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The neurocognitive health effects of repetitive head impacts have been examined in many sports. However, characterizations of head impacts for sliding-sport athletes are lacking. To describe head impact kinematics and injury epidemiology in elite athletes during the 2021–2022 Bobsleigh World Cup season. Cross-sectional study. On-track training and competitions during the Bobsleigh World Cup season. Twelve elite bobsleigh athletes (3 pilots [1 female], 9 push athletes [5 females]; age = 30 ± 5 years; female height and weight = 173 ± 8 cm and 75 ± 5 kg, respectively; male height and weight = 183 ± 5 cm and 101 ± 5 kg, respectively). Athletes wore an accelerometer-enabled mouthguard to quantify 6-degrees-of-freedom head impact kinematics. Isometric absolute and relative neck strength, number of head acceleration events (HAEs), workload (J), peak linear velocity (m·s−1), peak angular velocity (rad·s−1), peak linear acceleration (g), and peak angular acceleration (rad·s−2) were derived from mouthguard manufacturer algorithms. Linear mixed-effect models tested the effects of sex (male versus female), setting (training versus competition), and position (pilot versus push athlete) on the kinematic variables. A total of 1900 HAEs were recorded over 48 training and 53 competition days. No differences were found between the number of HAEs per run per athlete by sex (incidence rate ratio [IRR] = 0.82, P =.741), setting (IRR = 0.94, P =.325), or position (IRR = 1.64, P =.463). No sex differences were observed for workload (mean ± SD: males = 3.3 ± 2.2 J, females = 3.1 ± 1.9 J; P =.646), peak linear velocity (males = 1.1 ± 0.3 m·s−1, females = 1.1 ± 0.3 m·s−1; P =.706), peak angular velocity (males = 4.2 ± 2.1 rad·s−1, females = 4.7 ± 2.5 rad·s−1; P =.220), peak linear acceleration (male = 12.4 ± 3.9g, females = 11.9 ± 3.5g; P =.772), or peak angular acceleration (males = 610 ± 353 rad·s−2, females = 680 ± 423 rad·s−2; P =.547). Also, no effects of setting or position on any kinematic variables were seen. Male athletes had greater peak neck strength than female athletes for all neck movements, aside from right-side flexion (P =.085), but no sex differences were noted in relative neck strength. We provide a foundational understanding of the repetitive HAEs that occur in bobsleigh athletes. Future authors should determine the effects of repetitive head impacts on neurocognitive function and mental health. [ABSTRACT FROM AUTHOR]

As gallium oxide-based heterojunction devices gain prominence, low-resistance contacts to aluminum gallium oxide material are of increasing importance for high performance and access to modulation doped layers. Here, the activation of ion-implanted silicon donors is investigated as a function of donor density from 5 × 1018 cm−3 to 1 × 1020 cm−3, activation anneal duration from 6 s to 600 s, and activation temperature from 900°C to 1140°C. Importantly, ohmic behavior was achievable across a reasonably wide process window at moderate to high doping concentrations. Specific contact resistance of 1 × 10−3 Ω cm2 and sheet resistance of 2.8 kΩ/□ were achieved for a 60 nm-deep 1 × 1020 cm−3 box implant after activation at 1000°C for 6 s with standard Ti/Au contacts. Under these conditions, an activation efficiency of 7% was observed with Hall mobility of ~32 cm2/Vs. Furthermore, we demonstrate a Schottky diode formed of implanted material with a rectification ratio > 106 and further confirm the Hall carrier density results using capacitance–voltage profiling analysis. Finally, we show the significant impact of anneal duration and the potential for deleterious over-annealing which reduces the active carrier density, mobility, and resultant material conductivity. [ABSTRACT FROM AUTHOR]

Platinum oxide (PtOx) Schottky contacts on degenerately doped β-Ga2O3 substrates show an increased barrier height of 85% and 64% when compared to nickel and platinum Schottky contacts, respectively. At low reverse voltage bias, the reverse leakage current of the PtOx Schottky barrier diodes was approximately 5–6 orders of magnitude lower than the reference evaporated Ni and Pt Schottky contacts. PtOx Schottky contacts were deposited using reactive sputtering on highly doped (8 × 1018 cm−3) ( 2 ¯ 01 ) β-Ga2O3:Sn substrates grown by the edge-defined film-fed growth (EFG) method. All Schottky metals were capped with evaporated Au. Capacitance–voltage and temperature-dependent current–voltage measurements were performed in order to extract the barrier height of the PtOx Schottky contact. Analysis of the diode ideality factors reveal that the PtOx Schottky contacts on highly doped β-Ga2O3 do not follow the thermionic field emission model and are impacted by inhomogeneous barrier height distribution. This work highlights the significance of PtOx Schottky contacts for β-Ga2O3-based power devices as a means for reducing leakage current. This work also holds relevance for low-voltage applications, where Schottky contacts for degenerately doped semiconductors can enable new electronic device applications. [ABSTRACT FROM AUTHOR]

Several cardiovascular disease (CVD) risk factors (e.g., hypertension, poor glycemic control) can affect and be affected by autonomic nervous system (ANS) activity. Since excess adiposity can influence CVD development through its effect on hypertension and diabetes mellitus, it is important to determine how adiposity and altered ANS activity are related. The present study employed structural equation modeling to investigate the relation between adiposity and ANS activity both directly and indirectly through biological variables typically associated with glycemic impairment and cardiac stress in older adults. Utilizing the Atherosclerosis Risk in Communities (ARIC) dataset, 1,145 non-smoking adults (74±4.8 yrs, 62.8% female) free from known CVD, hypertension, and diabetes and not currently taking beta-blockers were evaluated for fasting blood glucose (FBG), insulin, and HbA1c concentrations, waist circumference (WC), blood pressure (BP), and markers of ANS activity. WC was recorded just above the iliac crest and was used to reflect central adiposity. Resting 2-minute electrocardiograph recordings, pulse wave velocity, and ankle-brachial index data were used to assess the root mean square of successive differences in RR intervals (RMSSD) and the pre-ejection period (PEP), markers of parasympathetic and sympathetic activity, respectively. FBG, insulin, and HbA1c inferred a latent variable termed glycemic impairment (GI), whereas heart rate and diastolic BP inferred a latent variable termed cardiac stress (CS). The structural equation model fit was acceptable [root mean square error of approximation = 0.050 (90% CI =.036,.066), comparative fit index =.970, Tucker Lewis Index = 0.929], with adiposity having both significant direct (β = 0.208, p = 0.018) and indirect (β = -.217, p =.041) effects on PEP through GI. Adiposity displayed no significant direct effect on RMSSD. CS displayed a significant pathway (β = -0.524, p = 0.035) on RMSSD, but the indirect effect of WC on RMSSD through CS did not reach statistical significance (β = -0.094, p = 0.137). These results suggest that adiposity's relation to ANS activity is multifaceted, as increased central adiposity had opposing direct and indirect effects on markers of sympathetic activity in this population of older adults. [ABSTRACT FROM AUTHOR]

Protein modification by ubiquitin fold modifier 1 (UFM1), termed ufmylation, regulates various physiological and pathological processes. Among emerging UFM1 targets, UFM1 binding protein 1 (UFBP1) is the first identified ufmylation substrate. Recent clinical and animal studies have demonstrated the pivotal roles of UFBP1 in development, hematopoiesis, intestinal homeostasis, chondrogenesis, and neuronal development, which has been linked to its function in maintaining endoplasmic reticulum (ER) homeostasis. However, the importance of UFBP1 ufmylation in these cellular and physiological processes has yet to be determined. It has been proposed that ufmylation of lysine 268 (267 in humans) in UFBP1 plays a critical role in mediating the effects of the ufmylation pathway. In this study, we for the first time probe the pathophysiological significance of UFBP1 ufmylation in vivo by creating and characterizing a mouse UFBP1 knockin (KI) model in which the lysine 268 of UFBP1, the amino acid accepting UFM1, was mutated to arginine. Our results showed that the K268R mutation reduced the total ufmylated proteins without altering the expression levels of individual ufmylation enzymes in mouse embryonic fibroblasts. The K268R mutation did not alter ER stress–stimuli–induced ER stress signaling or cell death in mouse embryonic fibroblasts. The homozygous KI mice were viable and morphologically indistinguishable from their littermate wild–type controls up to one year of age. Serial echocardiography revealed no cardiac functional impairment of the homozygous KI mice. Furthermore, the homozygous KI mice exhibited the same susceptibility to dextran sulfate sodium (DSS) –induced colitis as wild-type mice. Taken together, these results suggest that UFBP1 K268 is dispensable for ER stress response, embryonic development, cardiac homeostasis under physiological conditions, and intestinal homeostasis under pathological conditions. Our studies call for future investigations to understand the biological function of UFBP1 ufmylation and offer a new mouse model to determine the roles of UFBP1 ufmylation in different tissues under stress conditions. [ABSTRACT FROM AUTHOR]

Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization. Herein, we report highly effective silicon ion implant activation in GaN via Symmetrical Multicycle Rapid Thermal Annealing (SMRTA) at peak temperatures of 1450 to 1530 °C, producing a mobility of up to 137 cm2/Vs at 300K with a 57% activation efficiency for a 300 nm thick 1 × 1019 cm−3 box implant profile. Doping activation efficiency and mobility improved alongside peak annealing temperature, while the deleterious degradation of the as-grown material electrical properties was only evident at the highest temperatures. This demonstrates efficient dopant activation while simultaneously maintaining low levels of unintentional doping and thus a high blocking voltage potential of the drift layers for high-voltage, high-power devices. Furthermore, efficient activation with high mobility has been achieved with GaN on sapphire, which is known for having relatively high defect densities but also for offering significant commercial potential due to the availability of cheap, large-area, and robust substrates for devices. [ABSTRACT FROM AUTHOR]

Vertical power devices require significant attention to their edge termination designs to obtain higher breakdown voltages without substantial increase in ON-state resistance. A simple edge termination structure for a GaN p-n diode is proposed, comprising a full layer lightly doped p-type GaN region underneath the higher doped ${p} +\!+$ contact layer. A TCAD model of the device is developed, and removal of the portions of ${p}$ ++ cap outside of the device active area in simulations is shown to increase the device blocking voltage capability. It causes the depletion width to increase in the lightly doped p-type layer and allows it to act similar to a junction termination extension (JTE). These predictions are validated empirically, resulting in a 52% measured increase in breakdown capability after selective removal of the ${p}$ ++ cap. This simple edge termination technique can be formed with only a single low-energy nitrogen implant or etching procedure, greatly increasing its manufacturability over more complex structures. Design optimization studies are pursued in TCAD to determine optimal parameter values for further improving breakdown performance. It is shown that the proposed edge termination technique can be employed to produce future high voltage vertical GaN devices without a significant gain in ON-state resistance and with wide tolerance to process variations. [ABSTRACT FROM AUTHOR]

GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the electroluminescence were studied as functions of the anode thickness. A repeatable avalanche breakdown and highest breakdown voltage were measured with the thinnest anode of 300 nm and with the thinnest edge termination region. This indicates the efficacy of the nitrogen-implanted hybrid edge termination design that comprises of junction termination and guard rings hybrid design. As the anode thickness increases, the edge termination thickness increases, and the devices exhibit lower breakdown voltages and less robust breakdown characteristics, often destructive. From this study, we also conclude that a very high p-layer doping of 2 × 1019 cm−3 is not s practical doping level, because it is too sensitive to the edge termination thickness. [ABSTRACT FROM AUTHOR]

We also observed no differences in COVID-19 prevalence for athletes I P i = 0.970), staff ( I P i = 0.976), or combined Team USA delegation members ( I P i = 0.962) between the Olympic and Paralympic Games. 2 International Olympic Committee, International Paralympic Committee, Tokyo 2020 Organising Committee and Tokyo Metropolitan Government announce new dates for the Olympic and Paralympic Games Tokyo 2020 - Olympic News. No differences in average days in quarantine were observed between Team USA Olympic athletes and all other Olympic athletes or Team USA staff (all I P i > 0.05). No differences in COVID-19 prevalence between Team USA athletes and staff at the Olympic ( I P i = 0.628) or Paralympic Games ( I P i = 0.784) were observed. [Extracted from the article]

Terminal mono-oxo complexes of the late transition metal elements have long been considered too unstable to synthesize because of repulsion between the oxygen electrons and the mostly filled metal d orbitals. A platinum(IV)-oxo compound flanked by two polytungstate ligands, [K.sub.7][Na.sub.9][O=Pt([H.sub.2]O)[L.sub.2]], L = [[P[W.sub.9][O.sub.34]].sup.9-], has now been prepared and isolated at room temperature as air-stable brown crystals. X-ray and neutron diffraction at 30 kelvin revealed a very short [1.720(18) angstrom] Pt-O bond and no evidence of a hydrogen atom at the terminal oxygen, ruling out a better precedented Pt-OH complex. Density functional theory and spectroscopic data account for the stability of the Pt(IV)-oxo unit by electron withdrawal into delocalized orbitals of the polytungstates., Despite the high electronegativity of oxygen, the terminal oxo ligand is a strong π electron donor. Lone oxygen atoms therefore bind most stably to high valent early transition metals, such [...]

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown. [ABSTRACT FROM AUTHOR]

This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of $0.75~\Omega ~ \cdot ~mm$ , avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of ~12.5 kV and a specific resistance of 100.8 $\text{m}\Omega ~ \cdot ~cm^{2}$. [ABSTRACT FROM AUTHOR]

Heterojunction field-effect transistors based on the β-(AlxGa1−x)2O3/Ga2O3 heterostructure grown by ozone-assisted molecular beam epitaxy were demonstrated for the first time. Al composition ratios in the 14%–23% range were validated using x-ray diffraction on the three samples grown for this study. Electrochemical capacitance-voltage (ECV) measurements showed the presence of a charge sheet in the delta-doped (AlxGa1−x)2O3 barrier layer. Secondary ion mass spectroscopy and ECV measurements also revealed an unintentional Si peak at the (AlxGa1−x)2O3/Ga2O3 interface. Direct current (IDS-VGS) and transconductance (Gm-VGS) measurements demonstrated depletion-mode transistor operation as well as the presence of a parallel conduction channel. A one-dimensional Poisson model suggested that dopant redistribution in the delta-doped region could cause a secondary channel to form in the barrier in addition to the primary channel near the (AlxGa1−x)2O3/Ga2O3 interface under certain conditions met in these samples. Fabricated devices on sample A did not exhibit breakdown up to the measurement limit of 1100 V, with stability after ten cycles. A maximum output drain current density of 22 mA/mm was measured on sample B. Room temperature Hall measurements yielded a sheet carrier density of 1.12 × 1013 cm−2 with corresponding Hall mobility of 95 cm2/V s in sample C. [ABSTRACT FROM AUTHOR]

Two American collegiate football linemen completed physical activity surveys, anthropometric assessments, dietary recalls, and blood draws across a 20-month period during which Player A continued training professionally in football while Player B transitioned out of the sport after his final collegiate season. Few changes were observed for Player A, whereas notable changes in physical activity, body mass, and endocrine factors associated with metabolic regulation were noted in Player B. Considerable alterations in physical activity and biomarkers occurred in the immediate transition out of competitive football, suggesting the possibility of long-term health consequences in the absence of future positive lifestyle behavioral changes. Alternatively, the adoption or maintenance of health behaviors could reverse risks. With a greater emphasis on lifespan wellness, this level 2 exploratory case series illustrates a key opportunity for athletic trainers to monitor athletes' cardiometabolic risks over an extended period and implement transitional care strategies to promote postcompetitive health. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrates is assessed using a high-resolution thermoreflectance (TR) imaging technique, to compare the thermal response between GaN-on-Si, GaN-on-Diamond, and GaN-on-4H-SiC. The TR method accuracy at high-power density is verified using a nonlinear coefficient of TR (CTR) as a function of temperature. The acquired steady-state thermal maps give a thermal resistance of 11.5~mm ⋅ K/W for GaN-on-Si (based on peak channel temperature), compared to 2.7 and 3.3~mm ⋅ K/W for GaN-on-SiC and GaN-on-diamond substrates, respectively. The tested GaN-on-diamond HEMT exhibits similar heating rates to those seen on a SiC substrate, with a slightly higher peak temperature, which indicates a higher thermal boundary resistance that could offset the benefits of using a higher conductivity substrate and lead to faster thermally enhanced degradation. The analysis reveals the importance using high-resolution imaging to detect hotspots and areas of peak temperature that largely affect failure initiation and device reliability and which may not be otherwise observable. [ABSTRACT FROM AUTHOR]

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. In this work, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically. [ABSTRACT FROM AUTHOR]

We report selective area n-type doping using ion implantation of Si into semi-insulating, C-doped GaN samples activated using both conventional rapid thermal annealing (RTA) and 30 atm N2 overpressure annealing. Implanted regions were tested for Si activation using Circular Transmission Line Measurements (CTLM), while linear and circular photoconductive switches (PCSS) in the unimplanted regions were used as a test vehicle to separate implanted Si dopant activation from leakage paths generated by N vacancy formation due to damage and decomposition during annealing. We observed that at an optimal temperature around 1060 °C, a low contact resistivity of $1\times 10^{-6}\,\,\Omega $ -cm2 was obtained while preserving the breakdown of the unimplanted regions. [ABSTRACT FROM AUTHOR]

Context: Although fatigue has been implicated in anterior cruciate ligament (ACL) injury, few researchers have examined the timing of injury across a competitive sport season or within a competitive session to gain insight into the potential effects of fatigue on the incidence of ACL injury. Objective: To identify the time segments across a competitive season or within an individual competition associated with the greatest ACL injury incidence. Design: Descriptive epidemiology study. Methods: Data from the National Collegiate Athletic Association Injury Surveillance Program for 2004-2005 through 2015-2016 for basketball, lacrosse, and soccer were analyzed. Incidence rate ratios (IRRs) compared ACL injury rates by sport, sex, season segment, and competition period. Poisson regression was used to examine the associations between each of these categories and the incidence of ACL injury as well as interaction effects. Results: During the early regular season, the incidence rate was elevated relative to the preseason (IRR = 1.86; 95% confidence interval [CI] = 1.27, 2.74), middle regular season (IRR = 1.48; 95% CI = 1.01, 2.15), late regular season (IRR = 1.56; 95% CI=1.08, 2.27), and postseason (IRR=2.20; 95% CI = 1.06, 4.56). A sport-by-season interaction indicated this effect was largely attributable to a higher incidence in the early season among lacrosse athletes. An interaction between season segment and competition period (P = .02) revealed a greater injury incidence before halftime in the early regular season (IRR = 0.38, 95% CI = 0.19, 0.76), but a greater incidence after halftime in the late regular season (IRR = 2.40, 95% CI = 1.15, 5.02). Fewer noncontact injuries occurred in soccer than in basketball or lacrosse. Conclusions: The ACL injury incidence was higher in the early part of the regular season, particularly among lacrosse athletes. Although the injury incidences before and after halftime were similar, further analyses of player time and time of injury within each half are necessary. Coaches and practitioners should be cognizant of the elevated injury incidence during the early season among lacrosse athletes. Future authors should consider more specific analyses to further elucidate the potential role of fatigue development in exacerbating the incidence of ACL injury in collegiate athletes both within games and across the season. [ABSTRACT FROM AUTHOR]

Evidence suggests menstrual cycle variation in the hormone relaxin may have an impact on ligament integrity and may be associated with risk of anterior cruciate ligament injury in physically active women. However, studies to date have only detected relaxin in a small number of participants, possibly due to inter-individual variability, frequency of sample collection, or analytical techniques. Therefore, the purpose of this study was to analyze serial serum samples in moderately active, eumenorrheic women to identify the proportion of women with detectable relaxin concentrations. Secondary analyses were conducted on two independent data sets. Data Set I (DSI; N = 66) participants provided samples for 6 days of menses and 8–10 days of the luteal phase. Data Set II (DSII; N = 15) participants provided samples every 2–3 days for a full menstrual cycle. Samples were analyzed via a relaxin-2 specific ELISA assay. Limit of detection (LOD) was calculated from the empirical assay data. LOD was calculated as 3.57 pg·ml−1. Relaxin concentrations exceeded the LOD in 90.91% (DSI) and 93.33% (DSII) of participants on at least 1 day of sampling. Actual peak values ranged from 0.0 pg·ml−1 to 118.0 pg·ml−1. Relaxin was detectable in a higher proportion of young women representing a broad range of physical activity levels when sampled more frequently. Future studies investigating relaxin should consider sampling on more than 1 day to accurately capture values among normal menstruating women. [ABSTRACT FROM AUTHOR]

Threading and basal dislocations were observed and their Burgers vectors ( b → ) were analyzed in 20 µm thick halide vapor phase homoepitaxially grown beta-gallium oxide (β−Ga2O3) films using 15 keV monochromatic synchrotron X-ray topography with symmetric reflection (004) and two asymmetric reflections (205) and (115) in back-reflection and grazing incidence angle geometries, respectively. In a 1 × 1.5 cm2 sample, threading screw dislocations with b → = 001 were observed with a density of 30 cm−2, whereas a single threading edge dislocation with b → = 100 was observed. Basal dislocations with b → = 1 2 112 were observed with a density of ∼20 cm−2, and a single basal dislocation with b → = 010 was observed. Rocking curve mapping of the three reflections was also performed on the entire sample with the same setup and a high resolution x-ray camera to obtain the full width at half maximum (FWHM), strain, and curvature maps in two almost orthogonal directions. The epilayer demonstrated excellent crystalline quality with a median FWHM of 8.2 arc sec in the (004) reflection and a very low median strain of ∼|8 × 10−5| obtained from both sample directions. The median radius of curvature was ∼−100 m along the [100] direction and ∼280 m along the [010] sample axis, indicating very low lattice plane curvature that enables high manufacturability and reliability of devices. [ABSTRACT FROM AUTHOR]

Background: The cortisol awakening response (CAR) has been used as a biomarker of stress response in a multitude of psychological investigations. While a myriad of biochemical responses have been proposed to monitor responses to exercise training, the use of CAR within the exercise and sports sciences is currently limited and is a potentially underutilized variable. Therefore, the purpose of this review was to collate studies that incorporate both exercise and CAR, in an effort to better understand (a) whether CAR is a useful marker for monitoring exercise stress and (b) how CAR may be most appropriately used in future research. Methods: A systematic review of the literature was conducted, following PRISMA guidelines. Searches were conducted using PubMed, SportDISCUS, Scopus, and PsychInfo databases, using search terms related toCAR and exercise and physical activity. Results: 10,292 articles were identified in the initial search, with 32 studies included in the final analysis. No studies investigated the effects of laboratory-controlled exercise on CAR. Variable effects were observed, possibly due to inconsistencies in study design, methodology, population, and CAR analysis. The available literature suggests a threshold of exercise may be required to alter the HPA axis and affect CAR. Moreover, CAR may represent a combination of previous exercise load and upcoming stress, making current interpretation of field-based observational research challenging. Conclusions: More research is needed to fully elucidate the influence of exercise on CAR and address a number of gaps in the literature, including controlling exercise load, consistent sample collection, and CAR calculation and analysis. [ABSTRACT FROM AUTHOR]

The activation of ion implanted p-type dopants in GaN is notoriously difficult as the extremely high temperatures required to activate implanted Mg also damage the GaN crystal. In this paper, we present refinements to our novel annealing process (symmetric multicycle rapid thermal annealing) to reduce surface damage and contamination responsible for elevated leakage currents and non-ideal diode behavior. Furthermore, we apply the technique to Mg-implanted bulk GaN substrates to enable vertical power device structures, demonstrating rectifying p-i-n junctions. In addition, the technique was applied for edge termination in both p-i-n and Schottky barrier diodes, realizing floating guard ring and junction termination extension structures. The processes demonstrated here represents a key enabling step for future GaN-based power devices. [ABSTRACT FROM AUTHOR]

In this paper, electrical characterization results of N-polar GaN high-electron-mobility transistors that have been released from a 6H-SiC wafer and manually transferred to a Si wafer using a novel epitaxial lift-off (ELO) technique are presented. This recently developed ELO method uses a thin sacrificial layer of Nb2N, a hexagonal epitaxial conductor with less than 1% lattice mismatch to 4H- and 6H-SiC, to serve as the template for III-N device heterostructure growth. Measured results of transferred devices indicate that electron transport properties and low power density electrical performance are nominally unchanged relative to values measured before release. This technique has several advantages over competing ELO techniques, such as the well-known smart cut method, including bonding-ready released material with atomically-smooth backsides (≤ 0.5 nm rms), easy substrate reclaim with indefinite recycling potential, and a transfer process that can be performed after full front-side device processing and yield screening has been completed. [ABSTRACT FROM AUTHOR]

InAlN/GaN high electron mobility transistors were irradiated from the front side with 340keV protons to a dose of 5 × 1013 cm-2. Raman thermography showed that the irradiated devices had higher channel temperatures than unirradiated control devices, but only by ~10% under typical biasing conditions. Accordingly, the irradiated devices have higher thermal resistance (400°C/W) compared to reference devices (350°C/W), based on the slope of the power versus channel temperature line. However, increases of 42% in off-state drain breakdown voltage (VBR) and of >92% in critical voltage (Vcri) were observed for the proton irradiated HEMT. This is ascribed to the reduction of the peak electric field at the gate edges by ~50% through the introduction of negative trap charges created from vacancies generated by the proton irradiation. [ABSTRACT FROM AUTHOR]

A finite-element model coupling 2-D electron gas (2-DEG) density, piezoelectric polarization charge Q{\bf P}, and intrinsic stress induced by a nanocrystalline diamond capping layer, was developed for AlGaN/GaN high electron mobility transistors. Assuming the surface potential is unchanged by an additional stress from diamond capping, tensile stress from the diamond cap leads to an additional tensile stress in the heterostructure and, thus an increase in the 2-DEG under the gate. As a result, additional compressive stress near the gate edges would develop and lead to decreased 2-DEG in the regions between the source and drain contacts (SDCs). Increased saturation drain current will be due to the reduced total resistance between SDC. Integration of the 2-DEG density from SDC revealed a redistribution of sheet density with total sheet charge concentration remaining unchanged. The modeling results were compared with the experimental data from Raman spectroscopy and I-V characterization, and good agreements were obtained. [ABSTRACT FROM AUTHOR]

comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiN is presented. Performing ex situ SiN passivation increased the reverse gate leakage and off-state channel leakage by about three orders of magnitude. The in situ SiN layer was characterized using transmission electron microscopy (TEM) and capacitance-voltage (CV) measurements. Photoluminescence (PL) spectra indicated a reduction of nonradiative recombination centers in in situ SiN-passivated samples, indicating improved crystal quality. CV measurements indicated a reduction of surface state density as well, and thus better overall passivation using in situ SiN. Electroluminescence (EL) images of the channel regions in AlGaN/GaN HEMT devices operating in forward blocking mode with up to 400 V drain bias demonstrated reduced channel emission profiles of in situ-passivated devices. Compared with a nonpassivated reference sample, the reduced EL emission profiles correlated with a reduced channel temperature on ex situ SiN-passivated devices. [ABSTRACT FROM AUTHOR]

A threshold reverse bias of ∼21 V was observed leading to a sharp increase in the gate current of AlGaN/GaN high electron mobility transistors biased at low source-drain voltage (5 V). The gate current increases by one to two orders of magnitude at this bias, corresponding to an electric field strength around 1.8 MV cm-1. The gate current increased by roughly five orders of magnitude after step-stressing the gate bias from 10 to 42 V in 1 V increments for 1 min at each bias. The drain current was also decreased by ∼20% after this step-stress cycle. The photoluminescence and electroluminescence intensity from the semiconductor is decreased along the periphery of the gate region after stressing and transmission electron microscopy shows a thin native oxide layer under the gate and this disappears as the gate metal reacts with the underlying AlGaN. [ABSTRACT FROM AUTHOR]