43 results on '"HAUSER, J.R."'
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2. Growth and characterization of a two-junction, stacked solar cell.
3. Theory of solar cells incorporating impurity gradients.
4. Design, optimization, and characterization of a low temperature RPECVD MOS gate stack process.
5. Design and operation of a cluster-tool-based rapid thermal processing module.
6. Garp: a MIPS processor with a reconfigurable coprocessor.
7. SEU-hardened silicon bipolar and GaAs MESFET SRAM cells using local redundancy techniques.
8. Noise margin criteria for digital logic circuits.
9. An analytic model for MODFET capacitance-voltage characteristics.
10. Forward-bias conduction of Schottky diodes on polysilicon thin films.
11. Calculations of high-speed performance for submicrometer ion-implanted GaAs MESFET devices.
12. A comparative analysis of GaAs and Si ion-implanted MESFET's.
13. Spectral response of n+-n-p and n+-p photodiodes.
14. Electron and hole mobilities in silicon as a function of concentration and temperature.
15. Material and device considerations for cascade solar cells.
16. Performance limitations of silicon solar cells.
17. A computer analysis of heterojunction and graded composition solar cells.
18. Cener for advanced electronic materials processing.
19. Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition.
20. Electrical properties of composite gate oxides formed by rapid thermal processing.
21. Some observations on charge buildup and release in silicon dioxide irradiated with low energy electrons.
22. Small signal properties of field effect devices.
23. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries.
24. Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks.
25. Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics.
26. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors.
27. An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications.
28. DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy.
29. Ballistic transport in GaAs.
30. Ultrathin oxide-nitride gate dielectric MOSFET's.
31. On the deeply depleted MOS capacitor.
32. Overview of high K gate dielectric research
33. High power nitrogen-incorporating remote plasma oxidation process for MOS applications
34. Overview of high K gate dielectric research.
35. On the beta falloff in junction transistors.
36. Beta falloff in tansistors at high collector currents.
37. An approximation for generation-recombination current in P-N junctions.
38. Session 6 Quantum electronics and energy conversion devices—Photovoltaics.
39. Session 20 Quantum electronics and energy conversion devices—Optical devices.
40. Session 18 Quantum electronics and energy conversion devices—Thin-film and polycrystalline solar cells.
41. Session 11 Quantum electronics and energy conversion devices—Terrestrial solar cells.
42. High power nitrogen-incorporating remote plasma oxidation process for MOS applications.
43. Effect of mechanical stress on the electrical characteristics of p-n junction devices.
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