48 results on '"Gamand, P."'
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2. A low phase noise signal generation system for Ka-Band P2P applications based on an injection-locked frequency tripler
3. A fully integrated highly linear efficient power amplifier in 0.25µm BiCMOS technology for wireless applications
4. Built-In-Self-Test (BIST) probing for wireless non-contact measurement and characterization of integrated circuits and systems
5. Analysis and design of low-power - low-noise crystal oscillators accounting for electro-mechanical energy conversion aspects
6. Low-power digitally-controlled variable gain LNA with high isolation for sub-GHz ISM bands
7. BiCMOS high-performance ICs: From DC to mm-wave
8. A differential SiP (LNA-filter-mixer) in silicon technology for the SKA project
9. A 0.1-1.7 GHz, 1.1dB NF low noise amplifier for radioastronomy application
10. Substrate injection characterization in CMOS mixed signal systems on chip
11. Silicon-Integrated 2-GHz Fully-Differential Tunable Recursive Filter for MMIC Three-Branch Channelized Bandpass Filter Design
12. Towards cognitive built-in-self-test (BIST) for reconfigurable on-chip applications, and contact-less measurement.
13. Design of Antenna-on-Chip, Antenna-on-Package and detectors from RF, microwave to THz frequency range in SiGe-C technology.
14. Built-In-Self-Test (BIST) probing for wireless non-contact measurement and characterization of integrated circuits and systems.
15. EM Analysis of Shielding Strategies to reduce Substrate Noise in Silicon based Technology
16. System level analysis and experimental characterization of frequency pulling in PLLs.
17. Multi-physics modeling of electro-mechanical oscillators: Comparative analysis of Colpitts and Cross-Coupled architectures.
18. A continuous analysis of the oscillation amplitude in MOS LC-VCOs.
19. Low-power digitally-controlled variable gain LNA with high isolation for sub-GHz ISM bands.
20. Challenges in integrating embedded RF within a SOC.
21. Substrate injection characterization in CMOS mixed signal systems on chip.
22. A differential SiP (LNA-filter-mixer) in silicon technology for the SKA project.
23. Integrated differential 2 GHz 2.7V low-noise active bandpass filters on silicon.
24. Effects of buried layers doping rate on substrate noise coupling: efficiency of deep-trench techniques to improve isolation capability.
25. A differential-based single-ended 2 GHz low-noise recursive filter on silicon.
26. Multilevel approach for the investigation of substrate parasitics in mixed-signal IC's from full-wave analysis.
27. Full wave analysis of isolated pockets to improve isolation performances in silicon based technology.
28. On-wafer measurement uncertainty for 3-terminal active millimetre-wave devices.
29. Millimetre Wave Monolithic HEMT Oscillators Fabricated with a Standard 0.5 μm Process.
30. A Complete Small Size 2 to 30 GHz Hybrid Distributed Amplifier Using a Novel Design Technique.
31. New Design Tools for High Fabrication Yield Low Cost Monolithic GaAs Circuits using Passive and Active Components Statistical Models.
32. Millimetre Wave Monolithic HEMT Oscillators Fabricated with a Standard 0.5 ?m Process
33. Analysis of the oscillation conditions in distributed amplifiers.
34. Potential Power Performances of the Distributed Amplifiers.
35. A cost effective true European DBS low noise converter.
36. Monolithic circuits for 60 GHz communication systems using pseudomorphic HEMT process.
37. 2 to 42 GHz flat gain monolithic HEMT distributed amplifiers.
38. New Design Tools for High Fabrication Yield Low Cost Monolithic GaAs Circuits using Passive and Active Components Statistical Models
39. Potential Power Performances of the Distributed Amplifiers
40. Full wave analysis of isolated pockets to improve isolation performances in silicon based technology
41. Full-wave analysis of multi-level couplings between planar sources. Influence of interrupted, backed and grilled ground shields
42. Influence of depleted layers on the propagation characteristics and on the couplings in multilayer silicon ICs with buried diffusions
43. Fullwave analysis of transverse and longitudinal couplings in silicon RFIC. Effect of buried diffusions
44. Multilevel approach for the investigation of substrate parasitics in mixed-signal IC's from full-wave analysis
45. A new full-wave hybrid differential-integral approach for the investigation of multilayer structures including nonuniformly doped diffusions.
46. Full-wave analysis of multi-level couplings between planar sources. Influence of interrupted, backed and grilled ground shields.
47. Fullwave analysis of transverse and longitudinal couplings in silicon RFIC. Effect of buried diffusions.
48. Influence of depleted layers on the propagation characteristics and on the couplings in multilayer silicon ICs with buried diffusions.
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