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A novel moderately thermophilic heterotrophic bacterium, designated strain 143-21T, was isolated from a deep-sea hydrothermal chimney sample collected from the Central Indian Ridge at a depth of 2 440 m. Phylogenetic analysis indicated that strain 143-21T belongs to the genus Crassaminicella . It was most closely related to Crassaminicella thermophila SY095T (96.79 % 16S rRNA gene sequence similarity) and Crassaminicella profunda Ra1766HT (96.52 %). Genomic analysis showed that strain 143-21T shares 79.79–84.45 % average nucleotide identity and 23.50–29.20 % digital DNA–DNA hybridization with the species of the genus Crassaminicella , respectively. Cells were rod-shaped, non-motile, Gram-positive-staining. Terminal endospores were observed in stationary-phase cells when strain 143-21T was grown on Thermococcales rich medium. Strain 143-21T was able to grow at 30–60 °C (optimum, 50 °C), pH 6.5–8.5 (optimum, pH 7.0) and in 1.0–7.0 % NaCl (w/v; optimum 2.0 %, w/v). Strain 143-21T utilized fructose, glucose, maltose, mannose, ribose, N-acetyl-d-(+)-glucosamine and casamino acids, as well as amino acids including glutamate, lysine, histidine and cysteine. The main fermentation products from glucose were acetate (2.07 mM), H2 and CO2. It did not reduce elemental sulphur, sulphate, thiosulphate, sulphite, fumarate, nitrate, nitrite and Fe (III). The predominant cellular fatty acids were C14 : 0 (48.8 %), C16 : 0 (12.9 %), and summed feature 3 (C16 : 1 ω7c and/or C16 : 1 ω6c; 10.2 %). The major polar lipids were diphosphatidylglycerol, phosphatidylethanolamine and phosphatidylglycerol, as well as two unidentified phospholipids and four unidentified aminolipids. No respiratory quinones were detected. Based on its phylogenetic analysis and physiological characteristics, strain 143-21T is considered to represent a novel species of the genus Crassaminicella , for which the name Crassaminicella indica sp. nov. is proposed. The type strain is strain 143-21T (=DSM 114408T= MCCC 1K06400T).

In this article, a novel p-GaN high-electron-mobility transistor (HEMT) with a built-in Schottky barrier diode (SBD) is proposed and investigated by TCAD simulation. The anode contact of the integrated SBD is isolated from the ohmic contact of the source electrode by a p-GaN isolation region. The cathode of the SBD is connected to the drain electrode. In the proposed Schottky barrier diode/HEMT (SB-HEMT), a channel under the p-GaN isolation region is turned on during forward conduction to further reduce the specific on-resistance ( $R_{{on},sp}$ ). With a minimum sacrifice on $R_{{on},sp}$ , the reverse on-state voltage, $V_{R-{on}}$ (at a current density of 50 mA/mm), for the SB-HEMT is reduced by 33% (from 2.43 to 1.62 V) when compared with a conventional HEMT (C-HEMT). Compared with the C-HEMT with a separate on-chip SBD (C-HEMT/SBD), the SB-HEMT shows much better trade-off between $V_{R-{on}}$ and $R_{{on},sp}$ . The total switching loss ( $E_{total}$ ) of the proposed SB-HEMT with resistive load is lower than that of the C-HEMT and is reduced by up to 21% when compared with that of the C-HEMT/SBD with different area ratio between the HEMT and SBD regions.

Conventional di/dt and dv / dt control and gate protection techniques for gallium nitride (GaN) power transistors usually employ external controllers, isolation circuits, discrete pull-up, and pull-down resistors. With large number of components, power modules become more complex and may introduce additional parasitic. Gate driver ICs with segmented output stages and dynamic gate driving have been reported previously to be effective in simultaneously suppressing gate ringing and overshoot voltage while maintaining fast switching speed. However, the programming for dynamic gate driving is rather complicated, requiring the user to load a sequence of driving patterns obtained from trial and error ahead of time. This article presents a gate driver IC for E-mode GaN power transistors with seven segmented output stages. More importantly, it offers a simplified programming method for the dynamic gate driving pattern. The optimal gate drive pattern can be defined by simply adjusting one external bias resistor. The proposed method eliminates the complex trial and error digital control, and can potentially promoting the wider acceptance of dynamic gate driving by the industry. The timing resolution for the gate drive pattern can be varied in steps from 0.5 to 5 ns. It can also be used to drive many commercially available GaN power transistors.

BackgroundNeuropsychiatric symptoms (NPSs) belong to a category of non-motor symptoms of Parkinson's disease (PD), which seriously compromise the quality of life and prognosis of PD. This study focused on the correlations between NPSs, free radicals, neuroinflammatory factors, and neuropathological proteins in cerebrospinal fluid (CSF) in patients with PD, aiming to provide insights into the potential mechanisms and therapeutic target for PD with NPSs (PD-NPSs).MethodsIn total, 129 patients with PD were enrolled and assessed by the Neuropsychiatric Symptoms Inventory (NPI); they were divided into the PD-NPSs group (75 patients) and PD with no NPSs (PD-nNPSs) group (54 patients). The levels of hydrogen peroxide (H2O2) and nitric oxide (NO), and hydroxyl radical (·OH), anti-oxidative enzyme, neuroinflammatory factors, and neuropathological proteins in CSF from patients with PD were measured. The levels of the above variables were compared between PD-NPSs and PD-nNPSs groups, and correlation analyses among the above variables were conducted.Results(1) The levels of H2O2 and NO in CSF from the PD-NPSs group were significantly elevated compared with the PD-nNPSs group (p = 0.001), and NPI score positively correlated with the levels of H2O2 and NO (r = 0.283, P = 0.001; r = 0.231, P = 0.008). Reversely, total superoxide dismutase (tSOD) activity in CSF from the PD-NPSs group was significantly reduced compared with the PD-nNPSs group (p = 0.011), and negatively correlated with NPI score (r = −0.185, p = 0.036). (2) The tumor necrosis factor (TNF)-α level in CSF from the PD-NPSs group was significantly decreased compared with the PD-nNPSs group (p = 0.002) and negatively correlated with NPI score (r = −0.211, p = 0.016). (3) The total tau (T-tau) level in CSF from the PD-NPSs group was significantly higher than in the PD-nNPSs group (p = 0.014) and positively correlated with the NPI score (r = 0.167, p = 0.060). (4) The levels of H2O2 and NO positively correlated with the T-tau level in CSF from the PD-NPSs group (r = 0.183, p = 0.039; r = 0.251, P = 0.004), and the levels of TNF-α and T-tau showed a negative correlation (r = −0.163, p = 0.067).ConclusionOxidative distress characterized by the elevations of H2O2 and NO levels may closely correlate with the neurodegeneration in brain regions related to PD-NPSs. Thus, therapeutic antioxidants may become an important target for PD-NPSs therapy.

Endosomal sorting complex required transport (ESCRT) III proteins are essential for membrane remodeling and repair across all domains of life. Eukaryotic ESCRT-III and the cyanobacterial homologs PspA and Vipp1/Imm30 remodel membrane into vesicles, rings, filaments and tubular rods structures. Here our microscopy analysis showed that multicellular bacteria, referred to as magnetoglobules, possess multiple compartments including magnetosome organelles, polyphosphate granules, vesicles, rings, tubular rods, filaments and MVB-like structures. Therefore, membrane remodeling protein PspA might be required for the formation of these compartments, and contribute to the morphogenesis and evolution of multicellularity. To assess these hypotheses, we sequenced nine genomes of magnetoglobules and found a significant genome expansion compared to unicellular magnetotactic bacteria. Moreover, PspA was ubiquitous in magnetoglobules and formed a distinct clade on the tree of eubacterial and archaeal ESCRT-III. The phylogenetic feature suggested the evolution of magnetoglobules from a unicellular ancestor of deltaproteobacterium. Hetero-expression of ellipsoidal magnetoglobulepspA2gene alone inEscherichia coliresulted in intracellular membrane aggregation. GFP fusion labeling revealed polar location of PspA2 in rod-shaped unicells and regular interval location in filamentous cells. Cryo-electron tomography analysis showed filament bundle, membrane sacculus, vesicles and MVB-like structure in the cells expressing PspA2. Moreover, electron-dense area with a similar distribution as GFP-PspA2 foci in filamentous cells changed the inward orientation of the septum, which might interfere with the cell division. Collectively, these results show the membrane remodeling function of magnetoglobule PspA proteins, which may contribute to morphogenesis and the evolution of multicellularity of magnetotactic bacteria.

In this paper, in order to investigate the size effect on the flexural behavior of ultra-high-performance concrete (UHPC) beams, two groups UHPC beams with sizes of, (small) and (large), were tested through four-point bending test. Each group consists of four UHPC beams with different rebar type and reinforcement ratio. The experimental results showed that the flexural strength, normalized deflection, and fracture toughness of HRB400 steel reinforced UHPC beams was not affected by size effect. The normalized deflection at ultimate bearing capacity of GFRP reinforced UHPC beams is affected by size effect, but no size effect was shown for whole deflection process. The flexural strength and fracture toughness of GFRP reinforced UHPC beams changed from having size effect to no size effect with the increase of reinforcement ratio. Furthermore, the maximum crack width, number of cracks and average crack spacing of both UHPC beams were sensitive to the size of specimen, while no significant size effect was shown for ductility of both UHPC beams.

A miniaturized atomic spin-exchange relaxation-free (SERF) co-magnetometer measures angular velocity using a balanced polarimetry technique which is easily affected by the laser power. A laser power closed-loop control system is usually used to suppress the fluctuation of the laser power. Although this method can greatly eliminate the fluctuation of the in-loop laser power (the feedback laser), it cannot fully eliminate the fluctuation of the out-of-loop laser power (the signal measurement laser). This leads to SERF gyroscope laser power error, which reduces the inertial measurement accuracy. In this paper, the influence mechanism of the split ratio (the ratio of the in-loop laser power to the out-of-loop laser power) on the out-of-loop laser power control accuracy is analyzed by establishing a laser power transmission model inside and outside the loop. Moreover, a method is developed to improve the out-of-loop laser power stability by optimizing the split ratio. Comparative experiments showed that the relative Allan standard deviation of the out-of-loop laser power decreased from 5.48 × 10−6 to 2.62 × 10−6 at 100 s, and decreased by an order of magnitude from 1.76 × 10−5 to 3.30 × 10−6 at 1000 s. Correspondingly, the rate ramp coefficient in the Allan standard deviation curve of the SERF gyroscope test data decreased from 1.312 [(°/h)/h] to 0.246 [(°/h)/h]. And the bias stability increased from 0.032 °/h to 0.019 °/h. Therefore, the proposed method can improve the long-term stability of the probe laser power and effectively suppress the laser power error of the SERF gyroscope.

An accurate method for the evaluation of breakdown voltages (BVs) in the superjunction-like (SJ-like) power devices is presented. This brief investigates the conventional SJ (c-SJ), the insulator pillar SJ (I-SJ), and the high-permittivity ( $\text{H}{k}$ ) structures. Based on the numerical calculations of the electric field line (EFL) distribution, the electric field profiles along the EFLs can be accurately obtained. This ensures the accurate determination of the impact ionization integrals and BV. The technology computer-aided design (TCAD) simulations confirm the validity of the proposed method. The proposed method could be of great significance for the optimization of the specific ON-resistance ( ${R} _{ \text {ON,sp}}$ ) and could provide a better understanding of the SJ-like power devices.

Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers’ interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

Aloe vera (L.) Burm.f. is widely used as laxative drugs, cosmetics, and functional food due to a variety of therapeutic effects. However, several studies indicated a colonic carcinogenic activity of Aloe vera. But the underline mechanism has not been well clarified. This study aimed to explore the potential mechanism at the post-transcriptional level. Identification of Differential Expressed Alternative Splicing (DEAS) genes and events and the corresponding functional enrichment analyses were conducted on RKO cells after treated with Aloe vera aqueous extract and its two active components, aloin and aloesin. And RT-qPCR was conducted for validation. Results indicated that they induced 2200, 2342 and 2133 DEAS events, respectively. The GO enrichment and the COG classification results of DEAS genes showed that they were associated with transcription, as well as functions like signal transduction mechanisms. Moreover, DEAS genes related to the two colorectal cancerous pathways, Wnt and Notch pathways, were annotated. In conclusion, aloe extract, aloin and aloesin significantly regulated the DEAS profile of RKO cells. The colonic carcinogenicity of Aloe vera may due to its post-transcriptional regulatory activity through Alternative Splicing (AS) on genes, especially on Wnt-related and Notch-related key genes.

A new lateral power metal-oxide-semiconductor field-effect transistor (MOSFET) with dual conduction paths and high- ${k}$ passivation is proposed. The high- ${k}$ passivation enables the dual conduction paths to realize the double reduced surface field (RESURF) action and facilitates the formation of an accumulation layer during forward conduction. The proposed device offers a 42% reduction in specific on-resistance ( ${R}_{{ON},{SP}}{)}$ when compared to a similar size baseline device with the same breakdown voltage (BV). The technology computer-aided design (TCAD) simulation results, based on a $0.5~\mu \text{m}$ bipolar-CMOS-DMOS (BCD) compatible process, show that the proposed device is able to provide a ${R}_{{ON},{SP}}$ as low as 0.28 $\text{m}\Omega \cdot $ cm2 with a BV of 92 V.

Deep-sea hydrothermal vents are known as chemosynthetic ecosystems. However, high temperature vents emit light that hypothetically can drive photosynthesis in this habitat. Metagenomic studies have sporadically reported the occurrence of phototrophic populations such as cyanobacteria in hydrothermal vents. To determine how geographically and taxonomically widespread phototrophs are in deep-sea hydrothermal vents, we collected samples from three niches in a hydrothermal vent on the Southwest Indian Ridge and carried out an integrated metagenomic analysis. We determined the typical community structures of microorganisms found in active venting fields and identified populations of known potential chlorophototrophs and retinalophototrophs. Complete chlorophyll biosynthetic pathways were identified in all samples. By contrast, proteorhodopsins were only found in active beehive smoker diffusers. Taxonomic groups possessing potential phototrophy dependent on semiconductors present in hydrothermal vents were also found in these samples. This systematic comparative metagenomic study reveals the widespread distribution of phototrophic bacteria in hydrothermal vent fields. Our results support the hypothesis that the ocean is a seed bank of diverse microorganisms. Geothermal vent light may provide energy and confer a competitive advantage on phototrophs to proliferate in hydrothermal vent ecosystems. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s42995-021-00121-y.

Dead-times are necessary in switching output stage to avoid shoot-through current between the high side (HS) and the low side (LS) power transistors. However, excessively long dead-times can lead to unwanted reverse conduction and power loss. Sensing the duration of reverse conductions are especially difficult for high-voltage enhancement mode ( e -mode) gallium nitride (GaN) HEMTs due to their fast switching speed. High-precision sensing circuits are required for dead-time correction as the load current changes and to withstand large voltage swings. Traditional CMOS-based sensing circuits (e.g. standard logic gates) are not suitable for GaN-based converters as they can only handle limited voltage ranges. In addition, severe undershoots (up to -4 V) may damage the sensing circuit. Here, a gate driver IC for e -mode GaN power output stages capable of detecting the presence of reverse conduction with a best resolution of 0.66 ns, a dead-time adjustment resolution of 0.33 ns, and with on-chip closed-loop control is presented. In addition, a novel reverse conduction sensing circuit that can accommodate the large voltage swings at the switching node (SW) is also described.

A novel moderately thermophilic, anaerobic, heterotrophic bacterium (strain SY095T) was isolated from a hydrothermal vent chimney located on the Southwest Indian Ridge at a depth of 2730 m. Cells were Gram-stain-positive, motile, straight to slightly curved rods forming terminal endospores. SY095T was grown at 45–60 °C (optimum 50–55 °C), pH 6.0–7.5 (optimum 7.0), and in a salinity of 1–4.5 % (w/v) NaCl (optimum 2.5 %). Substrates utilized by SY095T included fructose, glucose, maltose, N-acetyl glucosamine and tryptone. Casamino acid and amino acids (glutamate, glutamine, lysine, methionine, serine and histidine) were also utilized. The main end products from glucose fermentation were acetate, H2 and CO2. Elemental sulphur, sulphate, thiosulphate, sulphite, fumarate, nitrate, nitrite and Fe(III) were not used as terminal electron acceptors. The predominant cellular fatty acids were C14 : 0 (60.5%) and C16 : 0 (7.6 %). The main polar lipids consisted of diphosphatidylglycerol, phosphatidylglycerol, phosphatidylethanolamine, five unidentified phospholipids and two unidentified aminophospholipids. No respiratory quinones were detected. The chromosomal DNA G+C content was 30.8 mol%. The results of phylogenetic analysis of the 16S rRNA gene sequences indicated that SY095T was closely related to Crassaminicella profunda Ra1766HT (95.8 % 16S rRNA gene sequence identity). SY095T exhibited 78.1 % average nucleotide identity (ANI) to C. profunda Ra1766HT. The in silico DNA–DNA hybridization (DDH) value indicated that SY095T shared 22.7 % DNA relatedness with C. profunda Ra1766HT. On the basis of its phenotypic, genotypic and phylogenetic characteristics, SY095T is suggested to represent a novel species of the genus Crassaminicella , for which the name Crassaminicella thermophila sp. nov. is proposed. The type strain is SY095T (=JCM 34213=MCCC 1K04191). An emended description of the genus Crassaminicella is also proposed.

The discovery of new viruses is important for predicting their potential threats to the health of humans and other animals. A novel picornavirus was identified from oral, throat, and anal swab samples collected from belugas (Delphinapterus leucas), from Dalian Sun Asia Tourism Holding Co., China, between January and December 2018, using a metagenomics approach. The genome of this novel PicoV-HMU-1 strain was 8197 nucleotides (nt) in length, with a open reading frame (from 1091 to 8074 nt) that encoded a polyprotein precursor of 2328 amino acids. Moreover, the genomic length and GC content of PicoV-HMU-1 were within the ranges found in other picornaviruses, and the genome organization was also similar. Nevertheless, PicoV-HMU-1 had a lower amino acid identity and distinct host species compared with other members of the Picornaviridae family. Phylogenetic trees were constructed based on the P1 and 3D amino acid sequences of PicoV-HMU-1 along with representative members of the Picornaviridae family, which showed that PicoV-HMU-1 was related to unclassified bat picornaviruses groups. These findings suggest that the PicoV-HMU-1 strain represents a potentially novel genus of picornavirus. These data can enhance our understanding of the picornavirus genetic diversity and evolution.

International audience; Crassaminicella sp. 143-21, a putative new species isolated from deep-sea hydrothermal vent chimney on the Central Indian Ridge (CIR), is an anaerobic, thermophilic and rod-shaped bacterium belonging to the family Clostridiaceae. In this study, we present the complete genome sequence of strain 143-21, comprising 2,756,133 bp with a G + C content of 31.1%. In total, 2427 protein coding genes, 121 tRNA genes and 33 rRNA genes were obtained. Genomic analysis of strain 143-21 revealed that numerous genes related to organic matter transport and catabolism, including peptide transport, amino acid transport, saccharide transport, ethanolamine transport and corresponding metabolic pathways. Further, the genome contains a large proportion of genes involved in translation, ribosomal structure, and signal transduction. These genes might facilitate microbial survival in deep-sea hydrothermal vent environment. The genome of strain 143-21 will be helpful for further understanding its adaptive strategies in the deep-sea hydrothermal vent environment.

At high altitude, wastewater aeration efficiency is low, which is detrimental to nitrification in conventional biological nitrogen removal. The combined partial nitritation and anaerobic ammonium oxidation (CPNA) process requires little oxygen and can be appropriate in low-pressure conditions. As such, in this study, we investigated the effect of air pressure on CPNA using a laboratory-scale reactor. We found that low air pressure promoted the removal of total inorganic nitrogen (TIN), achieving a TIN removal rate of 43,000 mg·N/(kg·VSS·d). The secretion of extracellular polymeric substances under low air pressure was not significantly different from that under ordinary air pressure, indicating no adverse effects on microbial aggregation ability, stability, or settleability. The abundance of aerobic ammonia-oxidizing bacteria (AeAOB) increased from 0.2% to 5.6%, and the activity of anaerobic ammonia-oxidizing bacteria (AnAOB) enhanced, giving AeAOB and AnAOB a competitive advantage over nitrite-oxidizing bacteria, thus forming a microbial community structure favorable to the CPNA process. Our further analysis of the results of batch tests in serum bottles confirmed the positive effect of low air pressure on the anaerobic ammonium oxidation (anammox) process, with a 28.5% ± 1.9% improvement in the specific anammox rate at 70 kPa compared with 100 kPa. AnAOB activity increased, which was reflected in the intracellular heme content increasing from 0.56 ± 0.18 μmol/(g·VSS) at 100 kPa to 2.56 ± 0.20 μmol/(g·VSS) at 70 kPa. We clarified the CPNA-process-promoting effect of low air pressure, which shows potential for nitrogen removal in high-altitude regions.

A hyperthermophilic, strictly anaerobic archaeon, designated strain SY113T, was isolated from a deep-sea hydrothermal vent chimney on the Southwest Indian Ridge at a water depth of 2770 m. Enrichment and isolation of strain SY113T were performed at 85 °C at 0.1 MPa. Cells of strain SY113T were irregular motile cocci with peritrichous flagella and generally 0.8–2.4 µm in diameter. Growth was observed at temperatures between 50 and 90 °C (optimum at 85 °C) and under hydrostatic pressures of 0.1–60 MPa (optimum, 27 MPa). Cells of SY113T grew at pH 4.0–9.0 (optimum, pH 5.5) and a NaCl concentration of 0.5–5.5 % (w/v; optimum concentration, 3.0 % NaCl). Strain SY113T was an anaerobic chemoorganoheterotroph and grew on complex proteinaceous substrates such as yeast extract and tryptone, as well as on maltose and starch. Elemental sulphur stimulated growth, but not obligatory for its growth. The G+C content of the genomic DNA was 55.0 mol%. Phylogenetic analysis of the 16S rRNA sequence of strain SY113T showed that the novel isolate belonged to the genus Thermococcus . On the basis of physiological characteristics, average nucleotide identity values and in silico DNA–DNA hybridization results, we propose a novel species, named Thermococcus aciditolerans sp. nov. The type strain is SY113T (=MCCC 1K04190T=JCM 39083T).

Hadal trenches are the deepest but underexplored ecosystems on the Earth. Inhabiting the trench bottom is a group of micro-organisms termed obligate piezophiles that grow exclusively under high hydrostatic pressures (HHP). To reveal the genetic and physiological characteristics of their peculiar lifestyles and microbial adaptation to extreme high pressures, we sequenced the complete genome of the obligately piezophilic bacterium Moritella yayanosii DB21MT-5 isolated from the deepest oceanic sediment at the Challenger Deep, Mariana Trench. Through comparative analysis against pressure sensitive and deep-sea piezophilic Moritella strains, we identified over a hundred genes that present exclusively in hadal strain DB21MT-5. The hadal strain encodes fewer signal transduction proteins and secreted polysaccharases, but has more abundant metal ion transporters and the potential to utilize plant-derived saccharides. Instead of producing osmolyte betaine from choline as other Moritella strains, strain DB21MT-5 ferments on choline within a dedicated bacterial microcompartment organelle. Furthermore, the defence systems possessed by DB21MT-5 are distinct from other Moritella strains but resemble those in obligate piezophiles obtained from the same geographical setting. Collectively, the intensive comparative genomic analysis of an obligately piezophilic strain Moritella yayanosii DB21MT-5 demonstrates a depth-dependent distribution of energy metabolic pathways, compartmentalization of important metabolism and use of distinct defence systems, which likely contribute to microbial adaptation to the bottom of hadal trench.

The influenza A virus genome is comprised of eight single-stranded negative-sense viral RNA (vRNA) segments. Each of the eight vRNA segments contains segment-specific nonconserved noncoding regions (NCRs) of similar sequence and length in different influenza A virus strains. However, in the subtype-determinant segments, encoding hemagglutinin (HA) and neuraminidase (NA), the segment-specific noncoding regions are subtype specific, varying significantly in sequence and length at both the 3' and 5' termini among different subtypes. The significance of these subtype-specific noncoding regions (ssNCR) in the influenza virus replication cycle is not fully understood. In this study, we show that truncations of the 3'-end H1-subtype-specific noncoding region (H1-ssNCR) resulted in recombinant viruses with decreased HA vRNA replication and attenuated growth phenotype, although the vRNA replication was not affected in single-template RNP reconstitution assays. The attenuated viruses were unstable, and point mutations at nucleotide position 76 or 56 in the adjacent coding region of HA vRNA were found after serial passage. The mutations restored the HA vRNA replication and reversed the attenuated virus growth phenotype. We propose that the terminal noncoding and adjacent coding regions act synergistically to ensure optimal levels of HA vRNA replication in a multisegment environment. These results provide novel insights into the role of the 3'-end nonconserved noncoding regions and adjacent coding regions on template preference in multiple-segmented negative-strand RNA viruses. IMPORTANCE While most influenza A virus vRNA segments contain segment-specific nonconserved noncoding regions of similar length and sequence, these regions vary considerably both in length and sequence in the segments encoding HA and NA, the two major antigenic determinants of influenza A viruses. In this study, we investigated the function of the 3'-end H1-ssNCR and observed a synergistic effect between the 3'-end H1-ssNCR nucleotides and adjacent coding nucleotide(s) of the HA segment on template preference in a multisegment environment. The results unravel an additional level of complexity in the regulation of RNA replication in multiple-segmented negative-strand RNA viruses.

Colorectal cancer (CRC) is one of the most common cancer in the world. The first line chemotherapeutic agent, 5-fluorouracil (5-FU), plays a predominant role in the clinical treatment of CRC. However, with the wide use of 5-FU, more and more CRC patients have been obtaining drug resistance to 5-FU, which leads to a large amount of treatment failures. One of the effective strategies to overcome this obstacle is to find bioactive natural products from traditional medicine. In our previous work, Sanguisorba officinalis L. was found to exert a strong anti-proliferative activity against 5-FU-senstive/resistant CRC cells. Therefore, several compounds were isolated from this herb and screened for their anti-CRC effects to find promising compounds. Among them, a triterpenoid compound named 3β-[(α-l-arabinopyranosyl) oxy]-urs-12,18(19)-dien-28-oic acid β-d-glucopyranosyl ester (AGE), showed strong activity against both 5-FU-senstive and resistant CRC cells. In order to further study the mechanism of AGE on CRC cells, flow cytometer analysis, mitochondrial membrane potential (MMP) measurement, Western blotting, and RT-PCR assays were performed. Results demonstrated that AGE induced cell death by apoptosis pathway and autophagy, and inhibited cell proliferation via cell cycle arrest in G0-G1 phase mediated by Wnt signaling pathway. Therefore, AGE may be a potential bioactive compound for CRC treatment in clinic.

Conventional insulated gate bipolar transistor (IGBT) current sensing and protection techniques usually employ discrete sensors, such as lossy shunt resistors, and may involve accessing the high-voltage collector load of the IGBT. This would normally present difficulties for integration. This paper presents an IGBT gate driver IC with a collector current sensing circuit and an on-chip CPU for local data processing. This IC is prototyped using a TSMC 0.18 μm 40 V BCD Gen-2 process. The collector current sensing technique is based on the unique Miller plateau relationship between the gate current and collector current ( $I_{C}$ and $I_{G}$ ) for a particular gate resistance ( $R_{G}$ ). It allows a cycle-by-cycle measurement of IC during both turn- on and turn- off transients without any extra discrete components. The temperature variation is compensated internally by the on-chip CPU using polynomial curve fitting. This technique only monitors the low-voltage signal at the gate terminal, without the need to handle any high-voltage signal on the collector/load side. Measurements using a double pulse test setup show an accuracy of ±0.5 A over the current ranges of 1–30 A for turn- on and 1–50 A for turn- off from 25 to 75 °C.

Background The Mariana Trench is the deepest known site in the Earth’s oceans, reaching a depth of ~ 11,000 m at the Challenger Deep. Recent studies reveal that hadal waters harbor distinctive microbial planktonic communities. However, the genetic potential of microbial communities within the hadal zone is poorly understood. Results Here, implementing both culture-dependent and culture-independent methods, we perform extensive analysis of microbial populations and their genetic potential at different depths in the Mariana Trench. Unexpectedly, we observed an abrupt increase in the abundance of hydrocarbon-degrading bacteria at depths > 10,400 m in the Challenger Deep. Indeed, the proportion of hydrocarbon-degrading bacteria at > 10,400 m is the highest observed in any natural environment on Earth. These bacteria were mainly Oleibacter, Thalassolituus, and Alcanivorax genera, all of which include species known to consume aliphatic hydrocarbons. This community shift towards hydrocarbon degraders was accompanied by increased abundance and transcription of genes involved in alkane degradation. Correspondingly, three Alcanivorax species that were isolated from 10,400 m water supplemented with hexadecane were able to efficiently degrade n-alkanes under conditions simulating the deep sea, as did a reference Oleibacter strain cultured at atmospheric pressure. Abundant n-alkanes were observed in sinking particles at 2000, 4000, and 6000 m (averaged 23.5 μg/gdw) and hadal surface sediments at depths of 10,908, 10,909, and 10,911 m (averaged 2.3 μg/gdw). The δ2H values of n-C16/18 alkanes that dominated surface sediments at near 11,000-m depths ranged from − 79 to − 93‰, suggesting that these sedimentary alkanes may have been derived from an unknown heterotrophic source. Conclusions These results reveal that hydrocarbon-degrading microorganisms are present in great abundance in the deepest seawater on Earth and shed a new light on potential biological processes in this extreme environment. Electronic supplementary material The online version of this article (10.1186/s40168-019-0652-3) contains supplementary material, which is available to authorized users.

A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid ${p} ^{+}/{n}$ collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop ( ${V} _{\mathrm{ on}}$ ) and the turn-off energy loss ( ${E} _{\mathrm{ off}}$ ). The proposed hybrid collector structure consists of a ${p} ^{+}/{n}$ layer between the ${p} ^{+}$ collector and the field stop layer. During turn-on, the ${p} ^{+}$ regions in the hybrid ${p} ^{+}/{n}$ layer provide high carrier injection efficiency. During turn-off transient, the ${n}$ -regions in the hybrid ${p} ^{+}/{n}$ collector provide fast carrier extraction paths for holes. 2-D numerical simulations comparing a conventional TFS-IGBT, an injection efficiency controlled IGBT with the proposed hybrid ${p} ^{+}/{n}$ collector TFS-IGBT (HC-IGBT) having similar device structures show that for a 1.2 kV rating and with ${V} _{\mathrm{ on}}$ at 1.5 V, the HC-IGBT has an advantage in ${E} _{\mathrm{ off}}$ reduction by 69% and 22%, respectively. Finally, backside mask alignment is not needed for fabricating the proposed hybrid ${p} ^{+}/{n}$ collector structure.

The application of a segmented gate driver (SGD) to detect aging and provide automated compensation for SiC MOSFETs is presented. By dynamically modifying the gate resistance during switching transients, we can stretch the Miller plateau (MP) duration. The MP level is used as an indicator for the health condition of the SiC power MOSFET. A digital control circuit analyzes the aging effect and provides a control signal to an integrated boost converter, which powers the gate drive voltage. In this manner, the gate drive voltage can be adjusted to compensate for changes in the MOSFET performance. The same SGD can also be used to suppress gate ringing to protect the SiC power device against over/undershoot damage. This is of particular importance at elevated gate voltage.

Compact liquid cooled gallium nitride (GaN) intelligent power modules (IPMs) are fabricated using direct bonding methods. A half bridge module with 15 A GaN high electron mobility transistors (HEMTs) is flip-chip bonded on active metal brazed (AMB) substrates using pressureless nanosilver sintering. The AMB substrates are pre-brazed on a copper liquid cooler. The geometries of the AMB substrates and the GaN IPMs are determined based on thermal simulations using finite element analysis (FEA). The prototype GaN IPMs are tested in a buck converter configuration. The module temperatures are below 35 °C for up to 35 W of output power. The proposed process flow offers a simple IPM packaging solution to power semiconductor companies using prefabricated liquid coolers with brazed AMB substrates from automotive parts manufacturers.