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The neurocognitive health effects of repetitive head impacts have been examined in many sports. However, characterizations of head impacts for sliding-sport athletes are lacking. To describe head impact kinematics and injury epidemiology in elite athletes during the 2021–2022 Bobsleigh World Cup season. Cross-sectional study. On-track training and competitions during the Bobsleigh World Cup season. Twelve elite bobsleigh athletes (3 pilots [1 female], 9 push athletes [5 females]; age = 30 ± 5 years; female height and weight = 173 ± 8 cm and 75 ± 5 kg, respectively; male height and weight = 183 ± 5 cm and 101 ± 5 kg, respectively). Athletes wore an accelerometer-enabled mouthguard to quantify 6-degrees-of-freedom head impact kinematics. Isometric absolute and relative neck strength, number of head acceleration events (HAEs), workload (J), peak linear velocity (m·s−1), peak angular velocity (rad·s−1), peak linear acceleration (g), and peak angular acceleration (rad·s−2) were derived from mouthguard manufacturer algorithms. Linear mixed-effect models tested the effects of sex (male versus female), setting (training versus competition), and position (pilot versus push athlete) on the kinematic variables. A total of 1900 HAEs were recorded over 48 training and 53 competition days. No differences were found between the number of HAEs per run per athlete by sex (incidence rate ratio [IRR] = 0.82, P =.741), setting (IRR = 0.94, P =.325), or position (IRR = 1.64, P =.463). No sex differences were observed for workload (mean ± SD: males = 3.3 ± 2.2 J, females = 3.1 ± 1.9 J; P =.646), peak linear velocity (males = 1.1 ± 0.3 m·s−1, females = 1.1 ± 0.3 m·s−1; P =.706), peak angular velocity (males = 4.2 ± 2.1 rad·s−1, females = 4.7 ± 2.5 rad·s−1; P =.220), peak linear acceleration (male = 12.4 ± 3.9g, females = 11.9 ± 3.5g; P =.772), or peak angular acceleration (males = 610 ± 353 rad·s−2, females = 680 ± 423 rad·s−2; P =.547). Also, no effects of setting or position on any kinematic variables were seen. Male athletes had greater peak neck strength than female athletes for all neck movements, aside from right-side flexion (P =.085), but no sex differences were noted in relative neck strength. We provide a foundational understanding of the repetitive HAEs that occur in bobsleigh athletes. Future authors should determine the effects of repetitive head impacts on neurocognitive function and mental health. [ABSTRACT FROM AUTHOR]

Several cardiovascular disease (CVD) risk factors (e.g., hypertension, poor glycemic control) can affect and be affected by autonomic nervous system (ANS) activity. Since excess adiposity can influence CVD development through its effect on hypertension and diabetes mellitus, it is important to determine how adiposity and altered ANS activity are related. The present study employed structural equation modeling to investigate the relation between adiposity and ANS activity both directly and indirectly through biological variables typically associated with glycemic impairment and cardiac stress in older adults. Utilizing the Atherosclerosis Risk in Communities (ARIC) dataset, 1,145 non-smoking adults (74±4.8 yrs, 62.8% female) free from known CVD, hypertension, and diabetes and not currently taking beta-blockers were evaluated for fasting blood glucose (FBG), insulin, and HbA1c concentrations, waist circumference (WC), blood pressure (BP), and markers of ANS activity. WC was recorded just above the iliac crest and was used to reflect central adiposity. Resting 2-minute electrocardiograph recordings, pulse wave velocity, and ankle-brachial index data were used to assess the root mean square of successive differences in RR intervals (RMSSD) and the pre-ejection period (PEP), markers of parasympathetic and sympathetic activity, respectively. FBG, insulin, and HbA1c inferred a latent variable termed glycemic impairment (GI), whereas heart rate and diastolic BP inferred a latent variable termed cardiac stress (CS). The structural equation model fit was acceptable [root mean square error of approximation = 0.050 (90% CI =.036,.066), comparative fit index =.970, Tucker Lewis Index = 0.929], with adiposity having both significant direct (β = 0.208, p = 0.018) and indirect (β = -.217, p =.041) effects on PEP through GI. Adiposity displayed no significant direct effect on RMSSD. CS displayed a significant pathway (β = -0.524, p = 0.035) on RMSSD, but the indirect effect of WC on RMSSD through CS did not reach statistical significance (β = -0.094, p = 0.137). These results suggest that adiposity's relation to ANS activity is multifaceted, as increased central adiposity had opposing direct and indirect effects on markers of sympathetic activity in this population of older adults. [ABSTRACT FROM AUTHOR]

Protein modification by ubiquitin fold modifier 1 (UFM1), termed ufmylation, regulates various physiological and pathological processes. Among emerging UFM1 targets, UFM1 binding protein 1 (UFBP1) is the first identified ufmylation substrate. Recent clinical and animal studies have demonstrated the pivotal roles of UFBP1 in development, hematopoiesis, intestinal homeostasis, chondrogenesis, and neuronal development, which has been linked to its function in maintaining endoplasmic reticulum (ER) homeostasis. However, the importance of UFBP1 ufmylation in these cellular and physiological processes has yet to be determined. It has been proposed that ufmylation of lysine 268 (267 in humans) in UFBP1 plays a critical role in mediating the effects of the ufmylation pathway. In this study, we for the first time probe the pathophysiological significance of UFBP1 ufmylation in vivo by creating and characterizing a mouse UFBP1 knockin (KI) model in which the lysine 268 of UFBP1, the amino acid accepting UFM1, was mutated to arginine. Our results showed that the K268R mutation reduced the total ufmylated proteins without altering the expression levels of individual ufmylation enzymes in mouse embryonic fibroblasts. The K268R mutation did not alter ER stress–stimuli–induced ER stress signaling or cell death in mouse embryonic fibroblasts. The homozygous KI mice were viable and morphologically indistinguishable from their littermate wild–type controls up to one year of age. Serial echocardiography revealed no cardiac functional impairment of the homozygous KI mice. Furthermore, the homozygous KI mice exhibited the same susceptibility to dextran sulfate sodium (DSS) –induced colitis as wild-type mice. Taken together, these results suggest that UFBP1 K268 is dispensable for ER stress response, embryonic development, cardiac homeostasis under physiological conditions, and intestinal homeostasis under pathological conditions. Our studies call for future investigations to understand the biological function of UFBP1 ufmylation and offer a new mouse model to determine the roles of UFBP1 ufmylation in different tissues under stress conditions. [ABSTRACT FROM AUTHOR]

The effects of acute exercise on the cortisol awakening response (CAR), characterized by the rapid increase in cortisol concentrations within the 30–45 min following sleep offset has yet to be fully elucidated. Thus, our study investigated the effects of late-evening acute exercise on the CAR the following morning. We hypothesized that exercise would have a significant effect on the CAR the following morning. Twelve participants (mean (SD): age = 23 (4) years; mass = 76.8 (8.7) kg; height = 175.6 (5.0) cm; V ˙ O2max = 48.9 (7.5) ml.kg−1.min−1) reported to the laboratory in the evening (1800 h) on two occasions and were randomly assigned to either exercise for one hour (70–75% of maximal power output) or rest condition. Blood and saliva samples were assayed for cortisol. Mixed-effects models determined the effect of exercise on the cortisol response post-waking in both blood and saliva. Participants demonstrated an average exercise-induced increase in circulating cortisol of 477.3%, with actual mean (SD) heart rate relative to maximum of 87.04% (6.14%). Model results demonstrated a negative effect for exercise condition when modeling the serum and salivary cortisol responses to awakening via a quadratic growth model (serum, βCondition = − 42.26 [95% CI − 64.52 to − 20.01], p < 0.001; saliva, βCondition = − 11.55 [95% CI − 15.52 to − 7.57], p < 0.001). These results suggest that cortisol concentrations in saliva and blood are significantly lower the morning following a prior evening exercise session. Therefore, the CAR may serve as a useful biomarker to monitor responses to exercise training, although the underlying mechanism for these decreases in the CAR should be investigated further. [ABSTRACT FROM AUTHOR]

Semi-insulating GaN films with controlled dopant profiles have significant potential to improve the performance of high-power electronics. Beryllium doped GaN (GaN:Be) films previously demonstrated a semi-insulating nature, but the Be-dopant profiles in these films exhibited Be surface segregation and accumulation, which would lead to undesired leakage current paths in devices and deterioration of breakdown voltage. Improved growth kinetics of metal modulated epitaxy at low growth temperatures are applied in the study of GaN:Be films to achieve selectively controlled and abrupt step-doped Be profiles. The GaN:Be films were found to be semi-insulating via Hall effect measurements at elevated temperatures of 495 K. The films were shown to effectively electrically compensate surface contaminants at regrowth interfaces. Surface contaminants (O, Si, and C) typically result in unintentional n-type doping at the GaN on GaN regrowth interface. In order to demonstrate the utility of Be doping, GaN:Mg p-type films are grown atop GaN:Be buffer, AlN buffer, and control samples without any insulating buffer on GaN:Fe templates. Remarkably, the p-type films grown atop control samples up to 400 nm thick are compensated from surface contaminants, whereas the films grown atop AlN and GaN:Be insulating layers effectively electrically neutralize the surface contaminants and result in high hole concentrations of 2.3 and 2.5 × 1019 cm−3, respectively. The use of GaN:Be instead of AlN buffers eliminates the need to deconvolve the effects of the AlN/GaN 2D sheet charges and defects from lattice mismatch, removes lateral conduction paths, and reduces inherently high static vertical electric fields that detract from power device performance. [ABSTRACT FROM AUTHOR]

Coppus, TA, Anderson, T, Hurley, E, Gill, DL, and Brown, PK. The practical utility of objective training load indices in Division I college soccer players. J Strength Cond Res 36(4): 1026-1030, 2022-The aim of this study was to investigate the association of subjective session rating of perceived exertion with objective training load measures and explored data reduction approaches for 26 commonly measured objective load metrics. One National Collegiate Athletic Association Division I male soccer team (N = 28) provided 26 objective measures via a global positioning system and heart rate monitor system and self-report rating of perceived exertion measures for all team activities through the 12-week 2019 fall championship season. The singular associations between session rating of perceived exertion (sRPE) and objective load metrics were assessed via repeated-measures correlation and collectively assessed via elastic net regression. Principal components analysis was then used to reduce the dimensionality of objective load variables. Level of significance for the study was [alpha] <= 0.05. The training load variable had the highest correlation with sRPE (r = 0.85) among the 26 metrics. Twenty variables were retained in the elastic-net regression and demonstrated an R 2 of 0.76. The principal components analysis demonstrated a 4-component solution. The components were qualitatively described as "moderate- or high-intensity external load," "low-intensity load," "high-intensity internal load," and "average internal load" and accounted for 46, 32, 16, and 6% of the variance, respectively. The sRPE metric had strong correlations with multiple objective measures, demonstrating its utility for practitioners monitoring training load in collegiate soccer with limited resources. Furthermore, the consolidation of 26 metrics into 4 components while retaining data variability allows coaches to focus on a small number of metrics and employ a data-driven approach to training. /p> [ABSTRACT FROM AUTHOR]

• Deep-ultraviolet (DUV) laser source for laboratory-based photoemission microscopy. • Intense, narrowband, and tunable output from 192 nm to 210 nm (6.5 eV to 5.9 eV). • Characterize space charge effects at 80 MHz repetition rate in PEEM measurements. • High DUV flux allows high resolution studies of wide bandgap semiconductors. Photoemission electron microscopy (PEEM) is a unique and powerful tool for studying the electronic properties of materials and surfaces. However, it requires intense and well-controlled light sources with photon energies ranging from the UV to soft X-rays for achieving high spatial resolution and image contrast. Traditionally, many PEEMs were installed at synchrotron light sources to access intense and tunable soft X-rays. More recently, the maturation of solid-state lasers has opened a new avenue for laboratory-based PEEMs using laser-based UV light at lower photon energies. Here, we report on the characteristics of a laser-based UV light source that was recently integrated with a PEEM instrument. The system consists of a high repetition rate, tunable wavelength laser coupled to a harmonics generation module, which generates deep-UV radiation from 192 nm to 210 nm. We comment on the spectral characteristics and overall laser system stability, as well as on the effects of space charge within the PEEM microscope at high UV laser fluxes. Further, we show an example of imaging on gallium nitride, where the higher UV photon energy and flux of the laser provides considerably improved image quality, compared to a conventional light source. These results demonstrate the capabilities of laser-based UV light sources for advancing laboratory-based PEEMs. [ABSTRACT FROM AUTHOR]

Two American collegiate football linemen completed physical activity surveys, anthropometric assessments, dietary recalls, and blood draws across a 20-month period during which Player A continued training professionally in football while Player B transitioned out of the sport after his final collegiate season. Few changes were observed for Player A, whereas notable changes in physical activity, body mass, and endocrine factors associated with metabolic regulation were noted in Player B. Considerable alterations in physical activity and biomarkers occurred in the immediate transition out of competitive football, suggesting the possibility of long-term health consequences in the absence of future positive lifestyle behavioral changes. Alternatively, the adoption or maintenance of health behaviors could reverse risks. With a greater emphasis on lifespan wellness, this level 2 exploratory case series illustrates a key opportunity for athletic trainers to monitor athletes' cardiometabolic risks over an extended period and implement transitional care strategies to promote postcompetitive health. [ABSTRACT FROM AUTHOR]

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. In this work, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically. [ABSTRACT FROM AUTHOR]

Context: Although fatigue has been implicated in anterior cruciate ligament (ACL) injury, few researchers have examined the timing of injury across a competitive sport season or within a competitive session to gain insight into the potential effects of fatigue on the incidence of ACL injury. Objective: To identify the time segments across a competitive season or within an individual competition associated with the greatest ACL injury incidence. Design: Descriptive epidemiology study. Methods: Data from the National Collegiate Athletic Association Injury Surveillance Program for 2004-2005 through 2015-2016 for basketball, lacrosse, and soccer were analyzed. Incidence rate ratios (IRRs) compared ACL injury rates by sport, sex, season segment, and competition period. Poisson regression was used to examine the associations between each of these categories and the incidence of ACL injury as well as interaction effects. Results: During the early regular season, the incidence rate was elevated relative to the preseason (IRR = 1.86; 95% confidence interval [CI] = 1.27, 2.74), middle regular season (IRR = 1.48; 95% CI = 1.01, 2.15), late regular season (IRR = 1.56; 95% CI=1.08, 2.27), and postseason (IRR=2.20; 95% CI = 1.06, 4.56). A sport-by-season interaction indicated this effect was largely attributable to a higher incidence in the early season among lacrosse athletes. An interaction between season segment and competition period (P = .02) revealed a greater injury incidence before halftime in the early regular season (IRR = 0.38, 95% CI = 0.19, 0.76), but a greater incidence after halftime in the late regular season (IRR = 2.40, 95% CI = 1.15, 5.02). Fewer noncontact injuries occurred in soccer than in basketball or lacrosse. Conclusions: The ACL injury incidence was higher in the early part of the regular season, particularly among lacrosse athletes. Although the injury incidences before and after halftime were similar, further analyses of player time and time of injury within each half are necessary. Coaches and practitioners should be cognizant of the elevated injury incidence during the early season among lacrosse athletes. Future authors should consider more specific analyses to further elucidate the potential role of fatigue development in exacerbating the incidence of ACL injury in collegiate athletes both within games and across the season. [ABSTRACT FROM AUTHOR]

The cortisol awakening response (CAR) is often assessed in the saliva and considered to be representative of serum cortisol. However, free cortisol is rapidly converted into cortisone as it passes from the serum into the saliva. Because of this enzymatic conversion, the salivary cortisone awakening response (EAR) may be more closely related to serum cortisol dynamics than the salivary CAR. Therefore, the purpose of this study was to measure the EAR and CAR in saliva and compare it to the serum CAR. Male participants (n = 12) had an intravenous catheter placed for serial serum sampling and completed two overnight laboratory sessions, wherein participants slept in the laboratory and saliva and serum samples were collected every 15 min after volitional awakening the following morning. Serum was assayed for total cortisol and saliva for cortisol and cortisone. The CAR and EAR was assessed in saliva and the CAR in serum via mixed-effects growth models and common awakening response indices (area under the curve [AUC] relative to the ground [AUC G ] and relative to the increase [AUC I ], and change scores [Δ]). There was a distinct rise in salivary cortisone following awakening demonstrating the presence of a discernable EAR (β Quadratic = −41.18, [95%CI = −68.90 to −13.46], p < 0.004, Conditional R2 = 0.641). Two EAR indices (AUC G : p < 0.001 and AUC I : p = 0.030) were associated with the corresponding serum CAR indices. We demonstrate for the first time a distinct cortisone awakening response. The results suggest the EAR may be more closely related to serum cortisol dynamics during the post-awakening period, and thus, may be a biomarker of interest in addition to the CAR for assessing hypothalamic-pituitary-adrenal axis functioning. • This is one of the first studies to explicity test for and demonstrate the presence of a cortisone awakening response. • The cortisone awakening response is associated with blood-based cortisol awakening response. • Researchers should consider cortisone as an alternative hormone for assessing salivary awakening responses. [ABSTRACT FROM AUTHOR]

The activation of ion implanted p-type dopants in GaN is notoriously difficult as the extremely high temperatures required to activate implanted Mg also damage the GaN crystal. In this paper, we present refinements to our novel annealing process (symmetric multicycle rapid thermal annealing) to reduce surface damage and contamination responsible for elevated leakage currents and non-ideal diode behavior. Furthermore, we apply the technique to Mg-implanted bulk GaN substrates to enable vertical power device structures, demonstrating rectifying p-i-n junctions. In addition, the technique was applied for edge termination in both p-i-n and Schottky barrier diodes, realizing floating guard ring and junction termination extension structures. The processes demonstrated here represents a key enabling step for future GaN-based power devices. [ABSTRACT FROM AUTHOR]

Purpose: Cortisol (C) and testosterone (T) are impacted significantly by prolonged endurance exercise with inverse responses. Increases in C are witnessed concurrently with decrements in T, possibly impacting recovery. This study was conducted to assess the dynamics of C and free T (fT) concentration and recovery time following an exhaustive endurance exercise session (EES).Methods: 12 endurance-trained males (X ± SD: VO2max 66.3±4.8 ml/kg/min, age 22.8 ± 3.1 years, body fat 11.0 ± 1.4 %, training 7.1 ± 3.2 years) completed a treadmill EES at ventilatory threshold (74.7 ± 4.6 % of VO2max; 96.9 ± 10.8 min). Basal blood C and fT were collected at baseline: -48, -24 h, and immediately before (0 h) the EES as well as immediately (+0 h), +24 h, +48 h, and +72 h after the EES. Blood glucose (G) was measured to confirm no undue influence on C. Statistically data were analyzed with repeated measures ANOVA (LSD post hoc).Results: C (nmol/L) increased significantly from -48 h (321 ± 59) to +0 h (701 ± 178) (p < 0.001), and displayed a baseline overshoot with +24 h (209 ± 67) being significantly lower than -48 and +0 h (p < 0.03). fT (pmol/L) decreased significantly from -48 h (161 ± 40) to +0 h (106 ± 38) (p < 0.01) and remained lower at +24 h (110 ± 33) and +48 h (129 ± 30) (p < 0.001). G remained stable throughout. A moderately negative correlation (r = -0.636, p < 0.026) was found between C and fT at +0 h.Conclusions: EES recovery may require 48 h for C and 72 h for fT to return to baseline values. Furthermore, C and fT were only correlated immediately post-exercise. Future research should perform more frequent measurements throughout time course. [ABSTRACT FROM AUTHOR]

Top-side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable oxygen plasma etching of the diamond capping layer, required for a diamond-before-gate process, was implemented by using a sacrificial SiN 'dummy' gate. Hall characterization showed minimal (∼6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Off-state drain current and threshold voltage were increased, likely by fluorination of the AlGaN surface after removal of the sacrificial gate, even though a 20 nm thick Al2O3 layer was used as a SF6-plasma etch stop. Pulsed IDS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film. [ABSTRACT FROM AUTHOR]

An Mg-implanted p-i-n diode was fabricated and characterized. Mg activation was achieved using the multicycle rapid thermal annealing technique with rapid heating pulses up to 1340 °C. The surface of the implanted GaN after annealing was smooth (0.94 nm RMS roughness) with growth steps evident as characterized by atomic force microscopy. The full width at half-maximum of the implanted GaN E2 Raman mode approaches that of the as-grown GaN after the annealing process, indicating that the annealing process is able to reverse most of the implantation damage. The Mg-implanted p-i-n diode exhibits rectification and a low leakage current of 0.11 μA cm−2 at a bias of −10 V. Under forward bias, light emission was observed from the p-i-n diode. The implantation and activation of Mg in a GaN-based device, demonstrated for the first time in this research, is a key enabling step for future optoelectronic and power electronic devices. Current-voltage characteristics of the Mg-implanted p-i-n diode with an inset of the device schematic. [ABSTRACT FROM AUTHOR]

A dry process for selective etching of nanocrystalline diamond thin films has been developed as an alternative to plasma etching. This process relies on subjecting masked diamond films to a controlled oxygen atmosphere at temperatures of 700–800 °C to controllably etch both vertically through the film and laterally underneath the mask. SiO 2 , SiN x , and Al 2 O 3 films constitute viable mask materials for this process, provided that the underlying diamond film is fully outgassed before mask deposition and diamond etching. As expected, etching occurred more rapidly at higher temperatures. The etch rate was higher in the lateral direction than the vertical direction, which has been attributed to accelerated etching along disordered grain boundaries and the underlying nucleation layer. Similar activation energies (136–140 kJ/mol) were obtained for both lateral and vertical etching from 700 to 800 °C. Using the dry etch process developed in this research, diamond films can be removed from exposed features and undercut masked regions at a controlled rate, as indicated by microscopy and Raman spectroscopy. [ABSTRACT FROM AUTHOR]

Background: The ability to monitor changes in daily hydration status is critical for human health and performance. Monitoring changes in body weight (W), urine color (U), and thirst (T) was proposed as a simple, low-cost method for daily hydration monitoring [1]. However, the ability of these metrics to accurately predict 24-h hydration status is yet to be fully tested. Objective: The purpose of this study was to assess the degree to which daily monitoring of W, U, and T (i.e., the WUT model) could accurately predict 24-h hydration status. Methods: Thirty-five male and female adults (age: 23.4 ± 4.1 years, height: 173.0 ± 10.3 cm, mass: 77.2 ± 18.2 kg, body fat: 18.4 ± 8.4%) were monitored for 8 consecutive days. Assessments on each morning included a 24-h urine sample for urine osmolality (UOSM24), a first void spot urine for urine color (U), nude body weight (W), and perceived thirst (T) using a 1–9 Likert scale. On days 7 and 8, a blood sample was taken for copeptin assessment [2]. If UOSM24 was >800 mOsm•kg−1 on any day, the participants were classified as hypohydrated. Multiple research questions were explored. First, models tested the degree to which W, U, and T could predict UOSM24 (RQ1). Classification models assessed the ability to predict whether an individual was hypohydrated (UOSM24 >800 mOsm•kg−1; RQ2). Last, models tested the degree to which W, U, and T could predict concentrations of copeptin (RQ3). For each question, 4 separate modeling approaches were used: linear regression (LR), elastic net regression (EN), extreme gradient boosted random forests (XB), and a single hidden layer neural network (NN). Eighty percent of the data (RQ1/RQ2 n = 207, RQ3 n = 49) were used to train the models, while 20% of the data were held out (RQ1/RQ2 n = 51, RQ3 n = 10) for model validation. Within the training data, bootstrap samples (XB) and cross-fold validation (EN and NN) samples were used to optimize model hyperparameters. Prediction accuracy for regression analyses were assessed via R2 and root mean square error (RMSE), and for classification analyses via area under the curve of the receiver operating characteristic. Results: The results demonstrated that the NN model performed best when predicting UOSM24 (R2 = 0.532, RMSE = 228 mOsm•kg−1), but all models had relatively poor fit and large errors during validation. All classification models were moderately effective at discriminating between the binary hydration status of individuals (area under the curve of the receiver operating characteristic range: 0.661–0.696). Linear regression (Fig. 1; R2 = 0.929, RMSE = 1.49 pmol•L−1), XB (R2 = 0.834, RMSE = 3.11 pmol•L−1), EN (R2 = 0.890, RMSE = 2.13 pmol•L−1), and NN (R2 = 0.930, RMSE = 1.84 pmol•L−1) were able to predict copeptin concentrations with relatively low error. Conclusions: The WUT model accurately predicts copeptin concentrations on out of training data observations, suggesting that first morning measures of W, U, and T are effective for tracking hydration status by indirectly monitoring arginine vasopressin. More research is needed to determine potential cut-scores of predicted copeptin levels to aid practitioner decisions. [ABSTRACT FROM AUTHOR]

Current controversies manifest an inherent tension between artistic freedom and moral constraint--a tension exacerbated by our reluctance or inability to define modem art. This paper maintains that Kant and Hegel are two of the pivotal figures with which any reflections on the ground, nature, and limits of artistic freedom must begin. Both philosophers, for example, explicitly argue that artist and audience alike require a certain kind and a certain degree of freedom in order to carry out their respective projects, be they creative, cognitive, or aesthetic. While Kant's interest in art is limited mostly to its aesthetic affects, i.e., the faculty-driven feelings associated with beauty and the sublime, Hegel rejects feelings of any kind as constituting a proper subjectmatter for philosophy, and so reaffirms the classical conception of art as essentially an expression of truth. Despite these fundamental differences, the two philosophers' respective explanations of art and artistic autonomy must both be considered if we are to understand properly modem and post-historical forms of art, which for all their novelty and differences (both real and apparent) draw heavily on both the Kantian and Hegelian traditions for their justification. So, while Kant and Hegel may not supply us with direct or decisive ways to think through contemporary issues involving artistic freedom or questions concerning the moral legitimacy of art, they can help us map out the historical landscape of philosophical thought on art and artistic autonomy and thereby provide us with the prolegomena to such an effort. [ABSTRACT FROM AUTHOR]

The free testosterone to cortisol ratio (fTC) and heart rate variability (HRV) indices have been independently proposed as objective biomarkers of physiological resilience and readiness, respectively. It is hypothesized that individuals that enter a training period with high resilience and readiness would have a greater positive response to the training. PURPOSE: Therefore, the purpose of this study was to investigate the association between fTC and HRV with fitness changes in division I male college soccer players. METHODS: Two division I teams were recruited to participate in this study. Participants completed an orthostatic HRV challenge (supine, sitting, standing) and provided blood samples prior to the 6-week Spring training period. The HRV indices of root mean square of successive differences (RMSSD) and high frequency power (autoregressive, normalized; HF) were calculated in all postural conditions. Blood samples were assayed for free testosterone and cortisol using competitive binding ELISAs. Participants completed the yo-yo intermittent recovery test (YYIR) before and after the 6-week training period and the absolute increase in distance (m) achieved during the YYIR represented the change in fitness (YYIRΔ). Separate linear regression models tested the association of fTC and all HRV indices and their interactions with YYIRΔ. All predictors were first centered and scaled and alpha level was set at p < 0.05 for all models. RESULTS: Participants (n = 21, age = 19.5±1.0 years, height = 179.0±6.4 cm, weight = 76.9±9.4 kg, body fat = 12.6±4.3 %) from the two teams did not differ in YYIRΔ (mean±SD = 438±212, p = 0.64). A significant association with YYIRΔ was observed for the interaction between fTC and HFsitting (F(3,17) = 4.31, β = 4.92,p = 0.02, R² = 0.33). No other indices or interactions were significantly associated with YYIRΔ. CONCLUSIONS: These results suggest that HRV and fTC represent potential objective pre-training biomarkers capable of identifying athletes that will be most responsive to individualized fitness and conditioning programs. Further research is necessary to confirm the utility of these specific objective biomarkers in larger cohorts and across multiple training situations. [ABSTRACT FROM AUTHOR]

PURPOSE: Animal research suggests that variations in daily dietary macronutrient distribution may impact fluid consumption. However, this has not been fully investigated in humans. Thus, the purpose of this study was to determine the impact of dietary intake on fluid intake, thirst, and urinary hydration biomarkers. METHODS: Thirty-four participants (44% female; age: 23±4 years; height: 172.9±10.3cm; body mass: 77.2±18.1kg; body fat: 18.4± 8.4%) recorded their food and fluid intake, and provided a 24h urine sample over seven consecutive days. Urinary hydration biomarkers included urine volume (UVOL), urine osmolality (UOSM), urine specific gravity (USG), and urine color (UCOL). Each morning, participants completed two subjective ratings of perceived thirst; a 9-point Likert scale, and 100mm visual analog scales comprised of six indices (thirstiness, pleasantness, dryness, taste, fullness, sickness). RESULTS: Mean weekly macronutrient percentages and total calorie intake were used in multiple regression models as predictors of average total fluid intake, thirst, and urinary hydration markers. Throughout the week, participants reported consuming, on average, 1945±429 calories (36.5±4.4% fat, 44.3±6.3% carbohydrate, 18.5±4.5% protein) and 2508±1122mL fluid per day. Mean 7-day 24h urinary hydration markers were UVOL:1724±850mL, USG :1.017±0.005, UOSM: 565±212, UCOL: 3.89±0.99. Dietary intake that was higher in percentage of fat consumed was associated with higher ratings of "fullness" on morning thirst scale sub ratings (adj R² = 0.1181, p =0.0167). Consuming a greater proportion of calories from protein was associated with increased UVOL (adj R² = 0.1370, p = 0.0340). However, protein intake was not significantly associated with fluid intake (adj R2 = 0.0569, p = 0.2516), regardless of the type of fluid consumed (p > 0.05). UOSM, USG, UCOL and the other indices of thirst were not associated with macronutrient consumption (p>0.05). CONCLUSION: These results suggest increased consumption of dietary protein intake is associated with improved hydration status based on increased 24h urine volume, with the maintenance of other urinary hydration indices. Grant or Funding Information: This study was funded by a University of North Carolina at Greensboro Office of Research Engagement New Faculty Grant. [ABSTRACT FROM AUTHOR]

Activation of ion‐implanted p‐type dopants in gallium nitride has demonstrated great progress utilizing high pressures to enable novel and traditional device architectures; however, such conditions consistently exhibit anomalously enhanced diffusion up to several microns in very short periods of time for device relevant concentrations. Here, this diffusion is shown to be modulated by unintentional hydrogen content within the anneal ambient and thus controllable by inclusion of a high‐temperature hydrogen getter. Furthermore, diffusion is also shown to be greatly suppressed using co‐implanted oxygen at low concentrations while simultaneously maintaining characteristics of p‐type material in photoluminescence. Subsequently, after annealing at 1300 °C for 30 min in 3.8 kbar of nitrogen pressure, the magnesium concentration in the diffusion tail is suppressed by 28% at 1–1.5 μm in depth using a hydrogen getter alone, which reduces hydrogen uptake by 45% and fully suppressed at >1 μm in depth using co‐implantation alone and further reduced with concurrent use of a hydrogen getter. Co‐implantation alone reduces the in‐diffused magnesium dose by 60% compared to reference samples. [ABSTRACT FROM AUTHOR]

The cortisol awakening response (CAR) describes the increase in cortisol within the first 30–60 min after waking from nocturnal sleep, and is a common biomarker used within psychoneuroendocrinology, but the effect of sleep on the CAR is currently unclear. A previous study suggested that reported discrepancies may be due to other lifestyle behaviors such as physical activity; given the role of the CAR in energy regulation and preparation for the day, it is theoretically plausible that activity level would influence the CAR. However, no study has yet utilized objective monitoring of day-to-day sleep and physical activity to investigate potential effects on the CAR. This study aimed to test the hypotheses that either sleep duration or sleep quality would interact with the prior 24 h′ physical activity to predict the CAR on the following morning. Salivary samples were collected from 85 young adults (mean = 19.1 years, SD = 1.89) immediately after waking from nocturnal sleep and again 30 min after waking; two complete and consecutive days were used. Participants wore accelerometers (ActiGraph, wGT3X-BT) throughout this phase of a larger study, which provided objective measures of sleep duration, number of awakenings, and amount of physical activity. Mixed-effects models with post-hoc regions of significance decompositions tested the hypothesized interaction effects. Results demonstrated a significant interaction between prior day sleep duration and physical activity predicting the next day CAR, wherein short sleep duration and high levels of physical activity resulted in an augmented CAR. Although more sleep clearly predicted a smaller next day CAR in main effect, this study provides additional support that sleep duration effects are also moderated by prior day physical activity. Both behavioral factors should be considered when assessing the CAR and the association between the CAR other psychoneuroendocrine outcomes. • The interaction of objectively measured previous day sleep duration and physical activity predicts the CAR. • The interaction of physical activity and sleep quality, as assessed by the number of awakenings, does not predict the CAR. • Short sleep durations coupled with high levels of physical activity was related to an augmented CAR. • Future investigations of the CAR should consider the effect of physical activity when investigating sleep parameters. [ABSTRACT FROM AUTHOR]

The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching device technology. Here, we report on the use of nanocrystalline diamond (NCD) deposited via microwave plasma enhanced chemical vapor deposition (MP-CVD) as a top-side, device-level thermal management solution on a lateral β-Ga2O3 transistor. NCD was grown via MP-CVD on β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures prior to the gate formation of the field-effect transistor. A reduced growth temperature of 400 °C and a SiNx barrier layer were used to protect the oxide semiconductors from etching in the MP-CVD H2 plasma environment. Raman spectroscopy showed a highly sp3-bonded NCD film was obtained at 400 °C, with grain size of about 50–100 nm imaged via atomic force microscopy. The incorporation of the NCD heat-spreading layer resulted in a β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure field-effect transistor showing a decrease in the total thermal resistance at the gate by 42%. The fabrication process, including the NCD etch in the gate region, will need to be improved to minimize the impact of these processes on important device characteristics (i.e., drain current, threshold voltage, and leakage current). [ABSTRACT FROM AUTHOR]

Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power devices; however, defects in the substrate growth and manufacturing are preventing vertical devices from performing optimally. This paper explores the application of machine learning techniques utilizing data obtained from optical profilometry as input variables to predict the probability of a wafer meeting performance metrics, specifically the breakdown voltage (Vbk). By incorporating machine learning techniques, it is possible to reliably predict performance metrics that cause devices to fail at low voltage. For diodes that fail at a higher (but still below theoretical) breakdown voltage, alternative inspection methods or a combination of several experimental techniques may be necessary. [ABSTRACT FROM AUTHOR]

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations. [ABSTRACT FROM AUTHOR]

This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral β-(AlxGa1−x)2O3/Ga2O3 transistors without sample contamination, long acquisition times, or sophisticated thermometry such as developing deep-ultra-violet compatible thermoreflectance systems. The temperature rise in the channel of a β-(Al0.21Ga0.79)2O3/Ga2O3 heterostructure field-effect transistor (HFET) was mapped using thermoreflectance imaging at 470 nm. First, the thermoreflectance response of the HFET channel was measured using a monochromator, revealing a maximum of the reflectance change around 470–480 nm. Thermoreflectance calibrations were then performed at 470 nm (peak of the reflectance change) and yielded an average thermoreflectance coefficient of 1.06 ± 0.07 × 10−4 K−1. Subsequent measurements of the device (power densities of 0.15–1.47 W/mm and gate-source voltage of 0 V) enabled extraction of a device-level thermal resistance of 51.1 mm·K/W in the channel at the drain-side of the gate. High-resolution, in situ scanning thermal microscopy measurements of the channel temperature rise show good agreement with and further support the thermoreflectance measurements. Finally, the thermal profile across the entire device length (metal electrodes and semiconductor channel) and width was simultaneously measured using thermoreflectance imaging at 470 nm, and the peak temperature rise was measured in the channel at the drain-side of the gate electrode. [ABSTRACT FROM AUTHOR]

The effect of heteroepitaxial β-(AlxGa1−x)2O3 film thickness and Al content on surface morphology was characterized to experimentally determine the critical thickness limitations of the (010) β-(AlxGa1−x)2O3/Ga2O3 heterostructure. High-resolution x-ray diffraction was used to assess the strain state of the films; reciprocal space mapping (RSM) revealed that even cracked films were still fully strained. In cracked films, diffuse scattering was observed in RSMs, indicating lattice tilting. Cracking of the films was investigated using atomic force microscopy (AFM), x-ray topography (XRT), bright-field scanning transmission electron microscopy (BF-STEM), and high-resolution transmission electron microscopy. Using both AFM and XRT, the [001] direction was observed to be the most prevalent crack direction; however, cracks were also observed in the [100] direction. In uncracked regions of the films, XRT revealed the alignment of threading dislocations along the [001] direction. Cross-sectional imaging of the crack geometry and propagation was performed using BF-STEM, and it was observed that the cracks in the [001] direction extended through the thickness of the β-(AlxGa1−x)2O3 film (∼205 nm) and a further ∼100–200 nm into the β-Ga2O3 substrate. Experimental data for critical film thickness showed good agreement with previous theoretical calculations based on the Griffith criterion for crack propagation. [ABSTRACT FROM AUTHOR]

We report selective area n-type doping using ion implantation of Si into semi-insulating, C-doped GaN samples activated using both conventional rapid thermal annealing (RTA) and 30 atm N2 overpressure annealing. Implanted regions were tested for Si activation using Circular Transmission Line Measurements (CTLM), while linear and circular photoconductive switches (PCSS) in the unimplanted regions were used as a test vehicle to separate implanted Si dopant activation from leakage paths generated by N vacancy formation due to damage and decomposition during annealing. We observed that at an optimal temperature around 1060 °C, a low contact resistivity of $1\times 10^{-6}\,\,\Omega $ -cm2 was obtained while preserving the breakdown of the unimplanted regions. [ABSTRACT FROM AUTHOR]

Here, we demonstrate the effects of surface functionalization on a tunable series of nano-sized electron shuttles, toward improving their function in nonaqueous energy storage. The synthesis of a series of polyoxovanadium clusters featuring bridging ether functional groups is reported, revealing the influence of bridging "R" group identity on electrochemical stability in solution. Furthermore, the presence of bridging ether moeities yields enhanced solubility in acetonitrile (up to 1.2 M), highlighting synthetic strategies for the development of organofunctionalized polyoxometalate-derived charge carriers for nonaqueous, electrochemical energy storage. [ABSTRACT FROM AUTHOR]

Codoping of gallium nitride for improved acceptor ionization has long been theorized; however, reduction to practice proves difficult via growth. Herein, implementation of codoping via ion implantation and symmetric multicycle rapid thermal annealing utilizing magnesium codoped with silicon or oxygen is demonstrated. Results show enhanced photoluminescence with both donor species but with an order of magnitude greater increase with concurrent p‐type hall for codoping with oxygen. Furthermore, the addition of nitrogen to balance stoichiometry suppresses defect photoluminescence signals. The incorporation of the donor and nitrogen demonstrates defect reduction beyond magnesium, only implants despite the additional implant dose and resultant damage with coimplantation. The enhanced hole concentrations evident with oxygen incorporation reveal important considerations for device design given unintentional doping during growth and future incorporation of ion implantation capabilities. [ABSTRACT FROM AUTHOR]

AlGaN/GaN high electron mobility transistors on QST engineered substrates are grown with different GaN/AlGaN buffer layer thickness. The as‐grown heterostructures are evaluated for their structural quality via atomic force microscopy, high‐resolution X‐ray diffraction, Raman spectroscopy, and steady‐state thermoreflectance. Transistor devices are fabricated and evaluated via DC and pulsed electrical techniques, as well as thermoreflectance imaging. It is reported that buffer layer thickness of at least 10 μm can result in lateral high electron mobility transistors (HEMTs) with simultaneously high GaN quality, low stress, good DC electrical performance, low current collapse, and low thermal resistance. [ABSTRACT FROM AUTHOR]

Herein, the electrical and thermal performance of lateral AlGaN/GaN high electron mobility transistors (HEMTs) and metal‐insulator‐semiconductor field effect transistors (MISFETs) fabricated with 11 μm thick GaN buffer layers on 200 mm diameter Qromis Substrate Technology (QST) substrates are investigated. The QST substrate has a polycrystalline core engineered to be coefficient of thermal expansion (CTE)‐matched to GaN to minimize wafer bow and residual stress in the GaN film as a result of epitaxial growth. Raman spectroscopy is used to determine the biaxial residual stress in the GaN buffer of the as‐fabricated devices. Electrical characterization is demonstrated on the HEMTs including DC and pulsed output characteristics, DC transfer characteristics, Hall mobility, carrier concentration, sheet resistance, median transition frequency, and maximum stable gain. Finally, the thermal performance of the AlGaN/GaN MISFET is assessed via thermoreflectance thermal imaging at DC power densities up to 19 W mm−1. The thermal resistance of the MISFET, calculated using the peak temperature rises on the gate electrode for DC power densities <10 W mm−1, is measured to be 15.4 mm K W−1, which is comparable with state‐of‐the‐art GaN‐on‐Si lateral transistors. [ABSTRACT FROM AUTHOR]

Defect origins and their propagation behavior were investigated in 25 μm thick homo-epitaxial GaN layers grown on ammono-thermal and void-assisted separation (VAS) substrates using multi-vector x-ray topography in both transmission and reflection geometries. Complex inclusions were identified and their microstructure was analyzed. Additionally, generation of threading dislocation clusters during epitaxial growth is analyzed. Various defects are delineated from the substrate vs epitaxial layers. Growth on the ammono-thermal substrate led to less defective and flatter epitaxial layers compared to the growth on the VAS substrate. Determining the origins and microstructure of defects is crucial toward developing defect mitigation strategies for reliable GaN devices. [ABSTRACT FROM AUTHOR]

To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs resulting from wasted processing effort. Many of the wafer scale characterization techniques—including optical profilometry—produce difficult to interpret results, while models using classical programming techniques require laborious translation of the human-generated data interpretation methodology. Alternatively, machine learning techniques are effective at producing such models if sufficient data is available. For this research project, we fabricated over 6000 vertical PiN GaN diodes across 10 wafers. Using low resolution wafer scale optical profilometry data taken before fabrication, we successfully trained four different machine learning models. All models predict device pass and fail with 70–75% accuracy, and the wafer yield can be predicted within 15% error on the majority of wafers. [ABSTRACT FROM AUTHOR]

Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm−3 were incorporated during epitaxial growth yielding low-doped (net donor concentration <1014 cm−3) films subsequently implanted with Si, Ge, and Sn. Upon Ohmic contact formation to the implanted regions, sheet resistance values of 314, 926, and 1676 Ω/sq were measured at room temperature for the Si-, Ge-, and Sn-implanted samples, respectively. Room temperature Hall measurements resulted in sheet carrier concentrations and Hall mobilities of 2.13 × 1014 /93, 8.58 × 1013/78, and 5.87 × 1013/63 cm2/(V s), respectively, for these three donor species. Secondary ion mass spectroscopy showed a volumetric dopant concentration of approximately 2 × 1019 cm−3 for the three species, resulting in carrier activation efficiencies of 64.7%, 40.3%, and 28.2% for Si, Ge, and Sn, respectively. Temperature-dependent Hall effect measurements ranging from 15 to 300 K showed a nearly constant carrier concentration in the Si-implanted sample, suggesting the formation of an impurity band indicative of degenerate doping. With a bulk carrier concentration of 1.3 × 1019 cm−3 for the Si implanted sample, a room temperature mobility of 93 cm2/(V s) is among the highest reported in Ga2O3 with a similar carrier concentration. The unimplanted Ga2O3:N regions remained highly resistive after the surrounding areas received implant and activation anneal. These results open the pathway for fabricating Ga2O3 devices through the selective n-type doping in highly resistive epitaxial Ga2O3. [ABSTRACT FROM AUTHOR]

Vertical power devices require significant attention to their edge termination designs to obtain higher breakdown voltages without substantial increase in ON-state resistance. A simple edge termination structure for a GaN p-n diode is proposed, comprising a full layer lightly doped p-type GaN region underneath the higher doped ${p} +\!+$ contact layer. A TCAD model of the device is developed, and removal of the portions of ${p}$ ++ cap outside of the device active area in simulations is shown to increase the device blocking voltage capability. It causes the depletion width to increase in the lightly doped p-type layer and allows it to act similar to a junction termination extension (JTE). These predictions are validated empirically, resulting in a 52% measured increase in breakdown capability after selective removal of the ${p}$ ++ cap. This simple edge termination technique can be formed with only a single low-energy nitrogen implant or etching procedure, greatly increasing its manufacturability over more complex structures. Design optimization studies are pursued in TCAD to determine optimal parameter values for further improving breakdown performance. It is shown that the proposed edge termination technique can be employed to produce future high voltage vertical GaN devices without a significant gain in ON-state resistance and with wide tolerance to process variations. [ABSTRACT FROM AUTHOR]

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 1014 H+/cm², the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively. [ABSTRACT FROM AUTHOR]

Optical, electrical, and mass spectrometry experiments were carried out on solution grown GaN crystals to detect and identify the impurities incorporated in faces of different polarity at different growth condition. Selective etching, photoluminescence and cathodoluminescence imaging indicate that Mg acceptors incorporate preferentially in GaN nitrogen polar face. Larger incorporation of Mg was observed on crystals grown at lower temperatures. Capacitance–voltage measurements verified p-type conductivity due to an excess of Mg acceptors on N-polar face of the GaN crystals. These results suggest that epitaxial layers deposited from liquid phase may be the best approach to produce p-type conducting layers with high hole concentration and low defect density. [ABSTRACT FROM AUTHOR]

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown. [ABSTRACT FROM AUTHOR]

To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm2, which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (Ron). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography. [ABSTRACT FROM AUTHOR]