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Design solutions for on-chip signal detectors, Antenna-on- Chip and Antenna-on-Package (with Bond Wire elements), from RF, Microwave to THz frequency range, using state-of-theart SiGe BiCMOS technology are presented. Both CML and CMOS detectors are designed, fabricated and compared in terms of their performances such as conversion gain and robustness against process variations. Zero mask adder Schottky diodes with low leakage current, low junction capacitance, large breakdown voltage and with cut-off frequencies in the THz range are demonstrated for detection, mixing and down-conversion.

This paper presents a new original full wave hybrid approach based on a wave concept formulation to analyze inhomogeneous layers stack with arbitrary doping profiles. To demonstrate capabilities of this approach simulation results are presented and successfully compared to published results and available software in the case of homogeneous multilayer BiCMOS typical structure with and without buried diffusions layers (BDL) for multi-levelmetallizations. To reduce epitaxial/substrate coupling noise, metallically grilled BDL with varying doping profiles are investigated and exhibit an isolation improvement of about 20 dB.

Two MMICs have been designed and fabricated for television applications. To be compatible with the needs of the market, low cost approaches have been used to design these circuits. The first one, is an image rejection downconverter fabricated on a 2.4mm2 chip using a 0.5 micron MESFET low cost process. This circuit converts signals in the 10.95 to 12.75GHz band to a lower frequency band (1). The second one is a fully integrated 2GHz downconverter IC fabricated on a 0.9mm2 chip, using an enhancement mode GaAs process. It converts signals in the 0.95GHz to 2GHz band to the UHF band with its internal local oscillator (2). In both cases, original solutions have been used to reduce the cost of the packaged chips .