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1. Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c -plane GaN/AlN quantum dots emitting in the UV range

Author

Pierre Gilliot, Mathieu Gallart, Marc Ziegler, M. Hrytsaienko, Raphaël Butté, Bernd Hönerlage, Olivier Crégut, Nicolas Grandjean, Sebastian Tamariz, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Ecole Polytechnique Fédérale de Lausanne (EPFL), Gilliot, Pierre, Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), and univOAK, Archive ouverte

Subjects
Photoluminescence, Materials science, excitons, Band gap, General Physics and Astronomy, Context (language use), 02 engineering and technology, 01 natural sciences, Molecular physics, Condensed Matter::Materials Science, Electric field, 0103 physical sciences, photons, Spontaneous emission, [PHYS.PHYS] Physics [physics]/Physics [physics], ComputingMilieux_MISCELLANEOUS, lifetime, 010302 applied physics, [PHYS.PHYS]Physics [physics]/Physics [physics], Relaxation (NMR), Time evolution, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], light, 0210 nano-technology
Abstract

International audience; c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recombination dynamics of photogenerated electron-hole pairs captured by such dots. Hence, in this work, we study the time-resolved photoluminescence (PL) properties in the low injection regime and at cryogenic temperatures of c-plane GaN/AlN QD ensembles emitting above the bulk GaN bandgap in order to properly understand the nature of the recombination channels behind the observed non-exponential decay time profiles. Such decays reveal the existence of a relaxation channel competing with the radiative recombination one. It is thus observed that for the former process the dynamics is independent of the dot height, which is attributed to a reversible nonradiative transfer that could be mediated by a spin-flip process to a dark-level state. The radiative recombination process is recognizable thanks to the characteristic dependence of its lifetime with the emission energy, which is well accounted for by the built-in electric field inherent to quantum nanostructures grown along the c-axis and the variations in the lateral confinement at play in such QDs. Those conclusions are drawn from the analysis of the time-evolution of the PL spectra by means of a simple analytical model that enables to exclude any screening of the built-in electric field.

Published
2021
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2. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Author

Denis Martin, Nicolas Grandjean, Camille Haller, Wei Liu, Raphaël Butté, J.-F. Carlin, Gwénolé Jacopin, Institute of Condensed Matter Physics [Lausanne], Ecole Polytechnique Fédérale de Lausanne (EPFL), SC2G - Semi-conducteurs à large bande interdite, Institut Néel (NEEL), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Université de Technologie de Compiègne (UTC), Centre de biophysique moléculaire (CBM), Université d'Orléans (UO)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Semi-conducteurs à large bande interdite (SC2G ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), light-emitting diodes, molecular-beam epitaxy, semiconductors, 02 engineering and technology, 01 natural sciences, law.invention, bulk gan, law, 0103 physical sciences, luminescence, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Wide-bandgap semiconductor, vacancies, 021001 nanoscience & nanotechnology, Semiconductor, efficiency, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, layers, Quantum efficiency, Dislocation, 0210 nano-technology, business, Molecular beam epitaxy, Light-emitting diode
Abstract

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high dislocation density running throughout the InGaN/GaN quantum well (QW) active region. This striking feature is currently ascribed to carrier localization occurring in the InGaN alloy, which hinders their diffusion toward dislocations. However, it was recently reported that another source of defects, disconnected from dislocations, dramatically decreases the radiative efficiency of InGaN/GaN QWs. Those defects, present at the surface, are usually trapped in an InGaN underlayer (UL), which is grown before the QW active region. To get insight into the trapping mechanism, we varied the UL thickness, In content, and materials system (InGaN or InAlN) and studied the photoluminescence decay time at 300 K of a single InGaN/GaN QW. Our data demonstrate that defects are incorporated proportionally to the indium content in the UL. In addition, we show that those defects are created during the high-temperature growth of GaN and that they segregate at the surface even at low-temperature. Eventually, we propose an intrinsic origin for these surface defects. (C) 2018 Author(s).

Published
2018

3. Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides

Author

Nicolas Grandjean, Raphaël Butté, Gordon Callsen, Gwénolé Jacopin, Catherine Bougerol, Jean-François Carlin, Joachim Ciers, Semi-conducteurs à large bande interdite (SC2G ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Ecole Polytechnique Fédérale de Lausanne (EPFL), Nanophysique et Semiconducteurs (NPSC), Institute of Condensed Matter Physics [Lausanne], and Institut de Physique de la Matière Condensée (EPFL)

Subjects
Materials science, Physics and Astronomy (miscellaneous), General Physics and Astronomy, 02 engineering and technology, Nitride, 7. Clean energy, 01 natural sciences, law.invention, Narrow bandwidth, law, Electric field, Lattice (order), 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Optical amplifier, [PHYS]Physics [physics], business.industry, High-refractive-index polymer, General Engineering, 021001 nanoscience & nanotechnology, Laser, Cladding (fiber optics), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

We demonstrate optically-pumped waveguides grown on freestanding GaN substrate featuring AlInN claddings and GaN/Al0.1Ga0.9N multiple quantum wells exhibiting narrow bandwidth (3.8 nm) optical gain around 370 nm. Due to the high refractive index contrast between the cladding layers and the active region, the confinement factor is as high as 48% and net modal gain values in excess of 80 cm−1 are measured. The results agree well with self-consistent calculations accounting for built-in electric field effects and high carrier density related phenomena. These results open interesting perspectives for the realization of more efficient near-UV lasers and optical amplifiers.

Published
2018

4. Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Author

Raphaël Butté, Nicolas Grandjean, Gordon Callsen, Jean-François Carlin, Ian Rousseau, Gwénolé Jacopin, Semi-conducteurs à large bande interdite (SC2G ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics [Lausanne], and Institut de Physique de la Matière Condensée (EPFL)

Subjects
Materials science, Passivation, General Physics and Astronomy, 02 engineering and technology, Nitride, 01 natural sciences, symbols.namesake, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Surface states, Diode, 010302 applied physics, business.industry, Fermi level, Photonic integrated circuit, 021001 nanoscience & nanotechnology, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business
Abstract

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm−1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Published
2018

5. Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Author

Bruno Gayral, Nicolas Grandjean, Christophe Durand, Jean-Paul Barnes, Catherine Bougerol, Joël Eymery, Jean-François Carlin, Damien Salomon, Raphaël Butté, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Synchrotron Radiation Facility (ESRF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Annealing (metallurgy), Multiple quantum, Bioengineering, quantum dots, UV emission, 02 engineering and technology, Nitride, Epitaxy, 01 natural sciences, MOVPE, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Nanotubes, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, nitride semiconductors, multiple quantum wells, Quantum dot, Optoelectronics, 0210 nano-technology, business, Nitride semiconductors
Abstract

Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a coreshell MQW heterostructure followed by in situ selective etching using controlled H-2/NH3 annealing at 1010 degrees C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.

Published
2017

6. Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

Author

J.-F. Carlin, Nicolas Grandjean, François Vurpillot, Raphaël Butté, Williams Lefebvre, Lorenzo Rigutti, E. Giraud, Lorenzo Mancini, Didier Blavette, D. Hernández-Maldonado, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)

Subjects
010302 applied physics, [PHYS]Physics [physics], Photoluminescence, Materials science, Alloy, General Physics and Astronomy, 02 engineering and technology, Atom probe, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Evaporation (deposition), law.invention, Condensed Matter::Materials Science, law, Electric field, 0103 physical sciences, engineering, Semiconductor alloys, Atomic physics, 0210 nano-technology, Ternary operation, Spectroscopy
Abstract

The ternary semiconductor alloy Al0.25Ga0.75N has been analyzed by means of correlated photoluminescence spectroscopy and atom probe tomography (APT). We find that the composition measured by APT is strongly dependent on the surface electric field, leading to erroneous measurements of the alloy composition at high field, due to the different evaporation behaviors of Al and Ga atoms. After showing how a biased measurement of the alloy content leads to inaccurate predictions on the optical properties of the material, we develop a correction procedure which yields consistent transition and localization energies for the alloy photoluminescence. (C) 2016 AIP Publishing LLC.

Published
2016

7. Polariton lasing in a hybrid bulk ZnO microcavity

Author

Georg Rossbach, Bernard Gil, Jesús Zúñiga-Pérez, Laurent Orosz, Raphaël Butté, Thierry Bretagnon, François Réveret, Fabrice Semond, Meletios Mexis, Nicolas Grandjean, Thierry Guillet, Joël Leymarie, Mathieu Leroux, Sophie Bouchoule, Jacques Levrat, Christelle Brimont, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institute of Condensed Matter Physics [Lausanne], Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR-06-BLAN-0135,ZOOM,Zinc Oxide Optical Microcavities(2006), European Project: 235114,EC:FP7:PEOPLE,FP7-PEOPLE-ITN-2008,CLERMONT4(2009), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Photon, Physics and Astronomy (miscellaneous), stimulated emission, Physics::Optics, 02 engineering and technology, semiconductor lasers, 01 natural sciences, Semiconductor laser theory, localised modes, Optical pumping, 0103 physical sciences, Zinc oxide, strong coupling, Polariton, Stimulated emission, light coherence, 010306 general physics, optical pumping, Physics, Condensed Matter::Quantum Gases, Condensed matter physics, wide band gap semiconductors, business.industry, Bose-Einstein Condensation, Condensed Matter::Other, nonlinear optics, Nonlinear optics, II-VI semiconductors, 021001 nanoscience & nanotechnology, microcavities, microcavity, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], microcavity lasers, polariton laser, Photonics, 0210 nano-technology, business, Lasing threshold, zinc compounds, polaritons
Abstract

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained at lasing threshold since the coherent nonlinear emission from the lower polariton branch occurs at zero in-plane wavevector well below the uncoupled cavity mode. The contribution of multiple localized polariton modes above threshold and the non-thermal polariton statistics show that the system is in a far-from-equilibrium regime, likely related to the moderate photon lifetime and in-plane photonic disorder in the cavity. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3650268]

Published
2011

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