13 results on '"G. Imbert"'
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2. Tuberculose après allogreffe de moelle: étude rétrospective multicentrique nationale sur 10 ans.
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de Trémiolles, G. Imbert, primary, Rouzaud, C., additional, Ranque, B., additional, Nguyen, S., additional, Brissot, E., additional, Redjoul, R., additional, Suarez, F., additional, Lanternier, F., additional, Lortholary, O., additional, and Lafont, E., additional
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- 2023
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3. Tuberculose après allogreffe de moelle: étude rétrospective multicentrique nationale sur 10 ans
- Author
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G. Imbert de Trémiolles, C. Rouzaud, B. Ranque, S. Nguyen, E. Brissot, R. Redjoul, F. Suarez, F. Lanternier, O. Lortholary, and E. Lafont
- Published
- 2023
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4. Effect of accelerated hydrothermal aging on the durability of Si-based dielectric thin films
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S. Rubeck, V. Cartailler, V. Coutellier, G. Imbert, S. Gallois-Garreignot, S. Meille, P. Steyer, and J. Chevalier
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Electrical and Electronic Engineering ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials - Published
- 2022
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5. Dielectrics stability for intermediate BEOL in 3D sequential integration
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Claire Fenouillet-Beranger, Maud Vinet, Virginie Beugin, Névine Rochat, Vincent Jousseaume, Perrine Batude, Daniel Benoit, Christophe Licitra, F. Deprat, N. Rambal, G. Imbert, Véronique Caubet-Hilloutou, and Chloé Guerin
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Materials science ,Nanotechnology ,02 engineering and technology ,Dielectric ,01 natural sciences ,law.invention ,Barrier layer ,Stack (abstract data type) ,law ,Ellipsometry ,0103 physical sciences ,Thermal stability ,Electrical and Electronic Engineering ,Fourier transform infrared spectroscopy ,010302 applied physics ,Interconnection ,business.industry ,Transistor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Optoelectronics ,0210 nano-technology ,business - Abstract
3D sequential integration, such as CoolCubeź, allows to stack vertically layer of devices. Levels of interconnection, also called intermediate Back-End-Of-Line, are needed between successive layers of transistors to avoid routing congestion. Thus, thermal stability of the dielectrics must be studied in order to fulfil the CoolCubeź requirement: at least to be stable up to 500°C during 2h. Consequently, the stability of several barrier layers and oxide based materials has been studied through optical characterizations (ellipsometry, Fourier Transform InfraRed spectroscopy and ellipsometric-porosimetry). SiCO (k=4.5), in replacement of standard SiCNH (k=5.6) material as barrier layer seems very promising. Regarding the inter-layer dielectric stability, the state-of-the-art porous SiOCH (k=2.5) stays suitable for a thermal budget of 500°C, 2h. Display Omitted
- Published
- 2017
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6. 32nm node BEOL integration with an extreme low-k porous SiOCH dielectric k=2.3
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D. Galpin, Alexis Farcy, E. Richard, P. Brun, G. Imbert, Jonathan Pradelles, Vincent Jousseaume, M. Assous, B. Icard, Daniel Barbier, C. Jayet, C. Monget, Sonarith Chhun, Michel Haond, Sylvain Maitrejean, Vincent Arnal, J. Guillan, S. Manakli, K. Hamioud, and Aziz Zenasni
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Materials science ,business.industry ,Copper interconnect ,Low-k dielectric ,Dielectric ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Chemical-mechanical planarization ,Trench ,Forensic engineering ,Optoelectronics ,Node (circuits) ,Metallizing ,Electrical and Electronic Engineering ,Porosity ,business - Abstract
A 32nm node BEOL integration scheme is presented with 100nm metal pitch at local and intermediate levels and 50nm via size through a M1-Via1-M2 via chain demonstrator. To meet the 32nm RC performance specifications, extreme low-k (ELK) porous SiOCH k=2.3 is introduced at line and via level using a Trench First Hard Mask dual damascene architecture. Parametrical results show functional via chains and good line resistance. Integration validation of ELK porous SiOCH k=2.3 is investigated using a multi-level metallization test vehicle in a 45nm mature generation.
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- 2010
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7. Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond
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Laurent-Luc Chapelon, K. Hamioud, Joaquim Torres, P. Brun, M. Vilmay, H. Chaabouni, G. Imbert, Alexis Farcy, M. Mellier, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Clot, Marielle
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Materials science ,business.industry ,Copper interconnect ,Low-k dielectric ,02 engineering and technology ,Dielectric ,RC time constant ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Chemical-mechanical planarization ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS ,Delay time - Abstract
Deposited on a porous a-SiOC:H intermetal dielectric (IMD), a dense a-SiOC:H cap was successfully integrated in a C45 dual damascene architecture. The paper demonstrates that, stopping the CMP with around 10nm of the cap left, the IMD integrity is preserved. As a consequence, a 3.5% decrease in RC delay, a 7.3% decrease in IMD integrated k-value and an increase of the time to failure by a 100 factor are reached relative to direct CMP. The cap also allowed to achieve straight lines and to improve the lines height uniformity as if CMP stopped on the IMD.
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- 2008
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8. Modification of porous ultra-low K dielectric by electron-beam curing
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Eugénie Martinez, Christophe Licitra, G. Imbert, Nevine Rochat, Cyril Guedj, and Vincent Arnal
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Materials science ,Physics::Optics ,Mineralogy ,Low-k dielectric ,Dielectric ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Cathode ray ,Electron beam processing ,Physics::Accelerator Physics ,Irradiation ,Electrical and Electronic Engineering ,Composite material ,Safety, Risk, Reliability and Quality ,Porosity ,Chemical composition ,Curing (chemistry) - Abstract
The impact of electron irradiation on ultra-low K (ULK) porous dielectric material used in advanced interconnects is analyzed using spectroscopic and electrical characterizations. The e-beam irradiation modifies the chemical composition, the porosity and the optical indexes. The effects of e-beam curing on electrical properties and dielectric reliability are also evaluated.
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- 2007
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9. Material and electrical characterization of TMS-based silicidation of the Cu-dielectric barrier interface for electromigration improvement of 65nm interconnects
- Author
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E. Sabouret, L. Plantier, Aurelie Humbert, D. Delille, M. Sardo, K. Junker, S. Jullian, V. Girault, G. Imbert, and Y. Le Friec
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Copper silicide ,business.industry ,Analytical chemistry ,Dielectric ,Chemical vapor deposition ,Condensed Matter Physics ,Silane ,Electromigration ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Plasma-enhanced chemical vapor deposition ,Silicide ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Leakage (electronics) - Abstract
The formation of a copper silicide interfacial layer by surface reaction in a plasma enhanced chemical vapour deposition (PECVD) system has been studied. Tri-methyl silane (TMS, SiH(CH"3)"3) has been employed as the Si source as an alternative to more conventional silane (SiH"4) approach. TMS precursor has been chosen due to improved control of Si penetration into the copper [S. Chhun, L.G. Gosset, N. Casanova, J.F. Guillaumond, P. Dumont-Girard, X. Fedespiel, R. Pantel, V. Arnal, L. Arnaud, J. Torres, Microelectronic Engineering 76 (2004) 106-112]. AFM, SIMS, light scattering, FT-IR spectroscopy and dielectric constant measurements were performed on various stacks to evaluate CuSiN formation. Resistance, leakage, and electromigration (EM) reliability characterization were performed on test structures based on 65nm design rules. Nitridation step in silicidation process was shown to have positive impact on EM reliability, minimizing the line resistance increase.
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- 2006
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10. Causative organisms of infective endocarditis according to host status
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Jean-Paul Casalta, Jean-Louis Bonnet, Didier Raoult, Thierry Messana, A. Boulamery, G. Imbert, Gilbert Habib, Ethan Rubinstein, and K. Barrau
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Adult ,Male ,Microbiology (medical) ,medicine.medical_specialty ,Prosthesis-Related Infections ,Adolescent ,Epidemiology ,Heart Valve Diseases ,medicine.disease_cause ,Microbiology ,Age Distribution ,Coxiella ,host status ,Streptococcal Infections ,Mitral valve ,Prevalence ,medicine ,Humans ,Endocarditis ,Prospective Studies ,Sex Distribution ,Aged ,Aged, 80 and over ,biology ,infective endocarditis ,business.industry ,Endocarditis, Bacterial ,General Medicine ,Middle Aged ,Staphylococcal Infections ,Coxiella burnetii ,biology.organism_classification ,medicine.disease ,Streptococcus bovis ,Gram-Positive Cocci ,medicine.anatomical_structure ,Infectious Diseases ,Staphylococcus aureus ,Aortic Valve ,Heart Valve Prosthesis ,Infective endocarditis ,Etiology ,Mitral Valve ,Female ,business - Abstract
A prospective study of infective endocarditis (IE) was conducted between 1994 and 2000 in Marseilles, France, and included 170 definite cases diagnosed with the use of modified Duke criteria. Classification of IE based on the aetiological agent was related to epidemiological characteristics, including age, gender and the nature of the injured valve. Enterococci and Streptococcus bovis were identified more frequently in older subjects (p 0.02), and S. bovis was also associated with mitral valve infection (p 0.03). Streptococcus spp. were found to be associated with native valves (p < 10−3), whereas coagulase-negative staphylococci and Coxiella burnetii were associated with intracardiac prosthetic material (p
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- 2004
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11. The origins of hydrocarbons trapped in the lake of berre sediments
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G. Imbert, M. Guiliano, Pierre Doumenq, D. Munoz, Y. Le Dréau, Frédéric Jacquot, and G. Mille
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Pollution ,chemistry.chemical_classification ,Environmental Engineering ,Health, Toxicology and Mutagenesis ,media_common.quotation_subject ,Public Health, Environmental and Occupational Health ,Biogeochemistry ,Sediment ,General Medicine ,General Chemistry ,Sedimentation ,chemistry.chemical_compound ,Hydrocarbon ,chemistry ,Abundance (ecology) ,Environmental chemistry ,Environmental Chemistry ,Environmental science ,Petroleum ,Organic matter ,media_common - Abstract
For decades, the Lake of Berre (France) - a heavily contaminated ecosystem - has received hudge amounts of hydrocarbons from refineries, petrochemical plants, transportation systems, in addition to those originating from marine and terrestrial biogenic inputs. The purpose of this work was to identify the sources of hydrocarbons trapped in the sediment, using characterization indices, based on n-alkane and isoprenoid abundance ratios obtained from GC/MS analysis. The upper sediment was sampled from 5 widely-separated stations. In each station, the subsurface (0–10 cm) and the underlaying (10–20 cm) sediment were separately analyzed by gravimetry, GC/FID and GC/MS. Total hydrocarbon contents ranged from 63 to more than 6100 mg.kg−1 1 of dry sediment. Qualitative analysis of the saturated hydrocarbon fraction demonstrated the presence of weathered petroleum residues of mixed geochemical origins, as evidenced by the presence of different cyclic alkanes known as biomarkers. Total polyaromatic hydrocarbon contents ranged from 29 to more than 2300 mg.kg−1 1 of dry sediment, associated with molecular indexes suggesting the occurence of combustion processes prior to sedimentation. Petrogenic, pyrolitic, and biogenic sources were discriminated, with reference to previous surveys of the same area or of adjacent areas. With regard to biogenic hydrocarbons, terrestrial sources seem generally predominate, except in the Northwestern area where n-alkane and isoprenoid abundance ratios are more characteristical of organic matter from a marine origin.
- Published
- 1999
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12. P73 Représentations de la maladie chez les diabétiques de type 2 et compétences culturelles du clinicien
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G. Imbert
- Subjects
Endocrinology ,Endocrinology, Diabetes and Metabolism ,Internal Medicine ,General Medicine - Abstract
Objectif Identifier et analyser les representations de la maladie aupres de personnes autochtones porteuses du diabete de type 2. Materiels et methodes Dans le cadre de cette recherche qualitative, des entretiens semi-directifs approfondis ont ete conduits au domicile de 30 personnes diabetiques de type 2 autochtones interrogees dans leur langue maternelle. S’inscrivant dans une perspective culturaliste interpretative et s’inspirant d’un modele semiologico-phenomenologique, le contenu des recits traduits en francais a ete analyse afin de saisir l’univers de sens que les patients ont construit autour de cette maladie. Resultats L’analyse du materiel empirique permet de cartographier les representations de la maladie des patients selon trois axes : l’axe semantique (celui du sens), l’axe semiologique (celui des signes) et l’axe phenomenologique (celui de l’experience vecue). Le decodage des reseaux semantiques met notamment en lumiere le role majeur joue par la cause que les patients attribuent au diabete. Cette derniere peut ainsi constituer le point d’ancrage du deni de leur maladie et expliquer, en partie, l’echec de la prise en charge therapeutique par les cliniciens. Enfin, ces resultats illustrent de maniere exemplaire, le mode de reinterpretation des messages de prevention produits par les cliniciens et leur impact sur le comportement du patient vis-a-vis de sa maladie, notamment en termes d’effets contraires, invitant ainsi les cliniciens a repenser differemment leurs pratiques professionnelles. Conclusion En contribuant a l’amelioration de la comprehension des barrieres a l’observance therapeutique de patients autochtones diabetiques de type 2, ces travaux en anthropologie medicale soulignent l’importance de l’integration des facteurs socioculturels dans la prise en charge medicale des patients. Dans cette perspective, cette etude constitue une base de reflexion pertinente ouvrant sur l’exploration de la question des competences culturelles des cliniciens.
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- 2008
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13. Raman spectrum of a layer or thin slice at a solid interface
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M. Menetrier, R. Dupeyrat, G. Imbert, and Yves Levy
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Materials science ,business.industry ,Interface (computing) ,Dielectric ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Metal ,Condensed Matter::Materials Science ,symbols.namesake ,Optics ,Homogeneous ,visual_art ,Luminous energy ,visual_art.visual_art_medium ,symbols ,Wafer ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,business ,Raman spectroscopy ,Layer (electronics) - Abstract
If we use an experimental device with one plane parallel dielectric film and one plane parallel metallic film between two transparent media, we can amplify the luminous energy (homogeneous or inhomogeneous waves) in the dielectric medium, and obtain the Raman spectrum of the film or of a thin slice of 1000 A thickness.
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- 1977
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