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A study is conducted to show that the combination of thermal activation and ultraviolet radiation promotes a selective bonding rearrangement of the organosilicate glass matrix. The rearrangement includes a transition of the large angle Si-O-Si bonds towards the more stable small angle or 'network' configuration (~144 degree), as well as an increase in the degree of cross-linking of the matrix through condensation reactions and some minor loss of CH3 groups.

The diffusion of typical metal atomic layer deposition (ALD) precursors inside porous dielectric films is studied and how surface treatments can be used to efficiently prevent ALD coating inside the porous network of micro-and mesoporous dielectric substrates is investigated. Plasma treatments for surface densification and polymer deposition are used to seal the surface pores and provide a new starting surface for ALD growth.

The growth of tungsten nitride carbide W[N.sub.x][C.sub.y] films obtained from layer deposition using triethylboron, tungsten hexafluoride, and ammonia precursors is determined by the density and type of reactive sites. A transient regime is not observed for W[N.sub.x][C.sub.y] growth on hydrogen-terminated silicon with the initial growth being dominated by the reduction of tungsten hexafluoride to tungsten.

The interface formation of atomic layer deposition (ALD) binary tantalum nitride and ternary (WNC) systems with dense dielectric substrates is characterized. Depending on the chemical nature of precursors and substrate, ALD processes can either form specific interfacial organization or induce dielectric modifications, in any case, leading to unexpected metal-dielectric interactions.