66 results on '"Zheng, Y.D."'
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2. Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization
3. Growth of 4H-SiC on AlN/Si(100) complex substrate by chemical vapor deposition
4. Effects of the polarization fields on the responsivity of the AlN/GaN photodetectors
5. Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures
6. Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition
7. Structure and magnetic properties of Co-doped ZnO powder prepared by sol-gel method
8. Temperature dependence of indium nitride oxidation properties
9. Structural characteristics of self-assembled Ge/Si quantum dot superlattices
10. Influence of polarization-induced electric field on subband structure and electron distribution in Al/sub x/Ga/sub 1-x/N/GaN double quantum wells
11. Impact of V/III ratio on GaN growth by HVPE
12. High-temperature characteristics of strain in AlxGa1-xN/GaN heterostructures
13. Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures.
14. Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition.
15. Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well.
16. Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure.
17. Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on AlxGa1-xN/GaN heterostructures.
18. Catalyst synthesis and growth of indium nitride nanodots.
19. Influence of polarization-induced electric field on subband structure and electron distribution in AlxGa1-xN/GaN double quantum wells.
20. Temperature dependence of strain in AlxGa1-xN/GaN heterostructures.
21. Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE.
22. Extraction of Polarization-Induced Charge Density in Modulation-Doped Al x Ga1−nxN/GaN Heterostructures Based on Schottky C- V Simulation.
23. Prepare of ZnAl2O4/α -Al2O3 complex substrates and growth of GaN films.
24. Silicon nano-crystals based MOS memory and effects of traps on charge storage characteristics.
25. Study of electrical and optical properties of InGaN/AlGaN double heterostructure blue light emitting diodes.
26. Growth of wurtzite GaN films on /spl alpha/-Al/sub 2/O/sub 3/ substrates using light radiation heating metal-organic chemical vapor deposition.
27. Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition.
28. The study on the optical properties of GaN detector on the 6H-SiC substrates.
29. The study on the optical properties of GaN detector on the 6H-SiC substrates
30. Characterization of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures with two subbands occupied
31. Silicon nanocrystal memories
32. Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization
33. Fabrication and characterization of Al/sub x/Ga/sub 1-x/N/GaN heterostructures with high mobility of two-dimensional electron gas
34. Low-frequency noise in narrow channel MOSFETs
35. Study of the laser lift-off technology of GaN films from sapphire substrates
36. Study of electrical and optical properties of InGaN/AlGaN double heterostructure blue light emitting diodes
37. Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
38. Silicon nano-crystals based MOS memory and effects of traps on charge storage characteristics
39. The oxidation of GaN epilayers in dry oxygen
40. AlGaN/GaN/AlGaN ultraviolet photodetectors on Si
41. Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization
42. Growth of wurtzite GaN films on α-Al/sub 2/O/sub 3/ substrates using light radiation heating metal-organic chemical vapor deposition
43. Properties of Pt Schottky contacts on modulation-doped Al/sub x/Ga/sub 1-x/N/GaN heterostructures
44. Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure
45. Effect of dislocations in photoelectrochemical etching process of N-type GaN
46. Memory characteristics of Ge1−xSix/Si hetero-nanocrystals in metal-oxide-semiconductor structures.
47. Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3.
48. Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics.
49. Silicon nanocrystal memories.
50. Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure.
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