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Observation of optical spin injection into Ge-based structures at room temperature.
- Source :
-
Applied Physics Letters . 6/17/2013, Vol. 102 Issue 24, p242104. 4p. 1 Diagram, 4 Graphs. - Publication Year :
- 2013
-
Abstract
- Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge0.8Si0.2 quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 88345293
- Full Text :
- https://doi.org/10.1063/1.4811495