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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors.
- Source :
- Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2014, Vol. 32 Issue 5, p1-5, 5p
- Publication Year :
- 2014
-
Abstract
- InAlN/GaN high electron mobility transistors were irradiated from the front side with 340keV protons to a dose of 5 × 10<superscript>13</superscript> cm<superscript>-2</superscript>. Raman thermography showed that the irradiated devices had higher channel temperatures than unirradiated control devices, but only by ~10% under typical biasing conditions. Accordingly, the irradiated devices have higher thermal resistance (400°C/W) compared to reference devices (350°C/W), based on the slope of the power versus channel temperature line. However, increases of 42% in off-state drain breakdown voltage (V<subscript>BR</subscript>) and of >92% in critical voltage (V<subscript>cri</subscript>) were observed for the proton irradiated HEMT. This is ascribed to the reduction of the peak electric field at the gate edges by ~50% through the introduction of negative trap charges created from vacancies generated by the proton irradiation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21662746
- Volume :
- 32
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
- Publication Type :
- Academic Journal
- Accession number :
- 101866763
- Full Text :
- https://doi.org/10.1116/1.4891629