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Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes.
- Source :
-
Journal of Applied Physics . 2014, Vol. 116 Issue 5, p054506-1-054506-6. 6p. 1 Diagram, 4 Graphs. - Publication Year :
- 2014
-
Abstract
- In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ~20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ~–75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97410147
- Full Text :
- https://doi.org/10.1063/1.4891996