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Design strategy for p-type transparent conducting oxides.

Authors :
Hu, L.
Wei, R. H.
Tang, X. W.
Lu, W. J.
Zhu, X. B.
Sun, Y. P.
Source :
Journal of Applied Physics; 10/14/2020, Vol. 128 Issue 14, p1-11, 11p
Publication Year :
2020

Abstract

Transparent conducting oxides (TCOs), combining the mutually exclusive functionalities of high electrical conductivity and high optical transparency, lie at the center of a wide range of technological applications. The current design strategy for n-type TCOs, making wide bandgap oxides conducting through degenerately doping, obtains successful achievements. However, the performances of p-type TCOs lag far behind the n-type counterparts, primarily owing to the localized nature of the O 2 p -derived valence band (VB). Modulation of the VB to reduce the localization is a key issue to explore p-type TCOs. This Perspective provides a brief overview of recent progress in the field of design strategy for p-type TCOs. First, the introduction to principle physics of TCOs is presented. Second, the design strategy for n-type TCOs is introduced. Then, the design strategy based on the concept of chemical modulation of the valence band for p-type TCOs is described. Finally, through the introduction of electron correlation in strongly correlated oxides for exploring p-type TCOs, the performance of p-type TCOs can be remarkably improved. The design strategy of electron correlation for p-type TCOs could be regarded as a promising material design approach toward the comparable performance of n-type TCOs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
128
Issue :
14
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
146463087
Full Text :
https://doi.org/10.1063/5.0023656