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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
- Source :
-
Applied Physics Letters . 11/7/2022, Vol. 121 Issue 19, p1-8. 8p. - Publication Year :
- 2022
-
Abstract
- Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm−3 were incorporated during epitaxial growth yielding low-doped (net donor concentration <1014 cm−3) films subsequently implanted with Si, Ge, and Sn. Upon Ohmic contact formation to the implanted regions, sheet resistance values of 314, 926, and 1676 Ω/sq were measured at room temperature for the Si-, Ge-, and Sn-implanted samples, respectively. Room temperature Hall measurements resulted in sheet carrier concentrations and Hall mobilities of 2.13 × 1014 /93, 8.58 × 1013/78, and 5.87 × 1013/63 cm2/(V s), respectively, for these three donor species. Secondary ion mass spectroscopy showed a volumetric dopant concentration of approximately 2 × 1019 cm−3 for the three species, resulting in carrier activation efficiencies of 64.7%, 40.3%, and 28.2% for Si, Ge, and Sn, respectively. Temperature-dependent Hall effect measurements ranging from 15 to 300 K showed a nearly constant carrier concentration in the Si-implanted sample, suggesting the formation of an impurity band indicative of degenerate doping. With a bulk carrier concentration of 1.3 × 1019 cm−3 for the Si implanted sample, a room temperature mobility of 93 cm2/(V s) is among the highest reported in Ga2O3 with a similar carrier concentration. The unimplanted Ga2O3:N regions remained highly resistive after the surrounding areas received implant and activation anneal. These results open the pathway for fabricating Ga2O3 devices through the selective n-type doping in highly resistive epitaxial Ga2O3. [ABSTRACT FROM AUTHOR]
- Subjects :
- *CARRIER density
*HALL effect
*TIN
*GASES
*OHMIC contacts
*MASS spectrometry
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 160173962
- Full Text :
- https://doi.org/10.1063/5.0120494