Cite
Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes.
MLA
Awan, I. T., et al. “Effects of Be Acceptors on the Spin Polarization of Carriers in P-i-n Resonant Tunneling Diodes.” Journal of Applied Physics, vol. 116, no. 5, Aug. 2014, pp. 054506-1-054506-6. EBSCOhost, https://doi.org/10.1063/1.4891996.
APA
Awan, I. T., Galeti, H. V. A., Galvão Gobato, Y., Brasil, M. J. S. P., Taylor, D., & Henini, M. (2014). Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes. Journal of Applied Physics, 116(5), 054506-1-054506-6. https://doi.org/10.1063/1.4891996
Chicago
Awan, I. T., H. V. A. Galeti, Y. Galvão Gobato, M. J. S. P. Brasil, D. Taylor, and M. Henini. 2014. “Effects of Be Acceptors on the Spin Polarization of Carriers in P-i-n Resonant Tunneling Diodes.” Journal of Applied Physics 116 (5): 054506-1-054506-6. doi:10.1063/1.4891996.