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In this article, the prepared flexible self-aligned top-gate (SATG) In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) have mobility of 14.09 cm $^{{2}}\cdot $ V $^{-{1}}\cdot $ s $^{-{1}}$ and negative bias illumination stress (NBIS) less than −0.18 V. The bending radius is reduced from infinity to 5 mm with almost no change in subthreshold swing (SS), maintaining a good performance of 0.13 V $\cdot $ dec $^{-{1}}$ . However, the device performance gradually degrades as the bend radius is further reduced and the bend angle is decreased. The analysis results indicate that the main reason for this phenomenon is the increase of donor-like states and acceptor-like states in the Gaussian distribution.

In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm2 V-1 s-1 and the current ratio ( ${I}_{\text {on}}$ / ${I}_{\text {off}}$ ) increased from $1.2\times 10^{{7}}$ to $4.3\times 10^{{8}}$ . X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.

The influence of anisotropy induced by the crystallographic texture on the elastocaloric cooling effect of rolled NiTi alloy was investigated. Cyclic tensile tests were conducted along various directions angles (θ) between the rolling direction (RD) and the transverse direction (TD). The results demonstrated that the dominant texture component of the material were {110}<110> and {001}<110>. With the presence of texture component {110}<110> and {001}<110>, the elastocaloric cooling effect of rolled NiTi alloy presented unusual anisotropy. The adiabatic temperature change ΔTadiis maximum in the θ = 0° direction (//RD) and minimum in the θ = 90° (//TD)direction. The material coefficient of performance COPmatand Carnot COPwere also analyzed and evaluated. The maximum COPmatand Carnot COPobtained were 26.5 and 67%, respectively, indicating a remarkable balance between cooling capacity and efficiency. The present research shed light on optimizing the elastocaloric cooling effect by introducing crystallographic texture characteristic in rolled NiTi alloy.

Superplastic forming is a practical method to manufacture complex-shaped parts of titanium alloys with large deformation. Laminated parts of dissimilar titanium alloys fabricated by superplastic forming can achieve excellent performance by combining the advantages of components. This work displays the superplastic tension behavior and microstructural evolution of dissimilar TC4/SP700 laminate prepared by the diffusion bonding process. Two titanium alloys can achieve metallurgical bonding at parameters of 800 ℃/1 h/5 MPa. Except for dynamic recrystallization and grain growth behaviors upon superplastic tension, stress-induced phase transformation plays an important role in α to β phase transformation apart from the elevated temperature. The superplastic deformation can be attributed to the grain boundary sliding accommodated multiplex motion of dislocations. In addition, the retained strengths of all dissimilar TC4/SP700 laminates after superplastic deformation with different strain rates and temperatures range from 807 to 890 MPa.

ObjectiveOur study aimed to explore the influence of gut microbiota and their metabolites on intracranial aneurysms (IA) progression and pinpoint-related metabolic biomarkers derived from the gut microbiome.DesignWe recruited 358 patients with unruptured IA (UIA) and 161 with ruptured IA (RIA) from two distinct geographical regions for conducting an integrated analysis of plasma metabolomics and faecal metagenomics. Machine learning algorithms were employed to develop a classifier model, subsequently validated in an independent cohort. Mouse models of IA were established to verify the potential role of the specific metabolite identified.ResultsDistinct shifts in taxonomic and functional profiles of gut microbiota and their related metabolites were observed in different IA stages. Notably, tryptophan metabolites, particularly indoxyl sulfate (IS), were significantly higher in plasma of RIA. Meanwhile, upregulated tryptophanase expression and indole-producing microbiota were observed in gut microbiome of RIA. A model harnessing gut-microbiome-derived tryptophan metabolites demonstrated remarkable efficacy in distinguishing RIA from UIA patients in the validation cohort (AUC=0.97). Gut microbiota depletion by antibiotics decreased plasma IS concentration, reduced IA formation and rupture in mice, and downregulated matrix metalloproteinase-9 expression in aneurysmal walls with elastin degradation reduction. Supplement of IS reversed the effect of gut microbiota depletion.ConclusionOur investigation highlights the potential of gut-microbiome-derived tryptophan metabolites as biomarkers for distinguishing RIA from UIA patients. The findings suggest a novel pathogenic role for gut-microbiome-derived IS in elastin degradation in the IA wall leading to the rupture of IA.

To enable ultrahigh-resolution displays, there is an urgent requirement for novel structures and processes that enhance the performance of thin film transistors (TFTs). Thermal atomic layer deposition (TH-ALD) emerges as a promising technique due to its capabilities in achieving controlled composition and large-area deposition. Here, we report a method for the vertical dimension control of ultrahigh performance indium-gallium-zinc-oxide (IGZO) TFTs fabricated via TH-ALD. By carefully adjusting the ratio and stacking sequence of InOx, GaOx, and ZnOx layers, our devices demonstrate outstanding performance characteristics. These include a field-effect mobility of 26.5 cm2/Vs, a threshold voltage of −0.06 V, an ${I}_{\text {on}}/{I}_{\text {off}}$ ratio of $10^{{7}}$ , and a subthreshold swing (SS) of 0.15 V/decade, while maintaining a reasonable carrier density level of approximately $10^{{18}}$ cm $^{-{3}}$ . Based on the evaluation of physical, chemical, and optical analyses, a systematic investigation is conducted into how deposition routes affect performance, with the purpose of strategically improving overall performance and preventing problems like conductivity similar to that of conductors or insulators. The results indicate that IGZO TFTs fabricated via TH-ALD hold great potential advantages in ultrahigh-resolution displays industry.

High temperature in diffusion bonding (DB) process severely deteriorates the performance of zirconium (Zr) R60702 in extreme chemical environment. Therefore, it is important to reduce the DB temperature of Zr R60702. In this work, low-temperature diffusion bonding of Zr R60702 at 750 °C is realized by 0.3 wt% hydrogen addition while 900 °C is required in DB process for unhydrogenated Zr R60702. The shear strength of the hydrogenated joint bonded at 750 °C reaches 388 MPa, which is 117.98% higher than that of the unhydrogenated joint bonded at 750 °C and equal to that of the unhydrogenated joint bonded at 900 °C. The effects of hydrogen addition in Zr R60702 on the microstructure evolution, phase transformation temperature, interatomic bonding and self-diffusion coefficient of Zr atoms are investigated in detail. The results show that the optimized DB properties can be attributed to the improvements of its grain boundary diffusion, plasticity and self-diffusion coefficient of Zr atoms.

In this article, it is demonstrated that the photonic annealing process of ultraviolet (UV) irradiation or rapid thermal annealing (RTA)-assisted LA technique can effectively enhance the bias and illumination stability of full-solution-processed oxide thin film transistor (TFT). Although both post-annealing treatments have comparable effects, UV irradiation has relatively less heat loss and time consumption of only 3 min, compared to the RTA process that heats at a temperature of 400 °C and holds 10 min. Depending on the laser annealing (LA)/UV technique, the amorphous hafnium-aluminum oxide (HAO) dielectric thin film exhibits a smooth surface with an rms value of 0.293 nm, a high optical bandgap of 6.19 eV, and good dielectric performance with high dielectric constants of 12.9, low leakage current densities, and high breakdown field of about 4 MV/cm. Moreover, full-solution-processed indium-tin-oxide (ITO)–HAO–tungsten-zinc-tin-oxide (WZTO) TFT shows excellent overall properties with the mobility ( $\mu $ ) of 10.65 cm $^{{2}}\cdot \text{V}^{-{1}}\cdot \text{s}^{-{1}}$ , subthreshold swing (SS) of 198 mV/dec. And the device has good bias and illumination stability, especially the threshold voltage ( ${V}_{T}$ ) shifts are all less than 3 V under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS) testing for 10000 s. These indicate the potential for the photonic annealing process of the UV-assisted LA technique on improving the stability of the full-solution-processed TFTs, which is attributed to high-throughput fabrication for large-area, transparent, and flexible electronics.

Position identification is one of the most important tasks for many real-time location-oriented applications in the Internet of Things (IoT). However, precise and robust indoor localization always suffers a lot from the high complexity of the indoor environment. In order to attack this problem, a new kernel learning paradigm named kernel adaptive filtering has come to our attention. Kernel adaptive filters (KAFs) have achieved great success except for their growing network structure, which leads to a heavy storage burden. To balance the accuracy with the size of neural networks, sparsification methods are usually initiated into the KAFs to produce a sparse structure of neural networks. Different from traditional sparse approaches, the Nyström method employs a subcollection of data sampling points to generate a fixed-size filtering structure, which can effectively approximate the space spanned by whole samples. In this work, in order to efficiently fight against the large abnormalities in the indoor environment such as impulsive noise, the Matérn kernel is applied to KAFs for the first time. Based on it, a so-called exponential weighted Matérn kernel recursive maximum correntropy (mKRMC) and its Nyström approximation version, Nyström exponential weighted mKRMC (Nys-mKRMC), are proposed to obtain the desired accuracy performance with a sparse filter structure. In addition, the convergence proof of the proposed Nys-mKRMC has also been given. Finally, extensive experimental results demonstrate that both the proposed mKRMC and Nys-mKRMC can provide high accuracy and strong robustness with the compact size of the filter structure compared with the state-of-the-art KAFs and traditional machine learning methods.

Rapid endothelialization is extremely essential for the success of small-diameter tissue-engineered vascular graft (TEVG) (<6 mm) transplantation. However, severe inflammation in situoften causes cellular energy decline of endothelial cells. The cellular energy supply involved in vascular graft therapy remains unclear, and whether promoting energy supply would be helpful in the regeneration of vascular grafts needs to be established. In our work, we generated an AMPK activator (5-aminoimidazole-4-carboxamide ribonucleotide, AICAR) immobilized vascular graft. AICAR-modified vascular grafts were successfully generated by the co-electrospinning technique. In vitroresults indicated that AICAR could upregulate energy supply in endothelial cells and reprogram macrophages (MΦ) to assume an anti-inflammatory phenotype. Furthermore, endothelial cells (ECs) co-cultured with AICAR achieved higher survival rates, better migration, and angiogenic capacity than the controls. Concurrently, a rabbit carotid artery transplantation model was used to investigate AICAR-modified vascular grafts at different time points. The results showed that AICAR-modified vascular grafts had higher patency rates (92.9% and 85.7% at 6 and 12 weeks, respectively) than those of the untreated group (11.1% and 0%). In conclusion, AICAR strengthened the cellular energy state and attenuated the adverse effects of inflammation. AICAR-modified vascular grafts achieved better vascular remodeling. This study provides a new perspective on promoting the regeneration of small-diameter vascular grafts.

The multikernel adaptive filters (MKAFs) have been successfully applied to resolve the issue of kernel parameter selection in traditional single kernel adaptive filters. However, owing to the linear growing network structures, conventional MKAFs commonly suffer a lot from large computational and memory burdens. To solve this problem, a multiple Nyström approximation is proposed to curb the computational complexity of MKAFs in this brief. More concretely, the multiple Nyström method is incorporated into the kernel generalized Cauchy conjugate gradient algorithm, generating a novel multiple Nyström kernel generalized Cauchy conjugate gradient algorithm (MNKGCCG). It is noted that the MNKGCCG can achieve the desirable filtering performance with low computational cost in the fixed-dimensional feature space. Experimental results on Mackey-Glass time series and sunspots time series predictions in non-Gaussian noise environments demonstrate the superiorities of the proposed MNKGCCG algorithm in terms of filtering accuracy and robustness.

The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was improved using a carbon tetrafluoride (CF $_{{4}}{)}$ plasma treatment of the back channel (BC) after the wet-etching process of source–drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of $\text{H}_{{2}}\text{O}_{{2}}$ -based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from $7.3\times 10^{{5}}$ to $1.1\times 10^{{10}}$ , and the threshold voltage shift of negative bias illumination stability (NBIS) improves from −3.4 to −0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.

This paper presents a oxide thin film transistors with high mobility by a new fabricate method. The high mobility TFT with ultra‐high mobility of 55cm2/Vs has been obtained, and the PBTS and NBTS has also been optimized.

• A generalized Student's t-based kernel function, and a new kernel adaptive filtering (KAF) algorithm named generalized Student's t kernel adaptive filter (GStKAF) are designed under the KMPE error criterion for indoor positioning under the IoT framework. • The L1-norm is proposed as the penalty to embed into the GStKAF and the resulting sparse GStKAF (SGStKAF) can provide more compact size of the neural networks. • Three experimental results show that the proposed SGStKAF has good robustness against the mixed noise consisting of abrupt noise and Gaussian noise while maintaining the high accuracy performance. The mixed noise such as Gaussian noise together with the abrupt noise widely exists in the indoor environment, which always leads to the problem of performance degradation of the positioning system under the Internet of Things (IoT). In this paper, a novel kernel function named generalized Student's t kernel (GSt) and a resulting sparse generalized Student's t kernel adaptive filter (SGStKAF) is proposed to attack this problem. The proposed SGStKAF utilizes the kernel mean p -power error criterion (KMPE) with the L 1 -norm penalty. The proposed SGStKAF has three significant features. Firstly, the generalized Student's t kernel can suppress the abrupt noise effectively. Secondly, the L 1 -norm penalty guarantees that the fixed-point sub-iteration is available so that the more precise solution can be obtained in a few iterations. At last, a sparse structure of neural networks for the implementation of the proposed method can also be obtained via the L 1 constraint. Three experiments and comparisons are carried out to prove the effectiveness of the proposed positioning framework in terms of accuracy and robustness in both the simulation situation and the real-world indoor environments. [ABSTRACT FROM AUTHOR]

Hydrogen embrittlement (HE) poses a significant challenge for the development of high-strength metallic materials. However, explanations for the observed HE phenomena are still under debate. To shed light on this issue, here we investigated the hydrogen-defect interaction by comparing the dislocation structure evolution after hydrogen adsorption and desorption in a Fe-28Mn-0.3C (wt%) twinning-induced plasticity steel with an austenitic structure using in situ electron channeling contrast imaging. The results indicate that hydrogen can strongly affect dislocation activities. In detail, hydrogen can promote the formation of stacking faults with a long dissociation distance. Besides, dislocation movements are frequently observed during hydrogen desorption. The required resolved shear stress is considered to be the residual stresses rendered by hydrogen segregation. Furthermore, the microstructural heterogeneity could lead to the discrepancy of dislocation activities even within the same materials.

Thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) have been demonstrated in applications such as displays and solid-state lightings. However, weak stability and inefficient emission of blue TADF OLEDs are two key bottlenecks limiting the development of solution processable displays and white light sources. This work presents a solution-processed OLED using a blue-emitting TADF small molecule bis[4-(9,9-dimethyl-9,10-dihydroacridine) phenyl]sulfone (DMAC-DPS) as an emitter. We comparatively investigated the effects of single host poly(N-vinylcarbazole) (PVK) and a co-host of 60% PVK and 30% 2,2′-(1,3-phenylene)-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7) on the device performance (the last 10% is emitter DMAC-DPS). The co-host device shows lower turn-on voltage, similar maximum luminance, and much slower external quantum efficiency (EQE) rolloff. In other words, device stability improved by doping OXD-7 into PVK, and the device impedance simultaneously and significantly reduced from 8.6 × 103to 4.2 × 103Ω at 1000 Hz. Finally, the electroluminescent stability of the co-host device was significantly enhanced by adjusting the annealing temperature.

Rainwater cellars collect and store rainwater to make full use of water resources and improve the problem of drinking water shortages. The treatment of rainwater cellars is therefore of great significance. In this study, we tested the performance of the multi-dimensional electrode electro- flocculation/submerged ultrafiltration process on the removal of ammonia nitrogen, total phosphorus (TP), chemical oxygen demand (CODMn), and UV254from cellar rainwater. The effects of plate spacing, current density, activated carbon dosage, and electro-flocculation time were analyzed. The integration of the submerged ultrafiltration and electro-flocculation/submerged ultrafiltration processes was found to promote cellar rainwater quality. The removal rates of ammonia nitrogen, TP, CODMn, and UV254using the combined processes were 53.17%, 90.81%, 59.55%, and 37.67% respectively, corresponding to an optimal plate spacing of 10 mm, current density of 18.51 A/m2, activated carbon dosage of 60 mg/L, and electro-flocculation time of 15 min. The energy consumption to remove pollutants using the multi-dimensional electrode electrocoagulation process was 0.215 KWh/g, which verifies that the process effectively purifies cellar rainwater.

High sensitivity and linear response over a wide sensing range are important in flexible pressure sensors for their practical applications in biomimetic electronics and human–machine interactions. Previous studies regarding flexible pressure sensors have primarily focused on their high sensitivity, whereas they generally exhibit a narrow linear sensing range. In this article, a hierarchical structure with conical secondary features is reported, and its role in enhancing the linear sensing range of piezoresistive pressure sensors is demonstrated. We find that the conical secondary features on the hierarchical structure significantly improve the linear relationship between the contact area and applied force over a broad range. This advantage endows the sensor with a wide linear sensing range. To obtain this type of hierarchical structure, pollen grains of wild chrysanthemum are exploited as templates, and the prepared sensor presents a high sensitivity of 3.5 kPa–1over an ultrawide response range of 0–218 kPa with good linearity via a coefficient of determination (R2) of 0.997. Furthermore, owing to the simple and scalable process, a sensor array with high density is fabricated to map the spatial pressure distribution and simulate an electronic skin to detect Braille characteristics.

Diffusion bonding is widely used for joining similar or dissimilar materials. It is necessary to develop a suitable approach to describe the variation of the bonding ratio throughout the bonding process. It helps to obtain the processing window based on limited experimental data. The analytical approach was developed to consider the effects of temperature, pressure and holding time on diffusion bonding ratio. The analytical approach of diffusion bonding of similar materials is further extended to that of dissimilar ones. Both approaches were verified by comparing the prediction and experiment data upon bonding ratio. The average absolute relative errors of the approaches of similar and dissimilar materials are 3.80% and 6.28%, respectively. Both approaches indicate good prediction accuracy.

A new mathematical model based on real surface morphology is derived to accurately predict the void closure time, bonding ratio and void distribution state in diffusion bonding process, which considers short-wavelength asperities distributing on long-wavelength ones. The wavelength of long-wavelength asperities plays a key role in calculating the contribution of grain boundary diffusion mechanism. New formulas are built to calculate the transferred mass induced by surface source mechanism. The contributions of main mechanisms to void closure can be accurately predicted by using the proposed model. It is verified with a case containing long- and short-wavelength asperities and two cases consisting of the surface asperities with the same height and wavelength. The predicted void size and distribution state are consistent with experimental results in case one. The maximum and standard deviations between prediction and experiment are 3.2 % and 1.0 % for case two, 13.5 % and 7.3 % for case three, respectively. The present model shows a higher prediction accuracy than previous ones.

Organic semiconducting materials are promising for the fabrication of flexible ionizing radiation detectors for imaging because of their tissue equivalence, simple large-scale processing, and mass production. However, it is challenging to achieve high-sensitivity detection for organic direct detectors prepared by low-cost solution processing because of the compromise between thickness and carrier transport. In this study, high-performance organic direct X-ray detectors were fabricated by building a micrometer-thick bulk heterojunction (BHJ) using poly(3-hexylthiophene-2,5-diyl) (P3HT):(6,6)-phenyl c71 butyric acid methyl ester. A 5 μm BHJ film was fabricated by drop-casting and enhanced crystallization of P3HT using binary solvents and high-boiling-point additives to improve the charge carrier mobility. Furthermore, this organic direct X-ray detector has a sensitivity of >654.26 μC Gyairs–1and a self-powered response. Because of the architecture of the thick active layer and the energy cascade in this diode detector, it has a very low dark current of 46.26 pA at −2 V. A fast and efficient approach was developed for fabricating thick, highly mobile organic BHJ films for high-performance direct X-ray detectors. It has great potential for application in a new generation of flexible and portable large-area flat-panel detectors.

In this paper, the Sr‐doped In2O3thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In2O3TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping.

In recent times, high-performance flexible pressure sensors that can be fabricated in an environmentally friendly and low-cost manner have received considerable attention owing to their potential applications in wearable health monitors and intelligent soft robotics. This paper proposes a highly sensitive flexible piezoresistive pressure sensor based on hybrid porous microstructures that can be designed and fabricated using a bio-inspired and low-cost approach employing the Epipremnum aureumleaf and sugar as the template. The sensitivity and detection limit of the obtained pressure sensor can be as high and low as 83.9 kPa–1(<140 Pa) and 0.5 Pa, respectively. According to the mechanism and simulation analyses, the hybrid porous microstructures lower the effective elastic modulus of the sensor and introduce an additional pore resistance, which increases the contact area and conductive path with loads, thereby contributing to the high sensitivity that exceeds that of traditional microstructured pressure sensors. Real-time monitoring of human physiological signals such as finger pressing, voice vibration, swallowing activity, and wrist pulse is demonstrated for the proposed device. The high performance and easy fabrication of the hybrid porous microstructured sensor can encourage the development of a novel approach for the design and fabrication of future pressure sensors.

ObjectivesTo characterize the safety and efficacy of large woven stents in the treatment of vertebrobasilar dolichoectasia (VBD).MethodsWe retrospectively reviewed 19 consecutive patients with VBD treated with large woven intracranial stent (Leo stents) between January 2016 and December 2018. The clinical symptoms and angiograms of all the patients were recorded.ResultsThe patients were treated with 1–3 large Leo stents (5.5 mm x 75 mm, 5.5 mm x 50 mm, or 4.5 mm x 40 mm), with or without coiling. They had follow-up angiography and MRI between 3 months and 1 year. Digital subtraction angiography showed 16 patients with complete reconstruction of the target vessels, one patient with almost complete reconstruction, and two patients with partial reconstruction. All patients had symptomatic improvement shortly after treatment, but two patients developed recurrent dysphagia at 8 and 18 months, respectively.ConclusionsDeployment of woven stents with or without supportive coiling may offer symptom relief and reconstruction in patients with VBD.

•Obtained stable sheared edge quality and better tensile elongation of QP980 with blanking die clearance ratio as 7% & 11%.•Realized similar elongation & fracture strain as those cut by WireEDM for QP980 blanked by oblique edge with 5° or 10° angle.•Received larger elongation & fracture strain than those cut by laser for QP980 blanked by oblique edge with 5° or 10° angle.•Explained mechanisms of two typical crack patterns by assumption and fractured surface characterization.

Sb-SnO2/potassium titanate (SSP) composites were synthesized by densely coating Sb-doped SnO2on the surface of fibrous-like potassium titanate. X-ray diffraction demonstrated that Sb was successfully doped into the crystal lattice of SnO2. To improve the dispersion of SSP composites in the acrylic resin, the as-prepared SSP was modified with sodium stearate. Fourier transform infrared spectra, thermogravimetric analysis, and transmission electron microscopy confirmed that stearate radicals existed on the surface of SSP in the form of physical adsorption. The hydrophilic degree of modified SSP was largely improved by water contact angle measurements. The properties (surface resistivity and mechanical properties) of the conductive coatings prepared by adding the obtained composites were investigated in detail. The modified SSP coatings exhibit more superior electrical conductivity due to their better dispersion in the matrix compared with SSP. Moreover, the obtained composite coatings present high pencil hardness of 4H–5H and excellent adhesion force, flexibility, and impact resistance.

ABSTRACTSelective macroautophagy/autophagy targets specific cargo by autophagy receptors through interaction with ATG8 (autophagy-related protein 8)/MAP1LC3 (microtubule associated protein 1 light chain 3) for degradation in the vacuole. Here, we report the identification and characterization of 3 related ATG8-interacting proteins (AT1G17780/ATI3A, AT2G16575/ATI3B and AT1G73130/ATI3C) from Arabidopsis. ATI3 proteins contain a WxxL LC3-interacting region (LIR) motif at the C terminus required for interaction with ATG8. ATI3 homologs are found only in dicots but not in other organisms including monocots. Disruption of ATI3Adoes not alter plant growth or development but compromises both plant heat tolerance and resistance to the necrotrophic fungal pathogen Botrytis cinerea. The critical role of ATI3A in plant stress tolerance and disease resistance is dependent on its interaction with ATG8. Disruption of ATI3Band ATI3Calso significantly compromises plant heat tolerance. ATI3A interacts with AT3G56740/UBAC2A and AT2G41160/UBAC2B (Ubiquitin-associated [UBA] protein 2a/b), 2 conserved proteins implicated in endoplasmic reticulum (ER)-associated degradation. Disruption of UBAC2Aand UBAC2Balso compromised heat tolerance and resistance to B. cinerea. Overexpression of UBAC2 induces formation of ATG8- and ATI3-labeled punctate structures under normal conditions, likely reflecting increased formation of phagophores or autophagosomes. The ati3and ubac2mutants are significantly compromised in sensitivity to tunicamycin, an ER stress-inducing agent, but are fully competent in autophagy-dependent ER degradation under conditions of ER stress when using an ER lumenal marker for detection. We propose that ATI3 and UBAC2 play an important role in plant stress responses by mediating selective autophagy of specific unknown ER components.

Previous research on tissue-engineered blood vessels (TEBVs) has mainly focused on the intima or adventitia unilaterally, neglecting the equal importance of both layers. Meanwhile, the efficacy of grafts modified with vascular endothelial growth factor (VEGF) merely has been limited. Here, we developed a small-diameter graft that can gradually release VEGF and γ secretase inhibitor IX (DAPT) to enhance tissue regeneration and remodeling in both the intima and adventitia. In vitro, experiments revealed that the combination of VEGF and DAPT had superior pro-proliferation and pro-migration effects on endothelial cells. In vivo, the sustained release of VEGF and DAPT from the grafts resulted in improved regeneration and remodeling. Specifically, in the intima, faster endothelialization and regeneration of smooth muscle cells led to higher patency rates and better remodeling. In the adventitia, a higher density of neovascularization, M2 macrophages and fibroblasts promoted cellular ingrowth and replacement of the implant with autologous neo-tissue. Furthermore, western blot analysis confirmed that the regenerated ECs were functional and the effect of DAPT was associated with increased expression of vascular endothelial growth factor receptor 2. Our study demonstrated that the sustained release of VEGF and DAPT from the graft can effectively promote tissue regeneration and remodeling in both the intima and adventitia. This development has the potential to significantly accelerate the clinical application of small-diameter TEBVs.

In this article, we reported the stacked structure zinc–indium-tin oxide (ZITO) thin-film transistors (TFTs) with graphene nanosheets (GNSs) prepared by solution process. GNSs were used as bridge layer between dual-ZITO layers. The transmission of stacked ZITO/GNSs/ZITO films are more than 80% in the visible region and the resistivity of ZITO films with GNSs bridge layer decreased from 502.9 to 13.4 Ω cm. The solution-processed TFT devices with GNSs bridge layer exhibited a desirable characteristic with a subthreshold slope of 0.25 V/dec and current on–off ratio of 1 × 107, and the saturation filed effect mobility is improved to 45.9 cm2V–1s–1, which exceeds the mobility values of the pristine ZITO TFTs by one order. These results demonstrate the solution-processed ZITO/GNSs/ZITO TFTs maybe make a further step to achieve high-performance TFTs and show the potential for next-generation applications.

Thin-film transistors (TFTs) were fabricated by employing amorphous hafnium indium zinc oxide (HIZO) thin films as the active channel layer by the solution process. Thermogravimetry-differential thermal analysis, transmittance measurements, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and Fourier transform infrared analysis were used to study the formation, structure, and optical properties of the HIZO films. The results showed that the addition of Hf to the IZO system resulted in suppression of carrier generation. The HIZO TFTs exhibited lower off-currents and higher onoff current ratios than IZO TFTs without Hf doping. HIZO TFTs with a Hf doping content of 5 at. % obtained a threshold voltage of 3.7 V, a mobility of 0.27 cm2V-1s-1, a subthreshold swing of 1.2 V/dec, and an on-off current ratio of 106.

In this letter, the top-gate dual-active-layer TFT has been fabricated by in situ deposition of oxygen-rich ultrathin In-Sn-O layer on a top of the In-Ga-Zn-O (IGZO) active layer in order to suppress the hysteresis and improve negative bias illumination stability. The oxygen-rich ultrathin In-Sn-O layer can effectively reduce the oxygen vacancies concentration of the semiconductor layer from 33.16 to 1.13%. The decrease of oxygen vacancies indicates that the trap density and electron trapping are reduced, resulting in a reduced hysteresis from 0.66 to 0.02 V. Simultaneously, the negative bias illumination stability has been effectively improved from −0.89 to −0.29 V.

Abstract

The electroplastic (EP) tensile properties of 5A90 Al–Li alloys compared with thermal tension were investigated. The microstructural variation at different conditions was observed by SEM and TEM. The current density significantly influences the elongation and the flow stress. With increasing current density, wider and deeper dimples on the fracture surfaces and less dislocation density and pile-ups in the EP tension samples were observed compared with room-temperature and thermal tension, which indicates the plasticity improvement and flow stress reduction. The EP effect (EPE) mainly results from a comprehensive function of Joule heating and pure EPE. Among them, Joule heating effect is perhaps a dominant factor.

The fracture morphologies of several advanced high-strength steels (DP590, DP780, DP980, M1180, and M1300) formed in uniaxial tension and piercing were observed by scanning electron microscope, and then quantitatively analyzed by image processing technique. The tension-induced fractographs are dominated by obvious uniform or bimodal size dimples, while shearing-induced fractographs have smooth surfaces and few dimples. The fracture zone of higher grade DP steels is smoother. As for M1180 and M1300, the fracture zones consist of very small dimples and smooth brittle surfaces. The dimple size of M1300(~1.2 μm) is smaller than that of M1180(~1.6 μm). Moreover, in the tensile fracture, the quantitative correlation between average dimple diameter (d) and tensile strength (σ) can be represented by d= 10,502.32σ−1.21. However, the relation between dimple density and tensile strength is not monotonic due to the appearance of bimodal size dimples with increase of tensile strength. For shearing-induced fracture during piercing, the fitted empirical model between the percentage of burnish zone (f) and tensile strength can be described as f= 239.9σ−0.36.

The microstructure characteristics and plastic deformation behavior of SUS304 metastable austenitic stainless steel sheets have been investigated during tensile process at different strain rates at room temperature. The yield stress continuously increases with strain rates due to low fraction of martensite transformed from austenite at 0.2% plastic stain. While the ultimate tensile stress (UTS) and elongation gradually decreases and then slightly increases with increase in strain rate from 0.0005 s−1to 0.1 s−1, which is attributed to the variation of the martensite fraction that is affected seriously by adiabatic heating. A higher temperature increase in the tensile specimens restricts the martensitic transformation at high strain rate. The strain rate of 0.1 s−1is considered as a transition deformation rate from quasi-static state to plastic forming, where the transformed martensitic content is very small in a higher strain rate range. Anomalous stress peaks in the later half stage of deformation occur at a very low strain rate (i.e., 0.0005 s−1) result from X-shaped strain localization repeatedly sweeping over the specimen. With increasing strain rates, the variation of dimple number density follows similar trend as that of UTS and ductility because martensite fraction mostly influences void nucleation and growth.

Indium-Tin-Oxide (ITO) film prepared by DC magnetron sputtering was used as a current spread layer for LEDs. After the annealing treatment, the physical prosperities of p-GaN based LED have been investigated. The N2 annealing improved the surface roughness of ITO film to reach the smallest value (8 nm RMS) and exhibited an ohmic contact for ITO/p-GaN interface with the forward voltage decreasing. In comparison with electron beam evaporation, the ITO film prepared by DC magnetron sputtering had better optical and electronic prosperities after the annealing treatment.

The Effects of surface pretreatments of p-GaN using H2SO4, HF, KOH solution on the optical and electrical properties of GZO/p-GaN contacts have been investigated using a rf magnetron sputter deposition. The current-voltage characteristics of GZO/p-GaN contact is slightly improved using KOH solution treatment. Contact barrier of GZO/p-GaN can be considerably reduced on annealing at 530 degC for 15 min in N2 ambient and the ohmic contact is almost achieved for with KOH-treated sample. the light luminance of 86.7 cd/m2 at current of 20 mA is obtained for GZO electrodes of LEDs with KOH pretreatment.

Influences of O2Ar flux ratio R on surface morphology and structural evolution have been studied in the case of ZnO films deposited on glass substrates by radiofrequency rf magnetron sputtering. Results of atomic force microscopy AFM, Xray diffraction, and Xray photoelectron spectroscopy XPS clearly indicate that the surface rootmeansquare rms roughness, crystallinity, stress, and defects strongly depend on the R. At R  12, the crystallized ZnO film with highly caxis orientation and highly smooth surface has been obtained. The implication of these results is that a moderate Ris needed to realize highquality ZnO film.

In this density functional theory investigation of the radiosensitization properties of 5-halogen-substituted uracils, the potential energy surfaces of the halouracils before and after electron attachment are investigated. The electron affinities (EA's) of uracil, halouracils, and uracilyl radical (U-yl•) are calculated. The gas-phase adiabatic EA's of the halouracils after zero point energy (ZPE) corrections are in good agreement with those reported recently (Wetmore, S. D.; Boyd, R. J.; Eriksson, L. A. Chem. Phys. Lett. 2001, 343, 151−158). The U-yl•radical has an exceptionally high AEA of 2.34 eV and proton affinity of 9.5 eV in the gas phase, showing its reactive nature and potential to cause DNA damage when incorporated in the genome. The higher EA of the halouracils compared to that of the DNA bases supports the experimental reports on the increased probability of low-energy electrons to localize on halouracils in DNA, leading to dehalogenation reactions and DNA damage. Potential energy surfaces (PES) are calculated for dehalogenation to show the relative energy change in the dissociation of halogen from both the neutral molecule and anion radical. The PESs along the C5−X bond of all neutral molecules including uracil show the typical surface expected for a strong covalent bond rupture. Each of the halouracil anion radicals is found to have two thermally accessible electronic states of differing symmetries, i.e., π*(A") and σ*(A’), that have quite differing properties. Both the pure π* state and the σ* state feature planar geometries. The pure π* state has a PES similar to that of the neutral molecule with a strong C−X bond, while the σ* state shows far weaker C−X bonding. Moreover, there is a mixed state PES that undergoes a transition from a slightly nonplanar π* state to that of a σ* state as the C−X bond distance increases to the crossing point of the two PES. From the full PES that allows for state crossing, the lowest energy barriers for formation of the extended σ* states are estimated to be 20.80, 3.99, and 1.88 kcal/mol for F-, Cl-, and Br-substituted uracil anion radicals, respectively. The overall energetics suggest that the π* to σ* conversions are exothermic for ClU and BrU anions, with ΔHcalculated to be −0.98 and −2.98 kcal/mol, ΔG, −2.32 and −3.80 kcal/mol at 298 K and 1 atm, respectively. Remarkably, for the F−U anion the lowest energy path is not the loss of fluoride ion but the detachment of HF. The sensitivity of the halouracils to low-energy electrons is found to be on the order of BrU ≈ ClU ≫ FU, in agreement with experimental observations.

AbstractAn understanding of the radiation-induced effects in groundwater is essential to evaluate the safe geological disposal of spent fuel. In groundwater, the bicarbonate ion is the predominant and common anion; this work investigated radiation-induced chemical reactions of (bi)carbonate aqueous solutions with steady-state irradiation and pulse radiolysis methods. Aqueous solutions of sodium (bi)carbonate as high as 50 mmol·dm-3were used. The formation of formate, oxalate, and H2O2were measured under different conditions. A complete set of reaction steps and reliable kinetic data for the radiolysis of (bi)carbonate aqueous solutions at ionic strength close to the groundwater were proposed. Kinetic calculations were completed based on the proposed reaction steps and the kinetic data obtained in the present work. The results from the calculation are in good agreement with the experimental results. With these proposed reaction steps and kinetic data, computer simulation can be performed to predict the yield of radiolytic products of (bi)carbonate aqueous solutions as a function of irradiation time and used to evaluate the safety of geological disposal options of spent fuel.

Solution‐processed tetraphenyldibenzoperiflanthene (DBP) films are prepared with three popular solvents, including chroloform (CF), chrolobenzene (CB), and dichrolobenzene (ODCB). The absorption and photoluminescence (PL) spectra of the DBP solution and DBP film are investigated. The absorption spectra between the DBP film and DBP solution are similar, whereas the PL spectrum shape of the DBP film and DBP solution is completely different, originating from the DBP molecular aggregation in the film, causing conjugate expansion, which results in dimer luminescence. The DBP donor layer at 32 nm prepared from solvent of CF, CB, and ODCB achieves a power conversion efficiency (PCE) of 1.42%, 0.88%, and 0.48%, respectively. The annealing temperature and DBP thickness are optimized; the 32 nm‐thick active layer annealed at 50 °C achieves the highest performance. The CF‐DBP film represents an interpenetrating network morphology, slightly higher roughness and hole mobility, which may be the main contribution to the relatively higher photocurrent than the CB‐DBP and ODCB‐DBP devices. Herein, a simple guidance for preparing solution‐processed DBP films is provided and simultaneously its application on organic photovoltaic cells (OPVs) is expanded. Tetraphenyldibenzoperiflanthene (DBP) as a near‐infrared light‐absorbant has demonstrated important applications in organic photovoltaic cells (OPVs). Herein, DBP films are prepared via vacuum thermal evaporation. To get detailed insight into the optical and electrical characteristic of the solution‐processed DBP films, the authors comparably investigate the effect of popular solvents on the film property and corresponding planar heterojunction (PHJ) OPVs.

The effect of illumination on the characteristics of an amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) fabricated at low temperature was investigated in comparison with the characteristics of an amorphous silicon (a-Si) TFT. The a-IGZO TFT exhibited excellent performance with a mobility of 10.5 cm[?]2 V[?]1 s[?]1 and was free of hysteresis when the gate bias swept both forward and reverse. After illumination with white light emitting diode (LED), the shift of threshold voltage (Vth) and hysteresis was not observed, indicating that the devices have potential application for transparent electronics. The a-IGZO TFT was highly susceptible to ultraviolet (UV) light illumination, negative Vth shift was observed under UV illumination. Vth shift increased by the illumination time, and the Vth shift values were [?]2.1 V, [?]1.4 V and 0.3 V at UV LED illumination time of 10 min, 5 min and 1 min, respectively. Persistent photo-induced current vanished when gate bias switched off.

New cyclopentenones, bromomyrothenone B (1) and botrytinone (2), and the known cyclonerodiol (3) were isolated from the marine algicolous fungus of the genus Botrytis. The absolute stereostructures of compounds 1and 2were elucidated on the basis of chemical and physicochemical evidence including quantum chemistry calculation, X-ray analysis, and CD exciton chirality method.

In this work, series‐connected double‐junction tandem solar cells were fabricated by employing the complementary absorbing donors of tetraphenyldibenzoperiflanthene (DBP) and chloroaluminum phthalocyanine (ClAlPc). The tandem cell shows a high open circuit voltage of 1.57 V, summing those of single cells. The optical simulation and experimental results both demonstrate that the subcell (SC) sequence plays an important role in photocurrent and fill factor for tandem cells. It is helpful for current matching to use ClAlPc as a donor in the bottom SC for the ClAlPc‐DBP system, because the power conversion efficiency (ηPCE) is increased by 7% in the ClAlPc‐DBP normal tandem cell relative to the DBP‐ClAlPc reverse tandem cell. The simulated external quantum efficiency (EQE) spectra of the SCs in the DBP‐ClAlPc reverse cell overlap with each other thus resulting in a current mismatch. Via optical modeling, an optimized ClAlPc‐DBP normal tandem cell exhibits a ηPCEof 3.24% by slightly tuning layer thickness.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.

For Abstract see ChemInform Abstract in Full Text.

For Abstract see ChemInform Abstract in Full Text.