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High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates.
- Source :
- IEEE Transactions on Electron Devices; Dec2020, Vol. 67 Issue 12, p5415-5420, 6p
- Publication Year :
- 2020
-
Abstract
- Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrates is assessed using a high-resolution thermoreflectance (TR) imaging technique, to compare the thermal response between GaN-on-Si, GaN-on-Diamond, and GaN-on-4H-SiC. The TR method accuracy at high-power density is verified using a nonlinear coefficient of TR (C<subscript>TR</subscript>) as a function of temperature. The acquired steady-state thermal maps give a thermal resistance of 11.5~mm ⋅ K/W for GaN-on-Si (based on peak channel temperature), compared to 2.7 and 3.3~mm ⋅ K/W for GaN-on-SiC and GaN-on-diamond substrates, respectively. The tested GaN-on-diamond HEMT exhibits similar heating rates to those seen on a SiC substrate, with a slightly higher peak temperature, which indicates a higher thermal boundary resistance that could offset the benefits of using a higher conductivity substrate and lead to faster thermally enhanced degradation. The analysis reveals the importance using high-resolution imaging to detect hotspots and areas of peak temperature that largely affect failure initiation and device reliability and which may not be otherwise observable. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 148948843
- Full Text :
- https://doi.org/10.1109/TED.2020.3028557