Back to Search
Start Over
A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression
- Source :
- 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- The application of a segmented gate driver (SGD) to detect aging and provide automated compensation for SiC MOSFETs is presented. By dynamically modifying the gate resistance during switching transients, we can stretch the Miller plateau (MP) duration. The MP level is used as an indicator for the health condition of the SiC power MOSFET. A digital control circuit analyzes the aging effect and provides a control signal to an integrated boost converter, which powers the gate drive voltage. In this manner, the gate drive voltage can be adjusted to compensate for changes in the MOSFET performance. The same SGD can also be used to suppress gate ringing to protect the SiC power device against over/undershoot damage. This is of particular importance at elevated gate voltage.
- Subjects :
- 010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
Electrical engineering
02 engineering and technology
01 natural sciences
Compensation (engineering)
Logic gate
0103 physical sciences
Boost converter
MOSFET
0202 electrical engineering, electronic engineering, information engineering
Gate driver
Digital control
Power MOSFET
business
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Accession number :
- edsair.doi...........329b61fd06a4b6e0c03985b8e77a5759
- Full Text :
- https://doi.org/10.23919/ispsd50666.2021.9452261