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Transparent flexible display devices have attracted massive attention in recent years owing to their practical applications that can be compatibly adapted to human demand and technological development. Worldwide researchers have studied flexible transparent thin film transistors (TFTs) to qualify them for the backplane component of future transparent and flexible displays. Simplifying the fabrication process of a TFT can be considered a critical need for reducing consumed cost, time, toxic chemicals. In this study, sputtering was utilized as a major fabrication method for manufacturing a transparent oxide TFT device, which demonstrated good mechanical flexibility. A simple surface treatment process was applied to enhance the susceptibility of the sputtered Al 2 O 3 dielectric through multiple coatings of solution processed Al 2 O 3. It is noteworthy that the transparent oxide TFT device exhibits a high optical transparency of 81.12% and good electrical switchability at low operating voltage (3 V) with a decent mobility of 4.37 cm2 V−1 s−1 and proven mechanical durability. [ABSTRACT FROM AUTHOR]

Here, we report room temperature deposition of nickel oxide (NiO) thin films on silicon and glass substrates by direct current (dc) magnetron sputtering using a metallic nickel target. The effect of sputtering power (20 W, 25 W, and 30 W) on the thin films, their surface scaling, fractal dimension, and optical properties are extensively investigated. Autocorrelation and height–height correlation functions were applied to AFM images to extract deep insights about the thin films' surfaces. Fractal dimension (D f) was extracted through the power spectral density (PSD) function. Various scaling exponents, including α, β, and 1/z, of the NiO film's surface were independently observed. The local roughness exponent, α, was approximately 0.81 for films deposited with 20 W sputtering power and decreased to 0.71 with higher sputtering power. The interface width (σ) scales with sputtering power (Sp) as ∼ Spβ, with a growth exponent (β) value of 1.17. The lateral correlation length (ξ) follows as ∼ Sp1/z with a 1/z value of 0.703. Additionally, optical parameters were recorded through UV–Vis. optical spectroscopy, and an attempt was made to correlate them with fractal parameters (D f & α). Optical absorption (reflection) increased (decreased) with increasing D f values. The minimum (maximum) reflection (absorption) was observed on the roughest surface (D f = 2.29). The calculated band gap decreased with increasing fractal dimension. This investigation suggests that sputtered surfaces with minimal reflectivity, band gap, and enhanced light-absorbing capacity could potentially be used as active solar layers for advanced optoelectronic devices. [ABSTRACT FROM AUTHOR]

In today's modern world, energy consumption continues to escalate. In such cases, smart windows play a crucial role in reducing energy consumption and enhancing the quality of life. Electrochromic devices (ECDs) -based smart windows rely profoundly on nickel oxide (NiO) thin films, which act as a counter electrode in ECDs. This work aims to fabricate NiO thin films, with the intention of achieving ultrafast ECD. Through the sputtering technique, energy-efficient ECD is obtained with the highest optical modulation of 60 % at a rapid switching speed of 0.55s for bleaching and 0.95s for coloration. We have also investigated the structural, morphological, vibrational, and optical properties of NiO thin films. XRD analysis revealed the less crystalline or near amorphous nature of NiO thin film. XPS, PL, and Raman studies confirm the existence of defects in the film. The favourable, less crystalline nature, along with the presence of defects, facilitates ultra-fast ion intercalation and de-intercalation process. We believe that prepared NiO film can be used as a promising anodic colourant in electrochromic smart windows with applications in energy-efficient buildings. [ABSTRACT FROM AUTHOR]

Large-area electrochromic films with high stability under high temperatures and humid conditions are essential for the commercialization of smart windows. In this paper, we introduce a new cathodic coloration Nb 18 W 16 O 93 thin film produced using sputtering that exhibits excellent electrochromic modulation, superior chemical stability, and cyclic durability owing to its stable host structure for ion intercalation. The electrochemical properties of the as-grown Nb 18 W 16 O 93 thin films, including charge density and transmittance modulation, were enhanced with increasing deposition temperatures. The annealed Nb 18 W 16 O 93 thin films (grown at room temperature) exhibited comparable electrochromic performances to films grown at high temperatures. Electrochromic devices composed of annealed and high-temperature-grown Nb 18 W 16 O 93 thin films exhibited excellent durability and nearly identical transmittance modulation, even after 10,000 test cycles. Furthermore, degradation of the surface morphology of the Nb 18 W 16 O 93 thin films after etching in heated water was alleviated, suggesting high stability under hot and humid conditions, whereas the flat surface of the room-temperature-grown WO 3 thin films degraded significantly. [ABSTRACT FROM AUTHOR]

This study was focused on unraveling the close dependence of the structural, morphological, and thermoelectric properties of sputtered ZnO films on base pressure. The ZnO film deposited at an optimized base pressure of 5 × 10−6 torr exhibited the highest thermoelectric power factor of 374.6 μW/mK2, corresponding to an electrical conductivity of 265 S/cm and a Seebeck coefficient of −124 μV/K at 583 K. The obtained results revealed that the positive effect of base pressure on enhancing thermoelectric properties of ZnO films is attributed to point-defect modification, including zinc vacancies, singly-, and doubly-charged oxygen vacancies. Based on these results, we propose that defect engineering is a facile and effective approach for improving the thermoelectric behavior of ZnO films, even without doping by controlling the sputtering conditions. [Display omitted] [ABSTRACT FROM AUTHOR]

NiTi alloys are actively used in medicine as implants because of their mechanical properties. At the same time, however, the NiTi surface is not biologically active, which has a negative effect on osteogenesis. In addition, Ni is capable of causing various toxic reactions in the human body. It is therefore necessary to create a composite coating that is both bioactive and prevents the release of Ni ions. It has been shown that by changing the modes of plasma assisted RF sputtering of a calcium phosphate target, it is possible to obtain coatings with different contents of the amorphous phase. The coatings formed consist of hydroxyapatite and amorphous calcium phosphate. On the surface of a sample not treated with argon plasma, there are no phases containing calcium or phosphorus, although these elements are present on the surface. The different ways in which the CaP coatings were applied also affected their structure. It was found that the CaP coatings of samples M2 and M3 have mediocre corrosion resistance, dissolving quickly. This has a positive effect on the ability to osteogenesis, which was discovered as a result of in vitro tests. These tests have shown that the sample obtained at I discharge = 30 A and U bias = 30 V has the highest bioactivity and produces the lowest percentage of dead cells. [ABSTRACT FROM AUTHOR]

Electrochromic devices (ECDs) based on tungsten trioxide (WO 3) have garnered significant attention in the areas of smart windows, dynamic display, low-power displays, and in other advanced sectors. The electrochromic property of WO 3 is primarily influenced by both electron conduction and ion diffusion processes. This research investigates on the influence of rapid thermal annealing (RTA) on the electrochromic performance of RF sputtered tungsten oxide thin films, which relies on ion diffusion process. RTA treated film showed a mixture of amorphous and crystalline (monoclinic), heterostructure phase. Structural, compositional, electrical, optical, morphological, and electrochromic studies were carried out using various techniques. Based on the electrochromic analysis, WO 3 thin films, RTA treated at 300°C showed higher diffusion coefficient with larger optical modulation (ΔT) of 80 % due the formation of heterostructure with more oxygen vacancies. We hope that this research could propose the possibility for developing high-performance electrochromic smart windows. [ABSTRACT FROM AUTHOR]

This work explores the use of air as a reactive gas in the sputtering deposition of N-doped TiO 2 -based bilayer, gradient, and multilayer thin films for photoelectrochemical evaluations. By merely adjusting the air/Ar flow ratio, crystalline phases, nitrogen doping contents, electrical properties, optical bandgaps, and valence band maximum (VBM) positions of N–TiO 2 films were tailored. The N–TiO 2 /TiN(O) bilayer on the glass substrates exhibited a peak photocurrent density of 776 μA cm−2 at an air/Ar ratio of 1.60, which may be due to suitable bandgap and carrier mobility of the TiO 2 overlayer as the bandgap was affected by the nitrogen content and rutile fraction in the TiO 2 overlayer. To further improve the performance of N–TiO 2 , stepwise and sequential gradient structures with gradient bandgaps and nitrogen contents were produced, which could reach photocurrent densities of 805 ± 4 and 837 ± 3 μA cm−2, respectively. The gradient structures lead to enhanced light absorption efficiency and reduce carrier recombination. The N–TiO 2 /TiN(O) multilayer structures were also designed and revealed the highest photocurrent density of 865 ± 7 μA cm−2. Such evident enhancement is mainly due to the thin conductive while translucent TiN(O) layers between the photoelectrochemical-active N–TiO 2 layers provide multiple low-impedance channels in enhancing carrier transport. [Display omitted] • N–TiO 2 -based bilayer, gradient, and multilayer films were made by air sputtering. • Enhancements of photocurrents were achieved via gradient and multilayer designs. • N–TiO 2 gradient films with N-gradients were produced by varying air/Ar ratios. • Multiple thin translucent TiN(O) films provide low-impedance paths in the multilayer. • Obtained highest photocurrent density was 865 ± 7 μA cm−2. [ABSTRACT FROM AUTHOR]

Li–Al–O thin films synthesized via the reactive magnetron co-sputtering have the potential to act as solid-state electrolytes in micro-batteries. In this paper, the constant RF power (155 W) and variable DC power (20–50 W) were applied to lithium (Li) and aluminum (Al) metal targets, respectively, in Ar/O 2 atmosphere to produce films with adequate ionic conductivity. The influence of DC sputtering power on the composition, microstructure, band gap energy, ionic conductivity, and dielectric loss of films were studied in detail. X-ray photoelectron spectroscopy (XPS) showed a shift of the Li 1s peak towards higher binding energy with increasing DC power. X-ray diffraction (XRD) spectra confirmed the amorphous state for all as-deposited films, while the post-annealed films at 950 °C contain the γ-LiAlO 2 phase. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) images revealed that the increasing DC power had a significant impact on the film morphology, enlarging grain size and increasing surface roughness. Energy dispersive X-ray (EDX) spectroscopy showed that increasing the DC power increased the Al content. The optical properties were examined by ultraviolet–visible (UV–vis) spectroscopy, which indicated that increasing the Al content led to a blue shift of the absorption edge and an increase in the band gap energy (5.40–5.68 eV). Increasing the DC power resulted in an improvement of room-temperature conductivity by two orders of magnitude (∼2.85 × 10−9 S cm−1) and a decrease in the activation energy from 0.54 eV to 0.32 eV. These results suggest that composition and microstructure significantly affect the ionic transport in co-sputtered Li–Al–O films. [ABSTRACT FROM AUTHOR]

An excellent corrosion-resistant and good conductivity coating is desired for metal bipolar plate (BP) in proton exchange membrane fuel cell (PEMFC). In this view, a novel strategy to achieve this aim by introducing Al 2 O 3 into CrN film. Al 2 O 3 /CrN nanocomposite coatings are first prepared by co-sputtering. Subsequently, the microstructure, electrochemical corrosion resistance, interfacial contact resistances (ICR) and contact angle are systematically investigated. As a result, Al 2 O 3 /CrN nanocomposite coating shows a low corrosion current density of 0.084 μA/cm2 in room temperature and a low corrosion current density of 0.39 μA/cm2 at 70 °C, which highly meets the requirement of U.S. DOE 2025 targets. Besides, Al 2 O 3 /CrN nanocomposite coating displays a superior durability to pure Au film. It is revealed that Al 2 O 3 can hinder the growth of CrN columnar crystals and result in coating amorphization, which is the mechanism of Al 2 O 3 -promoted the CrN corrosion resistance. Furthermore, Al 2 O 3 /CrN coating also exhibits an excellent electrical conductivity, featuring a smaller ICR of 3.09 mΩ cm2. Inspired by these results, introducing Al 2 O 3 into CrN coatings can provide enlightening insights to design new non-noble-metal coatings for metal BP in future PEMFC manufacturing. Al 2 O 3 can hinder CrN columnar crystals growth and results in a high-performance Al 2 O 3 /CrN nanocomposite coating for metal bipolar plates in PEMFC. [Display omitted] • Al 2 O 3 /CrN coatings are first prepared to protect metal bipolar plates in PEMFCs. • Al 2 O 3 /CrN coated Ti plates shows a low corrosion current density of 0.084 μA/cm2. • The ICR value of Al 2 O 3 /CrN coated Ti plates is 3.09 mΩ cm2 under 150 N/cm2. • Al 2 O 3 /CrN coating shows a more excellent durability than pure Au film. • Al 2 O 3 incorporation can hinder the columnar crystals growth of CrN. [ABSTRACT FROM AUTHOR]

The resistive switching (RS) behavior of multilayered ReRAM devices is typically influenced by two aspects: the intrinsic properties of the dielectric multilayer, and other extrinsic contributions. In this study, we deposited and investigated bi-layered memories incorporating ZnO and HfO 2 dielectrics. Different stacking sequences of the two oxides (ZnO/HfO 2 and HfO 2 /ZnO) were employed to explore the intrinsic contribution of the bilayer microstructure, while different top electrode configurations (Pt and Ti) were utilized to demonstrate the extrinsic impact. All devices exhibit characteristic bipolar RS behavior, showcasing their functionality. But interestingly, the device with a Pt top electrode displays digital RS behavior, while the one with a Ti top electrode exhibits analog RS behavior. The completely different switching types observed during the reset process of the ZnO-HfO 2 hybrid resistive memories are attributed to different interface charge migration process and structural characteristic. And as compared to the tailoring effect of stacking sequences (bilayer microstructure and oxide/oxide interface), the tailoring effect of top electrode configuration (electrode materials and oxide/electrode interface) is much stronger. Based on the latter, the switching ratio can be remarkably improved by at least two orders of magnitude, the reset voltage (energy consumption) can also be significantly reduced, and other discussed switching parameters can also show greater improvement. The comprehensive comparative analysis of intrinsic and extrinsic contributions provides valuable insights for exploring the RS mechanism and optimizing the design of bi-layered memory devices. [ABSTRACT FROM AUTHOR]

In the literature, a magnetic "easy" axis perpendicular to the film plane at room temperature (i.e., perpendicular magnetic anisotropy - PMA) has been reported in Ni (nickel) layers with thicknesses below ≈15 nm. In this work, we observed room-temperature PMA in a-Si/Ni/a-Si (where a-Si denotes amorphous silicon) thin film structures with nickel layer thicker than 15 nm. Two layered structures were prepared by DC/RF triode sputtering: [a-Si/Ni/a-Si] sandwich structure and [a-Si/Ni/a-Si] 5 multilayer structure. The cross sectional STEM revealed uniform Ni layers with thicknesses of ≈17 nm in [a-Si/Ni/a-Si] 5 – multilayer and ≈28 nm in [a-Si/Ni/a-Si] – single-layer whereas amorphous Si layers were ≈15 nm and 170 nm thick, respectively. An amorphous Ni–Si interphase was also observed in the layered structures. The XRD showed patterns for fcc-Ni with dominant (111) orientation. No other crystalline phases were observed in the XRD patterns. To our knowledge, there are no literature reports of easy magnetization direction perpendicular to the film plane at room temperature for Ni layers with thickness of ≈28 nm as presented in this work. The origin of PMA in a-Si/Ni/a-Si films may be mainly attributed to the magnetoelastic anisotropy whereas the secondary source of PMA is believed to be the surface anisotropy and magnetocrystalline anisotropy of [111] columnar grains. Amorphous silicon layers (substrate) do not have a well-defined lattice structure like crystalline substrates. Therefore, they do not induce strains in the nickel layers through lattice mismatch as in the case of epitaxy. The strains can be caused by other factors such as diffusion-induced strain, thermal expansion mismatch or intrinsic stresses during the growth process. These results could be important for applications in memory devices, sensors, logic chips, magneto-optic, magneto-electronic and spintronic devices and in fundamental research, as well as first step toward preparation and understanding of the PMA in thick nickel layers. [ABSTRACT FROM AUTHOR]

The use of colorful solar cells is necessary for building-integrated photovoltaic (BIPV) applications in urban areas, where aesthetics play an important role. The conventional deposition process of multilayer color filters utilized in solar cells for BIPV applications is expensive because it requires multiple sputter targets. Herein, to address the issue of high cost, a single sputter target was used to produce a color filter consisting of a Zn-based multilayer structure. The oxygen content in the Zn(O,S) films could be controlled by adjusting the amount of oxygen gas supplied during the sputtering process. This allows for control of the optical properties of the films, including the refractive index and extinction coefficient. A color filter with the Zn(O 0.92 ,S 0.08)/ZnS structure repeated three times was applied to Cu(In,Ga)Se 2 thin-film solar cells; the resulting solar cell demonstrated a wide range of color expressions and less than 10% reduction in optical performance. The proposed technology is expected to significantly reduce the cost of optical filter processes and their applications. [ABSTRACT FROM AUTHOR]

Zinc oxide semiconductors have received significant research attention over the past decade owing to their diverse applications. In this paper, we report the development and characterisation of ZnO thin films prepared by radio-frequency (RF) magnetron sputtering. The optical, anti-icing, wettability, and structural properties of the films were investigated at various sputtering power levels and temperatures. With an increase in the power from 175 to 250 W, the ZnO thin films showed fine (002) structures. X-ray diffraction analysis of the coated thin films revealed a considerable increase in the (002) peak intensity along the c-axis with increasing power and temperature. Increasing the sputtering power from 175 to 250 W and the deposition temperature from 150 to 300 °C led to an increase in the average size of the grains from 10.548 to 13.151 nm and from 9.97 to 13.151 nm, respectively. The water contact angle possibly depends on the RF power and temperature employed for material deposition. Within the 350–800 nm range, the prepared films achieved optical transmissions of 92%–88%, refractive indices of 1.52–1.50, and band gaps of 3.28–3.24 eV. The anti-icing properties were also improved by adjusting the sputtering power and temperature during material deposition. [ABSTRACT FROM AUTHOR]

AlCrTiN coatings were obtained by radio frequency magnetron sputtering and deposited on aluminum-silicon alloy substrates (A4032). The microstructure, morphology and chemical composition of the coatings were analyzed by X-ray diffraction, Transmission Electron Microscopy, Scanning Electron Microscopy, Energy Dispersive X-ray spectroscopy, and X-ray Photoelectron Spectroscopy. The effect of nitrogen flow on hardness, wear resistance, and adhesion was investigated and correlated with the microstructure of the samples. The coatings crystallized in a hexagonal Wurtzite structure with preferential growth on the (002) direction. With increasing nitrogen flow, a decrease of the crystallite size is observed. The mechanical properties of AlCrTiN coatings on an aluminum-silicon alloy showed characteristics of interest for industrial applications: the coated substrates showed better hardness (around of 10.5 GPa), improved wear resistance (COF ∼0.3) and increased fracture toughness (H3/E2 around 0.23), compared to the uncoated substrate (1.41 GPa, 0.42, and 0.0014, respectively). [ABSTRACT FROM AUTHOR]

Titanium oxynitride (TiN x O y) thin films exhibiting tunable physical and chemical properties can be used in many fields. Air-based sputtering deposition of the films with diverse O/N ratios was employed to produce gradient and multilayer films. By solely altering the air/Ar flow ratio, obtained TiN x O y films could change from a crystalline to a mainly amorphous feature. Moreover, the carrier concentration, Hall mobility, and hence resistivity of the films could be modified to a large range. The optical bandgaps of the films could also be tailored to a wide extent. Based on these results, the gradient TiN x O y layer and TiN x O y /TiN(O) multilayer were also deposited on TiN(O)-coated glass substrates for the assessment of photoelectrochemical performance. Compared with the TiN x O y /TiN(O) bilayer with the best photoelectrochemical performance, the photoelectrochemical currents of gradient TiN x O y films could be improved from 99 ± 2 μA⋅cm−2 to 164 ± 2 μA⋅cm−2 by taking advantage of bandgap engineering. Additionally, the photoelectrochemical currents of TiN x O y /TiN(O) multilayer were further improved to 175 ± 6 μA⋅cm−2. This is mainly due to conductive nano TiN(O) layers providing multiple high-transport paths while allowing light transmission. The enhancement mechanisms of the gradient and multilayer films have also been elaborated. [ABSTRACT FROM AUTHOR]

• Optimisation for poly-Si passivating contacts prepared by sputtering and ex-situ diffusion. • The difference in performance between POCl 3 diffusion and spin-on doping is due tocrystallinity and diffusion mechanism. • With POCl 3 diffusion: an i V oc of ∼720 mV, a J 0 of 2.6 fA/cm2 after a hydrogenation, and a contact resistivity ρ c of less than 10 mΩ.cm2 were achieved. • Quokka3 simulations show that cell efficiencies as high as 25% are possible using the optimised passivating contacts. We present ex-situ phosphorus-doped polycrystalline silicon (poly-Si) passivating contacts fabricated by the physical vapour deposition method, specifically sputtering. This technique is currently of great interest to the photovoltaics (PV) community due to its low deposition temperature, small footprint, high throughput, and use of low-hazard, solid targets and gases. We optimise the performance of the passivating contacts by adjusting various parameters from the sputtering of amorphous Si films to the formation of the poly-Si layers by a high-temperature thermal diffusion (with phosphorus oxychloride – POCl 3 , or phosphorus spin-on glass as the dopant sources). For the case of POCl 3 diffusion, a high iV oc of ∼720 mV together with a low J 0 of 2.6 fA/cm2 after a hydrogenation treatment by atomic layer deposition (ALD) AlO x and forming gas annealing (FGA), and a low contact resistivity ρ c of less than 10 mΩ cm2 were achieved. Meanwhile, with spin-on doping, a low average iV oc of ∼600 mV was observed. This variation in performance could be explained by the difference in the crystallinity and the diffusion mechanism of the sputtered Si films after different subsequent thermal diffusion processes. Quokka3 simulations show that cell efficiencies as high as 25% are possible using the optimised passivating contacts. The results demonstrate the potential of these PVD poly-Si films as a promising candidate for future industrial solar cells. [ABSTRACT FROM AUTHOR]

[Display omitted] • Films on electropolished substrates have higher absorbances and are more homogeneous. • By combining absorbance and emittance, passivation results in greater solar selectivity. • SiO 2 deposition on Mo films increased their absorbances. • The SiO 2 layer increased the surface roughness of the coatings. • The SiO 2 layer improved the surface homogenization of the films. The thermal performance of solar collectors depends on the selective coverage over their absorbing plate, known as selective surfaces, which determines the heat gain and loss of the equipment. Different materials and layering arrangements can be used for the production of selective surfaces. This work proposes the production of selective surfaces of molybdenum (Mo) and silica (SiO 2) evaluating the influence of the type of substrate treatment (chemical cleaning, passivation and electropolishing) on this performance. The results obtained in UV–Visible and Near Infrared Spectrophotometry showed that the surface absorptance is higher for Mo and Mo/SiO 2 films on electropolished surfaces compared to treatments with acid and hexane. The highest absorptance reached was 98.10% for a Mo/SiO 2 film (45.023 nm), on electropolished substrate. However, the highest solar selectivity was obtained from the Mo/SiO 2 film on a passivated substrate. X-ray diffraction (XRD) exhibited peaks characteristic of the metallic Mo phase, and the presence of silica in the amorphous and crystalline phases in the form of quartz was also verified. The results obtained in Optical Profilometry and Atomic Force Microscopy (AFM) indicate that the absorptance of the samples is influenced by the roughness of the substrates. [ABSTRACT FROM AUTHOR]

A smart window based on VO 2 is a promising thermochromic (TC) glass that can regulate heat flow through windows by solar modulation near room temperature. TC glasses with high visible-light transmittance and large difference in infrared transmittance between high- and low-temperature VO 2 phases are required to save large amounts of energy in buildings. VO 2 -based multilayer films with a buffer layer and/or an anti-reflective (AR) layer are used when the films are deposited by sputtering. In this study, VO 2 -based multilayer films were prepared on soda lime glass using ZnO as both the buffer and the AR layers. The structure of the multilayer film was simulated using the optical constants measured from the deposited films. The effect of buffer and AR layers on the TC properties of VO 2 -based multilayer films prepared by sputtering was investigated by simulation of the multilayer structure and deposition of the films with the simulated structure. The TC properties were measured and compared with the calculated properties. Improved TC properties (luminous transmittance (T lum) of ∼50%/46% (30 °C/80 °C) and solar modulation ability (ΔT sol) of ∼14%), compared to those without the buffer and AR layer, were obtained from the ZnO/VO 2 /ZnO film deposited on glass. The calculated transmittances agree better with the measured ones when the optical constants measured directly from the deposited films are used and the roughnesses of the surface/interface of the multilayer films are considered in the calculation of the optical constants. [ABSTRACT FROM AUTHOR]

Crystalline vanadium oxide-titanium oxide (VO-TO) composite thin films of 197 nm are developed on quartz and silicon substrates by RF magnetron sputtering technique. A thorough structural investigation of deposited thin films is carried out by field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) techniques. Differential scanning calorimetry (DSC) and temperature-based sheet resistance measurement techniques reveals the Smart (i.e., reversible) phase transition behaviour of VO-TO films at about 45 °C. Further selective depth analysis by XPS on the VO-TO films shows the variation of the Ti doping amount along the thickness. The top region of VO-TO thin film possess lower Ti species, while beyond 50 nm thickness from the surface possess comparatively rich Ti species. This graded Ti species along the depth also results in the variation of nanomechanical properties along the depth as confirmed by nanoindentation. The simulation through the finite element approach is also carried out to depict the experimental results of nanoindentation. The nanohardness and modulus of the presently developed VO-TO composite film were measured as 6.7 GPa and 158.7 GPa, respectively at 50 nm depth. Beyond 50 nm, nanohardness and modulus were 5.6 GPa and 116.6 GPa, respectively. Further, finite element simulation predicted yield stress value of 3.52 GPa at 50 nm depth whereas higher yield stress of 4.68 GPa was predicted beyond 50 nm. [ABSTRACT FROM AUTHOR]

This article proposes a lithography-free technique to fabricate Au NPs on glass substrates using multiple solid-state dewetting (SSD) of sputtered Au ultra-thin films for LSPR sensor chip applications. We studied the influence of initial film thickness and the number of repeated process cycles on the morphology and LSPR sensing performance. This fabrication process allowed control over particle size, gap spacing, and density of the Au NPs, which influenced the LSPR peak position as observed using field emission scanning electron microscopy (FE-SEM) and UV–Vis–NIR spectrophotometry. To demonstrate LSPR sensing performance, the refractive index (RI) sensitivity was evaluated by measuring the wavelength shift of the LSPR peak in a series of glycerol/phosphate-buffered saline (PBS) mixtures, varying the refractive index from 1.33909 to 1.37409. The results showed that RI sensitivity and the figure of merit (FOM) for all prepared samples ranged from 37.191 ± 12.26–73.592 ± 9.70 and 0.35 ± 0.12–0.75 ± 0.02, respectively. An increase in repeated process cycles tended to decrease RI sensitivity and FOM. The best LSPR performance was achieved with an 8 nm initial film thickness after the first cycle, with an RI sensitivity of 70.937 ± 2.60 and an FOM of 0.75 ± 0.02, attributed to optimal Au size and density. Additionally, the binding efficiency response to human IgG with high regeneration cycles was demonstrated, highlighting the potential for biosensor applications. • Au NP arrays on glass fabricated using a lithography-free technique. • The size of Au NPs depends on the initial thickness of Au ultra-thin film. • Multiple SSD processes decrease gap space and increase density of Au NPs. • LSPR performance, including RI sensitivity and FOM, was studied. • The optimal Au NPs-LSPR chip present potential for biosensor applications. [ABSTRACT FROM AUTHOR]

• Theoretical prediction and experimental validation of spectral selectivity of absorbing thin films; • Mathematical Modeling of optical behavior of multilayer thin films; • Optimization of deposition parameters by Magnetron Sputtering; • High spectral selectivity of molybdenum and silica absorbing thin films; • SiO 2 deposition on Mo films increased their absorbances and reduces their emittance. Reducing costs in renewable energy technologies, such as solar energy, can be achieved by optimizing manufacturing processes to enhance the performance of solar absorbers. This study investigates the optical characteristics of molybdenum (Mo) films deposited on AISI 304 stainless steel substrates, both with and without a silicon dioxide (SiO 2) anti-reflective layer. The work involves optimizing film thickness and deposition conditions to improve solar absorption and minimize thermal emission. A mathematical model was developed to determine the optimal film thickness for achieving high optical selectivity, and this model was validated through experimental deposition and characterization. The results show that a 53 nm Mo film achieved a selectivity factor of 10.35, with an emissivity of 9.30 % and an absorptivity of 96.28 %. The addition of an 18 nm SiO 2 layer further increased the spectral selectivity to 13.95, with an absorptivity of 98.00 % and an emissivity of 7.02 %. These findings confirm that the theoretical predictions align with the experimental data, validating effectiveness of the optimized deposition parameters in enhancing the performance of solar absorbers. [ABSTRACT FROM AUTHOR]

The article presents both an analytical calculation of the reflection coefficient (R Ns) of low and medium energy primary ions by target surface atoms, and its comparison with the experimental results and data (R N) from various computer simulation (CS) programs. R Ns calculation has been carried out for the ballistic regime (including a paired repulsive power interaction potential between particles and the phenomenon of target blocking by surface atoms). It was assumed that particles reflected by the surface atoms at the angles of ≥90° relative to the initial direction of ions contribute to R Ns values. It has been revealed that a significant increase in R Ns values is observed at energies close to or equal to the threshold sputtering energies for different ion angles of incidence. A comparison of R Ns and experimental R N values for the energy dependences of Cs + - Mo, Rb+- Mo, D+ - C pairs and for the angular dependence of D+ (100 eV) - C pair has provided a satisfactory agreement of the results. A comparison of R Ns and R N values for CS programs has provided a satisfactory agreement only with SDTrimSP program when comparing the angular dependences of Ar+ (1 keV) ions with C and Cu targets. • Theoretically, the effect of the scattering coefficient R Ns of primary ions by surface atoms of the target on the experimental sputtering coefficient of a solid was established. • The comparison of R Ns with the experimental scattering coefficient R N has a satisfactory coincidence. • Differences are observed when comparing the values of R ns and the values of R n obtained using computer programs. [ABSTRACT FROM AUTHOR]

Three multilayers [TiN xnm /Ti xnm /p-type Si (100)] (x = 2.5, 5, 10) were fabricated using a dc-magnetron sputtering to evaluate surface and interfacial effect on electrochemical properties for possible application in supercapacitor electrode materials. The (111) and (101) planes of TiN and Ti were observed at 36.50° and 40.19° respectively. TA, LA, and TO phonon modes were found at 254.12, 306.15, and 637.94 cm−1, respectively. The defect state distribution of Ti, N, and O was investigated from PL. XPS confirmed the Ti at. % of TiN xnm /Ti xnm multilayers decreased from 43.07 to 12.04 and N at. % increased from 42.79 to 72.53 % as the x value decreased from 10 nm to 2.5 nm. The areal specific capacitance (C a) and energy density (E) of the TiN xnm /Ti xnm multilayer electrode increased with decreasing multilayer thickness. E varied from 0.27 to 1.37 mWhcm−2 and the power density (P) from 5.04 to 25.4 mWcm−2 for the multilayers. The diffusion coefficient (D) and total accumulated charge (Q in) decreased from 6.48 × 10−17 to 1.56 × 10−18 cm2/s and 1.82 to 1.64 C/cm2, respectively, for TiN xnm /Ti xnm multilayers. The capacitive contribution was the highest in x = 10 (2.181 Av−1s). However, the diffusion-limited contribution was maximum in x = 5 (3.541 Av−1/2s1/2). The cyclic stability maintained at 85.4 % capacitive retention over 1000 cycles and the expansive potential window (up to 0.8 V in 1 M H 2 SO 4) makes the multilayer thin films ideal for supercapacitor electrodes. Among all the samples, the TiN 2.5nm /Ti 2.5nm exhibited the highest C a , E, and diffusion coefficient, originating from the smaller layer thickness, leading to more ohmic conductivity and facilitating the supercapacitive performance. [Display omitted] [ABSTRACT FROM AUTHOR]

Defects in undoped BaSi 2 thin films prepared by co-sputtering technique were investigated. The growth rate ratio between the sputtering of Ba and BaSi 2 targets (GR Ba /GR BaSi2) was varied between 0 and 0.5. Sample i (GR Ba /GR BaSi2 = 0) exhibited a large root-mean-square (rms) roughness of 102 nm due to the presence of high density of 3D features which is attributed to Si precipitates. The rms roughness was significantly reduced to 9–26 nm for samples grown at GR Ba /GR BaSi2 > 0.18. Raman data reveal the presence of Si vacancy (V Si) and Ba antisite (Ba Si) defects. For GR Ba /GR BaSi2 > 0.18, the A g mode becomes blueshifted while the linewidth becomes narrower, suggesting a reduction in V Si. A similar trend was also observed for Ba Si. At 10 K, defect-assisted emissions were observed from sample i with photoluminescence (PL) peak energy of 0.92 and 1.27 eV. Power dependent PL analyses suggested that the emissions were due to V Si -to-Ba Si and V Si -to-free hole transitions. However, samples grown at GR Ba /GR BaSi2 ≥ 0.18 showed negligible PL emission, possibly due to low density of V Si. Based on the Tauc and Urbach tail analyses, the band gap of all samples is ∼1.31 eV, regardless of the GR Ba /GR BaSi2. However, samples with less structural disorder showed smaller characteristic energy of the absorption edge (E o). • Defect-to-defect emission were observed at low temperature. • Co-sputtering parameters affect disorder in BaSi 2 but bandgap remains unchanged. • Co-sputtering produces high quality BaSi 2 , comparable with MBE. [ABSTRACT FROM AUTHOR]

The growth mechanism and high temperature oxidation behavior of Si-modified aluminide coatings prepared on a Ni-base single crystal superalloy DD98M using vacuum plasma irradiation were investigated. The growth of the coatings under plasma irradiation was much faster than thermal diffusion-controlled process. The coatings comprised an aluminide outer zone, where Si existed as solid-solute, and an inter-diffusion zone where silicide particles precipitated in aluminide matrix. The crystalline structures of the aluminides were found dependent on the irradiation power. β-NiAl was formed at higher irradiation power while δ-Ni 2 Al 3 was formed at lower irradiation power. The β-NiAl coatings had higher oxidation resistance than the δ-Ni 2 Al 3 ones usually, with an exception of one β coating which was prepared at the highest substrate bias which underwent severe internal oxidation. The presence of numerous voids in the oxide scale of Ni 2 Al 3 may be related to the large number of Kirkendall voids present in the as-prepared coating. [Display omitted] • Aluminide coatings grown by plasma irradiation do not follow the parabolic law. • Si is soluble in outer layers but forms a silicide in the interdiffusion zone. • Higher incident ion energies promote NiAl formation and vice versa for Ni 2 Al 3. • Ion irradiation improves the oxidation resistance of aluminide coatings. [ABSTRACT FROM AUTHOR]

• Sputtered SnO x films from a SnO x target at P O2 = 0 Pa consisted of 42 % SnO. • The Sn2+ fraction increased to 62 % after high vacuum post-deposition annealing. • The p-SnO thin-film transistor exhibited I on/ I off = 5.1 × 104 and μ = 1.8 cm2/V·s. p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnO x film deposited from an SnO x (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (P O2) of 0 Pa consisted of 2 % Sn (Sn0), 42 % Sn2+, and 56 % SnO 2 (Sn4+). However, compared with the Sn2+ fraction observed after PDA under N 2 and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO 2 to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (I on / I off) ratio of 5.1 × 104 and a hole field-effect mobility (µ FE) of 1.8 cm2/(V·s). [ABSTRACT FROM AUTHOR]

Silver doped diamond-like carbon (Ag/DLC) coatings are in high demand for biomedical applications such as artificial implants, surgical instruments, and medical devices. However, recent reports indicate that the excess Ag concentration required in typically made Ag/DLC coatings significantly reduces their mechanical performance and biocompatibility. Here, we propose a novel single-step approach to precisely dope small quantities of Ag in the form of isolated nanoparticles embedded at defined depths in a DLC matrix. This new Ag/DLC coating architecture is designed to release controlled Ag ion levels to fight infection in the early post-surgery stages, while a confined Ag amount maintains the excellent mechanical and biocompatibility performance of the underlying DLC coating when compared to typically made Ag/DLC coating designs. Coatings of pure DLC, typically made Ag/DLC with Ag doped throughout the carbon matrix and the new Ag/DLC design with precise Ag doping, are made using a modified magnetron sputtering system. The coatings are characterised for structural, mechanical, ion leaching, and biocompatibility profiles against L929 fibroblast cells. Results indicate that the new Ag/DLC coating requires only 2 at.% Ag to release a similar level of Ag ions (∼0.6 ppm) to a typical Ag/DLC coating with a much higher Ag content of 17 at.%. The new Ag/DLC coating design also outperforms the typical design with a 63 % increase in hardness, 100 % higher Young's modulus, and 21 % higher biocompatibility. The enhanced biomechanical performance of the proposed new Ag/DLC architecture could have significant potential for coating of future medical devices. • The new design allows precision Ag doping in DLC coating matrix at controlled depths. • 2 % Ag in the new design leaches similar ion levels as 17 % Ag in the typical design. • The new Ag/DLC design is 21 % more biocompatible than typical Ag/DLC. • Hardness is less compromised in the new Ag/DLC coating attributing to reduced Ag amounts. [ABSTRACT FROM AUTHOR]

• Sputtered MoS 2 :Nb films are investigated as infrared-transparent contacts. • The influence of sputtering pressure on the MoS 2 :Nb films properties is discussed. • Despite Nb-doping, a n-type conductivity is found and discussed. • The high work function (≈5 eV) makes the films suitable as hole transport layer. • MoS2 films are tested in single Cu2ZnSnS4 and tandem Cu2ZnSnS4/c-Si solar cells. MoS 2 :Nb films deposited by radio-frequency magnetron sputtering are investigated in view of their application in infrared (IR)-transparent contacts for tandem photovoltaic devices. This material is already known to give a good electrical contact with p-type chalcogenide semiconductors, which are typically grown onto opaque molybdenum metallic contacts and a MoS 2 layer spontaneously forms at the back interface during the on-top semiconductor growth. Our study explores a different approach, which involves the direct growth of IR-transparent MoS 2 :Nb films via sputtering inside complete photovoltaic devices, like Cu 2 ZnSnS 4 (CZTS)-based single junction solar cells and CZTS/Si tandem devices. Films deposited at different sputtering pressures are compared by analysing their microstructure, morphology, chemical composition, optical and electrical properties. The effects of post-deposition sulfurization treatments are also investigated. We find that MoS 2 :Nb films deposited at around 0.1 Pa exhibit compactness but show a notable sulfur deficit ([S]/[Mo]≈1.4), a significant sub-bandgap optical absorptance and lack of crystallinity. Increasing the Ar pressure to 1 Pa raises the [S]/[Mo] ratio to 2.2, yielding crystalline films with good IR-transparency, although with a porous morphology. Despite 0.5 wt% Nb-doping of the sputtering target, the as-deposited films demonstrate n-type conductivity likely due to uncontrolled impurities and intrinsic defects. Ultraviolet Photoemission Spectroscopy measurements suggest that films' work function higher than 5 eV can be obtained with a post-deposition sulfurization, making these materials suitable as Hole Transport Layer in photovoltaic applications. A similar increase in work function is expected in the CZTS/MoS 2 junctions, since the sputtered MoS 2 :Nb films undergo a sulfurization process needed to obtain the overlying polycrystalline CZTS absorber. CZTS solar cells produced with sputtered MoS 2 and Transparent Conductive Oxides contacts on glass substrates, despite plagued by severe adhesion problems, show the potentiality to give efficiencies comparable to reference devices with standard Mo back contact. Fabrication of CZTS/Si tandem devices on textured silicon bottom cells yields a maximum efficiency of 4.4 %, primarily hindered by the low quality of the CZTS film on textured substrates. Nonetheless, optoelectronic characterizations based on both spectrophotometric and quantum efficiency measurements confirm a good IR transparency of the MoS 2 -based intermediate contacts and the desired electrical behaviour. [ABSTRACT FROM AUTHOR]

• TiO 2 film is prepared by direct current pulsed magnetron sputtering technology. • Annealing makes TiO 2 film with obvious anatase (0 0 1) preferred orientation. • Diffusion and orientation effect controls TiO 2 film growth with Volmer-Weber mode. • Nuclei coalescence makes TiO 2 film with anatase (0 0 1) preferred orientation. The direct current pulsed magnetron sputtering technology is employed to deposit TiO 2 film onto the glass and Si(1 0 0) substrates. After annealing treatment, TiO 2 film displays anatase (0 0 1) preferential orientation. The growth behavior of deposited and annealed TiO 2 films is investigated. The results show that in the original stage, TiO 2 film growth behavior is in Volmer–Weber mode, which is dominated by the diffusion effect. Considering the rivalry between TiO 2 crystal nuclei, both crystallographic orientation and diffusion effects jointly dominate the film growth behavior in the rest stage. More importantly, the annealing treatment resulted in the coalescence of TiO 2 crystal nuclei, as well as the growth of TiO 2 crystal nuclei. Most importantly, after coalescence and growth of TiO 2 nuclei, the anatase [0 0 1] crystal orientation of TiO 2 grains remains the same as the normal direction of TiO 2 film. Finally, after annealing treatment, TiO 2 films comprise anatase (0 0 1) preferential orientation. [ABSTRACT FROM AUTHOR]

• Comprehensive analysis of temperature-dependent bandgap and Urbach energies in CdTe thin films. • Structural characterization reveals polycrystalline nature with distinct crystallographic orientations. • Bandgap energy increases from 1.49 eV at room temperature to 1.57 eV at 10 K. • Urbach energy rises from 82.7 meV to 93.7 meV with increasing temperature. • Insights advance understanding of CdTe thin films' performance in optoelectronic applications. This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance. [ABSTRACT FROM AUTHOR]

Electrocatalytic water splitting is a promising method for large-scale green hydrogen production. Nevertheless, the electrodes used remain costly and exhibit limited adherence. We should develop alternative techniques using cost-effective materials to achieve robust catalyst-substrate adherence. Herein, we systematically investigate the HER performance of the bimetal Ni-Mo system fabricated by scalelable magnetron sputtering. The formation of the bimetal Ni-Mo system not only significantly increased the HER activity, but it also accelerated the kinetic reaction. The optimal ratio Ni/Mo of 6 enables the achievement of ultra-low overpotentials of 39 and 172 mV at current densities of −10 and −100 mA/cm2, respectively, in alkaline conditions. The performance of the electrode is also evaluated using the single-stack electrolyzer and further assessed in natural seawater. The long-term stability test at 1.6 and 4 A for each 50 hours shows stable performance. The HER improvement mechanism is systematically investigated through experimental and computational calculations. [Display omitted] • The bimetal Ni-Mo system formed through sputtering increased HER activity and accelerated reaction kinetics. • The optimal Ni/Mo ratio of 6 achieves ultra-low overpotentials of 39 and 172 mV at -10 and -100 mA/cm2. • HER improvement mechanism is systematically studied by experiments and computations. [ABSTRACT FROM AUTHOR]

[Display omitted] • This study offers guidelines for attaining the optimal model for desired colors. • Optimizing model by material, thickness, and layers for implementing various colors. • Providing methods for implementing and assessing color in colored BIPV. • FWHM decreases as the interference order (m) increases. • Prediction of color is attained through simulation without the need for deposition. In this study, we proposed a design and implementation method to display various high-saturation colors of Building Integrated Photovoltaics (BIPV) modules. The color reproduction results were compared and analyzed through simulations, using two methods, physical thickness and reflectance spectrum to reproduce RGB colors of Fraunhofer ISE's (Germany) color BIPV module, a leading research institute. To achieve colored glass, a single-layer structure of Nb 2 O 5 was simulated on the glass and deposited by the PVD sputtering method. Through this approach, we successfully produced an array of clear color glass. We performed simulations to attain RGB colors through a multi-layer structure model. We investigated the effects of key factors such as material, thickness, and the number of layers (SiO 2 , Si 3 N 4 , Nb 2 O 5 , TiO 2) on reflectance and color attainment. Finally, assuming a color module deposited with a triple-layer structure of Nb 2 O 5 /SiO 2 /Nb 2 O 5 was installed in a real building, the expected annual power generation was simulated and compared with the normal BIPV module. [ABSTRACT FROM AUTHOR]

Titanium-copper thin films were prepared by Glancing Angle Deposition (GLAD) to assess their suitability for temperature sensors, by measuring the temperature resistance coefficient (TCR). The films were deposited with zigzag and spiral architectures, while the substrate holder was maintained at a fixed angle of α = 20º relative to the incident flux of the sputtered particles. The films were produced through DC co-deposition magnetron sputtering, using two targets of pure Ti and Cu. A wide range of compositions was achieved by varying the current on the Cu target from 6 mA up to 20 mA. The obtained architectures were stabilized through in-vacuum annealing treatments to minimize the hysteresis effects of the temperature on the electrical resistance of the films. The sheet resistance showed a direct correlation with the formation/precipitation of the Ti-Cu intermetallic phases in the film. The measured Temperature Coefficient of Resistance (TCR) values ranged from −1.08×10−3 to - 5.1×10−3 °C−1, closely resembling the absolute value of platinum's TCR (3.93×10−3 °C−1). Moreover, the elimination of hysteresis from the TCR plot and consistent results obtained during multiple cycles of heating and cooling highlight the potential of titanium copper thin films as promising alternatives for temperature sensors. [Display omitted] • Zigzag and Spiral thin films deposited by GLAD, unveil nanostructures with superior properties. • Titanium-copper thin films redefine temperature-sensing technology. • A tenfold shift in electrical resistance and thermo-resistive response, achieved by adjusting composition in Ti-Cu thin films. • Growing geometry significantly influences the thermo-resistive response of Ti-Cu thin films. • TCR values exhibit a sevenfold variation in Ti-Cu thin films based on composition. [ABSTRACT FROM AUTHOR]

• The co-sputtering technique was key to achieve the doping of TiO2 with tungsten. • Tungsten doping stabilizes rutile at 500 °C. • The preferred orientation of the rutile changes from the plane (1 0 1) to the plane (1 1 0) • The synthesis process provides low surface roughness and nanometric particle size. Tungsten doped Titania thin films were sputtered on a silicon substrate by magnetron co-sputtering. The influence of tungsten on Vickers hardness and crystallographic changes was studied in films subjected to stepped annealing treatments. Rutile is the dominant phase with crystallite size ∼ 10 nm after 500 °C annealing. The films , doped with 1.79 % W, exhibit the highest hardness (20.88 GPa), a rutile-anatase mixture (80:20) and a preferential shift in crystallographic orientation from (1 0 1) to (1 1 0). The homogeneous distribution of tungsten in TiO 2 stabilizes rutile at 500 °C, providing an innovative and simple strategy for its synthesis, thus expanding the options for substrate materials. [ABSTRACT FROM AUTHOR]

• Magnetron sputtered niobium (Nb) films have been prepared by varying the deposition pressure. • Surface roughness and density of Nb films significantly change with deposition pressure. • Nb films of any stress state can be deposited by varying the deposition pressure. • The lowest electrical resistivity achieved is comparable to that of bulk Nb metal. • The micro-structural changes correlated with Nb films' mechanical and electrical properties. Niobium (Nb) thin films were deposited on a Si substrate using magnetron sputtering system by varying the deposition pressure. The effect of deposition pressure on the microstructure, residual stresses, and electrical properties was investigated by systematically varying the deposition pressure from 0.15 to 0.60 Pa. The Nb thin films were characterized using hard x-ray reflectivity, grazing incidence x-ray diffraction, four point probe method, and atomic force microscopy. The films grown at lower deposition pressures had smooth surfaces and more compact structures, which are advantageous for lowering electrical resistance but had higher compressive stress. On the other hand, the films grown at higher deposition pressures had columnar type growth with less dense structures, which leads to increase in electrical resistance. However the nature of stresses transform from compressive to tensile. Hard X-ray reflectivity performed on Nb films provides direct insight into the growth and the microstructure which were correlated with the mechanical and electrical properties. [ABSTRACT FROM AUTHOR]

• A crystalline Fe 2 TiO 5 material was obtained by solvothermal method. • Calcination improved the material degree of crystallinity and improved activity in photocatalytic CO 2 reduction. • Deposition of CuO nanoparticles by magnetron-sputtering onto Fe 2 TiO 5 improved the photocatalytic activity. • CH 4 was the only detectable gaseous product for PCO 2 RR. Fe 2 TiO 5 is a promising and underexplored material as a semiconductor photocatalyst for CO 2 reduction reaction (PCO 2 RR), aimed at mitigating greenhouse gas emissions. In this study, pure Fe 2 TiO 5 was synthesized via solvothermal method and subsequently calcined across temperatures ranging from 600 to 900 °C. The performance was evaluated within a PCO 2 RR under simulated sunlight, generating CH 4 as a single detectable product. Further enhancement was achieved by depositing CuO nanoparticles below 5 nm onto the Fe 2 TiO 5 surface using magnetron sputtering deposition. The yield of CH 4 increased from 0.032 to 0.042 µmol. As far as we know, this marks the inaugural application of Fe 2 TiO 5 as a photocatalyst for CO 2 reduction. [ABSTRACT FROM AUTHOR]

Using radio frequency magnetron sputtering (RFMS), the undoped and Ti-doped vertical nanowall structured MoS 2 thin films were grown. In order to benefit from the chromic properties of the MoO 3 and inherited surface/volume ratio of the vertical nanowall structures of the MoS 2 , these films thermally oxidized to α-MoO 3 while retaining the morphology. Measurements of in-situ transmittance during the oxidation process revealed that the MoS 2 samples with a highTi content oxidized more quickly. On the other hand, the presence of Ti has led to denser nanowall formations. Optical modulation (OM) in the visible region improved with increasing Ti concentration within the coloring potential range of -0.2 to -0.45 V, which are relatively low working voltages that indicate energy efficient electrochromic materials. The highest Ti-doped MoO 3 (MTO40) and undoped (MBO) samples exhibit 52.2 % and 37.6 % OM at 700 nm (47.8 % and 25.7 %, respectively, at 550 nm) under -0.45 V applied potential. On the other hand, the coloring times for MBO, MTO20, MTO30, and MTO40 are 4.7, 4.1, 6.2, and 2.9 s, respectively, while the bleaching durations are 3.1, 1.4, 1.1, and 1.2 s for samples. These Ti-doped MoO 3 electrochemical characteristics demonstrate the suitability of the proposed technique for device applications. [Display omitted] [ABSTRACT FROM AUTHOR]

The CoCrFeMnNi high entropy alloy thin films with crystalline (solid solution) structure or amorphous state were fabricated by magnetron sputtering process at different target powers and different substrate bias. Effects of the target power and substrate bias on the characteristics of the CoCrFeMnNi thin films such as microstructures, morphology and surface topography, as well as mechanical properties and corrosion behavior were studied. Phase prediction was calculated by using thermodynamic and kinetic criteria under various deposition conditions. The enthalpy, entropy, δ and Ω parameters, and electronegativity differences influenced the solid solution stability of thin films. These parameters led to the formation of solid solutions with crystalline or amorphous structures under specific limits, which corresponded to the practical XRD and TEM analysis results. Using a substrate bias in the deposition of CoCrFeMnNi thin film changed the amorphous structure to a crystalline (solid solution (BCC + FCC)) at higher target powers (200 and 300 W). On the other hand, the film structure was entirely amorphous at all sputtering target powers without the substrate bias. The mechanical properties, such as hardness, Young's modulus, film strength, and fracture toughness of CoCrFeMnNi thin film, can be enhanced by using the substrate bias and increasing the sputtering power. The potentiodynamic polarization test in 3.5 wt% NaCl aqueous solution indicated that the deposition of CoCrFeMnNi thin films at different sputtering powers and without substrate bias could increase the corrosion resistance of 304 stainless steel substrate. Using the substrate bias of −100 V in the fabrication of CoCrFeMnNi thin film decreased the corrosion current density and increased its polarization resistance. • FeCoCrMnNi high entropy alloys thin films were prepared using DC magnetron sputtering. • Phase prediction was calculated using thermodynamic and kinetic criteria at various deposition conditions. • Phase prediction led to the formation of crystalline phases or amorphous structures. • Using the substrate bias and increasing the sputtering power could increase mechanical properties. • Using the substrate bias of −100 V increased corrosion resistance and fracture toughness. [ABSTRACT FROM AUTHOR]

[Display omitted] • Study of native surface oxidation of DC- sputtered Mo thin film. • Guideline of Mo thin film for storage and transportation in tropical environment. • Mo thin film kept in open air at room temperature undergoes surface oxidation. • Random growth of nanostructured MoO x. • MoO x has less conductivity compared to Mo as sputtered film. Molybdenum (Mo) is a versatile refractory metal that has been widely used as back contact in thin film photovoltaic cells. However, Mo tends to react with oxygen in ambient environment which influences its original properties. In this study, Mo thin films were stored in different environments (in vacuum desiccator and open air) for 8760 h. Subsequently, these films were characterized and analyzed by Grazing Incidence X-Ray Diffractometer (GIXRD), Raman spectroscopy, Field Emission Scanning Electron Microscopy coupled with Energy Dispersive X-Ray Spectroscopy (FESEM-EDX), Conductive Atomic Force Microscopy (C-AFM), and Hall Effect measurement system. It was found that Mo thin film kept in open air at room temperature undergoes surface oxidation which results in random growth of nanostructured MoO x. Formation of these observed oxide compounds on the surface is correlated with decrement in the electrical conductivity mainly through lower carrier mobility. Preliminary results highlighted from this study can serve as general guideline for handling, storage and transportation requirements forMo thin film in tropical environment. [ABSTRACT FROM AUTHOR]

[Display omitted] • First comprehensive examination of the reaction mechanism in nanoZr-based thermite compositions. • Predominance of a low-temperature exothermic event in Zr/CuO redox reaction. • Zr undergoes a sequential three-step oxidation process below 475 °C. • Zr/CuO demonstrates a 400-fold reduction in ignition delay compared to Al/CuO. In this report, we examine the intricate details of the mechanism driving Zr/CuO thermite system, shedding new light on the exceptional reactivity of Zr fuel with oxygen. Magnetron-sputtered Zr/CuO reactive multilayers were deposited, and thermo-physical techniques were employed to characterize the progression of the chemical reaction upon heating. Unlike commonly used Al fuel, Zr/CuO exhibited 100% heat release below 500 °C, contrasting with the ∼5% observed for conventional Al/CuO system. This enhanced reactivity at low temperature is attributed to the rapid oxygen consumption behavior of Zr, due to the poor barrier of ZrO x to oxygen diffusion. The oxidizing behavior of Zr was quantitatively analyzed using electron microscopy and spectroscopy. Our observations reveal a three-step process of Zr oxidation facilitated by a rapid reduction of CuO to metallic Cu accompanied by the formation of an intermediate Cu 2 O phase: (i) a preliminary low-temperature mass transport initiating at 275 °C, (ii) partial Zr oxidation forming ZrO 2 and oxygen enriched Zr and finally (iii) complete conversion to zirconia at 450 °C. Finally, Zr/CuO reactive thin-films demonstrated a very high reactivity with an ignition delay time of 0.04 ± 0.016 ms and a burn rate of 3.5 m.s−1, in stark contrast to the same volume of Al/CuO, which failed to ignite and burn altogether. This study not only deepens our comprehension of Zr-based thermite system but also underscores its potential for diverse applications in energetic materials. [ABSTRACT FROM AUTHOR]

This paper examines how varying the thickness of the indium tin oxide (ITO) seed layer, ranging from 8 to 20 nm, impacts the optical, electrical, and structural properties of triple-layer transparent conductive oxide ITO/aluminum doped zinc oxide (AZO)/ITO. ITO and AZO films were deposited by DC and RF magnetron sputtering, respectively. The thickness and density of each layer were measured by X-ray reflectometry (XRR). X-ray diffraction showed that as the thickness of the ITO seed layer increased, both the average size of the crystallites and the volume of the crystalline phase in the AZO film also increased. Measurements of the electrical characteristics indicated a decrease in resistivity as the thickness of the ITO seed layer increased. This reduction is attributed to enhanced charge mobility, resulting from improved crystallinity. It has been shown that a 20-nm-thick ITO seed layer is sufficient to achieve a charge mobility comparable to that of pure ITO films. The photoluminescence spectra have shown a decrease in the concentration of the oxygen vacancies with the introduction of both the cover and seed layers of ITO. The figure of merits (FOM) of the triple-layer coatings and the optical constants of the AZO and ITO films were calculated. The results of this paper indicate that the ITO20/AZO48/ITO12 triple-layer coating possesses optimal characteristics for use in high-efficiency silicon solar cells. [Display omitted] • ITO seed layer with a thickness >8 nm improves AZO layer crystallinity. • 20 nm ITO seed layer enough to increase mobility from 9.56 to 41.34 cm2V−1s−1. • Introduction of ITO layers decreases concentration of oxygen vacancies in AZO layer. • ITO12/AZO48/ITO20 layer has the best FOM equal to 9.13 10−4 □ Ω−1. • 60–76 % replacement of ITO by AZO improves transparency in the region of 350–1100 nm. [ABSTRACT FROM AUTHOR]

This work focused on removed mode of titanium target material and deposition process of the TiN film in a novel dual pulse power magnetron sputtering (DPPMS), which could improve deposition rate and properties of the TiN film. The study was carried out using DPPMS with different target power ratios between the first and the second ionized periods (P w /P s). It was found that when P w /P s was changed from 0.9/1.6 to 0.3/2.2, the removed mode of target material changed from sputtering to sputtering and evaporation, and the deposition rate of TiN films increased from 26 to 61 nm/min. All TiN films showed face center cubic (fcc) crystal structure and typical columnar microstructure. The compactness and size of columnar structure were improved with P w /P s changed from 0.9/1.6 to 0.3/2.2. Additionally, the hardness of TiN film deposited at P w /P s of 0.3/2.2 reached up to 25.4 GPa. [ABSTRACT FROM AUTHOR]

Cu 2 O appears as a promising material for synthesizing p-type transparent semiconducting oxides with low electrical resistivity and high optical transmittance. We report on an exhaustive study of magnesium-doped cuprous oxide layers deposited by radio frequency magnetron sputtering. We present the characterization of the structural and optoelectronic properties of Mg:Cu 2 O thin films deposited at room temperature with varied argon plasma pressure. As a result, we found that by adjusting the Ar plasma pressure, Mg-doped Cu 2 O layers with high crystallinity combined with optimal electrical and optical properties can be synthesized. Using a plasma pressure of 13 mTorr, we obtained a transparent p-type material with crystallite size of 15 nm, electrical resistivity of 10.2 Ωcm, and optical band gap of 2.55 eV. [Display omitted] [ABSTRACT FROM AUTHOR]

Direct growth of layered MoS 2 nanoworms on low-cost bendable SSM has been physically achieved for flexible supercapacitor utilization. The homogeneously grown MoS 2 @SSM electrode demonstrates several electroactive cavities, facilitating the swift diffusion and additional pathways for Na+-ion intercalation. The structural and morphological features of MoS 2 thin film grown at optimized substrate temperature (300 °C) revealed the formation of the porous array of intermixed nanoworms. The advanced electrode delivers a specific capacitance of 214.90 F/g at a scan rate of 5 mV/s. The specific energy of 28.05 Wh/kg is obtained at 0.26 kW/kg, further elucidating the rich electrochemical response. A wide voltage window of 1.2 V with elongated cycling (retains ∼88% capacitance after 3000 cycles) has been achieved by MoS 2 @SSM electrode (dimensions 1 × 1 cm2). Moreover, Dunn's technique has gauged the origin of dual contribution in charge storage mechanism and considerable dominance of capacitive contribution over faradic one. The synthesized electrode has been investigated at a bending angle of 180° (retains ∼92%), signifying better mechanical stability and pliability. As practical applicability in the flexible supercapacitor, the contemporary route yields a cathode of enormous potential, which may enable new possibilities in wearable hands-on electronics and demonstrate a framework to manifest its real practical application. [Display omitted] • MoS 2 nanoworms prepared on flexible stainless-steel mesh (SSM) by magnetron sputtering route. • An optimum deposition temperature of 2H-molybdenum disulfide has been found. • Multilayer porous structure of MoS 2 accelerates intercalation of Na + ions. • Dunn's method segregates ∼91% capacitive contribution attributed to electroactive sites and conductive SSM skeleton. • MoS 2 @SSM electrode shows larger supercapacitive improvement with ∼92% retentivity at mechanical bending by a 180° angle. [ABSTRACT FROM AUTHOR]

Roll-to-roll (R2R) nano-manufacturing processes are critical in the manufacturing of electronic components for consumer products such as displays and flexible electronics. However, there are significant quality and process control challenges inherent to the control of R2R processes at nanometer scales. These challenges arise from the strong nonlinearities in the underlying phenomena, high levels of noise, and large measurement delays. This paper analyzes and evaluates the effectiveness of several control strategies in mitigating the challenges with control of R2R process steps. The proposed control strategies were tested on an experimentally derived model of an R2R physical vapor deposition (PVD) process, which simulates forward and double-pass R2R sputtering deposition procedures. [ABSTRACT FROM AUTHOR]

SDTrimSP is a popular simulation program to compute several effects of the interaction between an impinging ion and a solid, such as ion implantation ranges, damage formation or sputtering of surface atoms. We now introduce a graphical user interface for SDTrimSP to make its operation more accessible for a broad group of users. It is written as a separate Python program and is not restricted to any specific operating system. The interface allows a quick and easy start as well as the direct evaluation of SDTrimSP simulations. Its capabilities are demonstrated here in the form of several example cases, including the dynamic simulations with SDTrimSP, where ion-induced target changes are taken into account. The presented graphical user interface is made freely available to support a large number of users in performing simulations of ion–solid interaction. [ABSTRACT FROM AUTHOR]