1. Oxide thin-film transistors based on i-line stepper process for high PPI displays
- Author
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Ji-Min Park, Seong Cheol Jang, Seoung Min Lee, Min-Ho Kang, Kwun-Bum Chung, and Hyun-Suk Kim
- Subjects
IGZO ,short-channel ,thin-film transistor ,i-line ,stepper ,Computer engineering. Computer hardware ,TK7885-7895 - Abstract
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with a 1 um channel length were successfully fabricated by i-line lithography with a stepper process, resulting in high throughput. The a-IGZO TFT with a channel length of 1 μm exhibits high mobility of 8.77 cm2/Vs with an on/off current ratio of >3 × 1010. The stepper lithography process is capable of defect-free patterning given its precise layer-to-layer alignment and high image resolutions of the types required for large-area high-PPI displays. Consequently, IGZO TFTs can be fabricated on an 8-inch wafer with only minor electrical property deviations in the turn-on voltage, mobility, and on/off ratio. These results indicate that i-line lithography with a stepper process is a promising process for use in cutting-edge large-area electronics industries.
- Published
- 2023
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