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2. Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling

5. Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling.

21. Lifetime prediction methods for p-MOSFET's: a comparative study of standard and charge-pumping lifetime criteria

22. A coupled study by floating-gate and charge-pumping techniques of hot-carrier-induced defects in submicrometer LDD n-MOSFET's

23. Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor

31. General framework about defect creation at the Si/SiO2 interface.

34. General framework about defect creation at the Si/Si[O.sub.2] interface

36. Endurance of One Transistor Floating Body RAM on UTBOX SOI.

37. Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes.

38. Degradation mechanism understanding of NLDEMOS SOI in RF applications

39. The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs.

40. New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation.

41. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide.

50. Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection

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