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A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

Authors :
Mengqi Wang
Wei Jia Zhang
Hitoshi Sumida
Wen Tao Cui
Wai Tung Ng
Hiroyuki Nakajima
H. Nishio
Jingyuan Liang
Source :
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Publication Year :
2021
Publisher :
IEEE, 2021.

Abstract

The application of a segmented gate driver (SGD) to detect aging and provide automated compensation for SiC MOSFETs is presented. By dynamically modifying the gate resistance during switching transients, we can stretch the Miller plateau (MP) duration. The MP level is used as an indicator for the health condition of the SiC power MOSFET. A digital control circuit analyzes the aging effect and provides a control signal to an integrated boost converter, which powers the gate drive voltage. In this manner, the gate drive voltage can be adjusted to compensate for changes in the MOSFET performance. The same SGD can also be used to suppress gate ringing to protect the SiC power device against over/undershoot damage. This is of particular importance at elevated gate voltage.

Details

Database :
OpenAIRE
Journal :
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Accession number :
edsair.doi...........329b61fd06a4b6e0c03985b8e77a5759
Full Text :
https://doi.org/10.23919/ispsd50666.2021.9452261