General framework about defect creation at the Si/SiO2 interface.

This paper presents a theoretical framework about interface state creation rate from Si–H bonds at the Si/SiO₂ interface. It includes three main ways of bond breaking. In the first case, the bond can be broken, thanks to the bond ground state rising with an electrical field. In two other cases, incident carriers will play the main role either if there are very energetic or very numerous but less energetic. This concept allows one to physically model the reliability of metal oxide semiconductor field effect transistors, and particularly negative bias temperature instability permanent part, and channel hot carrier to cold carrier damage. [ABSTRACT FROM AUTHOR]