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Electron irradiation effect on antimony doping of silicon <111> grown by molecular-beam epitaxy.
- Source :
-
Journal of Applied Physics . 2/15/1987, Vol. 61 Issue 4, p1404. 6p. 1 Black and White Photograph, 8 Graphs. - Publication Year :
- 1987
-
Abstract
- Investigates the effect of electron irradiation on the antimony (Sb) doping levels in silicon molecular-beam epitaxy. Influence of electron irradiation on the Sb adlayer; Growth parameters in the Sb-cell temperature.
- Subjects :
- *IRRADIATION
*ANTIMONY
*SEMICONDUCTOR doping
*SILICON
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628786
- Full Text :
- https://doi.org/10.1063/1.338119