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Preparing fecal microbiota transplants immediately after donation is resource-intensive, and a proportion are destroyed following abnormal screening results. We retrospectively compared two processes, frozen fecal preparation (FFP) and fresh native frozen preparation (FNFP), for clinical efficacy in the treatment of recurrent Clostridioides difficile infection (rCDI). FFP and FNFP were similarly effective with clinical success rates of 76.7% and 86.7% ( P = 0.32), respectively. FNFP is an efficient procedure that saves resources while maintaining clinical efficacy in rCDI., Competing Interests: H.S. reports lecture fee, board membership, or consultancy from Amgen, Fresenius, IPSEN, Actial, Astellas, Danone, THAC, Biose, BiomX, Eligo, Immusmol, Adare, Nestle, Ferring, MSD, Bledina, Pfizer, Biocodex, BMS, Bromatech, Gilead, Janssen, Mayoli, Roche, Sanofi, Servier, Takeda, Abbvie, and Lilly, has stocks from Enterome bioscience, and is co-founder of Exeliom Biosciences.

Autotaxin (ATX) contributes to the production of lysophosphatidic acid (LPA), which is associated with fibrosis development in idiopathic pulmonary fibrosis (IPF). The ATX inhibitor ziritaxestat failed to reduce decline in forced vital capacity (FVC) in patients with IPF in ISABELA 1 and 2 (NCT03711162 and NCT03733444), two identically designed phase III studies. In the current analysis, we evaluated pharmacokinetic and pharmacodynamic data from the pooled ISABELA studies to determine whether the lack of efficacy could be attributed to insufficient exposure and/or target engagement. Nonlinear mixed effect modeling was performed to predict ziritaxestat exposure in individual patients and describe its effect on LPA C18:2 levels. We assessed whether there was a correlation between ziritaxestat and ATX concentration and evaluated the relationship between LPA C18:2 reduction and change from baseline in FVC. Ziritaxestat exposure in patients with IPF was numerically lower in those who received ziritaxestat on top of pirfenidone than in those who received ziritaxestat on top of nintedanib or ziritaxestat alone. In most patients, LPA C18:2 reduction was comparable to that reported in healthy volunteers. ATX concentrations increased over time and correlated weakly with ziritaxestat exposure and LPA C18:2 reduction. No correlation between reduction in LPA C18:2 and change from baseline in FVC was apparent. Based on these evaluations, exposure and target engagement are not thought to have contributed to the lack of efficacy observed. We hypothesize that the lack of efficacy of ziritaxestat in the ISABELA program, despite adequate LPA reduction, could be due to the involvement of an alternative pro-fibrotic pathway., (© 2023 Galapagos NV and The Authors. Clinical Pharmacology & Therapeutics published by Wiley Periodicals LLC on behalf of American Society for Clinical Pharmacology and Therapeutics.)

We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimentally by the nearby temperature sensor and compared by theoretical models solved by both numerical and analytical methods. The average temperature of the channel area of almost 160 °C for dissipated power of 2 W was determined using the drain-source current variation analysis. The electrical and thermal behavioral numerical model under quasi-static conditions have been used to describe the HEMT device. In contrast, the one-dimensional thermal model for analytical evaluation has been proposed as an alternative approach. Surprisingly, the experimental results verified not only the validity of precise numerical simulation but also the simplified analytical model that makes it a reliable tool even for complex electronic devices. [ABSTRACT FROM AUTHOR]

Defects in the emitter region of Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 °C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87 ± 0.05 eV below the conduction band, the capture cross section 3 × 10[sup -14] cm² and the defect density of the order of 10[sup 14] cm[sup -3]. This defect was also found to be localized at the emitter-base interface. [ABSTRACT FROM AUTHOR]

Ziritaxestat is a novel inhibitor of autotaxin, an enzyme responsible for the production of lysophosphatidic acid, the downstream signaling of which mediates responses to tissue injury and has been implicated in the pathogenesis of fibrotic conditions such as idiopathic pulmonary fibrosis and systemic sclerosis. This study (Clinical Trial Registration: NCT03787186) was designed to assess the absorption, distribution, metabolism, and excretion of orally administered 600-mg ziritaxestat labeled with a carbon-14 tracer ( 14 C-ziritaxestat). To understand the absolute bioavailability of ziritaxestat, an intravenous 100-μg microdose, labeled with a microtracer amount of 14 C radiation, was administered in a separate part of the study, following an unlabeled 600-mg therapeutic oral dose of ziritaxestat. Six healthy male subjects completed each study part. The majority of the labeled oral dose was recovered in feces (77%), with a total mass balance of 84%. The absolute bioavailability of ziritaxestat was 54%. Ziritaxestat was the main (76%) circulating drug-related product. There were 7 treatment-emergent adverse events, all of which were considered mild and not considered to be related to the study drug., (© 2021 Galapagos NV. Clinical Pharmacology in Drug Development published by Wiley Periodicals LLC on behalf of American College of Clinical Pharmacology.)

GLPG1972/S201086 is a disintegrin and metalloproteinase with thrombospondin motif-5 (ADAMTS-5) inhibitor in development as an osteoarthritis disease-modifying therapy. We report the safety, tolerability, pharmacokinetics, and pharmacodynamics (turnover of plasma/serum ARGS-aggrecan neoepitope fragments [ARGS]) of GLPG1972 in 3 randomized, double-blind, placebo-controlled phase 1 trials. Study A, a first-in-human trial of single (≤2100 mg [fasted] and 300 mg [fed]) and multiple (≤1050 mg once daily [fed]; 14 days) ascending oral (solution) doses, investigated GLPG1972 in healthy men (N = 41; NCT02612246). Study B investigated multiple ascending oral (tablet) doses of GLPG1972 (≤300 mg once daily [fed]; 4 weeks) in male and female participants with osteoarthritis (N = 30; NCT03311009). Study C investigated single (Japanese: ≤1500 mg; White: 300 mg [fasted]) and multiple (Japanese, ≤1050 mg once daily; White, 300 mg once daily [fed]; 14 days) ascending oral (tablet) doses of GLPG1972 in healthy Japanese and White men (N = 88). The pharmacokinetic profile of GLPG1972 was similar between healthy participants and participants with osteoarthritis, with low to moderate interindividual variability. GLPG1972 was rapidly absorbed (median time to maximum concentration, 4 hours), and eliminated with a mean apparent terminal elimination half-life of ≈10 hours. Steady state was achieved within 2 days of dosing, with minimal accumulation. Steady-state plasma exposure after 300 mg of GLPG1972 showed no or minor differences between populations. Area under the plasma concentration-time curve (56.8-67.6 μg · h/mL) and time to maximum concentration (4 hours) were similar between studies. Urinary excretion of GLPG1972 (24 hours) was low (<11%). Multiple dosing significantly reduced ARGS levels vs baseline at all time points for all doses vs placebo. GLPG1972 was generally well tolerated at all doses., (© 2021 Galapagos NV. Clinical Pharmacology in Drug Development published by Wiley Periodicals LLC on behalf of American College of Clinical Pharmacology.)

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas. [ABSTRACT FROM AUTHOR]

We have investigated the growth of the c-axis oriented aluminum nitride (AlN) thin films on (100) silicon by reactive dc magnetron sputtering at low temperature, considering the effect of the magnet configuration on plasma and film properties. It appears that a magnet modification can significantly modify both the plasma characteristics and the film properties. Electrical and optical characterizations of the plasma phase highlight that depending on the magnet configuration, two very different types of deposition process can be involved in the same deposition chamber. On the one hand, with a balanced magnetron (type 1), the deposition process enhances the production of AlN dimers in the plasma phase and enables to synthesize AlN films with different preferential orientations (100, 002, and even 101). On the other hand, a strongly unbalanced magnetron (type 2) provides a limited production of AlN species in the plasma phase and a strong increase in the ratio of ions to metal atom flux on the growing films. In the latter case, the ion energy provided by the ion flux to the growing film is typically in the 20–30 eV range. Thus, dense (002) oriented films with high crystalline quality are obtained without any substrate heating. [ABSTRACT FROM AUTHOR]

Investigates the effect of electron irradiation on the antimony (Sb) doping levels in silicon molecular-beam epitaxy. Influence of electron irradiation on the Sb adlayer; Growth parameters in the Sb-cell temperature.

Characterizes the defects in epitaxial silicon-doped GaInP. Measurement of the cross section for electron and hole capture; Effect of an electric field on the ionization energy; Method of investigating the persistent photoconductivity effect.

The assembly of basement membranes (BMs) into tissue-specific morphoregulatory structures requires non-core BM components. Work in Drosophila indicates a principal role of collagen-binding matricellular glycoprotein SPARC (Secreted Protein, Acidic, Rich in Cysteine) in larval fat body BM assembly. We report that SPARC and collagen IV (Col(IV)) first colocalize in the trans-Golgi of hemocyte-like cell lines. Mutating the collagen-binding domains of Drosophila SPARC led to the loss of colocalization with Col(IV), a fibrotic-like BM, and 2 nd instar larval lethality, indicating that SPARC binding to Col(IV) is essential for survival. Analysis of this mutant at 2 nd instar reveals increased Col(IV) puncta within adipocytes, reflecting a disruption in the intracellular chaperone-like activity of SPARC. Removal of the disulfide bridge in the C-terminal EF-hand2 of SPARC, which is known to enhance Col(IV) binding, did not lead to larval lethality; however, a less intense fat body phenotype was observed. Additionally, both SPARC mutants exhibited altered fat body BM pore topography. Wing imaginal disc-derived SPARC did not localize within Col(IV)-rich matrices. This raises the possibility that SPARC interaction with Col(IV) requires initial intracellular interaction to colocalize at the BM or that wing-derived SPARC undergoes differential post-translational modifications that impacts its function. Collectively, these data provide evidence that the chaperone-like activity of SPARC on Col(IV) begins just prior to their co-secretion and demonstrate for the first time that the Col(IV) chaperone-like activity of SPARC is necessary for Drosophila development beyond the 2 nd instar., Competing Interests: Declaration of competing interest None., (Copyright © 2020 Elsevier Inc. All rights reserved.)

High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors. [ABSTRACT FROM PUBLISHER]

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose. [ABSTRACT FROM AUTHOR]

We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Lowfrequency noise measurements confirm the presence of field-assisted emission from trap states. The 1f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range. [ABSTRACT FROM AUTHOR]

We report on the investigation of lattice matched InAlN/GaN MOS-HEMT structures prepared by thermal oxidation at 800 °C in oxygen atmosphere for two minutes. The gate leakage current was reduced by two orders of magnitude. Pulse measurements showed lag effects similar to what is observed for devices without oxidation, indicating a high quality native oxide. The MOS-HEMT showed no degradation in the small signal characteristics and yielded a power density of 5 W/mm at 30 V drain voltage at 10 GHz, power added efficiency of 42% and Ft and Fmax of 42 and 61 GHz respectively, illustrating the capability of such MOS-HEMT to operate at high frequencies. [ABSTRACT FROM AUTHOR]

Short-channel punch-through effects are demonstrated in 0.17 μm gate length AlGaN/GaN single heterojunction field-effect transistors. These take the form of a high output conductance and the strong dependence of pinch-off voltage on drain voltage. It is shown by simulation that they can be explained by poor confinement of charge at the AlGaN/GaN interface resulting in current flow within the bulk of the GaN layer. This is caused by there being a concentration of only ∼ 1.5 × 1016 cm-3 deep levels in the insulating GaN buffer layer. It is found that a net acceptor density of around 1017 cm-3 is required to ensure suppression of short-channel effects. [ABSTRACT FROM AUTHOR]

This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges. [ABSTRACT FROM AUTHOR]

In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. The results show that VTH drift and part of the RON degradation induced by the on-state stress are recoverable and likely due to the ionization of C-related acceptors in the buffer. This was confirmed by a preliminary characterization of C-related buffer traps. Conversely, the remaining part of RON degradation (not recovered in 1000 s) was strongly affected by the surface treatment. The current level set during on-state stress affected the amount of non-recoverable degradation, confirming the involvement of hot electrons. Thanks to the monitoring of the parameters' recovery, the proposed method provides important insights into the physical mechanisms governing the parameters' degradation. This extends the capabilities of state-of-the art systems, without the need for custom setup development. [ABSTRACT FROM AUTHOR]

The plasmon excitation in two-dimensional electron gases is a significant way of achieving micro-nanoscale terahertz (THz) devices. Here, we establish a kinetic simulation model to study the THz plasmons amplification in a semiconductor double-quantum-well system with counter-streaming electron drift velocities. By comparing the simulation results with theoretical dispersion relations, we confirm two competing mechanisms of negative damping suitable for THz amplification: Cherenkov-type two-stream instability and a new non-Cherenkov mechanism called kinetic relaxation instability. The former is caused by the interlayer coupling of two slow plasmon modes and only exists when the drift velocities are much greater than the fermi velocities. The latter is a statistical effect caused by the momentum relaxation of electron-impurity scattering and predominates at lower drift velocities. We show that an approximate kinetic dispersion relation can accurately predict the wave growth rates of the two mechanisms. The results also indicate that the saturated plasmonic waves undergo strong nonlinearities such as wave distortion, frequency downshift, wave-packet formation, and spectrum broadening. The nonlinear evolution can be interpreted as the merging of bubble structures in the electron phase-space distribution. The present results not only reveal the potential mechanisms of the plasmonic instabilities in double-layer 2DEGs, but also provide a new guideline for the design of on-chip THz amplifiers. [ABSTRACT FROM AUTHOR]

GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at 1000 ^\circ\C (in vacuum) for 25 h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature may be feasible. [ABSTRACT FROM PUBLISHER]

High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AIInN/AIN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate. The results presented in this letter confirm the high performance that is reachable by A1InN-based technology with an output power of 10.3 W/mm and a power-added efficiency of 51% at 10 GHz with a gate length of 0.25 μm. A good extrinsic transconductance value that is greater than 450 mS/mm and exceeding AIGaN/GaN HIEMT results was also measured on these transistors. To our knowledge, these results are the best power results published on AIInN/GaN HEMTs. These good results were attributed to optimized heterostructure properties associated with low-resistance ohmic contacts and an effective passivation layer minimizing drain current slump in high-frequency operations. [ABSTRACT FROM AUTHOR]

We report the synthesis of 1 μm thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature <250 °C). The microstructure of c-axis oriented AlN films deposited on Si (100) and AlGaN <0001> substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface (20–30 eV) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 °C. [ABSTRACT FROM AUTHOR]

Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm-2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 cm-3 in the surface region following the (Dt)1/2 diffusion law. A second mechanism displaying an abnormally high diffusion coefficient, probably occurring along threading dislocations, was observed. The fast diffusing deuterium traps electrons and passivates residual acceptors, decreasing the electron concentration from 1016 to 1015 cm-3 and increasing the electron mobility from 10 to 320 cm2 V-1 s-1, producing better material for electronic devices. [ABSTRACT FROM AUTHOR]

Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (FT) of 50 GHz are achieved for a 0.25 μm gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2 ⊗ 50 ⊗ 0.25/μm² HEMT with a power gain of 9.1 dB. [ABSTRACT FROM AUTHOR]

A preliminary investigation of the optical properties of complex Cr-based hard coatings and their connection with the compound structure of the coatings is presented. Cr/CrN, Cr/CrN/CrAlN, Cr/CrN/CrTiAlN, and Cr/CrN/CrAlTiN coating structures were deposited through unbalanced magnetron sputtering. Their mechanical properties, especially nanohardness, coefficient of friction, and adhesion, were measured. The structure and composition of the coatings were characterised through SEM, FIB, XPS, and TEM. Their optical properties were investigated by UV-VIS ellipsometry. The optical parameters' phase difference Δ, the amplitude ratio Ψ, the frequency-dependent real (ε1(ω)) and imaginary (ε2(ω)) part of the dielectric function, and the corresponding refractive and extinction indexes n(ω) and k(ω) were measured and modelled via regression analysis implemented using the WVASE© software version 3.686. Satisfactory coincidence was achieved between the measured optical data and the corresponding fitting models. The physical polycrystalline optical constants of the industrial samples were extracted from modelling data with roughness. The analysis of the data showed that ellipsometric characterisation can be used in order to determine the physical properties of Cr-based hard coatings with complex structure and composition, as well as for repeatability control of the deposition process. However, more detailed research is needed to predict the composition based on measured optical properties. [ABSTRACT FROM AUTHOR]

The aim of this study was to solve the problems associated with the sealing and tearing failure of rubber packer cylinders during CO2 downhole injection. Using Comsol Multiphysics 6.0 software, a rubber cylinder model in a supercritical CO2 (SC–CO2) environment was established. The thermal analogy method was used to simulate the CO2 diffusion and rubber cylinder swelling process. We analyzed the deformation and stress of the rubber cylinder that was caused by temperature and pressure, with CO2 as the swelling agent. The results show that in the SC–CO2 environment, under the influence of CO2 diffusion and the consequent swelling, the rubber cylinder body is prone to large deformations, and the maximum shear stress is significantly increased, leading to the shear failure of the rubber cylinder. Reducing the initial seating pressure can alleviate the impact of deformation, whereas reducing the maximum contact pressure can cause the rubber cylinder to lose its seal. We also analyzed the influence of various factors on the maximum contact stress of the rubber cylinder, providing a theoretical basis and technical support for improving the sealing performance of rubber packer cylinders in an SC–CO2 environment. [ABSTRACT FROM AUTHOR]

Integrity of wellbores and near wellbore processes are crucial issues in geological carbon storage (GCS) projects as they both define the confinement and injectivity of CO2. For the proper confinement of CO2, any flow of CO2 along the wellbore trajectory must be prevented using engineered barriers. The effect of cyclic stimuli on wellbore integrity, especially in the context of GCS projects, has been given less attention. In this study, the effect of pressure- and temperature-cycling on two types of wellbore composites (i.e., casing-cement and cement-caprock) have been investigated experimentally in small- and large-scale laboratory setups. The experiments have been carried out by measuring the effective permeability of the composites under pressure and thermal cyclic conditions. Furthermore, the permeability of individual samples (API class G and HMR+ cement and caprock) was measured and compared to the permeability of the composites. The results indicate that the permeability of API class G cement when exposed to CO2 is in the order of 10−20 m2 (10−5 mD) as a result of the chemical reaction between the cement and CO2. In addition, the tightness of the composite cement–rock has been confirmed, while the permeability of the composite casing–cement falls within the acceptable range for tight cement and the CO2 flow was identified to occur through or close to the interface casing–cement. Results from thermal cycling within the range −9 to 14 °C revealed no significant effect on the integrity of the bond casing–cement. In contrast, pressure cycling experiments showed that the effective pressure has a larger influence on the permeability. The potential creation of micro-cracks under pressure variations may require some time for complete closing. In conclusion, the pressure and temperature cycling from this study did not violate the integrity of the casing–cement composite sample as the permeability remained low and within the acceptable range for wellbore cement. [ABSTRACT FROM AUTHOR]