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Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection.
- Source :
- IEEE Transactions on Device & Materials Reliability; Jun2012, Vol. 12 Issue 2, p478-481, 4p
- Publication Year :
- 2012
-
Abstract
- Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding \Delta Vth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (\H2/\Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased \Delta Vth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 15304388
- Volume :
- 12
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Device & Materials Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 76403509
- Full Text :
- https://doi.org/10.1109/TDMR.2012.2190414