23 results on '"Liu, W. J."'
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2. Optical Boundary Reconstruction With Visible Camera in the EXL-50 Spherical Tokamak.
3. Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOx Channels via O2 Plasma Treatment.
4. Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior
5. Physical and electrical characterization of junction between single-layer graphene (SLG) and Ti prepared by various processes
6. Bias temperature instability of binary oxide based ReRAM
7. Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
8. Image tracking for wheeled mobile robots
9. Self-Selection Unipolar \HfOx -Based RRAM.
10. Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection.
11. Highly Uniform, Self-Compliance, and Forming-Free ALD \HfO2-Based RRAM With Ge Doping.
12. Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High- \kappa and Integration With a TiN Metal Gate in a Gate-Last Process.
13. Design and implementation of multimedia conference system on broadcast networks.
14. Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency Noise.
15. A Modified Charge-Pumping Method `for the Characterization of Interface-Trap Generation in MOSFETs.
16. Magnets for HIRFL-CSR Rings.
17. Impacts of the Embedded Windings to the Field Quality of Dipole.
18. A Self-Rectifying \AlOy Bipolar RRAM With Sub-50-\mu\A Set/Reset Current for Cross-Bar Architecture.
19. A Self-Rectifying \HfOx -Based Unipolar RRAM With NiSi Electrode.
20. Positive Bias-Induced Vth Instability in Graphene Field Effect Transistors.
21. A High-Yield \HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration.
22. Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy.
23. Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices.
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