Improved ferroelectric polarization of V-doped Bi6Fe2Ti3O18 thin films prepared by a chemical solution deposition.

We prepared V-doped Bi₆Fe₂Ti₃O₁₈ thin films on Pt/Ti/SiO₂/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi₆Fe₂Ti₃O₁₈ thin films. The Bi_5.97Fe₂Ti_2.91V_0.09O₁₈ thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30μC/cm² in Bi_5.97Fe₂Ti_2.91V_0.09O₁₈ thin film compared with 10μC/cm² in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi₆Fe₂Ti₃O₁₈ thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n=5 Aurivillius thin films. [ABSTRACT FROM AUTHOR]