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Electron spin dynamics of dilute nitride GaNAs quantum well (QW)-InAs quantum dots (QDs) tunnel-coupled structures having different QW thicknesses were studied via circularly polarized time-resolved photoluminescence. The rate equation fitting considering a capture of QD electron spins by the GaNAs localized states via tunnel transfer revealed that the spin amplification dynamics of the QDs depended on the QW thickness. For the QW thickness of 5 nm, although the temporal amplification of QD electron spin polarization was slow owing to the weak wavefunction coupling between the QW and QD, the long duration of high electron spin polarization was observed because of the suppressed capture of QD majority spins relative to the efficient removal of QD minority spins. When the QW thickness increased from 5 to 20 nm, the strong spin filtering in GaNAs and strong wavefunction coupling led to the fast amplification of QD electron spin polarization with high initial spin polarization. However, the spin polarization rapidly decays after the amplification owing to the removal of both QD majority and minority spins, originating from many effective localized states. These results indicate that the time-dependent QD electron spin polarization and the resultant spin amplification can be widely tuned by changing the thickness of the tunnel-coupled GaNAs QW. [ABSTRACT FROM AUTHOR]

A correlation between the spin-polarized carrier transfer and spin relaxation processes of a two-dimensional electron gas (2DEG) in an InGaN/GaN quantum well (QW) is investigated by time-resolved Kerr rotation spectroscopy at low temperature. Upon resonant excitation with the GaN barrier band edge energy, the spin polarization of the 2DEG in the QW is acquired from the transfer of spin-polarized photoexcited carriers. Significantly, the spin relaxation time of the 2DEG is enhanced to be as long as 1 ns along with the carrier transfer. It is demonstrated that by tailoring the Rashba and Dresselhaus spin–orbit couplings to approach a spin-degenerate surface, the screening effect of the polarization field leads to a longer spin relaxation time and effective manipulation of the spin relaxation. The polarization field screening induced enhancement of the spin relaxation time is significant in the way for the development of GaN-based spintronic devices. [ABSTRACT FROM AUTHOR]

We address the temperature influence on the precessional motion of electron spins under a transverse magnetic field, studied in GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field, the TRKR measurements show the robustness of carrier's spin polarization against temperature, which can be easily traced in an extended range up to 250 K. By tuning the pump-probe wavelength to the exciton bound to a neutral donor transition, we observed a remarkably long-lasting spin coherence (with dephasing time T 2 * > 14 ns) limited by the spin hopping process and exchange interaction between the donor sites, as well as the ensemble spread of the g-factor. The temperature dependent spin dephasing time revealed a double linear dependence due to the different relaxation mechanisms active in respective temperature ranges. We observed that the increase in sample temperature from 5 K to 250 K leads to a strong T 2 * reduction by almost 98%/97% for the excitation wavelengths of 823/821 nm. Furthermore, we noticed that the temperature increase not only causes the reduction of spin lifetime, but can also lead to the variation of the electron g-factor. Additionally, the spin dynamics were studied through the dependencies on the applied magnetic field and optical pump power. [ABSTRACT FROM AUTHOR]

A transmission-grating-sampled circular dichroism absorption spectroscopy (TGS-CDAS) and its theoretical model are developed sensitively to measure decay dynamics of a transient spin grating (TSG). A binary transmission grating with the same period as TSG is set behind TSG. It allows only a same small part of each period in TSG measured by circular dichroism absorption effect of a probe. In this way, the zero average of spin-dependent effects measured over a whole period in TSG is avoided so that TGS-CDAS has a high sensitivity to spin evolution in TSG. Spin transport experiments are performed on GaAs/AlGaAs quantum wells. Experimental results prove the feasibility and reliability of TGS-CDAS. [ABSTRACT FROM AUTHOR]

In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ~20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ~–75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. [ABSTRACT FROM AUTHOR]

Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump–probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing us to obtain the spin–orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4 V/cm with velocities higher than 2 µm/ns, we observed a dependence of both bulk and structure-related spin–orbit interactions on the velocity magnitude. A remarkable feature is the increase in the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10 µm/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information on the application of drift models in spin–orbit fields and about limitations for the operation of spin transistors. [ABSTRACT FROM AUTHOR]

Spin transport properties from the GaAs/AlGaAs superlattice (SL) to InGaAs quantum dots (QDs) are studied by circularly polarized time-resolved photoluminescence spectroscopy of QD excited states with the selective excitation of SL miniband states. For the SL with a thinner barrier, we observe an effective carrier transport in SL owing to the stronger overlap of wavefunctions of adjacent quantum wells and a simultaneous highly efficient carrier injection into QDs. Moreover, the SL with a thinner barrier demonstrates a quantum spin transport to QDs maintaining high spin polarization during the transport process. [ABSTRACT FROM AUTHOR]

We used spatially- and time-resolved Kerr rotation microscopy to show that in lateral wire-like structures, based on a modulation-doped GaAs-AlGaAs quantum well, an optically initialized spin polarization can be deterministically transferred to specific lateral positions, employing the persistent spin helix (PSH). To this end, we show that confinement in two directions leads to a strong enhancement of the effective decay time of spin polarization, which can be exploited to transfer spin polarization over relatively large lateral distances. This is demonstrated by the investigation of L-shaped wire-like lateral structures, where the legs are positioned in directions parallel and perpendicular to the wave vector of the PSH. [ABSTRACT FROM AUTHOR]

The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p+ GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample. [ABSTRACT FROM AUTHOR]

The spin polarization under low electric fields ( =300 V/cm) at low temperatures has been studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was created by optical spin orientation using circularly polarized light and the inverse spin-Hall effect was employed to measure the spin polarization current. We observed an obvious spin depolarization especially at lower temperatures (80-120K). We ascribed the spin depolarization of the photoinduced electrons to the heating effect from the low electric fields (the low field regime 50-300V/cm). This spin depolarization due to the heating effect is sensitive to temperature and electric field, suggesting a wide range of potential applications and devices. [ABSTRACT FROM AUTHOR]

We propose a silicene-based lateral resonant tunneling device by placing silicene under the modulation of top nonmagnetic/ferromagnetic/nonmagnetic sandwich nanogates. Following the electric-tunable bandgap of silicene, lateral double-barrier structure is formed by imposing the flexible electrostatic modulation on top gates. By aligning the spin and valley-resolved confined states in magnetic well, remarkable spin/valley polarization can be accessed through spinor-relying resonant tunneling mechanism. Under the electrostatic, magnetic, and size manipulation, the confined well state can be efficiently engineered, and the observed spin and valley polarization can be further flexibly tuned, offering some helpful strategies to construct spinor-electronic logic atomically. [ABSTRACT FROM AUTHOR]

We investigate the electron-spin injection dynamics via tunneling from an In0.1Ga0.9As quantum well (QW) to In0.5Ga0.5As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs. [ABSTRACT FROM AUTHOR]

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge0.8Si0.2 quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge. [ABSTRACT FROM AUTHOR]