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Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure.

Authors :
Yang, H.G.
Shi, Y.
Wu, J.
Zhao, B.
Zhao, L.Q.
Yuan, X.L.
Gu, S.L.
Zhang, R.
Shen, B.
Han, P.
Zheng, Y.D.
Source :
2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443); 2001, p1418-1418, 1p
Publication Year :
2001

Details

Language :
English
ISBNs :
9780780365209
Database :
Complementary Index
Journal :
2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443)
Publication Type :
Conference
Accession number :
81904057
Full Text :
https://doi.org/10.1109/ICSICT.2001.982169