Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors.

MLA

Anderson, Travis, et al. “Effect of Proton Irradiation on Thermal Resistance and Breakdown Voltage of InAlN/GaN High Electron Mobility Transistors.” Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, vol. 32, no. 5, Sept. 2014, pp. 1–5. EBSCOhost, https://doi.org/10.1116/1.4891629.

APA

Anderson, T., Koehler, A., Ya-Hsi Hwang, Yueh-Ling Hsieh, Shun Li, Fan Ren, Johnson, J. W., & Pearton, S. J. (2014). Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, 32(5), 1–5. https://doi.org/10.1116/1.4891629

Chicago

Anderson, Travis, Andrew Koehler, Ya-Hsi Hwang, Yueh-Ling Hsieh, Shun Li, Fan Ren, Jerry Wayne Johnson, and Stephen J. Pearton. 2014. “Effect of Proton Irradiation on Thermal Resistance and Breakdown Voltage of InAlN/GaN High Electron Mobility Transistors.” Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics 32 (5): 1–5. doi:10.1116/1.4891629.