50 results on '"Celi, D"'
Search Results
2. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
3. HICUM/L2: Extensions over the last decade
4. In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz
5. A two-step de-embedding method valid up to 110 GHz
6. SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node
7. Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS
8. Calibration of 1D doping profiles of SiGe HBTs
9. Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance
10. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
11. Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies
12. Investigation of the base resistance contributions in SiGe HBT devices
13. Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies
14. Impact of BEOL stress on BiCMOS9MW HBTs
15. Robustness of the base resistance extraction method for SiGe HBT devices
16. Extraction of the emitter related space charge weighting factor parameters of HICUM L2.30 using the Lambert W function
17. State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz fT/fMAX
18. Characterization of a 400-GHz SiGe HBT technology for low-power D-Band transceiver applications
19. HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors
20. Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique
21. Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs
22. Automated model complexity reduction using the HICUM hierarchy
23. Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs
24. A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
25. From measurement to intrinsic device characteristics: Test structures and parasitic determination
26. High accuracy temperature bipolar modeling for demanding Bandgap application
27. New Method for Oxide Capacitance Extraction
28. Scalable approach for external collector resistance calculation
29. Impact of neighbor components heating on power transistor electrical behavior
30. New test structures for extraction of base sheet resistance in BiCMOS technology
31. Designing on-wafer calibration standards for advanced high-speed BiCMOS technology.
32. Modeling and parameter extraction of SiGe: C HBT's with HICUM for the emerging terahertz era.
33. Hicum and BSIM3V3.2.4 non linear behavior validation In RF BICMOS SiGeC 0.25µm process for bipolar and CMOS transistors.
34. An improved method for determining the transit time of Si/SiGe bipolar transistors.
35. Transit time parameter extraction for the HICUM bipolar compact model.
36. Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors].
37. A new bipolar extraction tool for wide range of device behaviours.
38. A new extraction method for unit bipolar junction transistor capacitance parameters.
39. A 12V BICMOS technology for mixed analog-digital applications with high performance vertical pnp.
40. 1.2 μm BICMOS Technology for Mixed Analog-digital Applications.
41. A Trench Isolated High Speed Bipolar Process for a 10K Gate, 950MHz, VLSI Circuit.
42. An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI.
43. Method For Accurate Determinaton Of The Intrinsic Cut-off Frequency of IC Bipolar Transistors.
44. Method For Accurate Determinaton Of The Intrinsic Cut-off Frequency of IC Bipolar Transistors
45. A new extraction method for unit bipolar junction transistor capacitance parameters
46. Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]
47. Transit time parameter extraction for the HICUM bipolar compact model
48. A new bipolar extraction tool for wide range of device behaviours
49. A new approach for modelling the thermal behaviour of bipolar transistors
50. A new approach for modelling the thermal behaviour of bipolar transistors.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.