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BiCMOS high-performance ICs : from DC to mm-wave
- Source :
- Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy, p.115-122. Piscataway: Institute of Electrical and Electronics Engineers. [ISBN 978-1-4244-4894-4]
- Publication Year :
- 2009
-
Abstract
- Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
Details
- Database :
- OAIster
- Journal :
- Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy, p.115-122. Piscataway: Institute of Electrical and Electronics Engineers. [ISBN 978-1-4244-4894-4]
- Notes :
- Smolders, A.B.
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1028697725
- Document Type :
- Electronic Resource