36 results on '"Balestra, Francis"'
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2. Challenges and possible solutions for the end of the Nanoelectronic Roadmap
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2020
3. Comparative experimental study of junctionless and inversion mode nanowire transistors for analog applications
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Bosch, Daphnée, Colinge, J.P., Lugo, J., Tataridou, A., Theodorou, Christoforos, Garros, Xavier, Barraud, Sylvain, Lacord, Joris, Sklenard, Benoit, Cassé, Mikaël, Brunet, L., Batude, Perrine, Fenouillet-Beranger, Claire, Lattard, D., Cluzel, J., Allain, F., Nait Youcef, R., Hartmann, J.M., Vizioz, C., Audoit, G., Balestra, Francis, Andrieux, François, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Democritus University of Thrace (DUTH), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des champs magnétiques intenses (LCMI-GHMFL), Centre National de la Recherche Scientifique (CNRS), Département Nanotec (D2NT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; We fabricated junctionless and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junctionless transistors for analog applications: AVT=1.4mV.µm matching, Av0=62dB gain (L=200nm), fT=126GHz cutoff frequency and fMAX=182GHz maximum operating frequency (L=35nm). Junctionless transistor performances even exceed those of inversion-mode ones in terms of back-bias capability, low-frequency noise, hot-carrier degradation and fMAX. This is explained by junctionless physics: channel length modulation, bulk conduction and high channel-depth sensitivity to back bias.
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- 2020
4. Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions
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Ghibaudo, Gérard, Cassé, M., Maria, F. Serra Di Santa, Theodorou, C., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
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Materials Chemistry ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,Condensed Matter Physics ,ComputingMilieux_MISCELLANEOUS ,Electronic, Optical and Magnetic Materials - Abstract
International audience
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- 2022
- Full Text
- View/download PDF
5. A novel FDSOI transistor-based uncooled microbolometer sensor for disruptive IRFPAs
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Leduc, Patrick, Aliane, A., Balestra, Francis, albouy, antoine, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; Uncooled bolometer detecting in the long wave infrared (LWIR) is a key technology for a fast growing market supported by innovations in defense and security, automotive industry and Internet of Things (IoT). Thermistor materials-whose resistance changes with temperature-like amorphous silicon (a-Si) or Vanadium Oxide (VOx) are commonly used as thermal sensitive element of uncooled bolometers. They are nevertheless not well suited for an ultimate cost reduction, as their fabrication requires a dedicated manufacturing line. One way to reduce the cost of production of this class of detectors is to aim at a bolometer integration scheme fully compatible with microelectronics industry. In this context, we propose a novel approach based on FDSOI (Fully Depleted Silicon-On-Insulator) MOS transistors as thermal sensitive element. Unlike thermistor technology, FDSOI transistors are realized on a standard CMOS line for high-throughput and low-cost manufacturing. Their performance as thermal sensors in subthreshold operation are besides higher than thermistors materials, with TCC (Temperature Coefficient of Current) in the range of 5.5-6 %/K against 2-2.5 %/K for the TCR (Temperature Coefficient of Resistance) of thermistor materials. From a technological point of view, the FPA final structure might be obtained by bonding these transistors from a first silicon wafer onto a second ROIC (Read Out Integrated Circuit) wafer thanks to a classical 3D integration process known as hybrid bonding (copper-copper and dielectric-dielectric direct bonding). This work consists in a first insight in the feasibility of the technology. It presents results obtained on FDSOI transistors that have been bonded on a second silicon wafer, thanks to a classical operation of SiO 2-SiO 2 molecular bonding. The substrate of origin (sensor wafer) of these transistors has been etched away, and a second control gate has been formed on the backside of the transistors. Measurements comparing bonded and unbonded transistors are presented. Electrical parameters like I(V), low frequency noise and TCC (Temperature Coefficient of Current) measurements are discussed to compare transistors before and after bonding. Extraction of interface trap density has also been carried out in order to assess the impact of post-bonding technological steps on the interfaces of the FDSOI transistor. Results demonstrate that electrical performances are the same between transistors measured before and after bonding, including a same level of low frequency noise and a same TCC. Interface trap density extraction shows that interfaces before and after bonding are of the same quality. 2
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- 2020
6. Status and trends in nanoscale CMOS and Beyond-CMOS
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Balestra, Francis, balestra, francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2020
7. On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
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Balestra, Francis, Ghibaudo, Gérard, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])
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[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2020
8. Challenges for high performance and very low power operation at the end of the Nanoelectronics Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_INTEGRATEDCIRCUITS ,Hardware_PERFORMANCEANDRELIABILITY ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_LOGICDESIGN - Abstract
International audience; Future Nanoelectronic devices faces substantial challenges, in particular increased power consumption, saturation of performance, large variability and reliability limitation. In this respect, novel materials and innovative device architectures will be needed for Nanoscale FETs.
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- 2019
9. Advanced technologies for future materials and devices
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2019
10. NanoCMOS and Small Slope Switches for the end of the Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2018
11. Nanoelectronics roadmap for Europe:Identification and dissemination
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Sangiogi, E., Balestra, Francis, University of Bologna, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
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stomatognathic diseases ,health care facilities, manpower, and services ,education ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,health care economics and organizations - Abstract
oral; International audience
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- 2018
12. Innovative Materials for Nanoscale MOSFETs and Small Slope Switches
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2018
13. Beyond CMOS-Devices and Future of Nanoelectronics
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2017
14. Ultimate CMOS and Beyond-CMOS for the End of the Nanoelectronic Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
Forum 4: Nanoelectronic and Nanosystems: session 404: Nanosystems and Nano-devices; International audience
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- 2017
15. Novel Materials for Low-Power and High-Performance Nanoscale FETs
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2017
16. Challenges and Solutions for High Performance Nanoscale Devices Combined with Nanomaterials
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
Module 1: Smart Nanomaterials: T105: Nanodevices and NanoSystems; International audience
- Published
- 2017
17. NanoCMOS and Tunnel FETs for the end of the Roadmap
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Balestra, Francis, Ducroquet, Frédérique, NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID, Silicon-based Nanodevices - SINANO - 26139 - OLD, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), and European Project: 26139,SINANO
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2017
18. Tunnel FETs trends and challenges
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), F. Balestra and Anda Mocuta, Sinano Summer School 2016, European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2016
19. Innovative Nanodevices for the end of the Roadmap: Ultimate scaling and performance
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2016
20. New materials and Innovative Architectures for Ultimate Nanoelectronic Devices
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2016
21. Nanowires: Nanowires for Very-Low-Power Integrated Circuits and New Functionalities
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Balestra, Francis, Östling, Mikael, Hellström, Per-Erik, E., Sangiorgi, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Royal Institute of Technology in Stockholm (KTH), Advanced Research Center on Electronic System [Bologna], University of Bologna, Ed. by Boris Ildusovich Kharisov, Oxana Vasilievna Kharissova, and Ubaldo Ortiz-Mendez
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[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; We are today facing a severe power consumption crisis, due to many factors: increase of worldwide energy consumption (by 40% in the last 20 years), cost of energy, climate warming, pollution, and restricted energy reserve. In this global scenario, electronics/information and communication technologies (ICT) is becoming a major player because a signicant part of the energy consumption (15% of electricity consumption today; but it is estimated to increase threefold in the next 20 years) is related to ICT systems. In addition, the battery lifetimes are not sufcient for the increasing needs of new mobile devices, and we need to develop future autonomous ultra-low-power (ULP) systems.
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- 2015
- Full Text
- View/download PDF
22. Emerging Steep Switch Devices & CMOS Technologies for ultra low power operation
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Future and Emerging Technologies projects MULTI and TOLOP, and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2015
23. Oxide Stress Separation technique for the assessment of Inter-Gate Dielectric integrity in 40 nm Flash memory cells
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Dobri, Adam, Jeannot, Simon, Piazza, Fausto, Jahan, Carine, Coignus, Jean, Perniola, Luca, Balestra, Francis, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), IEEE, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMethodologies_GENERAL ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
session poster; International audience
- Published
- 2015
24. Nanowires for ultimate CMOS and small slope switches
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), European Project: 26139,SINANO, Ducroquet, Frédérique, Silicon-based Nanodevices - SINANO - 26139 - OLD, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2015
25. Challenges to ultra-low-power operation
- Author
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMethodologies_GENERAL ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
session poster; International audience
- Published
- 2015
26. Multi-Gate Devices, Nanowires and Small Slope Switches for very Low Energy consumption and new functionalities
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
27. Alternative materials and beyond-CMOS FETs for very low power operation
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CMNE, and Ducroquet, Frédérique
- Subjects
ISBN-10: 192750046XISBN-13: 978-1927500460 ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
28. Small slope switching
- Author
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M. Ionescu, Adrian, Balestra, Francis, Boucart, Kathy, Salvatore, Giovanni, Rusu, Alexandru, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), F. Balestra, and European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010)
- Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
chap 1; International audience; Power dissipation in switching devices is considered today as the most important roadblock for future nanoelectronic circuits and systems. The complementary metal‐oxide‐semiconductor (CMOS) power consumption consists of two contributions: the dynamic and the static leakage components. The tunnel metal‐oxide‐semiconductor field‐effect transistor (MOSFET) offers an appealing concept for a substantial lowering of the energy dissipated in a switching device by replacing the thermionic emission of charge carriers over a barrier to enter the MOSFET channel with a tunneling process. If the tunneling process is made sufficiently effective, tunnel FETs can ultimately yield an effective cooling of the injecting source contact through a band‐pass filter action that enables steep inverse subthreshold slopes over many orders of magnitude, thus providing low values of the average subthreshold swing. This chapter focuses on the characteristics of metal‐ferroelectric‐MOS structures recently reported by EPFL group based on a complete set of experiments exploiting the internal metal contact.
- Published
- 2014
- Full Text
- View/download PDF
29. Beyond CMOS Nanodevices 1
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M.Mouis, European Project: 257375,EC:FP7:ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Hardware_MEMORYSTRUCTURES ,Hardware_INTEGRATEDCIRCUITS ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_LOGICDESIGN - Abstract
International audience; This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.
- Published
- 2014
- Full Text
- View/download PDF
30. Beyond CMOS Nanodevices 2
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M. Mouis, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Hardware_MEMORYSTRUCTURES ,Hardware_INTEGRATEDCIRCUITS ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_LOGICDESIGN - Abstract
International audience; This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.
- Published
- 2014
- Full Text
- View/download PDF
31. Ultra low power device operation
- Author
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
32. European structuring, roadmaping and networking
- Author
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), e2-Switch, ESSDERC 2014, and A. M. Ionescu
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
33. Fully-depleted SOI MOSFETs, Multi-Gate Devices, Nanowires and Small Slope Switches for very low power operation
- Author
-
Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
34. Modeling tools for the capacitance-voltage and current-voltage characteristics of advanced gate stacks comparison between different approache
- Author
-
Barin, N., Palestri, P., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla
- Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2006
35. Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures
- Author
-
Christoforos G. Theodorou, F. Balestra, Gerard Ghibaudo, L. Contamin, Mikael Casse, F. Serra di Santa Maria, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and balestra, francis
- Subjects
Materials science ,business.industry ,Scattering ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Gate length ,Silicon on insulator ,Limiting ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,MOSFET ,Materials Chemistry ,Optoelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.
- Published
- 2022
- Full Text
- View/download PDF
36. Thermal Energy Harvesting
- Author
-
Emmanouel Hourdakis, Bernard Viala, Jouni Ahopelto, Katerina Valalaki, Mireille Mouis, C. M. Sotomayor-Torres, Francesc Alzina, Emigdio Chavez-Angel, Andrey Shchepetov, Dmitry Zakharov, Marius V. Costache, Androula G. Nassiopoulou, Sergio O. Valenzuela, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Catalan Institute of Nanotechnology (ICN-CIN2), Universitat Autònoma de Barcelona (UAB), National Center for Scientific Research 'Demokritos' (NCSR), Catalan Institute of Nanoscience and Nanotechnology (ICN2), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Barcelona Institute of Science and Technology (BIST), Institució Catalana de Recerca i Estudis Avançats (ICREA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), National Research University of Electronic Technology [Moscow], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Cooperative Excitation Project (ERATO), Japan Science and Technology Corporation, F. Balestra, European Project: 257375,EC:FP7:ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Balestra, Francis
- Subjects
Materials science ,thermal energy harvesting (TEH) ,02 engineering and technology ,Porous silicon ,7. Clean energy ,01 natural sciences ,Raman thermometry ,Thermal conductivity ,0103 physical sciences ,Thermal ,Thermoelectric effect ,piezoelectric materials ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010306 general physics ,business.industry ,Electric potential energy ,021001 nanoscience & nanotechnology ,Piezoelectricity ,thermal shape memory alloy (SMA) ,porous silicon ,thermoelectric (TE) conversion ,Optoelectronics ,0210 nano-technology ,business ,Wireless sensor network ,Thermal energy - Abstract
et al., This chapter presents some recent advances in the field of thermal energy harvesting, starting with thermoelectric energy harvesting, with a focus on the prospects of materials nanostructuration. Research toward alternative solutions will also be presented. Thermoelectric (TE) conversion is the most straightforward method to convert thermal energy into electrical energy, able to power such systems as autonomous sensor networks. Raman thermometry offers particular advantages for a fast and contactless determination of the thermal conductivity. The highly porous Si material is nanostructured and has the properties of confined systems, including a very low thermal conductivity. The chapter explores an alternative route for thermal energy harvesting (TEH) with composites using the mechanical coupling between a thermal shape memory alloy (SMA) and a piezoelectric material.
- Published
- 2014
- Full Text
- View/download PDF
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