42 results on '"Jones, K.S."'
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2. Process technology - advances in source drain engineering [Session 42]
3. Statistics and Retrieval: Past and Future.
4. The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing
5. Electrical activation of implanted single crystal germanium substrates
6. Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing.
7. Electrical activation of implanted single crystal germanium substrates.
8. Co-implantation of boron and fluorine in silicon.
9. A new model for {311} defects based on in situ measurements.
10. The role of fluorine on reducing TED in boron implanted silicon.
11. Boron diffusion upon annealing of laser thermal processed silicon.
12. The Cambridge University spoken document retrieval system
13. Dopants, Defects, Clusters: A Process Modelling Taxonomy.
14. Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon.
15. Transient enhanced diffusion and defect studies in B implanted Si.
16. The effect of end of range loops on transient enhanced diffusion in Si.
17. The effects of strain on dopant diffusion in silicon.
18. A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors.
19. Predictive simulation of transient activation processes in boron-doped silicon structures.
20. Brain-computer interfaces based on the steady-state visual-evoked response.
21. The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing.
22. Boron diffusion upon annealing of laser thermal processed silicon
23. A new model for {311} defects based on in situ measurements
24. The role of extended defects on the formation of ultra-shallow junctions in ion implanted /sup 11/B/sup +/, /sup 49/BF/sub 2/, /sup 75/As/sup +/ and /sup 31/P/sup +/
25. Modeling the nucleation and evolution of end of range dislocation loops in silicon
26. Effect of varying implant energy and dose on the SIMOX microstructure
27. The role of fluorine on reducing TED in boron implanted silicon
28. The chemical effect of fluorine on boron transient enhanced diffusion
29. Fluorine effect on boron diffusion: chemical or damage?
30. Defect formation in MeV ion implantation of boron and phosphorus
31. A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors
32. Transient enhanced diffusion in low energy arsenic implanted silicon
33. Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing
34. Effect of varying implant energy and dose on the SIMOX microstructure.
35. Fundamental material analysis and SIMOX improvement as a function of independent implant parameter control.
36. Fluorine effect on boron diffusion: chemical or damage?
37. The role of extended defects on the formation of ultra-shallow junctions in ion implanted /sup 11/B/sup +/, /sup 49/BF/sub 2/, /sup 75/As/sup +/ and /sup 31/P/sup +/.
38. The chemical effect of fluorine on boron transient enhanced diffusion.
39. Transient enhanced diffusion in low energy arsenic implanted silicon.
40. Defect formation in MeV ion implantation of boron and phosphorus.
41. MeV implanted boron and phosphorus photoresist penetration tests.
42. Enhanced elimination of extended defects associated with P/sup +/ and Ga/sup +/ implantation of SIMOX.
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