Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure.

MLA

Yang, H. G., et al. “Charge Storage Characteristics in Ge/Si Hetero-Nanocrystals Based MOS Memory Structure.” 2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443), Jan. 2001, p. 1418. EBSCOhost, https://doi.org/10.1109/ICSICT.2001.982169.

APA

Yang, H. G., Shi, Y., Wu, J., Zhao, B., Zhao, L. Q., Yuan, X. L., Gu, S. L., Zhang, R., Shen, B., Han, P., & Zheng, Y. D. (2001). Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure. 2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 1418. https://doi.org/10.1109/ICSICT.2001.982169

Chicago

Yang, H.G., Y. Shi, J. Wu, B. Zhao, L.Q. Zhao, X.L. Yuan, S.L. Gu, et al. 2001. “Charge Storage Characteristics in Ge/Si Hetero-Nanocrystals Based MOS Memory Structure.” 2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443), January, 1418. doi:10.1109/ICSICT.2001.982169.