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Transparent conducting oxides (TCOs), combining the mutually exclusive functionalities of high electrical conductivity and high optical transparency, lie at the center of a wide range of technological applications. The current design strategy for n-type TCOs, making wide bandgap oxides conducting through degenerately doping, obtains successful achievements. However, the performances of p-type TCOs lag far behind the n-type counterparts, primarily owing to the localized nature of the O 2 p -derived valence band (VB). Modulation of the VB to reduce the localization is a key issue to explore p-type TCOs. This Perspective provides a brief overview of recent progress in the field of design strategy for p-type TCOs. First, the introduction to principle physics of TCOs is presented. Second, the design strategy for n-type TCOs is introduced. Then, the design strategy based on the concept of chemical modulation of the valence band for p-type TCOs is described. Finally, through the introduction of electron correlation in strongly correlated oxides for exploring p-type TCOs, the performance of p-type TCOs can be remarkably improved. The design strategy of electron correlation for p-type TCOs could be regarded as a promising material design approach toward the comparable performance of n-type TCOs. [ABSTRACT FROM AUTHOR]

Resistive random access memories with self-rectifying behaviors, in which the sneak-path issue in passive crossbar arrays can be alleviated without additional access devices, have been investigated recently. The applications of p-type transparent oxide semiconductors as a memory medium will pave the way for realizing all-transparent memories and integrating on the complementary metal-oxide-semiconductor devices. Here, Ag-based p-type delafossite AgCr 1 − x Mg x O 2 thin films were prepared onto n-Si wafers to investigate the resistive switching (RS) performance. Bipolar RS with self-rectifying behaviors were observed in the Au / AgCr 0.92 Mg 0.08 O 2 / n − Si sandwich structure, showing improved rectification ratio, On/Off ratio, and switching durability. The change of the oxygen vacancy concentration resulting from Mg doping plays a key role in determination of the RS. The intrinsic rectifying behavior in the low resistance state is attributed to the existence of a Schottky-like barrier in the AgCr 1 − x Mg x O 2 / n − Si p-n heterojunction. The RS behavior originates from the modification of the barrier, which is induced by the trapping/detrapping of charge carriers in oxygen vacancies at the interface. The results will provide novel RS devices based on p-type transparent delafossite thin films with a self-rectifying feature. [ABSTRACT FROM AUTHOR]

We have investigated the structural, magnetic, and thermal transport properties of Co 1 − x Ni x Cr 2 O 4 (0 ≤ x ≤ 1) to check the evolution of structural and magnetic properties upon the introduction of the Jahn–Teller active ion Ni 2 + . The x ≤ 0.95 samples can be indexed with a cubic lattice with the space group Fd3m, whereas the x = 0.98 sample undergoes a cubic-tetragonal structural transition, and the x > 0.98 samples belong to a tetragonal lattice with the space group I41-amd at room temperature. All these samples undergo a paramagnetic–ferrimagnetic transition at T C. A spiral ferrimagnetic ordering at T S is suppressed when the amount of Ni is increased, and the abnormal magnetization at T S for the x = 0.6 and 0.8 samples is not pronounced. The measurements of magnetic hysteresis reveal that the x = 0.4 and 0.6 samples possess a rather large coercivity H C compared with the x = 0 and 1 samples. Specifically, the x = 0.4 and 0.6 samples undergo a short-range antiferromagnetic transition above T C. The magnetic properties of the Ni-doped samples can be understood in terms of the magnetic structure model consisting of longitudinal and transverse magnetic sublattices. [ABSTRACT FROM AUTHOR]

The influence of growth rate and substrate temperature on the two-dimensional electron gas (2DEG) of LaVO 3 / SrTiO 3 interfaces has been investigated. It is found that both growth rate and substrate temperature can modulate the structural and electrical properties of the LaVO 3 / SrTiO 3 interfaces through oxygen substrate-to-film transfer. When the LaVO 3 thin films are deposited at a low substrate temperature and a high growth rate, the LaVO 3 / SrTiO 3 interfaces exhibit weak oxygen substrate-to-film transfer and resultant low density of oxygen vacancies in the SrTiO 3 substrate. As a result, the intrinsic effect (polar discontinuity and/or dielectric screening) dominates the interfacial conduction, while the oxygen vacancies play a minor role. In contrast, the oxygen substrate-to-film transfer (oxygen vacancies in the SrTiO 3 substrate) can be enhanced (increased) by depositing the LaVO 3 thin films at lower growth rates and/or higher substrate temperatures. In this case, the contribution of oxygen vacancies to the interfacial conduction would prevail over the intrinsic effect. Our results elucidate the origins of 2DEG in the LaVO 3 / SrTiO 3 interfaces and may also be important for other SrTiO 3 -based heterointerfaces. [ABSTRACT FROM AUTHOR]

We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n=5 Aurivillius thin films. [ABSTRACT FROM AUTHOR]

Single-phase polycrystalline SrBi5Ti4CrO18 and SrBi5Ti4Cr0.5Co0.5O18 were synthesized by a modified Pechini method. Both samples have an orthorhombic structure with the space group B2cb. The valence state of Cr is suggested to be +3 and the Co ions exist in the form of Co2+ and Co3+ based on the results of x-ray photoelectron spectroscopy. The sample SrBi5Ti4Cr0.5Co0.5O18 exhibits the paramagnetic state, whereas SrBi5Ti4Cr0.5Co0.5O18 undergoes a ferrimagnetic transition at 89K originating from the antiferromagnetic coupling of Cr-based and Co-based sublattices. In addition, SrBi5Ti4Cr0.5Co0.5O18 shows a typical spin-glass behavior below 89K with zν =6.02 and τ0=(1.75±0.33)x10-14 s as evidenced by the results of the frequency dependence of ac susceptibility and magnetic relaxation measurements. In particular, both the dielectric constant and dielectric loss of SrBi5Ti4Cr0.5Co0.5O18 exhibit the characteristics of dielectric relaxation around 89K with the activation energy of (0.14±0.02) eV, which can be ascribed to the electron hopping of Co2+-VO-Co3+ through the bridging oxygen vacancies. [ABSTRACT FROM AUTHOR]

We investigate the structural, magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ⩽ x ⩽ 0.15). The room-temperature weak ferromagnetism is observed for the W/Co co-doped samples. The results of the dielectric constant εr, complex impedance Z", the dc conductivity σdc, and hopping frequency fH manifest that the dielectric relaxation of the x = 0 sample and the doped samples in the dielectric anomaly region (450-750 K) can be ascribed to the trap-controlled ac conduction around the doubly ionized oxygen vacancies and the localized hopping process of oxygen vacancies, respectively. The scaling behaviors reveal that the dynamic process of both electrons in the x = 0 sample and oxygen vacancies in the doped samples is temperature independent. The ferroelectric Curie-temperature Tc decreases slightly from 973K to 947K with increasing the doping level of W/Co. In addition, the dielectric loss exhibits a dielectric relaxation above 800K with the rather large activation energies (1.95 eV ⩽ Ea ⩽ 2.72 eV). [ABSTRACT FROM AUTHOR]

We have successfully synthesized the Aurivillius compounds SrBi5Ti4MnO18 and SrBi5Ti4Mn0.5 Co0.5O18 using a modified Pechini method. Both samples have an orthorhombic structure with the space group B2cb. The valence state of Mn is suggested to be +3 and the doped Co ions exist in the form of Co2+ and Co3+ based on the results of x-ray photoelectron spectroscopy. The sample SrBi5Ti4MnO18 exhibits a dominant paramagnetic state with the existence of superparamagnetic state as evidenced by the electron paramagnetic resonance results, whereas SrBi5Ti4Mn0.5Co0.5O18 undergoes a ferrimagnetic transition at 161K originating from the antiferromagnetic coupling of Co-based and Mn-based sublattices, and a ferromagnetic transition at 45K arising from the Mn3+-O-Co3+ (low spin) interaction. The sample SrBi5Ti4Mn0.5Co0.5O18 exhibits two dielectric anomalies. One corresponds to a relaxor-like dielectric relaxation which follows the Vogel-Fulcher function and the other dielectric relaxation obeys the Arrhenius law arising from the collective motion of oxygen vacancies. In addition, the sample SrBi5Ti4Mn0.5Co0.5O18 exhibits a magnetodielectric effect caused by the Maxwell-Wagner effect because of the conductivity of the sample. This is demonstrated by the fact that the activation energy in dielectric loss process is close to that for dc conductivity and the magnetodielectric effect is sensitive to the measured frequency. [ABSTRACT FROM AUTHOR]

We investigate the magnetic, dielectric, and magnetodielectric properties of rare-earth-substituted Aurivillius phase Bi6Fe1.4Co0.6Ti3O18. The room-temperature ferromagnetic behavior is observed in all samples, and the rare-earth-substituted samples exhibit an enhanced magnetization. The weak ferromagnetism can be ascribed to the spin canting of the antiferromagnetic coupling of the Fe-based and Co-based sublattices via Dzyaloshinsky-Moriya interaction. The dielectric loss of all samples exhibits two dielectric relaxation peaks corresponding to two different relaxation mechanisms. One relaxation process with Ea = 0.5 eV is related to the hoping process of oxygen vacancies and the other one with Ea = 1.6 eV can be ascribed to the intrinsic conduction. The Gd-doped sample exhibits a remarkable magnetodielectric effect (9.4%) at RT implying this Aurivillius phase may be the potential candidate for magnetodielectric applications. [ABSTRACT FROM AUTHOR]

We prepared a series of Bi1-xLaxFeO3 (0 ≤ x ≤ 0.2) ceramics with a sol-gel method and find that both the magnetization and dielectric constant show an abrupt anomaly near a critical field Hc, which is attributed to the destruction of the cycloidal antiferromagnetic spin structure. The critical field Hc decreases substantially from ∼20 T for the x = 0 sample [Y. F. Popov et al., JETP Lett. 57, 69 (1993)] to ∼2.8 T for the x = 0.17 sample and finally to 0 T for the x = 0.2 sample at room temperature (RT). It is also found that Hc increases with decreasing temperature. The variation of Hc with La substitution and temperature can be ascribed to the change in the magnetic anisotropy and isotropic superexchange interaction, respectively. We have also discussed the magnetodielectric effects in these samples in terms of the Ginzburg-Landau theory and the spin-phonon model. Moreover, increasing the doping level of La to 0.15 greatly improves the RT leakage-current and ferroelectric (FE) properties. A RT square-shaped FE hysteresis loop with remnant polarization (2Pr) as high as ∼64 μC/cm2 is obtained for the x = 0.15 sample. These results may be important for potential applications in BiFeO3-based magnetoelectric devices. [ABSTRACT FROM AUTHOR]

Flexible Ba2Bi4Ti5O18 and BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 heterostructure thin-film capacitors were deposited onto LaNiO3 buffered fluorophlogopite mica substrates using a cost-effective all-solution chemical solution deposition method. The Ba2Bi4Ti5O18 film showed a high recoverable energy storage density (Ure) of 41.2 J/cm3 and efficiency (η) of 79.1%. The BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 film showed improved energy storage properties with an ultrahigh Ure of 52.6 J/cm3 and η of 75.9% due to its enhanced breakdown field strength and polarization. Meanwhile, both films showed good mechanical flexibility, excellent fatigue endurance up to 5 × 108 cycles, and excellent thermal stability over a wide temperature range from room temperature to 160 °C. These results indicate that the lead-free, flexible Ba2Bi4Ti5O18 and BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 heterostructure thin film capacitors show promise in the field of flexible electronics. [ABSTRACT FROM AUTHOR]

Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility. Improved performance with the room-temperature mobility exceeding 35 cm2 V−1 s−1 and resistivity as low as 0.55 mΩ cm was realized. The results will open a low-cost route for preparation of large-area BSO thin films with improved optoelectronic properties through the solution method. [ABSTRACT FROM AUTHOR]

We investigate the effect of Jahn-Teller (JT) active Cu2+ ions on the structural, magnetic, and ferroelectric properties of Co1–xCuxCr2O4 (0 ≤ x ≤ 0.4). All the samples can be indexed with a cubic lattice with space group Fd 3 ¯ m at room temperature. All the samples undergo a paramagnetic-ferrimagnetic transition at TC and spiral ferrimagnetic ordering at TS. The magnetization measurements manifest that magnetization reversal occurs in the x = 0.2 and 0.3 samples. The x = 0.3 sample possesses a rather large polarization of 14 μC/m2, which is 7 times in magnitude compared with the CoCr2O4 single crystal. The analysis of the infrared active phonon modes implies that two T 1 u (IR) optical phonon modes are gradually split into a doublet at around 40 K, implying the lowering of lattice symmetry. The presence of a low-symmetry tetragonal phase becomes polar and enhances the electric polarization of Co0.7Cu0.3Cr2O4. [ABSTRACT FROM AUTHOR]

Developing lead-free film dielectric capacitors with high-performance of energy storage density, efficiency, fatigue endurance, and thermal stabilities is desirable. Here, we report energy storage properties in (1-x)BaTiO3-xBi3.25La0.75Ti3O12 thin films. It is revealed that a 0.6BaTiO3-0.4Bi3.25La0.75Ti3O12 thin film with a thickness of 280 nm and a crystallization temperature of 650 °C shows a breakdown strength of 3.23 MV/cm with a large polarization value and dielectric constant. An ultrahigh energy storage density of 61.1 J/cm3 and an efficiency of 84.2% are simultaneously achieved at room temperature. Additionally, excellent fatigue endurance after 6 × 109 cycles and good thermal stability up to 150 °C are observed, implying excellent energy storage performance in 0.6BaTiO3-0.4Bi3.25La0.75Ti3O12 thin films. [ABSTRACT FROM AUTHOR]

Thin film ferroelectric capacitors (TFFCs) with excellent energy storage have attracted increasing attention due to the electronic devices toward miniaturization and integration. BiFeO3 (BF)/ Bi3.25La0.75Ti3O12 (BL) based thin films are prepared by chemical solution deposition for energy storage. Ultrahigh energy storage with a recoverable energy density Ure of 54.9 J/cm3 and an efficiency g of 74.4% is observed in the bilayered BF/BL thin films. Further improvement of energy storage is realized in trilayered BL/BF/BL thin films with a Ure of 65.5 J/cm3 and an efficiency g of 74.2% at an electric field of 2753 kV/cm as well as excellent fatigue endurance up to 109 cycles. The results suggest that BF/BL based thin films can be used as lead-free TFFCs in energy storage applications. [ABSTRACT FROM AUTHOR]

Environmentally benign Bi3.25La0.75Ti3O12 (BLTO) thin film capacitors were prepared by a cost effective chemical solution deposition method for high energy density storage device applications. Low annealing temperature annealed BLTO thin films showed very slim hysteresis loops with high maximum and small remnant polarization values. Increasing the applied electric field to 2040 kV/ cm, the optimized BLTO thin films show a high recoverable energy density of 44.7 J/cm3 and an energy efficiency of 78.4% at room temperature. Additionally, the BLTO thin film capacitors exhibited excellent fatigue endurance after 4x108 cycles and a good thermal stability up to 140°C, proving their strong potential for high energy density storage and conversion applications. [ABSTRACT FROM AUTHOR]

(1-x)(0.94Bi0.5Na0.5TiO3-0.06BaTiO3)-xBiFeO3 (0 ≤ x ≤0.9) ternary ceramics were prepared by the modified Pechini method. X ray diffraction patterns manifest that the samples undergo a gradual structural transformation from the rhombohedral-tetragonal morphotropic phase boundary to the rhombohedral phase with the increasing content of BiFeO3. Room temperature ferromagnetism was observed in BiFeO3-rich samples with x ≥ 0.6, and this ferromagnetism can be ascribed to the suppression of the spiral spin structure with the canting of antiferromagnetically ordered spins. The BiFeO3-rich samples (x=0.6-0.8) exhibit superior ferroelectric properties with the maximum remanent polarization of 44.7 lC/cm², as confirmed by the positive-up negative-down measurement to exclude the contribution of leakage current. The coexistence of room-temperature ferromagnetism and ferroelectricity manifests that the lead-free BiFeO3-based solid solutions are quite promising multiferroic materials and may be important for potential applications in BFO-based magnetoelectric devices. [ABSTRACT FROM AUTHOR]

We investigate the effect of high magnetic-field annealing on the microstructural, ferroelectric, and magnetic properties of Bi6Fe1.4Co0.6Ti3O18 thin films. The magnetic field can lower the energy barrier for nucleation and improve the grain connectivity. The application of magnetic field of 6T parallel to the film plane can substantially enhance the remnant polarization Pr from 18.1 to 29 μC/cm² as a result of the variation in grain size and growth orientation caused by magnetic field annealing. Moreover, the remnant magnetization Mr is substantially improved from 2.48 to 4.56 emu/cm³ arising from the enhanced exchange coupling due to the better grain connectivity. These results demonstrate that high magnetic-field annealing is an effective way to optimize multiferroic properties of the Aurivillius compounds. [ABSTRACT FROM AUTHOR]

As a type of perovskite transparent conducting oxides, La-doped BaSnO3 is considered as a very important material to construct all transparent perovskite devices. The difficulty in achievement of large-area films with high electrical mobility has hindered the development of La-doped BaSnO3 films. Here, we report the results about chemical solution deposition of Ba0.92La0.08SnO3-δ (BLSO) films. The post-annealing and atmosphere as well as lattice mismatch have been investigated. Post-annealing at 1000 °C can obviously improve the performance due to the enhanced crystallization. Under post-annealing in N2 atmosphere the room-temperature resistivity and electrical mobility can achieve 3.25 mΩ cm and 11.09 cm² V-1 s-1, respectively, for the BLSO on LaAlO3 single crystal substrates due to the enhanced oxygen deficiencies. BLSO films with different orientation can be easily obtained by selection of the substrates, showing isotropic physical properties. Furthermore, the room-temperature resistivity and mobility are optimized to 1.8 mΩ cm and 23.04 cm² V-1 s-1 when SrTiO3 single crystal substrates with smaller lattice mismatch are used due to the decreased dislocation density. The results will provide an alternative route to fabricate large-area transparent conducting alkaline-earth stannate films with high performance using low-cost chemical solution deposition. [ABSTRACT FROM AUTHOR]

Electrical transport properties of La2/3Sr1/3VO3 (LSVO) thin films grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates have been investigated. It is found that the LSVO/LAO show metal-insulator transition when decreasing the temperature, while the LSVO/STO exhibit metallic behavior. The difference in transport properties of LSVO thin films has been discussed based on the variation of oxygen content and can be attributed to different oxygen substrate-to-film transfer. These results highlight the crucial role of oxygen stoichiometry in determining the physical properties of LSVO and the importance of oxygen-substrate contribution in LSVO thin films. [ABSTRACT FROM AUTHOR]

The magnetic and ferroelectric properties of Co-doped Bi6Fe2Ti3O18 thin films Bi6Fe2-xCoxTi3O18 (BFCTO) (0 ≤x≤ 1) are investigated. The coexistence of room-temperature ferromagnetism and ferroelectricity is observed in BFCTO thin films. The x = 0.6 sample exhibits a higher remnant magnetization Mr of 8.41 emu/cm3 and a remnant polarization Pr of 17.6 μC/cm2 compared with other BFCTO thin films. The ferromagnetism can be ascribed to the spin canting of Fe- and Co-based sublattices via the Dzyaloshinskii-Moriya interaction [I. Dzyaloshinsky, J. Phys. Chem. Solids 4, 241 (1958); T. Moriya, Phys. Rev. 120, 91 (1960)]. The change in the remnant polarization is discussed in terms of the variation of grain size and oxygen vacancies caused by Co-doping. [ABSTRACT FROM AUTHOR]

Single-phase polycrystalline SrBi5Ti4CrO18 and SrBi5Ti4Cr0.5Co0.5O18 were synthesized by a modified Pechini method. Both samples have an orthorhombic structure with the space group B2cb. The valence state of Cr is suggested to be +3 and the Co ions exist in the form of Co2+ and Co3+ based on the results of x-ray photoelectron spectroscopy. The sample SrBi5Ti4Cr0.5Co0.5O18 exhibits the paramagnetic state, whereas SrBi5Ti4Cr0.5Co0.5O18 undergoes a ferrimagnetic transition at 89K originating from the antiferromagnetic coupling of Cr-based and Co-based sublattices. In addition, SrBi5Ti4Cr0.5Co0.5O18 shows a typical spin-glass behavior below 89K with zν =6.02 and τ0=(1.75±0.33)x10-14 s as evidenced by the results of the frequency dependence of ac susceptibility and magnetic relaxation measurements. In particular, both the dielectric constant and dielectric loss of SrBi5Ti4Cr0.5Co0.5O18 exhibit the characteristics of dielectric relaxation around 89K with the activation energy of (0.14±0.02) eV, which can be ascribed to the electron hopping of Co2+-VO-Co3+ through the bridging oxygen vacancies. [ABSTRACT FROM AUTHOR]

We have successfully synthesized the Aurivillius compounds SrBi5Ti4MnO18 and SrBi5Ti4Mn0.5 Co0.5O18 using a modified Pechini method. Both samples have an orthorhombic structure with the space group B2cb. The valence state of Mn is suggested to be +3 and the doped Co ions exist in the form of Co2+ and Co3+ based on the results of x-ray photoelectron spectroscopy. The sample SrBi5Ti4MnO18 exhibits a dominant paramagnetic state with the existence of superparamagnetic state as evidenced by the electron paramagnetic resonance results, whereas SrBi5Ti4Mn0.5Co0.5O18 undergoes a ferrimagnetic transition at 161K originating from the antiferromagnetic coupling of Co-based and Mn-based sublattices, and a ferromagnetic transition at 45K arising from the Mn3+-O-Co3+ (low spin) interaction. The sample SrBi5Ti4Mn0.5Co0.5O18 exhibits two dielectric anomalies. One corresponds to a relaxor-like dielectric relaxation which follows the Vogel-Fulcher function and the other dielectric relaxation obeys the Arrhenius law arising from the collective motion of oxygen vacancies. In addition, the sample SrBi5Ti4Mn0.5Co0.5O18 exhibits a magnetodielectric effect caused by the Maxwell-Wagner effect because of the conductivity of the sample. This is demonstrated by the fact that the activation energy in dielectric loss process is close to that for dc conductivity and the magnetodielectric effect is sensitive to the measured frequency. [ABSTRACT FROM AUTHOR]

We investigate the magnetic, dielectric, and magnetodielectric properties of rare-earth-substituted Aurivillius phase Bi6Fe1.4Co0.6Ti3O18. The room-temperature ferromagnetic behavior is observed in all samples, and the rare-earth-substituted samples exhibit an enhanced magnetization. The weak ferromagnetism can be ascribed to the spin canting of the antiferromagnetic coupling of the Fe-based and Co-based sublattices via Dzyaloshinsky-Moriya interaction. The dielectric loss of all samples exhibits two dielectric relaxation peaks corresponding to two different relaxation mechanisms. One relaxation process with Ea = 0.5 eV is related to the hoping process of oxygen vacancies and the other one with Ea = 1.6 eV can be ascribed to the intrinsic conduction. The Gd-doped sample exhibits a remarkable magnetodielectric effect (9.4%) at RT implying this Aurivillius phase may be the potential candidate for magnetodielectric applications. [ABSTRACT FROM AUTHOR]