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Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices.
- Source :
- IEEE Electron Device Letters; May2010, Vol. 31 Issue 5, p476-478, 3p
- Publication Year :
- 2010
-
Abstract
- In this letter, the temperature instability of HfO<subscript>x</subscript>-based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 31
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 51117126
- Full Text :
- https://doi.org/10.1109/LED.2010.2041893