astronomy, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Dielectric spectroscopy, Capacitor, law, 0103 physical sciences, Density functional theory, 0210 nano-technology, Current density
Abstract

The electronic structure and optical properties of monoclinic HfO2 (m-HfO2) and HfO2:Al2O3 alloys, from the density functional theory (DFT), are investigated. The calculated lattice parameters and optical properties of m-HfO2 are consistent with the experimental data. Upon alloying with Al2O3 (more than 25%), we observe that the bandgap of Hf-aluminate (HfAlO) increases. Moreover, some doping states in the top and bottom valence bands are induced, which enhance the visible absorption of HfO2. From the impedance spectroscopy analysis, it is observed that 90% of the Al2O3 content in HfO2 induces a reduction of oxygen vacancies (and ac conductivity) as well as an increase in the dielectric constant as compared to pure HfO2. In addition, from the J–V and C–V variations, both current density and capacitance voltage nonlinearities are reduced. The conduction mechanisms of HfO2 and HfAlO dielectrics are systematically investigated. According to the J–E plots, parameters like the optical dielectric constant and the effective barrier height are extracted. Results are consistent with the DFT calculations and show that the Hf0.1Al0.9O device may constitute a potential candidate for metal–insulator–metal capacitor applications.

Published
2020

33. Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching

Author

Daniel Araujo, Jean-Pierre Landesman, Marina Gutierrez, Df Reyes, Erwine Pargon, Universidad de Cádiz (UCA), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), TEC2017-86347-C2-1-R, Ministerio de Economía y Competitividad, H2020-LCE-2014-1.640947, Horizon 2020 Framework Programme, Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Université Bretagne Loire (UBL)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Fabrication, Materials science, HR-STEM images, 02 engineering and technology, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Scanning transmission electron microscopy, Materials Chemistry, Hardware_INTEGRATEDCIRCUITS, Microelectronics, Electrical and Electronic Engineering, quantitative strain analysis, Hardware_REGISTER-TRANSFER-LEVELIMPLEMENTATION, Deposition (law), 010302 applied physics, [PHYS]Physics [physics], business.industry, technology, industry, and agriculture, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, SiN x patterns, Optoelectronics, InP etch, Dry etching, Inductively coupled plasma, 0210 nano-technology, business, Electron-beam lithography, e-beam lithography
Abstract

International audience; Microelectronic processing to fabricate electronic devices on Si has been extensively studied and well characterized for several decades. This type of processing has been extrapolated for the fabrication of devices on other semiconducting materials such as group III–V materials, SiGe and SiC. However, the structural damage and its functional implication are still not fully understood for sensitive materials like InP. The present work investigates the lattice strain induced by the inductively coupled plasma dry etching process on InP stripes fabricated after masking the stripes with plasma-enhanced chemical vapor deposition-grown SiNx. High-resolution scanning transmission electron microscopy observations allowed us to deduce the strain at different locations in the fabricated stripes. Local strains in the range of 10−3 are observed, which should strongly modify the material carrier behaviour.

Published
2020

34. Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Author

Céline Ternon, Valérie Stambouli, Fanny Morisot, Ganesh Jayakumar, Nicolas Spinelli, Mireille Mouis, Christoforos G. Theodorou, Laetitia Rapenne, Per-Erik Hellström, X. Mescot, Bassem Salem, Monica Vallejo-Perez, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Royal Institute of Technology [Stockholm] (KTH ), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)

Subjects
Materials science, GOPS-based functionalization, General Chemical Engineering, Aptamer, Nanowire, nanonet, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Article, lcsh:Chemistry, Thrombin, Scanning transmission electron microscopy, Fluorescence microscope, medicine, field effect transistors, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, UV-assisted functionalization, ComputingMilieux_MISCELLANEOUS, 021001 nanoscience & nanotechnology, Grafting, 0104 chemical sciences, silicon nanowires, lcsh:QD1-999, Surface modification, Field-effect transistor, 0210 nano-technology, aptamer grafting, medicine.drug
Abstract

Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA&ndash, 15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN&ndash, FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA&ndash, 15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA&ndash, 15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN&ndash, FETs obtained after the TBA&ndash, 15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices.

Published
2020

35. Compact soliton generation based on the butt-coupling between a Si3N4 microresonator and a DFB laser

Author

Alexandre Larrue, Camille Petit-Etienne, Sebastien Kerdiles, H. El Dirani, E. Vinet, Yannick Robert, Erwine Pargon, Marc Vallet, Sylvain Boust, F. van Dijk, Laurene Youssef, Francois Duport, Corrado Sciancalepore, Alcatel-Thales III-V Lab (III-V Lab), THALES [France], Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), THALES, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
Physics, Distributed feedback laser, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Butt coupling, business.industry, Soliton (optics), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

We exhibit the generation of soliton microcombs with 1.48-THz line spacing over 8.8 THz around 1575 nm by using the self-injection locking of a III-V DFB laser butt-coupled to a Si3N4 microresonator.

Published
2020

36. Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

Author

Nader Sadeghi, Robert Soriano, Gilles Cunge, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

Subjects
inorganic chemicals, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Absorption spectroscopy, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Dissociation (chemistry), Surfaces, Coatings and Films, Volumetric flow rate, Delocalized electron, [SPI]Engineering Sciences [physics], 0103 physical sciences, Capacitively coupled plasma, Emission spectrum, 0210 nano-technology, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Vacuum ultraviolet-absorption spectroscopy (AS) and emission spectroscopy (ES) from delocalized probe plasma are implemented in the downstream chamber of a soft-etch industrial plasma reactor. A capacitively coupled plasma plasma, running in the upper compartment in He/NF$_3$/NH$_3$/H$_2$ mixtures at about 1 Torr, produces reactive species which flow through a shower head into a downstream chamber, where they can etch different μ-electronic materials: Si, SiO$_2$, SiN, etc. The ES reveals the presence of F atoms, while the dissociation rates of NF$_3$ and NH$_3$ are deduced from the AS, as well as the density of HF molecules, produced by chemical chain-reactions between dissociation products of NF$_3$, NH$_3$, and H$_2$. The variations of HF density as a function of the NH$_3$ flow rate suggest the possible formation of NH$_4$F molecules in the plasma

Published
2020

37. Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Author

Merwan Mokhtari, Daniel T. Cassidy, Alain Moréac, Solène Gérard, Marc Fouchier, Christophe Levallois, Brahim Ahammou, Philippe Pagnod-Rossiaux, Erwine Pargon, Jean-Pierre Landesman, François Laruelle, Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), 3SP Technologies, McMaster University [Hamilton, Ontario], Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Université Bretagne Loire (UBL)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Silicon nitride, Materials science, Photoluminescence, Edge relaxation, Mechanical stress, 02 engineering and technology, Dielectric, 01 natural sciences, Stress (mechanics), 0103 physical sciences, Dielectric thin film, Materials Chemistry, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Anisotropy, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed matter physics, Isotropy, Metals and Alloys, Infinitesimal strain theory, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Edge force, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Anisotropic strain, Degree of polarization, 0210 nano-technology
Abstract

International audience; We measured the details of the strain/stress fields produced in GaAs(100) and InP(100) substrates by the presence of narrow dielectric stripes processed from thin films obtained by plasma-enhanced chemical vapor deposition with a residual and controlled built-in compressive or tensile stress. Micro-photoluminescence techniques were used, measuring either the spectral shift of the luminescence peak or the degree of polarization (DOP) of the spectrally integrated signal. These techniques provide additional information on the different parts of the strain tensor (isotropic and anisotropic). The anisotropic deformation was found to change with the magnitude and sign of the initial builtin stress, and also with the stripe width. Using an analytical model, we were able to determine accurately several physical parameters which describe the stress/strain situation. The localized stress at the edges, expressed within the edge force concept, is shown to follow the expected initial built-in stress and also a stress reduction when the stripe width is decreased. This is interpreted as an evidence of some strain relaxation occuring near the stripe edges. This relaxation also impacts the shape of the DOP curves near the edges. The other important conclusion is the observation that the strain does not return to an isotropic situation (as in the case of an infinite thin film) in the central part of the stripes, even if the widths of these stripes are large (100 µm). The analytical model is developped and explained step by step. This analytical model produces quantitative data that describe the different effects observed. These data can be very helpful in the design and optimization of photonic devices when the photo-elastic effect can be significant, such as waveguides. The µPL measurements coupled with the model can also provide feedback to allow better control of the process conditions of such thin film devices.

Published
2020

38. Unconventional triple junction solar cells based on micro technologies

Author

Mathieu de Lafontaine, Laurent Bechou, Gwenaëlle Hamon, Maxime Darnon, Vincent Aimez, Pierre Albert, Abdelatif Jaouad, Erwine Pargon, Olivier Richard, Maite Volatier, Xavier Mackre Delannoy, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, IEEE, Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, chemistry.chemical_element, Germanium, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Redistribution layer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Common emitter, 010302 applied physics, Plasma etching, integumentary system, business.industry, Triple junction, technology, industry, and agriculture, food and beverages, Plasma, 021001 nanoscience & nanotechnology, chemistry, Optoelectronics, 0210 nano-technology, business, Microfabrication
Abstract

Triple junction solar cells are the heart of concentrated photovoltaic systems. We present here microfabrication processes that are especially developed to enable advanced triple junction solar cells structures that have a potential of improvement of the CPV competitivity. Plasma etching processes and redistribution layer fabrication methods are reported and applied to fabricate solar cells with base and emitter contacts both on the front side or both on the rear side of the cells.

Published
2020

39. Fabrication of a Multiple Heater-Sensor Platform for Cell Temperature Monitoring

Author

Alexandra Garraud, David Peyrade, Skandar Basrour, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Circuits, Devices and System Integration (CDSI), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE, and Circuits, Devices and System Integration (TIMA-CDSI)

Subjects
[PHYS]Physics [physics], 0303 health sciences, Temperature monitoring, Materials science, Fabrication, Micro particles, business.industry, Infrared, 02 engineering and technology, 021001 nanoscience & nanotechnology, 03 medical and health sciences, Optical imaging, Live cell imaging, Thermography, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, 030304 developmental biology, Microfabrication
Abstract

In this paper, we present the early-stage development of a transparent device capable of maintaining the temperature of the cells of four parallel cultures. The temperature of the cells is regulated while live imaging the active area. Temperature distribution is first determined through numerical analysis and later, validated by infrared thermography. The four heater-sensor platform is fabricated using microfabrication techniques followed by an electrical characterization. The nominal set of parameters is determined. Lensfree optical imaging is performed while the system is regulating at 37 °C and 100 µm diameter micro particles can be detected on the surface.

Published
2020

40. Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Author

Hervé Roussel, Carmen Jiménez, Youssouf Guerfi, Eirini Sarigiannidou, Franck Bassani, Fabrice Donatini, X. Mescot, Vincent Consonni, Bassem Salem, Quang Chieu Bui, Gustavo Ardila, Odette Chaix-Pluchery, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Optique & Microscopies (NEEL - POM), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes [2020-....] (UGA [2020-....])-Université Grenoble Alpes [2020-....] (UGA [2020-....]), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes [2020-....] (UGA [2020-....])-Université Grenoble Alpes [2020-....] (UGA [2020-....])-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2020-....] (UGA [2020-....]), Laboratoire des matériaux et du génie physique [2020-....] (LMGP [2020-....]), Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology [2020-....] (Grenoble INP [2020-....]), Institut polytechnique de Grenoble - Grenoble Institute of Technology [2020-....] (Grenoble INP [2020-....]), and Optique et microscopies (POM)

Subjects
010302 applied physics, Materials science, Silicon, Polarity (physics), business.industry, Nanowire, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, Piezoresponse force microscopy, chemistry, 0103 physical sciences, Optoelectronics, General Materials Science, Texture (crystalline), Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

ZnO thin films and nanostructures have received increasing interest in the field of piezoelectricity over the last decade, but their formation mechanisms on silicon when using pulsed-liquid injection metal–organic chemical vapor deposition (PLI-MOCVD) are still open to a large extent. Also, the effects of their morphology, dimensions, polarity, and electrical properties on their piezoelectric properties have not been completely decoupled yet. By only tuning the growth temperature from 400 to 750 °C while fixing the other growth conditions, the morphology transition of ZnO deposits on silicon from stacked thin films to nanowires through columnar thin films is shown. A detailed analysis of their formation mechanisms is further provided. The present transition is associated with strong enhancement of their crystallinity and growth texture along the c-axis together with a massive relaxation of the strain in nanowires. It is also related to a prevailed zinc polarity, for which its uniformity is strongly improved in nanowires. The nucleation of basal-plane stacking faults of I1-type in nanowires is also revealed and related to an emission line at about 3.326 eV in cathodoluminescence spectra, further exhibiting fairly low phonon coupling. Interestingly, the transition is additionally associated with a significant improvement of the piezoelectric amplitude, as determined by piezoresponse force microscopy measurements. The Zn-polar domains exhibit a larger piezoelectric amplitude than the O-polar domains, showing the importance of controlling the polarity in these deposits as a prerequisite to enhance the performances of piezoelectric devices. The present findings demonstrate the high potential in using the PLI-MOCVD system to form ZnO with different morphologies and polarity uniformity on silicon. They further reveal unambiguously the superiority of nanowires over thin films for piezoelectric devices.

Published
2020

41. Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite

Author

Woojin Jeon, Cheol Seong Hwang, Minsung Kim, Youngjin Kim, Jong Hyuk Park, Sang Soo Lee, Laboratoire des matériaux et du génie physique (LMGP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'Énergie Atomique et aux Énergies Alternatives (CEA) - Grenoble-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Seoul National University [Seoul] (SNU), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, business.industry, Composite number, Nanowire, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, 0104 chemical sciences, Electric field, Electrode, Optoelectronics, General Materials Science, Resilience (materials science), Deformation (engineering), 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

A core-shell nanowire-embedded composite formulation, exhibiting exquisite resistance switching behavior at quite low operating voltage (∼0.1 V) and extremely sustained switching behavior even under repeated mechanical deformation, has been developed for the application of a non-volatile memory device. This structure is based on a simple spin-casted composite comprising a stochastic distribution of Ag/TiO2 core-shell nanowires deploying resistance switching behavior, and poly(vinyl alcohol) (PVA) as a dielectric matrix. The Ag/TiO2 core-shell architecture of the one-dimensional (1D) resistance switching fillers (RSFs) and their distribution on a two-dimensional electrode surface were both designed to confine the electric field to the contact points between the RSFs and electrodes, imparting facile filamentary conduction in a highly confined region. These structural features render the switching behavior highly sustainable against mechanical stress and electrical noise; consequently, a notable switching operation, including a quite narrow variation of switching parameters, and very low operating voltages (Vset ∼ 0.098 ± 0.011 V, and Vreset ∼ −0.102 ± 0.013 V) were all successfully obtained for up to ∼50,000 mechanical deformation cycles. The resistance switching memory employing the core-shell nanowire-embedded composite formulation is highly promising for applications in which mechanical resilience, transparency, device lifetime, and power conservation are crucial, such as wearable electronics.

Published
2020

42. Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Author

Taguhi Yeghoyan, Samia Belahcen, Moustapha Jaffal, Ahmad Bsiesy, Agnès Granier, Nicolas Posseme, Rémi Vallat, R. Gassilloud, M. Bonvalot, Christophe Vallée, Gautier Lefèvre, Sylvain David, Ahmad Chaker, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université de Tsukuba = University of Tsukuba, University of Manchester [Manchester], Photon Science Institute [Manchester] (PSI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Plasma etching, 02 engineering and technology, Surfaces and Interfaces, Plasma, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Ion, Atomic layer deposition, Plasma-enhanced chemical vapor deposition, Chemical physics, Sputtering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Thin film, 0210 nano-technology, Plasma processing, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper, the emerging role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John Coburn, who studied the role of ionic species in plasma etching processes forty years ago. It is shown that, in both plasma enhanced chemical vapor deposition and plasma enhanced atomic layer deposition processes, plasma ions can play a major role in tuning a wide range of physical properties of thin films. In both processes, the possibility of extracting plasma ions with a tunable incident kinetic energy driven on the substrate surface is shown to provide a valuable additional degree of freedom in plasma processing. While a too large incident kinetic energy of plasma ions may have damaging effects linked to surface sputtering and atomic peening, a relatively low energy ion bombardment ensures a substantial improvement of thin film purity and the effective tuning of their microstructural properties. This phenomenon is attributed to the synergetic effect boosting momentum transfer and chemical reactivity among radicals and ionic plasma species, which, in turn, modulates plasma-surface interactions. Taking advantage of these tunable physical properties opens up the way to a large array of pathways for selective deposition processes in both 2D and 3D nanoscale microstructures.

Published
2020

43. Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates

Author

Sylvain David, Jean Decobert, Nicolas Vaissiere, Delphine Néel, Cecilia Dupre, Frank Fournel, Claire Besancon, Christophe Jany, Dalila Make, Franck Bassani, Thierry Baron, Giancarlo Cerulo, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), and THALES-ALCATEL

Subjects
[PHYS]Physics [physics], Threshold current, Fabrication, Materials science, Laser diode, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, 010309 optics, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Lasing threshold, ComputingMilieux_MISCELLANEOUS
Abstract

In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Based on these structures, the fabrication process of Fabry-Perot broad lasers is presented. Device performance is compared to the ones obtained from the same growth run on an InP substrate as a reference. High electrical properties of the n and p contacts are demonstrated. Lasing operation in the pulse regime is shown up to 50°C. Threshold current densities as low as 0.4 kA/cm 2 at 20°C are obtained for the laser on InPoSi, comparable to the ones obtained for the reference on InP substrate.

Published
2020

44. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Author

Loic Sanchez, Thierry Baron, S. David, V Muffato, Franck Bassani, Frank Fournel, Christophe Jany, C Besancon, Jean Decobert, J-P Le Goec, Cecilia Dupre, Nicolas Vaissiere, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), THALES [France], THALES [France]-ALCATEL, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)

Subjects
Materials science, Silicon, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Direct bonding, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Silicon photonics, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Outgassing, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business
Abstract

Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding. This can be seen as a huge limitation as compared to the III-V on III-V wafer mature technology where multi-regrowth steps are most often implemented. In this work, we have studied the material behavior of an InP membrane on silicon (InPoSi) under epitaxial regrowth conditions by metal-organic vapor phase epitaxy (MOVPE). MOVPE requires high-temperature elevation, typically above 600 °C. We show for the first time the appearance of voids at 400 °C in an InP seed (100 nm) directly-bonded onto a thermally oxidized Si substrate despite the use of a thick SiO2 oxide (200 nm) at the bonding interface. This phenomenon is explained by a weakening of the bonding interface while high-pressurized hydrogen is present. A kinetic study of the hydrogen lateral diffusion is carried out, enabling the assessment of its lateral diffusion length. To overcome the void formation, highly efficient outgassing trenches after bonding are demonstrated. Finally, high-quality AlGaInAs-based multi-quantum well (MQW) heterostructure surrounded by two InP layers was grown by MOVPE on InPoSi template patterned with outgassing trenches. This process is not only compatible with MOVPE regrowth conditions (650 °C under PH3) but also with conventional fabrication processes used for photonic devices.

Published
2020

45. Cleaning chamber walls after ITO plasma etching process

Author

Pascal Gouraud, Salma Younesy, Gilles Cunge, Sébastien Barnola, Camille Petit-Etienne, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Plasma etching, Materials science, business.industry, chemistry.chemical_element, BCL3, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Ion, Indium tin oxide, chemistry, 0103 physical sciences, Optoelectronics, Inductively coupled plasma, 0210 nano-technology, business, Volatility (chemistry), Indium, ComputingMilieux_MISCELLANEOUS
Abstract

The integration of new materials in the next generation of optoelectronic devices leads to several challenges. For instance, the etching of indium tin oxide (ITO, In2O3:Sn) faces the issue of the low volatility of In- and Sn-based etch products at room temperature. This is challenging for the etching process itself, but even more problematic when the inductively coupled plasma (ICP) reactor must be cleaned after etching: since the reactor walls are bombarded by low energy ions only, the removal of In- and Sn-based products redeposited on the walls can be very long and laborious. Therefore, we have investigated several plasma chemistries to find the most efficient reactor cleaning process suitable for ITO plasma etching. The results show that after ITO plasma etching the walls are indeed contaminated by indium. At the low temperature at which the reactor walls are regulated, BCl3/Cl2 cleaning plasma is ineffective to remove this deposit while HBr and CH4/Cl2 chemistries provide promising results.

Published
2020

46. A fabrication process for self-connected horizontal SiGe nanowires

Author

Dominique Drouin, M. Merhej, Serge Ecoffey, Thierry Baron, B. Lee Sang, Sylvain David, Benattou Sadani, Bassem Salem, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université de Sherbrooke (UdeS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Fabrication, Vapor-liquid-solid (VLS) growth, Nanowire, Oxide, 02 engineering and technology, Chemical vapor deposition, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Planar, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Horizontal growth, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nanotrenches, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Silicon-germanium, chemistry, Electrode, Silicon germanium nanowire (SiGe NW), Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; We present in this paper a low thermal budget process for self-connecting horizontal silicon-germanium nanowires. The guided nanowires on amorphous oxide layer have been elaborated by a chemical vapor deposition (CVD), using vapor-liquid-solid (VLS) mechanism, via a gold catalyst. We have optimized the growth parameters on reference samples with pre-patterned electrodes on SiO 2 /Si substrate. To control and eliminate the random growth of horizontal NWs, we have developed a technological process to guide these nanowires in nanotrenches created in the oxide to locate gold catalysts and confine planar growth. The silicon germanium nanowire (SiGe NW) connected the predefined electrodes showed an electrical behavior of an intrinsic SiGe NW.

Published
2020

47. Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate

Author

Céline Ternon, Maxime Legallais, T. Arjmand, Thibault Haffner, Bassem Salem, M Bawedin, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)

Subjects
Materials science, Fabrication, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Omega, law.invention, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Silicon nanowires, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Transistor, Process (computing), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Polyamide, Optoelectronics, Field-effect transistor, 0210 nano-technology, business
Abstract

International audience

Published
2020

48. In Situ Ellipsometry Study of the Early Stage of ZnO Atomic Layer Deposition on In 0.53 Ga 0.47 As

Author

Jean-Luc Deschanvres, Evgeniy V. Skopin, Hubert Renevier, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and ANR-18-CE09-0031,ULTiMeD,Contrôle à l'échelle atomique de couches ultra minces de dichalcogènures de métaux de transition par voie de dépôts de couches moléculaires (ALD/MLD)(2018)

Subjects
In situ, substrate inhibited growth of type II, Materials science, InGaAs, Nucleation, Analytical chemistry, 02 engineering and technology, Substrate (electronics), initial growth, 01 natural sciences, Atomic layer deposition, Ellipsometry, growth delay, 0103 physical sciences, Materials Chemistry, Growth rate, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Surfaces and Interfaces, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Atomic Layer Deposition, oxides, ZnO, Spectroscopic ellipsometry, Growth delay, 0210 nano-technology, ellipsometry
Abstract

International audience; We report on the initial stages of ZnO Atomic Layer Deposition (ALD) on In 0.53 Ga 0.47 As (InGaAs), studied by monitoring the ZnO film thickness in situ with spectroscopic ellipsometry. Using diethylzinc (DEZn) and water, at a substrate temperature equal to 120 • C, we found the presence of two different ZnO growth regimes prior to the steady growth: a slow ZnO nucleation on InGaAs, 0.005 nm.cy −1 (growth delay), then a substrate inhibited growth of type II. Increasing the DEZn injection time, the growth delay shortened from 30 cycles down to 3 cycles, concomitantly the steady growth rate increased from 0.18 to 0.23 nm.cy −1. The DEZn residence time and pressure increase during the first ALD cycle, allowing to suppress the growth delay, instead, no change is observed when performing the same experiment with water. Atomic Force Microscopy (AFM) images showed that the InGaAs surface roughened after the first cycle with a long DEZn pulse and residence time. The rough surface is likely at the origin of the growth delay elimination.

Published
2020

49. Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Author

Huiyun Liu, Mingchu Tang, Ian H. White, Richard V. Penty, Zizhuo Liu, Constanze Hantschmann, Siming Chen, Jae Seong Park, Mickael Martin, Thierry Baron, Ying Lu, Mengya Liao, Alwyn J. Seeds, Shujie Pan, Richard Beanland, Ana M. Sanchez, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Chen, S [0000-0002-4361-0664], Seeds, A [0000-0002-5228-627X], Penty, R [0000-0003-4605-1455], Liu, H [0000-0002-7654-8553], Hantschmann, C [0000-0002-8755-596X], Tang, M [0000-0001-6626-3389], Park, JS [0000-0002-6486-2342], Liao, M [0000-0002-5240-378X], and Apollo - University of Cambridge Repository

Subjects
Silicon, Materials science, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, Gallium arsenide, chemistry.chemical_compound, law, 0103 physical sciences, Laser theory, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Temperature measurement, Substrates, silicon photonics, business.industry, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, semiconductor growth, chemistry, Quantum dot laser, Quantum dot, Optoelectronics, Indium arsenide, Quantum dot lasers, 0210 nano-technology, business, Lasing threshold
Abstract

© 1983-2012 IEEE. High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been demonstrated as a promising solution to realize Si-based laser sources with very low threshold current density, high output power, and long lifetime, even with relatively high density of defects due to the material dissimilarities between III-Vs and Si. On the other hand, although conventional III-V quantum-well lasers grown on Si have been demonstrated after great efforts worldwide for more than 40 years, their practicality is still a great challenge because of their very high threshold current density and very short lifetime. However, the physical mechanisms behind the superior performance of silicon-based III-V quantum-dot lasers remain unclear. In this paper, we directly compare the performance of a quantum-well and a quantum-dot laser monolithically grown on on-axis Si (001) substrates, both experimentally and theoretically, under the impact of the same density of threading dislocations. A quantum-dot laser grown on a Si substrate with a high operating temperature (105 °C) has been demonstrated with a low threshold current density of 173 A/cm2 and a high single facet output power >100 mW at room temperature, while there is no lasing operation for the quantum-well device at room temperature even at high injection levels. By using a rate equation travelling-wave model, the quantum-dot laser's superior performance compared with its quantum well-based counterpart on Si is theoretically explained in terms of the unique properties of quantum dots, i.e., efficient carrier capture and high thermal energy barriers preventing the carriers from migrating into defect states.

Published
2020

50. Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Author

Laura Monge-Bartolome, Laurent Cerutti, Guilhem Boissier, Eric Tournié, Jean-Baptiste Rodriguez, Marta Rio Calvo, T. Cerba, Daniel A. Diaz-Thomas, Thierry Baron, Michael Bahriz, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, business.industry, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, Semiconductor laser theory, law.invention, 010309 optics, Optics, Etching (microfabrication), law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Continuous wave, Optoelectronics, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Diode
Abstract

International audience; We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

Published
2020

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