EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology

Authors :: Wane, S.
Bajon, D.
Baudrand, H.
Gamand, P.
Source :: Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Publication Year :: 2002
Publisher :: Alma Mater Studiorum - Università di Bologna, 2002.
Abstract: This paper presents a new original full wave hybrid approach based on a wave concept formulation to analyze inhomogeneous layers stack with arbitrary doping profiles. To demonstrate capabilities of this approach simulation results are presented and successfully compared to published results and available software in the case of homogeneous multilayer BiCMOS typical structure with and without buried diffusions layers (BDL) for multi-levelmetallizations. To reduce epitaxial/substrate coupling noise, metallically grilled BDL with varying doping profiles are investigated and exhibit an isolation improvement of about 20 dB.

Database :: OpenAIRE
Journal :: Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Accession number :: edsair.doi.dedup.....c83dd7959169466c33021e2a01e5a41d
Full Text :: https://doi.org/10.6092/unibo/amsacta/141

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