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Introduction - silicon semiconductor metrology. Part 1 Transistor fabrication metrology: gate dielectric metrology metrology for ion implantation MOS device characterization carrier illumination characterization of ultra-shallow implants modelling of statistical manufacturing sensitivity and of process control and metrology requirements for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of metrology for on-chip interconnect metrology for on-chip interconnectdielectrics thin film metrology using impulsive stimulated thermal scattering (ISTS) metal interconnect process control using picosecond ultrasonics sheet resistance measurements of interconnect films characterization of low dielectric constantmaterials high resolution profilometry for CMP and etch metrology. Part 3 Lithography metrology: critical dimension metrology in the scanning electron microscope scanned probe microscope dimensional metrology electrical DC metrology and relatedreference materials metrology of image placement scatterometry for semiconductor metrology. Part 4 Defect detection and characterization: unpatterned wafer defect detection particle and defect characterization calibration of particle detectionsystems. Part 5 Sensor based metrology: in-situ metrology. Part 6 Data management: metrology data management and information systems. Part 7 Electrical measurement based statistical metrology: statistical metrology. Part 8 Overviews of key measurement andcalibration technology: physics of optical metrology of silicon based semiconductor devices UV, VUV and extreme UV spectroscopic reflectometry and ellipsometry analysis of thin layer structures by x-ray reflectometry ion beam methods electronmicroscopy based measurement of feature thickness and calibration of reference materials status of lithography at the end of 2000.