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This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept., QC 20140521

This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept., QC 20140521

This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept., QC 20140521

This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept., QC 20140521

This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept., QC 20140521

In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental heterogeneous 3D integration processes for MEMS and NEMS devices are presented and discussed., QC 20120907

In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental heterogeneous 3D integration processes for MEMS and NEMS devices are presented and discussed., QC 20120907

In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental heterogeneous 3D integration processes for MEMS and NEMS devices are presented and discussed., QC 20120907

In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental heterogeneous 3D integration processes for MEMS and NEMS devices are presented and discussed., QC 20120907

In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental heterogeneous 3D integration processes for MEMS and NEMS devices are presented and discussed., QC 20120907

Transfer bonding is a reliable cost-efficient and low-temperature CMOS compatible technique which allows batchintegration of materials whose incompatibility with Si makes them unsuitable for monolithic integration. In thisheterogeneous device integration method the material and process incompatibilities inherent in Si IC technology areovercome by fabricating devices on separate substrates and then transferring them onto target (e.g. CMOS) wafers.Transfer bonding has great potential for integrating RF-MEMS devices incorporating, for example, high thermal budgetmaterials such as PZT and PST or non-ferroelectric piezoelectrics such as AlN and ZnO into microwave ICs forenhanced systems performance. This paper presents an overview of technology developments within the EUsponsored project Q2M for the realization of transfer bonded piezoelectrically actuated RF MEMS switches and othercomponents focusing in particular on material factors relating to growth of the piezoelectric films, in this case sol-geldeposited PZT, that restricts the choice of device layers and impact on PZT properties such as microstructure, filmorientation and piezoelectric coefficients. New process developments such as hard masking of PZT pattern during RIEetching and its compatibility with polymer transfer bonding are discussed., QC 20120514