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Electron irradiation effect on antimony doping of silicon <111> grown by molecular-beam epitaxy.

Authors :
Delage, S.
Campidelli, Y.
Arnaud d’Avitaya, F.
Tatarenko, S.
Source :
Journal of Applied Physics. 2/15/1987, Vol. 61 Issue 4, p1404. 6p. 1 Black and White Photograph, 8 Graphs.
Publication Year :
1987

Abstract

Investigates the effect of electron irradiation on the antimony (Sb) doping levels in silicon molecular-beam epitaxy. Influence of electron irradiation on the Sb adlayer; Growth parameters in the Sb-cell temperature.

Details

Language :
English
ISSN :
00218979
Volume :
61
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7628786
Full Text :
https://doi.org/10.1063/1.338119