1. Advancements in two-dimensional Ti3C2 MXene interfaced semiconductors for room temperature NO2 gas sensing: A review.
- Author
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Sreedhar, Adem, Ravi, Parnapalle, and Noh, Jin-Seo
- Subjects
GAS detectors ,SEMICONDUCTOR junctions ,GAS absorption & adsorption ,ELECTRIC conductivity ,DETECTION limit - Abstract
• Ti 3 C 2 MXene/semiconductor interface for room temperature NO 2 gas sensing. • Abundant 2D Ti 3 C 2 MXene surface area for NO 2 adsorption. • Widened electron depletion layer and Schottky barrier formation. • Highly stable NO 2 gas sensing and immune to humidity. • Limit of detection at ppt and ppb levels. Nowadays, there is a growing global demand for high-performance room temperature gas sensing devices. In this context, we aim to explore the advancements in two-dimensional (2D) Ti 3 C 2 MXene role for toxic NO 2 gas sensing at room temperature. The distinctive advantages of 2D Ti 3 C 2 MXene, including high electrical conductivity, ample surface area, surface termination groups, and layer structure have garnered significant attention towards NO 2 gas adsorption. Further, the compatible regularity of Ti 3 C 2 MXene at the interface of various semiconductors directed the development of potential room-temperature NO 2 gas sensing devices. Further, the leveraging gas sensing (selectivity, response, and recovery) characteristics become increasing attention on Ti 3 C 2 MXene/semiconductor interfaces than pure Ti 3 C 2 MXene. Elaborative control on the depletion layer through the Schottky barrier formation distinguished the room temperature NO 2 gas sensing and led to the evolution of electrophilic NO 2 gas molecule interaction. Remarkably, the great processability of Ti 3 C 2 MXene/semiconductor interface is sensitive to the low detection limit (LOD) of NO 2 gas at parts per billion (ppb) conditions. On the other hand, this review demonstrates the room temperature optoelectronic NO 2 gas sensing capabilities of Ti 3 C 2 -based composites for emphasizing selectivity and recovery. Interestingly, the Ti 3 C 2 MXene/semiconductor composite builds immunity against the atmosphere humidity and achieves stable NO 2 gas sensing. Finally, we have provided conclusions and key points to advance the research on room temperature NO 2 gas sensing of Ti 3 C 2 integrated semiconductors. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2024
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