Search

• La-doped SrTiO 3 /TiO 2 eutectic crystals were grown by a micro-pulling-down method. • Grown crystals were composed of the TiO 2 rod phase in the SrTiO 3 matrix phase. • Diameter of TiO 2 rods systematically decreased as the growth rate was increased. • Grown crystal exhibited a lower thermal conductivity than the SrTiO 3 single crystal. • ZT s of crystals grown at 0.02 and 0.5 mm/min were 0.015 and 0.025, respectively. La-doped SrTiO 3 /TiO 2 (La:STO/TO) eutectic crystals were grown by a micro-pulling-down method at various growth rates to control the eutectic morphology and thermoelectric properties. The La:STO/TO eutectic crystals were composed of a TiO 2 (TO) rod phase in the SrTiO 3 (STO) matrix phase for all growth rates. The diameter of the TO rod phase systematically decreased as the growth rate was increased, according to the Jackson–Hunt model, and the diameter reached approximately 1 μm at a growth rate of 1 mm/min. The La:STO/TO eutectic crystal exhibited a lower thermal conductivity than the Nb:STO single crystal, owing to the decrease in the lattice thermal conductivity by phonon scattering at boundaries in the eutectic morphology. The figures of merit, ZT s, of the La:STO/TO eutectic crystals grown at 0.02 and 0.5 mm/min growth rates were 0.015 and 0.025, respectively. The faster growth rate led to an increased ZT, owing to the decrease in electrical resistivity. [ABSTRACT FROM AUTHOR]

• La 2 Hf 2 O 7 crystals (m.p.: 2418 °C) were grown by the µ-PD method using a W crucible. • The La 2 Hf 2 O 7 grown at a rate of 2.00 mm/min had some cracks. • The La 2 Hf 2 O 7 grown at a rate of 0.07 mm/min was transparent without any cracks. • The LHO[0.07 mm/min] had a transmittance of over 70% in the range of 450–800 nm. • The XRC of the LHO[0.07 mm/min] showed a sharp peak with a FWHM of 138 arcsec. La 2 Hf 2 O 7 crystals with a melting point of ∼2418 °C were grown by the micro-pulling-down method using a W crucible and deoxygenated ZrO 2 insulators. A La 2 Hf 2 O 7 crystal grown at a rate of 0.07 mm/min (LHO[0.07 mm/min]) showed a high transparency without any visible cracks and inclusions, while a La 2 Hf 2 O 7 crystal grown at a rate of 2.00 mm/min had some cracks. The LHO[0.07 mm/min] crystal had a transmittance of over 70% in the wavelength range of 450–800 nm. The X-ray rocking curve of the LHO[0.07 mm/min] crystal showed a symmetric sharp peak with a full width at half maximum of 138 arcsec. The Laue image revealed that the grown crystals were single crystals. [ABSTRACT FROM AUTHOR]

• La 2 Zr 2 O 7 crystals were grown by micro-pulling-down method using Mo & W crucibles. • Grown crystals under Ar + 3%H 2 were composed of La 2 Zr 2 O 7 phase including Mo and W. • A grown crystal under Ar using W crucible & deoxygenated insulator was La 2 Zr 2 O 7. • The La 2 Zr 2 O 7 crystal indicated a transmittance exceeding 70% after post-annealing. La 2 Zr 2 O 7 crystals with a melting point of 2283 °C are grown via the micro-pulling-down (μ-PD) method using Mo and W crucibles to expand the possibility of material research of functional single crystals with high melting points by the μ-PD method. La 2 Zr 2 O 7 crystals grown using Mo and W crucibles under an Ar + 3% H 2 atmosphere are composed of a La 2 Zr 2 O 7 main phase, which includes Mo and W. However, a La 2 Zr 2 O 7 crystal without W can be grown under an Ar atmosphere using the μ-PD method using a W crucible and deoxygenated ZrO 2 insulators. After post-annealing in air at 1000 °C, the La 2 Zr 2 O 7 crystal without W becomes colorless and transparent, indicating a transmittance exceeding 70% in wavelengths ranging from 450 to 800 nm. [ABSTRACT FROM AUTHOR]

• (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 single crystal was grown by the micro-pulling-down method. • Quenching temperature of (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 was determined to be 526 K. • Light output of (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 was determined to be ~12,000 photons/MeV. We have grown Ce-doped (La,Y) 2 Si 2 O 7 single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 composition. The observed thermal quenching process could be characterized by the quenching temperature (T 50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 has a great potential for application in scintillation materials. [ABSTRACT FROM AUTHOR]