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"Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices".
- Source :
-
Journal of Applied Physics . 8/21/2020, Vol. 128 Issue 7, p1-1. 1p. - Publication Year :
- 2020
- Subjects :
- *BERYLLIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 128
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 145292783
- Full Text :
- https://doi.org/10.1063/5.0024119