Degradation Mechanism and Stability of Flexible Self-Aligned Top-Gate InGaZnO TFT

In this article, the prepared flexible self-aligned top-gate (SATG) In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) have mobility of 14.09 cm<inline-formula> <tex-math notation="LaTeX">$^{{2}}\cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math notation="LaTeX">$^{-{1}}\cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math notation="LaTeX">$^{-{1}}$ </tex-math></inline-formula> and negative bias illumination stress (NBIS) less than −0.18 V. The bending radius is reduced from infinity to 5 mm with almost no change in subthreshold swing (SS), maintaining a good performance of 0.13 V<inline-formula> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula>dec<inline-formula> <tex-math notation="LaTeX">$^{-{1}}$ </tex-math></inline-formula>. However, the device performance gradually degrades as the bend radius is further reduced and the bend angle is decreased. The analysis results indicate that the main reason for this phenomenon is the increase of donor-like states and acceptor-like states in the Gaussian distribution.